Auswahl der wissenschaftlichen Literatur zum Thema „Mg-Dopant“
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Zeitschriftenartikel zum Thema "Mg-Dopant"
Yamashita, Yoshiyuki, Jingmin Tang, Yusuke Hashimote und Tomohiro Matsushita. „Atomic Structures and Chemical states of active and inactive dopants in GaN“. ECS Transactions 112, Nr. 2 (29.09.2023): 67–75. http://dx.doi.org/10.1149/11202.0067ecst.
Der volle Inhalt der QuelleSiladie, Alexandra-Madalina, Lynda Amichi, Nicolas Mollard, Isabelle Mouton, Bastien Bonef, Catherine Bougerol, Adeline Grenier et al. „Dopant radial inhomogeneity in Mg-doped GaN nanowires“. Nanotechnology 29, Nr. 25 (25.04.2018): 255706. http://dx.doi.org/10.1088/1361-6528/aabbd6.
Der volle Inhalt der QuelleHuang, Xiaopeng, Feng Liang, Yuanchao Du, Keyu Zhang, Yaochun Yao und Yongnian Dai. „Optimization of the Process Parameters for the Synthesis of LiFe1−x−yMgxTiyPO4/C Cathode Material Using Response Surface Methodology“. Nano 11, Nr. 11 (20.10.2016): 1650122. http://dx.doi.org/10.1142/s1793292016501228.
Der volle Inhalt der QuelleSchmidt, Th, M. Siebert, J. I. Flege, S. Figge, S. Gangopadhyay, A. Pretorius, T. L. Lee et al. „Mg and Si dopant incorporation and segregation in GaN“. physica status solidi (b) 248, Nr. 8 (07.03.2011): 1810–21. http://dx.doi.org/10.1002/pssb.201046531.
Der volle Inhalt der QuelleWinda Rahmalia, Intan Syahbanu, Nurlina, Ayu Widya Sari und Septiani. „Synthesis of Mg-doped TiO2 Using a Hydrothermal Method as Photoanode on Bixin-Sensitized Solar Cell“. Jurnal Riset Kimia 14, Nr. 2 (17.10.2023): 198–208. http://dx.doi.org/10.25077/jrk.v14i2.622.
Der volle Inhalt der QuelleKushwaha, Amanendra K., Manoranjan Misra und Pradeep L. Menezes. „Effect of Magnesium Dopant on the Grain Boundary Stability of Nanocrystalline Aluminum Powders during Cryomilling“. Crystals 13, Nr. 3 (21.03.2023): 541. http://dx.doi.org/10.3390/cryst13030541.
Der volle Inhalt der QuelleAhmed, Duha S., Noor Q. Ali und Ali A. Taha. „The Variation Effect of Mg-doped NPs Prepared by Sol-Gel Method on its Structural Properties and Biological Activities“. Journal of Physics: Conference Series 2114, Nr. 1 (01.12.2021): 012004. http://dx.doi.org/10.1088/1742-6596/2114/1/012004.
Der volle Inhalt der QuelleLi, Jinchai, und Junyong Kang. „Band engineering in Al0.5Ga0.5N∕GaN superlattice by modulating Mg dopant“. Applied Physics Letters 91, Nr. 15 (08.10.2007): 152106. http://dx.doi.org/10.1063/1.2798589.
Der volle Inhalt der QuelleGrillot, P. N., S. A. Stockman, J. W. Huang und Y. L. Chang. „Dopant interactions and Mg segregation in (AlxGa1−x)0.5In0.5P heterostructures“. Physica B: Condensed Matter 308-310 (Dezember 2001): 888–90. http://dx.doi.org/10.1016/s0921-4526(01)00950-4.
Der volle Inhalt der QuelleJain, P., J. Lang, N. Y. Skryabina, D. Fruchart, S. F. Santos, K. Binder, T. Klassen und J. Huot. „MgH2 as dopant for improved activation of commercial Mg ingot“. Journal of Alloys and Compounds 575 (Oktober 2013): 364–69. http://dx.doi.org/10.1016/j.jallcom.2013.05.099.
Der volle Inhalt der QuelleDissertationen zum Thema "Mg-Dopant"
Mballo, Adama. „Détecteurs de neutrons à base de nitrure de bore et ses alliages“. Electronic Thesis or Diss., Université de Lorraine, 2021. http://www.theses.fr/2021LORR0236.
