Auswahl der wissenschaftlichen Literatur zum Thema „Metal oxide semiconductor field-effect transistors“
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Zeitschriftenartikel zum Thema "Metal oxide semiconductor field-effect transistors":
Kumar, Prateek, Maneesha Gupta, Naveen Kumar, Marlon D. Cruz, Hemant Singh, Ishan und Kartik Anand. „Performance Evaluation of Silicon-Transition Metal Dichalcogenides Heterostructure Based Steep Subthreshold Slope-Field Effect Transistor Using Non-Equilibrium Green’s Function“. Sensor Letters 18, Nr. 6 (01.06.2020): 468–76. http://dx.doi.org/10.1166/sl.2020.4236.
Anderson, Jackson, Yanbo He, Bichoy Bahr und Dana Weinstein. „Integrated acoustic resonators in commercial fin field-effect transistor technology“. Nature Electronics 5, Nr. 9 (23.09.2022): 611–19. http://dx.doi.org/10.1038/s41928-022-00827-6.
Weng, Wu-Te, Yao-Jen Lee, Horng-Chih Lin und Tiao-Yuan Huang. „Plasma-Induced Damage on the Reliability of Hf-Based High-k/Dual Metal-Gates Complementary Metal Oxide Semiconductor Technology“. International Journal of Plasma Science and Engineering 2009 (14.12.2009): 1–10. http://dx.doi.org/10.1155/2009/308949.
John Chelliah, Cyril R. A., und Rajesh Swaminathan. „Current trends in changing the channel in MOSFETs by III–V semiconducting nanostructures“. Nanotechnology Reviews 6, Nr. 6 (27.11.2017): 613–23. http://dx.doi.org/10.1515/ntrev-2017-0155.
Ouyang, Zhuping, Wanxia Wang, Mingjiang Dai, Baicheng Zhang, Jianhong Gong, Mingchen Li, Lihao Qin und Hui Sun. „Research Progress of p-Type Oxide Thin-Film Transistors“. Materials 15, Nr. 14 (08.07.2022): 4781. http://dx.doi.org/10.3390/ma15144781.
Choi, Woo Young, Jong Duk Lee und Byung-Gook Park. „Integration Process of Impact-Ionization Metal–Oxide–Semiconductor Devices with Tunneling Field-Effect-Transistors and Metal–Oxide–Semiconductor Field-Effect Transistors“. Japanese Journal of Applied Physics 46, Nr. 1 (10.01.2007): 122–24. http://dx.doi.org/10.1143/jjap.46.122.
Bendada, E., K. Raïs, P. Mialhe und J. P. Charles. „Surface Recombination Via Interface Defects in Field Effect Transistors“. Active and Passive Electronic Components 21, Nr. 1 (1998): 61–71. http://dx.doi.org/10.1155/1998/91648.
Choi, Woo Young. „Comparative Study of Tunneling Field-Effect Transistors and Metal–Oxide–Semiconductor Field-Effect Transistors“. Japanese Journal of Applied Physics 49, Nr. 4 (20.04.2010): 04DJ12. http://dx.doi.org/10.1143/jjap.49.04dj12.
Diao Wenhao, 刁文豪, 江伟华 Jiang Weihua und 王新新 Wang Xinxin. „Marx generator using metal-oxide-semiconductor field-effect transistors“. High Power Laser and Particle Beams 22, Nr. 3 (2010): 565–68. http://dx.doi.org/10.3788/hplpb20102203.0565.
Irokawa, Y., Y. Nakano, M. Ishiko, T. Kachi, J. Kim, F. Ren, B. P. Gila et al. „GaN enhancement mode metal-oxide semiconductor field effect transistors“. physica status solidi (c) 2, Nr. 7 (Mai 2005): 2668–71. http://dx.doi.org/10.1002/pssc.200461280.
Dissertationen zum Thema "Metal oxide semiconductor field-effect transistors":
Vega, Reinaldo A. „Schottky field effect transistors and Schottky CMOS circuitry /“. Online version of thesis, 2006. http://hdl.handle.net/1850/5179.
Shi, Xuejie. „Compact modeling of double-gate metal-oxide-semiconductor field-effect transistor /“. View abstract or full-text, 2006. http://library.ust.hk/cgi/db/thesis.pl?ELEC%202006%20SHI.
Zhang, Zhikuan. „Source/drain engineering for extremely scaled MOSFETs /“. View abstract or full-text, 2005. http://library.ust.hk/cgi/db/thesis.pl?ELEC%202005%20ZHANG.
Fleischer, Stephen. „A study of gate-oxide leakage in MOS devices“. Thesis, [Hong Kong : University of Hong Kong], 1993. http://sunzi.lib.hku.hk/hkuto/record.jsp?B1364600X.
Höhr, Timm. „Quantum-mechanical modeling of transport parameters for MOS devices /“. Konstanz : Hartnung-Gorre, 2006. http://www.loc.gov/catdir/toc/fy0707/2007358987.html.
