Auswahl der wissenschaftlichen Literatur zum Thema „Metal-Insulator Transition devices“
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Zeitschriftenartikel zum Thema "Metal-Insulator Transition devices"
Lee, D., B. Chung, Y. Shi, G. Y. Kim, N. Campbell, F. Xue, K. Song et al. „Isostructural metal-insulator transition in VO2“. Science 362, Nr. 6418 (29.11.2018): 1037–40. http://dx.doi.org/10.1126/science.aam9189.
Der volle Inhalt der QuelleLi, Dasheng, Jonathan M. Goodwill, James A. Bain und Marek Skowronski. „Scaling behavior of oxide-based electrothermal threshold switching devices“. Nanoscale 9, Nr. 37 (2017): 14139–48. http://dx.doi.org/10.1039/c7nr03865h.
Der volle Inhalt der QuelleWang, Qi, Kai Liang Zhang, Fang Wang, Kai Song und Zhi Xiang Hu. „Investigation on the Electric-Field-Induced Metal-Insulator Transition in VoX-Based Devices“. Applied Mechanics and Materials 130-134 (Oktober 2011): 1–4. http://dx.doi.org/10.4028/www.scientific.net/amm.130-134.1.
Der volle Inhalt der QuellePolak, Paweł, Jan Jamroz und Tomasz K. Pietrzak. „Observation of Metal–Insulator Transition (MIT) in Vanadium Oxides V2O3 and VO2 in XRD, DSC and DC Experiments“. Crystals 13, Nr. 9 (23.08.2023): 1299. http://dx.doi.org/10.3390/cryst13091299.
Der volle Inhalt der QuelleCheng, Shaobo, Min-Han Lee, Richard Tran, Yin Shi, Xing Li, Henry Navarro, Coline Adda et al. „Inherent stochasticity during insulator–metal transition in VO2“. Proceedings of the National Academy of Sciences 118, Nr. 37 (07.09.2021): e2105895118. http://dx.doi.org/10.1073/pnas.2105895118.
Der volle Inhalt der QuelleHong, Woong-Ki, SeungNam Cha, Jung Inn Sohn und Jong Min Kim. „Metal-Insulator Phase Transition in Quasi-One-Dimensional VO2Structures“. Journal of Nanomaterials 2015 (2015): 1–15. http://dx.doi.org/10.1155/2015/538954.
Der volle Inhalt der QuelleWei, Na, Xiang Ding, Shifan Gao, Wenhao Wu und Yi Zhao. „HfOx/Ge RRAM with High ON/OFF Ratio and Good Endurance“. Electronics 11, Nr. 22 (20.11.2022): 3820. http://dx.doi.org/10.3390/electronics11223820.
Der volle Inhalt der QuelleHuang, Tiantian, Rui Zhang, Lepeng Zhang, Peiran Xu, Yunkai Shao, Wanli Yang, Zhimin Chen, Xin Chen und Ning Dai. „Energy-adaptive resistive switching with controllable thresholds in insulator–metal transition“. RSC Advances 12, Nr. 55 (2022): 35579–86. http://dx.doi.org/10.1039/d2ra06866d.
Der volle Inhalt der QuelleWeidemann, Sebastian, Mark Kremer, Stefano Longhi und Alexander Szameit. „Topological triple phase transition in non-Hermitian Floquet quasicrystals“. Nature 601, Nr. 7893 (19.01.2022): 354–59. http://dx.doi.org/10.1038/s41586-021-04253-0.
Der volle Inhalt der QuelleHeo, Jinseong, Heejeong Jeong, Yeonchoo Cho, Jaeho Lee, Kiyoung Lee, Seunggeol Nam, Eun-Kyu Lee et al. „Reconfigurable van der Waals Heterostructured Devices with Metal–Insulator Transition“. Nano Letters 16, Nr. 11 (05.10.2016): 6746–54. http://dx.doi.org/10.1021/acs.nanolett.6b02199.
Der volle Inhalt der QuelleDissertationen zum Thema "Metal-Insulator Transition devices"
Collins-McIntyre, Liam James. „Transition-metal doped Bi2Se3 and Bi2Te3 topological insulator thin films“. Thesis, University of Oxford, 2015. http://ora.ox.ac.uk/objects/uuid:480ea55a-5cac-4bab-a992-a3201f10f4c5.
Der volle Inhalt der QuelleClarke, Warrick Robin Physics Faculty of Science UNSW. „Quantum interaction phenomena in p-GaAs microelectronic devices“. Awarded by:University of New South Wales. School of Physics, 2006. http://handle.unsw.edu.au/1959.4/32259.
