Zeitschriftenartikel: „LED's“

1

Stevenson, Richard. „The LED's dark secret“. IEEE Spectrum 46, Nr. 8 (August 2009): 26–31. http://dx.doi.org/10.1109/mspec.2009.5186552.

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2

Gebauer, T., und G. Schmid. „Inorganic-organic Hybrid Structured LED's“. Zeitschrift für anorganische und allgemeine Chemie 625, Nr. 7 (Juli 1999): 1124–28. http://dx.doi.org/10.1002/(sici)1521-3749(199907)625:7<1124::aid-zaac1124>3.0.co;2-t.

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3

Ayabe, Takahiro, Kenji Honma, Hironobu Kiyomoto und Takashi Tsutsumi. „Development of Lighting Sources using LED's“. JOURNAL OF THE ILLUMINATING ENGINEERING INSTITUTE OF JAPAN 87, Appendix (2003): 186. http://dx.doi.org/10.2150/jieij1980.87.appendix_186.

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4

Kijima, Y., N. Asai, N. Kishii und S. I. Tamura. „RGB luminescence from passive-matrix organic LED'S“. IEEE Transactions on Electron Devices 44, Nr. 8 (1997): 1222–28. http://dx.doi.org/10.1109/16.605458.

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5

Faranda, Roberto, Stefania Guzzetti, George Cristian Lazaroiu und Sonia Leva. „Refrigerating liquid prototype for LED's thermal management“. Applied Thermal Engineering 48 (Dezember 2012): 155–63. http://dx.doi.org/10.1016/j.applthermaleng.2012.05.018.

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6

Antoniadis, Homer, Mark R. Hueschen, Jeffrey N. Miller, Ronald L. Moon, Daniel B. Roitman und James R. Sheats. „Failure modes in vapor-deposited organic led's“. Macromolecular Symposia 125, Nr. 1 (Januar 1998): 59–67. http://dx.doi.org/10.1002/masy.19981250104.

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7

Hase, Mangesh, Paras Bhanushali, Parth Vora, Prerna Goswami und M. A. K. Kerawalla. „Li-Fi-Technology: LED's to Access the Internet!“ Invertis Journal of Science & Technology 11, Nr. 4 (2018): 189. http://dx.doi.org/10.5958/2454-762x.2018.00024.0.

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8

Van Roy, W., P. Van Dorpe, J. De Boeck und G. Borghs. „Spin injection in LED's and in unipolar devices“. Materials Science and Engineering: B 126, Nr. 2-3 (Januar 2006): 155–63. http://dx.doi.org/10.1016/j.mseb.2005.09.021.

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9

Oelgart, G., R. Stegmann und D. Kaatsch. „The local distribution of luminescence generation in LED's“. Crystal Research and Technology 20, Nr. 11 (November 1985): 1467–74. http://dx.doi.org/10.1002/crat.2170201108.

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10

Scholz, Ferdinand, Thomas Wunderer, Barbara Neubert, Martin Feneberg und Klaus Thonke. „GaN-Based Light-Emitting Diodes on Selectively Grown Semipolar Crystal Facets“. MRS Bulletin 34, Nr. 5 (Mai 2009): 328–33. http://dx.doi.org/10.1557/mrs2009.95.

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AbstractIn this article, we briefly review a particular approach to fabricate light-emitting diode (LED) structures on the semipolar side facets of triangular GaN stripes grown by selective area epitaxy. This approach enables a significant reduction of the internal piezoelectric fields in the LED's active area, while still maintaining the well-established c-direction as the main epitaxial growth direction for GaN-based devices on large area substrates. For the latter, these internal fields are responsible for the lower efficiency of GaN-based LEDs in the longer (green) wavelength range. The reduced internal fields of such semipolar LEDs can be directly determined by photoluminescence (PL) investigations on pre-biased LED structures and further confirmed by time-resolved PL studies. The epitaxial growth behavior is strongly facet-dependent, leading to different surface flatnesses on different semipolar facets formed by this procedure and different – indium incorporation efficiencies. An increased indium uptake on semipolar {1101} facets as compared to conventional c-plane layers can help to shift the LED emission to longer wavelengths near 500 nm, despite the significantly reduced field-dependent Stark shift, which helps to reach the green wavelength range in polar LEDs.

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11

Miyagawa, H., R. Satoh, Y. Iwata, E. Morinaga und S. Kamo. „Study on Thermal Proof of SnO2 Protection Thin Film for Ultra High Reflective Film Ag System“. International Symposium on Microelectronics 2010, Nr. 1 (01.01.2010): 000458–61. http://dx.doi.org/10.4071/isom-2010-wa3-paper5.