Der volle Inhalt der QuelleNeutron detectors play a crucial role in various applications such as homeland security (airports, borders and ports) to control illegal activities involving nuclear materials, nuclear power plants for neutron radiation safety and monitoring, high energy physics and nuclear science. In addition, recent events such as the Fukushima explosion and the polonium poisoning have stimulated interest in the development of small, portable and low-cost solid-state neutron detectors (SSND). To achieve high efficiency in SSND factors such as neutron absorption and charge collection are critical.The general objective of this work is to develop efficient solid-state thermal neutron detectors based on boron containing III-nitride materials such as boron nitride (BN) and boron-gallium nitride (BGaN). Boron in these materials is very important for the detection of thermal neutrons due to the high neutron capture cross section of the isotope boron-10 (10B) and its low sensitivity to gamma radiation. However, the main challenge with boron containing III-N for neutron detection is the quality of the materials. For instance, growth of thick, high quality single crystalline boron-rich BGaN needed for neutron detectors is difficult due to strain-induced degradations such as phase separation and columnar 3D growth. Therefore, we developed an innovative approach consisting of BGaN/GaN superlattices (SLs) with a nominal boron content of 3% in the BGaN layer. These BGaN/GaN SLs materials were used to fabricate metal-semiconductor-metal (MSM) and p-i-n heterojunction devices, which showed significant neutron-induced signal. Even with this approach, it is found that there are several constraints on the boron content, the quality of the material, and the overall thickness, which are key factors for the realization of high-efficiency neutron detectors.By using binary BN (100% boron) epitaxial layers, higher thermal neutron absorption and performance of neutron detectors are expected. Our group has reported for the first time large area 2D layered h-BN films with high crystalline quality on sapphire substrate by metal organic vapor phase epitaxy (MOVPE). These BN films were used to demonstrate high efficiency deep UV photodetectors. In this work, we have grown up to 2.5µm thick natural and 10B enriched BN samples and used them to fabricate MSM based detectors. The advantages of MSM structures are the ability to achieve self-powered operation, similar to that demonstrated for UV photodetectors, and to benefit from internal gain in order to increase the neutron signal.This work also aims to investigate the control of the electrical conductivity of h-BN by in-situ Mg doping for the future realization of p-n based BN neutron detectors. Since a high boron content is highly desirable for neutron detectors, we have further explored experimentally for the first time a new material: boron-rich BAlN alloys
Buchteile zum Thema "Mg-Dopant"
C.A. Silva, Anielle, Eliete A. Alvin, Francisco R.A. dos Santos, Samanta L.M. de Matos, Jerusa M. de Oliveira, Alessandra S. Silva, Éder V. Guimarães et al. „Doped Semiconductor Nanocrystals: Development and Applications“. In Nanocrystals [Working Title]. IntechOpen, 2021. http://dx.doi.org/10.5772/intechopen.96753.
Der volle Inhalt der QuelleGanas, George, George Karagiannakis, Aitor Eguia-Barrio, Miguel Bengoechea, Iratxe de Meatza und Georgia Kastrinaki. „Aerosol Spray Pyrolysis Synthesis of Doped LiNi0.5Mn1.5O4 Cathode Materials for Next Generation Lithium-Ion Batteries“. In Recent Perspectives in Pyrolysis Research. IntechOpen, 2022. http://dx.doi.org/10.5772/intechopen.100406.
Der volle Inhalt der QuelleKonferenzberichte zum Thema "Mg-Dopant"
Yamoah, Nana Kwame, Timothy Moses und Dhananjay Kumar. „Corrosion Behavior of Tricalcium Phosphate Doped With Different Compositions of Silver“. In ASME 2015 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 2015. http://dx.doi.org/10.1115/imece2015-51748.
Der volle Inhalt der QuelleFouchier, Marc, Christian Monachon und Matthew Davies. „GaN Epitaxial Defects Characterization Using Cathodoluminescence Spectroscopy“. In ISTFA 2023. ASM International, 2023. http://dx.doi.org/10.31399/asm.cp.istfa2023p0463.
Der volle Inhalt der QuelleRitonga, Wahyu Azhar, Timbangen Sembiring, Muhammad Zaini Afdlan, Kerista Sebayang, Susilawati, Hariyati Lubis, Agung Imaduddin, Hilda Ayu Marlina und Cindy Alkindi. „Effect of dopant on superconductor Bi1.6Pb0.4Sr2Ca2-x MxCu3Oy (M = Ce, Na, Mg) phase 2223 by solid method“. In THE 1ST INTERNATIONAL CONFERENCE ON PHYSICS AND APPLIED PHYSICS (THE 1ST ICP&AP) 2019: Fundamental and Innovative Research for Improving Competitive Dignified Nation and Industrial Revolution 4.0. AIP Publishing, 2020. http://dx.doi.org/10.1063/5.0003934.
Der volle Inhalt der QuelleAleksandrovski, A. L., und I. I. Naumova. „Bulk crystals of ferroelectric niobates with periodic domain pattern“. In The European Conference on Lasers and Electro-Optics. Washington, D.C.: Optica Publishing Group, 1994. http://dx.doi.org/10.1364/cleo_europe.1994.cwf49.
Der volle Inhalt der QuelleFen, Tang Xiao, Ari Legowo, Ali Shaitir und Agus Geter Edy Sutjipto. „Study on the Effect of Mg Dopant on the Properties of ZnO Thin Film Prepared by Sol Gel“. In 2019 Advances in Science and Engineering Technology International Conferences (ASET). IEEE, 2019. http://dx.doi.org/10.1109/icaset.2019.8714394.
Der volle Inhalt der QuelleMalek, M. F., M. Alfah, Z. Khusaimi, M. H. Mamat, M. Z. Sahdan, M. Rusop, Mohamad Rusop und Tetsuo Soga. „Effect of Mg Dopant Percentage on the Photoluminescence Property of Nano-Structured ZnO Thin Films Deposited on Si Substrate“. In NANOSCIENCE AND NANOTECHNOLOGY: International Conference on Nanoscience and Nanotechnology—2008. AIP, 2009. http://dx.doi.org/10.1063/1.3160218.
Der volle Inhalt der QuelleChoi, Ju H., Frank G. Shi, Alfred A. Margaryan, Ashot Margaryan und T. G. Nieh. „Dopant and concentration dependence of linear and nonlinear refractive index and dispersion for new (Mg, Ba)F 2 based fluorophosphates glass“. In High-Power Lasers and Applications, herausgegeben von Yehoshua Y. Kalisky. SPIE, 2003. http://dx.doi.org/10.1117/12.479168.
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