Der volle Inhalt der QuelleDelacour, Corentin. „Architecture Design for Analog Oscillatory Neural Networks“. Electronic Thesis or Diss., Université de Montpellier (2022-....), 2023. http://www.theses.fr/2023UMONS069.
Der volle Inhalt der QuelleDigitalization of society creates important quantities of data that have been increasing at an exponential rate during the past few years. Despite the tremendous technological progress, digital computers have trouble meeting the demand, especially for challenging tasks involving artificial intelligence or optimization problems. The fundamental reason comes from the architecture of digital computers which separates the processor and memory and slows down computations due to undesired data transfers, the so-called von Neumann bottleneck. To avoid unnecessary data movement, various computing paradigms have been proposed that merge processor and memory such as neuromorphic architectures that take inspiration from the brain and physically implement artificial neural networks. Furthermore, rethinking digital operations and using analog physical laws to compute has the potential to accelerate some tasks at a low energy cost.This dissertation aims to explore an energy-efficient physical computing approach based on analog oscillatory neural networks (ONN). In particular, this dissertation unveils (1) the performances of ONN based on vanadium dioxide oscillating neurons with resistive synapses, (2) a novel mixed-signal and scalable ONN architecture that computes in the analog domain and propagates the information digitally, and (3) how ONNs can tackle combinatorial optimization problems whose complexity scale exponentially with the problem size. The dissertation concludes with discussions of some promising future research directions
Le, Bourdais David. „Microcapteurs de pression à base de manganites épitaxiées“. Thesis, Paris 11, 2015. http://www.theses.fr/2015PA112021/document.
Der volle Inhalt der QuelleFunctional perovskite oxides are of great interest for fundamental and applied research thanks to the numerous physical properties and inherent mechanisms they display. With the maturation of thin film deposition techniques, research teams are able to reproduce oxide films and nanostructures of great crystalline quality with some of the most remarkable properties found in physics, a state leading now to upper-level thoughts like their ability to fulfill industrial needs. This thesis work is an answer to some of the problematics that arise when considering the oxide transition from the research to the industrial world, by focusing on their integration for micromechanical devices (MEMS) such as sensors. In order to ease the access to MEMS manufacturing, it is of importance to allow the deposition of thin oxide films on semiconductor substrates. A first study show that these access bridges can be crossed when using appropriate buffer layers such as SrTiO3 deposited on Silicon or gallium arsenide – produced in close collaboration with INL by Molecular Beam Epitaxy - and yttria-stabilized zirconia directly grown on silicon by pulsed laser deposition, which adapts the surface properties of the substrate to perovksite-based materials. Formation of thin epitaxial and monocristalline films of functional oxides is thus allowed on such buffer layers. As an example, characterization of two mixed-valence manganites La0.80Ba0.20MnO3 and La0.67Sr0.33MnO3 demonstrates that both materials are of excellent crystalline quality on these semiconducting substrates and that their physical characteristics match the one found on classical oxide substrates like SrTiO3. Stress evolution in thin films, which has a major effect in epitaxial materials, is then addressed to quantify its impact on oxide microstructure viability. This work gives an identification of the most significant factors favoring stress generation in the case of the films we produced. Then, based on the deformation measurement of free-standing cantilevers made of manganites on pseudo-substrates, and with the support of appropriate analytical models, a new state of equilibrium is established, giving new information about the evolution of static stress from deposition to MEMS device manufacturing. Solutions to manage their reproducibility is then studied. From another perspective, free-standing microstructures made of monocristaline manganites were used to display the effect of dynamical strain on their electrical resistivity (piezoresistivity) and their inherent structures.Finally, a specific example of the capabilities of reproducible free-standing microbridges made of manganites is presented through the conception of a pressure gauge based on Pirani effect. Indeed, it is shown that the abrupt resistivity change this material exhibits near their metal-to-insulating transition creates high temperature coefficients in standard application environments that can be taken as an advantage to improve the sensibility and power consumption of such gauges whose development had significantly slowed down over the past years. A set of improvements on their sensitivity range and their signal acquisition is also presented. Combined to a specific and innovative package, it is also demonstrated that Pirani gauge capabilities can be enhanced and that the complete devices fulfill embedded application requirements
Santos, Ana Filipa Alves Rodrigues dos. „Investigation of VO2 Metal-to-Insulator Transition for application in memory devices“. Master's thesis, 2020. http://hdl.handle.net/10362/129483.
