Zeitschriftenartikel zum Thema „Metal oxide semiconductor field-effect transistors“
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Kumar, Prateek, Maneesha Gupta, Naveen Kumar, Marlon D. Cruz, Hemant Singh, Ishan und Kartik Anand. „Performance Evaluation of Silicon-Transition Metal Dichalcogenides Heterostructure Based Steep Subthreshold Slope-Field Effect Transistor Using Non-Equilibrium Green’s Function“. Sensor Letters 18, Nr. 6 (01.06.2020): 468–76. http://dx.doi.org/10.1166/sl.2020.4236.
Anderson, Jackson, Yanbo He, Bichoy Bahr und Dana Weinstein. „Integrated acoustic resonators in commercial fin field-effect transistor technology“. Nature Electronics 5, Nr. 9 (23.09.2022): 611–19. http://dx.doi.org/10.1038/s41928-022-00827-6.
Weng, Wu-Te, Yao-Jen Lee, Horng-Chih Lin und Tiao-Yuan Huang. „Plasma-Induced Damage on the Reliability of Hf-Based High-k/Dual Metal-Gates Complementary Metal Oxide Semiconductor Technology“. International Journal of Plasma Science and Engineering 2009 (14.12.2009): 1–10. http://dx.doi.org/10.1155/2009/308949.
John Chelliah, Cyril R. A., und Rajesh Swaminathan. „Current trends in changing the channel in MOSFETs by III–V semiconducting nanostructures“. Nanotechnology Reviews 6, Nr. 6 (27.11.2017): 613–23. http://dx.doi.org/10.1515/ntrev-2017-0155.
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Diao Wenhao, 刁文豪, 江伟华 Jiang Weihua und 王新新 Wang Xinxin. „Marx generator using metal-oxide-semiconductor field-effect transistors“. High Power Laser and Particle Beams 22, Nr. 3 (2010): 565–68. http://dx.doi.org/10.3788/hplpb20102203.0565.
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Yang, Ji-Woon, Chang Seo Park, Casey E. Smith, Hemant Adhikari, Jeff Huang, Dawei Heh, Prashant Majhi und Raj Jammy. „Mitigation of Complementary Metal–Oxide–Semiconductor Variability with Metal Gate Metal–Oxide–Semiconductor Field-Effect Transistors“. Japanese Journal of Applied Physics 48, Nr. 4 (20.04.2009): 04C056. http://dx.doi.org/10.1143/jjap.48.04c056.
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Yang, Ji-Woon, Chang Seo Park, Casey E. Smith, Hemant Adhikari, Jeff Huang, Dawei Heh, Prashant Majhi und Raj Jammy. „Erratum: “Mitigation of Complementary Metal–Oxide–Semiconductor Variability with Metal Gate Metal–Oxide–Semiconductor Field-Effect Transistors”“. Japanese Journal of Applied Physics 50, Nr. 11R (01.11.2011): 119201. http://dx.doi.org/10.7567/jjap.50.119201.
Yang, Ji-Woon, Chang Seo Park, Casey E. Smith, Hemant Adhikari, Jeff Huang, Dawei Heh, Prashant Majhi und Raj Jammy. „Erratum: “Mitigation of Complementary Metal–Oxide–Semiconductor Variability with Metal Gate Metal–Oxide–Semiconductor Field-Effect Transistors”“. Japanese Journal of Applied Physics 50 (31.10.2011): 119201. http://dx.doi.org/10.1143/jjap.50.119201.
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Bennett, Brian R., Mario G. Ancona und J. Brad Boos. „Compound Semiconductors for Low-Power p-Channel Field-Effect Transistors“. MRS Bulletin 34, Nr. 7 (Juli 2009): 530–36. http://dx.doi.org/10.1557/mrs2009.141.
Agha, Firas, Yasir Naif und Mohammed Shakib. „Review of Nanosheet Transistors Technology“. Tikrit Journal of Engineering Sciences 28, Nr. 1 (20.05.2021): 40–48. http://dx.doi.org/10.25130/tjes.28.1.05.
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Yang, Jianan, John P. Denton und Gerold W. Neudeck. „Edge transistor elimination in oxide trench isolated N-channel metal–oxide–semiconductor field effect transistors“. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 19, Nr. 2 (2001): 327. http://dx.doi.org/10.1116/1.1358854.
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Palma, Fabrizio. „Self-Mixing Model of Terahertz Rectification in a Metal Oxide Semiconductor Capacitance“. Electronics 9, Nr. 3 (14.03.2020): 479. http://dx.doi.org/10.3390/electronics9030479.
Kaneko, Kentaro, Yoshito Ito, Takayuki Uchida und Shizuo Fujita. „Growth and metal–oxide–semiconductor field-effect transistors of corundum-structured alpha indium oxide semiconductors“. Applied Physics Express 8, Nr. 9 (01.09.2015): 095503. http://dx.doi.org/10.7567/apex.8.095503.
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Toumazou, Christofer, Tan Sri Lim Kok Thay und Pantelis Georgiou. „A new era of semiconductor genetics using ion-sensitive field-effect transistors: the gene-sensitive integrated cell“. Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 372, Nr. 2012 (28.03.2014): 20130112. http://dx.doi.org/10.1098/rsta.2013.0112.
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Gaubert, Philippe, Akinobu Teramoto, Shigetoshi Sugawa und Tadahiro Ohmi. „Hole Mobility in Accumulation Mode Metal–Oxide–Semiconductor Field-Effect Transistors“. Japanese Journal of Applied Physics 51, Nr. 4S (01.04.2012): 04DC07. http://dx.doi.org/10.7567/jjap.51.04dc07.
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Kim, Sang Hyeon, Dae-Myeong Geum, Min-Su Park und Won Jun Choi. „In0.53Ga0.47As-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors Utilizing Y2O3 Buried Oxide“. IEEE Electron Device Letters 36, Nr. 5 (Mai 2015): 451–53. http://dx.doi.org/10.1109/led.2015.2417872.