Summary in German and English, text in English. Includes bibliographical references (p. 123-132).
Turner, Gary Chandler. „Zinc Oxide MESFET Transistors“. Thesis, University of Canterbury. Electrical and Computer Engineering, 2009. http://hdl.handle.net/10092/3439.
Randell, Heather Eve. „Applications of stress from boron doping and other challenges in silicon technology“. [Gainesville, Fla.] : University of Florida, 2005. http://purl.fcla.edu/fcla/etd/UFE0010292.
Wu, Xu Sheng. „Three dimensional multi-gates devices and circuits fabrication, characterization, and modeling /“. View abstract or full-text, 2005. http://library.ust.hk/cgi/db/thesis.pl?ELEC%202005%20WUX.
Modzelewski, Kenneth Paul. „DC parameter extraction technique for independent double gate MOSFETs a thesis presented to the faculty of the Graduate School, Tennessee Technological University /“. Click to access online, 2009. http://proquest.umi.com/pqdweb?index=11&did=1759989211&SrchMode=1&sid=1&Fmt=6&VInst=PROD&VType=PQD&RQT=309&VName=PQD&TS=1250600320&clientId=28564.
Trivedi, Vishal P. „Physics and design of nonclassical nanoscale CMOS devices with ultra-thin bodies“. [Gainesville, Fla.] : University of Florida, 2005. http://purl.fcla.edu/fcla/etd/UFE0009860.
Bücher zum Thema "Metal oxide semiconductor field-effect transistors":
Pierret, Robert F. Field effect devices. 2. Aufl. Reading, Mass: Addison-Wesley Pub. Co., 1990.
Soclof, Sidney. Metal-oxide-semiconductor field-effect transistors (MOSFETS): Principles and applications. Boston: Artech House, 1996.
Baliga, B. Jayant. Advanced power MOSFET concepts. New York: Springer, 2010.
Croon, Jeroen A. Matching properties of deep sub-micron MOS transistors. New York: Springer, 2005.
Shur, Michael. Physics of semiconductor devices. Englewood Cliffs, N.J: Prentice Hall, 1990.
Korec, Jacek. Low voltage power MOSFETs: Design, performance and applications. New York: Springer, 2011.
Paul, Reinhold. MOS-Feldeffekttransistoren. Berlin: Springer-Verlag, 1994.
T, Andre Noah, und Simon Lucas M, Hrsg. MOSFETS: Properties, preparations to performance. New York: Nova Science Publishers, 2008.
Shur, Michael. Physics of semiconductor devices: Software and manual. London: Prentice-Hall, 1990.
Oktyabrsky, Serge, und Peide D. Ye. Fundamentals of III-V semiconductor MOSFETs. New York: Springer, 2010.
Buchteile zum Thema "Metal oxide semiconductor field-effect transistors":
Li, Sheng S. „Metal—Oxide—Semiconductor Field-Effect Transistors“. In Semiconductor Physical Electronics, 423–54. Boston, MA: Springer US, 1993. http://dx.doi.org/10.1007/978-1-4613-0489-0_14.
Yuan, J. S., und J. J. Liou. „Metal—Oxide Semiconductor Field-Effect Transistors“. In Semiconductor Device Physics and Simulation, 127–61. Boston, MA: Springer US, 1998. http://dx.doi.org/10.1007/978-1-4899-1904-5_5.
Li, Yiming, Jam-Wem Lee und Hong-Mu Chou. „Comparison of Nanoscale Metal-Oxide-Semiconductor Field Effect Transistors“. In Simulation of Semiconductor Processes and Devices 2004, 307–10. Vienna: Springer Vienna, 2004. http://dx.doi.org/10.1007/978-3-7091-0624-2_72.
Evstigneev, Mykhaylo. „Metal–Oxide–Semiconductor Field Effect Transistor (MOSFET)“. In Introduction to Semiconductor Physics and Devices, 233–55. Cham: Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-031-08458-4_10.
Tsang, Paul J. „Structures and Fabrication of Metal-Oxide-Silicon Field-Effect Transistor“. In Handbook of Advanced Semiconductor Technology and Computer Systems, 92–147. Dordrecht: Springer Netherlands, 1988. http://dx.doi.org/10.1007/978-94-011-7056-7_4.
Saha, Jhuma, Amrita Kumari, Shankaranand Jha und Subindu Kumar. „On the Voltage Transfer Characteristics (VTC) of some Nanoscale Metal-Oxide-Semiconductor Field-Effect-Transistors (MOSFETs)“. In Physics of Semiconductor Devices, 211–14. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-03002-9_52.
Tilak, Vinayak. „Inversion Layer Electron Transport in 4H-SiC Metal-Oxide-Semiconductor Field-Effect Transistors“. In Silicon Carbide, 267–90. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2011. http://dx.doi.org/10.1002/9783527629077.ch11.