Der volle Inhalt der QuelleOs óxidos de vanádio têm sido bastante estudados devido às suas múltiplas formas e fases. Em particular, o VO2 apresenta uma transição metal-isolante (MIT) reversível e ultrarrápida que ocorre a ~68ºC que altera o material de estrutura monoclínica para tetragonal rutile. Um estímulo externo (térmico, químico ou elétrico) pode provocar esta transição, alterando-a de um estado de alta resistência para baixa resistência, significando que pode ser usado como interruptor elétrico. Neste trabalho, foram estudadas as condições ótimas para produzir filmes finos de VO2 (~200 nm de espessura). Foram depositados por e-beam evaporation e rf magnetron sputtering (a diferentes pressões de O2), seguidos de um tratamento RTA a diferentes temperaturas. A composição estrutural dos filmes finos de VO2 foi caracterizada por XRD, XPS e AFM. Os filmes depositados por e-beam não são reproduzíveis devido a contaminações do cadinho de tungsténio e foi difícil evaporar os “pellets” de VO2. Os filmes eram amorfos depois da deposição e o recozimento realizado mostrou que a fase monoclínica de VO2 foi atingida com sucesso a 500ºC. O substrato utilizado foi Vidro/ITO. À medida que a temperatura aumentava e a pressão de O2 diminuía, a cristalização e rugosidade dos filmes aumentava. As condições ótimas por sputtering foi obtida para 3x10-5 mbar de pressão de O2 e temperatura de 450ºC num ambiente de N2 com uma pressão base de 250 mbar. Dispositivos MIM foram fabricados por sputtering onde Molibdénio (Mo) foi o metal depositado por cima do VO2, usando máscaras com contactos circulares e usando filmes de ITO como contacto de baixo. A caracterização in-situ com aquecimento foi realizada no XRD e XPS para se analisar a transição in termos de diferenças de fase assim como as propriedades químicas e elétricas. A caracterização elétrica preliminar foi realizada para explorar a MIT em filmes finos de VO2 otimizados.
Chang, Jiwon active 2013. „Ab-initio electronic structure and quantum transport calculations on quasi-two-dimensional materials for beyond Si-CMOS devices“. 2013. http://hdl.handle.net/2152/21742.
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(7025126), Ahmedullah Aziz. „Device-Circuit Co-Design Employing Phase Transition Materials for Low Power Electronics“. Thesis, 2019.
Den vollen Inhalt der Quelle findenPhase transition materials (PTM) have garnered immense interest in concurrent post-CMOS electronics, due to their unique properties such as - electrically driven abrupt resistance switching, hysteresis, and high selectivity. The phase transitions can be attributed to diverse material-specific phenomena, including- correlated electrons, filamentary ion diffusion, and dimerization. In this research, we explore the application space for these materials through extensive device-circuit co-design and propose new ideas harnessing their unique electrical properties. The abrupt transitions and high selectivity of PTMs enable steep (< 60 mV/decade) switching characteristics in Hyper-FET, a promising post-CMOS transistor. We explore device-circuit co-design methodology for Hyper-FET and identify the criterion for material down-selection. We evaluate the achievable voltage swing, energy-delay trade-off, and noise response for this novel device. In addition to the application in low power logic device, PTMs can actively facilitate non-volatile memory design. We propose a PTM augmented Spin Transfer Torque (STT) MRAM that utilizes selective phase transitions to boost the sense margin and stability of stored data, simultaneously. We show that such selective transitions can also be used to improve other MRAM designs with separate read/write paths, avoiding the possibility of read-write conflicts. Further, we analyze the application of PTMs as selectors in cross-point memories. We establish a general simulation framework for cross-point memory array with PTM based selector. We explore the biasing constraints, develop detailed design methodology, and deduce figures of merit for PTM selectors. We also develop a computationally efficient compact model to estimate the leakage through the sneak paths in a cross-point array. Subsequently, we present a new sense amplifier design utilizing PTM, which offers built-in tunable reference with low power and area demand. Finally, we show that the hysteretic characteristics of unipolar PTMs can be utilized to achieve highly efficient rectification. We validate the idea by demonstrating significant design improvements in a Cockcroft-Walton Multiplier, implemented with TS based rectifiers. We emphasize the need to explore other PTMs with high endurance, thermal stability, and faster switching to enable many more innovative applications in the future.
Buchteile zum Thema "Metal-Insulator Transition devices"
Verma, Divya, und Viswanath Balakrishnan. „Strain Engineering of Metal Insulator Transition in VO2“. In Strain Engineering in Functional Materials and Devices, 1–24. AIP Publishing, 2023. http://dx.doi.org/10.1063/9780735425590_004.
Der volle Inhalt der QuelleDhara, Arup. „SYNTHESIS AND ELECTRICAL TRANSPORT PROPERTIES OF METAL OXIDE NANOMATERIALS“. In Futuristic Trends in Chemical Material Sciences & Nano Technology Volume 3 Book 8, 164–68. Iterative International Publishers, Selfypage Developers Pvt Ltd, 2024. http://dx.doi.org/10.58532/v3becs8p4ch3.
Der volle Inhalt der QuelleWu, Xiaohan, Ruijing Ge, Deji Akinwande und Jack C. Lee. „Memristors Based on 2D Monolayer Materials“. In Memristor - An Emerging Device for Post-Moore’s Computing and Applications. IntechOpen, 2021. http://dx.doi.org/10.5772/intechopen.98331.
Der volle Inhalt der QuelleHangleiter, Andreas. „Optoelectronic devices based on low-dimensional nitride heterostructures“. In Low-Dimensional Nitride Semiconductors, 311–40. Oxford University PressOxford, 2002. http://dx.doi.org/10.1093/oso/9780198509745.003.0013.
Der volle Inhalt der QuelleKonferenzberichte zum Thema "Metal-Insulator Transition devices"
Darwish, Mahmoud, und László Pohl. „SPICE Modeling of Insulator-Metal Transition Devices with Hysteresis“. In 2023 29th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC). IEEE, 2023. http://dx.doi.org/10.1109/therminic60375.2023.10325868.
Der volle Inhalt der QuelleChandra, Sayan, Daniel Franklin, Jared Cozart, Alireza Safaei und Debashis Chanda. „Metal-insulator transition-induced adaptive multispectral infrared camouflage (Conference Presentation)“. In Oxide-based Materials and Devices X, herausgegeben von Ferechteh H. Teherani, David C. Look und David J. Rogers. SPIE, 2019. http://dx.doi.org/10.1117/12.2508646.
Der volle Inhalt der QuelleHaglund, Richard F., und Sharon M. Weiss. „Exploiting the VO2 metal-insulator transition in nanoscale optical devices“. In Photonic and Phononic Properties of Engineered Nanostructures XI, herausgegeben von Ali Adibi, Shawn-Yu Lin und Axel Scherer. SPIE, 2021. http://dx.doi.org/10.1117/12.2589958.
Der volle Inhalt der QuelleGhosh, Ram Krishna, und Suman Datta. „Orbitronics — Harnessing metal insulator phase transition in 1T-MoSe2“. In 2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD). IEEE, 2016. http://dx.doi.org/10.1109/sispad.2016.7605156.
Der volle Inhalt der QuelleAldrigo, Martino, Mircea Dragoman und Diego Masotti. „Metal-Insulator Transition in Monolayer MoS2 for Tunable and Reconfigurable Devices“. In 2018 International Semiconductor Conference (CAS). IEEE, 2018. http://dx.doi.org/10.1109/smicnd.2018.8539834.
Der volle Inhalt der QuelleChoi, Sungyoul, Bong-Jun Kim, Yong Wook Lee, Sun Jin Yun und Hyun-Tak Kim. „Synthesis of VO2 Nanowire and Observation of the Metal-Insulator Transition“. In 2007 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2007. http://dx.doi.org/10.7567/ssdm.2007.p-13-4.
Der volle Inhalt der QuelleLim, Jung Wook, Sun Jin Yun, Yong Wook Lee, Bong Joon Kim und Hyun Tak Kim. „Abrupt metal insulator transition of TiO2 and AlxTi1-xOy thin films“. In 2007 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2007. http://dx.doi.org/10.7567/ssdm.2007.p-9-13.
Der volle Inhalt der QuelleLin, J., Annadi, S. Sonde, C. Chen, L. Stan, K. V. L. V. Achari, S. Ramanathan und S. Guha. „Low-voltage artificial neuron using feedback engineered insulator-to-metal-transition devices“. In 2016 IEEE International Electron Devices Meeting (IEDM). IEEE, 2016. http://dx.doi.org/10.1109/iedm.2016.7838541.
Der volle Inhalt der QuelleNakajima, Makoto, Naoko Takubo, Zenji Hiroi, Yutaka Ueda und Tohru Suemoto. „Photo-induced insulator-metal phase transition observed by the terahertz pump-probe spectroscopy“. In SPIE OPTO: Integrated Optoelectronic Devices, herausgegeben von Kong-Thon Tsen, Jin-Joo Song, Markus Betz und Abdulhakem Y. Elezzabi. SPIE, 2009. http://dx.doi.org/10.1117/12.810003.
Der volle Inhalt der QuelleXiao, D., K. W. Kim, J. M. Zavada und G. Lazzi. „Realization of tunable photonic crystals based on the metal insulator transition of VO 2“. In Integrated Optoelectronic Devices 2006, herausgegeben von Ali Adibi, Shawn-Yu Lin und Axel Scherer. SPIE, 2006. http://dx.doi.org/10.1117/12.643920.
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