Bharti, Deepshikha, und Aminul Islam. „Operational Characteristics of Vertically Diffused Metal Oxide Semiconductor Field Effect Transistor“. In Nanoscale Devices, 91–108. Boca Raton : Taylor & Francis, a CRC title, part of the Taylor & Francis imprint, a member of the Taylor & Francis Group, the academic division of T&F Informa, plc, 2019.: CRC Press, 2018. http://dx.doi.org/10.1201/9781315163116-5.
Kumar, Prateek, Maneesha Gupta, Kunwar Singh und Ashok Kumar Gupta. „Study of Transition Metal Dichalcogenides in Junctionless Transistors and Effect of Variation in Dielectric Oxide“. In Sub-Micron Semiconductor Devices, 39–48. Boca Raton: CRC Press, 2022. http://dx.doi.org/10.1201/9781003126393-3.
Bharti, Deepshikha, und Aminul Islam. „U-Shaped Gate Trench Metal Oxide Semiconductor Field Effect Transistor: Structures and Characteristics“. In Nanoscale Devices, 69–90. Boca Raton : Taylor & Francis, a CRC title, part of the Taylor & Francis imprint, a member of the Taylor & Francis Group, the academic division of T&F Informa, plc, 2019.: CRC Press, 2018. http://dx.doi.org/10.1201/9781315163116-4.
Konferenzberichte zum Thema "Metal oxide semiconductor field-effect transistors":
Lee, Ching-Ting, und Ya-Lan Chou. „GaN-based metal-oxide-semiconductor field-effect transistors“. In 2014 IEEE 12th International Conference on Solid -State and Integrated Circuit Technology (ICSICT). IEEE, 2014. http://dx.doi.org/10.1109/icsict.2014.7021209.
Yu, Jeng-Wei, Yuh-Renn Wu, Jian-Jang Huang und Lung-Han Peng. „75GHz Ga2O3/GaN Single Nanowire Metal- Oxide-Semiconductor Field-Effect Transistors“. In 2010 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS). IEEE, 2010. http://dx.doi.org/10.1109/csics.2010.5619673.
Aihara, Takuma, Ayumi Takeda, Masashi Fukuhara, Yuya Ishii und Mitsuo Fukuda. „Metal-oxide-semiconductor field-effect transistors operated by surface plasmon polaritons“. In SPIE Micro+Nano Materials, Devices, and Applications, herausgegeben von James Friend und H. Hoe Tan. SPIE, 2013. http://dx.doi.org/10.1117/12.2033618.
Okumura, H., T. Takahashi und M. Shimizu. „Demonstration of m-plane GaN metal-oxide-semiconductor field-effect transistors“. In 2019 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2019. http://dx.doi.org/10.7567/ssdm.2019.ps-4-25.
Sakai, Hiroki, Takuma Aihara, Masashi Fukuhara, Masashi Ota, Yu Kimura, Yuya Ishii und Mitsuo Fukuda. „Integration of plasmonic device with metal-oxide-semiconductor field-effect transistors“. In 2014 International Conference on Optical MEMS and Nanophotonics (OMN). IEEE, 2014. http://dx.doi.org/10.1109/omn.2014.6924581.
Koide, Yasuo. „High-k Oxides on Hydrogenated-Diamond for Metal-Oxide-Semiconductor Field-Effect Transistors [Invited]“. In 2019 IEEE 32nd International Conference on Microelectronic Test Structures (ICMTS). IEEE, 2019. http://dx.doi.org/10.1109/icmts.2019.8730974.
Girardi, Stefano, Marta Maschietto, Ralf Zeitler, Mufti Mahmud und Stefano Vassanelli. „High resolution cortical imaging using electrolyte-(metal)-oxide-semiconductor field effect transistors“. In 5th International IEEE/EMBS Conference on Neural Engineering (NER 2011). IEEE, 2011. http://dx.doi.org/10.1109/ner.2011.5910539.
Aihara, Takuma, Ayumi Takeda, Masashi Fukuhara, Yuya Ishii und Mitsuo Fukuda. „Plasmonic signal amplification by monolithically integrated metal-oxide-semiconductor field-effect transistors“. In 2013 IEEE Photonics Conference (IPC). IEEE, 2013. http://dx.doi.org/10.1109/ipcon.2013.6656689.
Vinod Adivarahan, Mikhail Gaevski, Naveen Tipirneni, Bin Zhang, Yanqing Deng, Zijiang Yang und Asif Khan. „0.18 μm double-recessed III-nitride metal-oxide double heterostructure field-effect transistors“. In 2007 International Semiconductor Device Research Symposium. IEEE, 2007. http://dx.doi.org/10.1109/isdrs.2007.4422460.
Sonnet, A. M., R. V. Galatage, M. N. Jivani, M. Milojevic, R. A. Chapman, C. L. Hinkle, R. M. Wallace und E. M. Vogel. „Interfacial engineering of InGaAs/high-k metal-oxide-semiconductor field effect transistors (MOSFETs)“. In 2009 IEEE International Integrated Reliability Workshop (IRW). IEEE, 2009. http://dx.doi.org/10.1109/irws.2009.5383036.