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Because it has longer life and uses much less power than filament lighting, LED is expected to be the next-generation lighting device. Moreover, taking advantage of its special properties, LED's are not limited to general lighting. There have been advances in the application of LED's to LCD's and car headlamps. To raise the luminosity efficiency of LED's, the metallic reflective film with the highest reflectivity is used. As a reflective film material, Ag has the highest reflectivity in the visual light range (400–800nm) and is used in many cases. However, Ag is a thermally active material and we have concerns about the decrease in reflectivity by aggregation and heat treatment sulfuration. In this study we investigate an ultra high heat proof protective film for a thin Ag reflective film. Conventionally, SiO2 thin film is used as a protective film for Ag reflective film, but it is difficult to obtain heat proofing > 473K. In this research we consider a SnO2 protective film which combines high heat proofing and high crystallinity. We formed a SnO2 protective film on an Ag thin film under various conditions, and investigated its heat proofing characteristics. We succeeded in obtaining ultra-high heat proofing exceeding 773K using several 10 nm protective film. Furthermore, in trying to understand the mechanism of this outstanding high heat proofing reflective film system, it became clear that the crystallinity in high temperature diffusion plays a major role. In addition, we have found the possible beginnings of a general theory for high temperature stability for nanotechnology.

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12

Ge, Peng, Peipei Yin, Hong Wang und Tianhai Chang. „Image matching technology in high power LED's eutectic welding“. Optics Express 22, Nr. 11 (28.05.2014): 13531. http://dx.doi.org/10.1364/oe.22.013531.

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13

Grot, A. C., D. Psaltis, K. V. Shenoy und C. G. Fonstad. „Integration of LED's and GaAs circuits by MBE regrowth“. IEEE Photonics Technology Letters 6, Nr. 7 (Juli 1994): 819–21. http://dx.doi.org/10.1109/68.311465.

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14

Kashima, Y., A. Matoba und H. Takano. „Linear InGaAsP edge-emitting LED's for single-mode fiber communications“. Journal of Lightwave Technology 10, Nr. 11 (1992): 1650–55. http://dx.doi.org/10.1109/50.184904.

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15

Guo, Shanshan, Hanting Gu, Lan Wu und Shuixiu Jiang. „Energy-Saving Tunnel Illumination System Based on LED's Intelligent Control“. Journal of Physics: Conference Series 276 (01.02.2011): 012164. http://dx.doi.org/10.1088/1742-6596/276/1/012164.

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16

Silvero, María Jazmín, Gerardo Aníbal Argüello und María Cecilia Becerra. „Photodynamic Antibacterial Chemoterapy (PACT) Using Gold Nanoparticles and LED's Irradiation“. Journal of Nanopharmaceutics and Drug Delivery 2, Nr. 2 (01.06.2014): 148–52. http://dx.doi.org/10.1166/jnd.2014.1048.

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17

De Neve, H., J. Blondelle, R. Baets, P. Demeester, P. Van Daele und G. Borghs. „High efficiency planar microcavity LED's: comparison of design and experiment“. IEEE Photonics Technology Letters 7, Nr. 3 (März 1995): 287–89. http://dx.doi.org/10.1109/68.372748.

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18

Kuo-Liang Chen und D. Kerps. „Coupling efficiency of surface-emitting LED's to single-mode fibers“. Journal of Lightwave Technology 5, Nr. 11 (1987): 1600–1604. http://dx.doi.org/10.1109/jlt.1987.1075446.

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19

Bockstaele, R., C. Sys, J. Bondelle, B. Dhoedt, I. Moerman, P. van Daele, P. Demeester und R. Baets. „Resonant cavity LED's optimized for coupling to polymer optical fibers“. IEEE Photonics Technology Letters 11, Nr. 2 (Februar 1999): 158–60. http://dx.doi.org/10.1109/68.740689.

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20

EGUCHI, KEI. „DESIGN OF A DUAL-INPUT SERIAL DC–DC CONVERTER REALIZING INDIVIDUAL SWITCHING MODES“. Journal of Circuits, Systems and Computers 20, Nr. 06 (Oktober 2011): 1075–94. http://dx.doi.org/10.1142/s0218126611007773.

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To drive a white light-emitting diode (LED) in portable devices, a dual-input serial DC–DC converter realizing individual switching modes is proposed in this paper. Unlike conventional single-input converters, the proposed converter provides output voltage by converting not only battery energy but also solar energy. Therefore, the proposed converter can suppress energy consumption of a battery. Furthermore, in the proposed converter, the -1/m× stepped-down voltage (m = 1,2,…,N) is generated to drive LED's cathode only when the voltage of solar-cells is insufficient to drive 1 × transfer mode. In other words, when the voltage of solar-cells is sufficient to drive LEDs, the proposed converter is in standby mode. For this reason, the proposed converter can realize high power efficiency, because energy loss caused by the power conversion is suppressed. The properties of the proposed converter are clarified by theoretical analyses. Furthermore, SPICE simulations and experiments show the validity of circuit design, where theoretical results correspond well with SPICE simulated results. For this reason, derived theoretical formulas can provide basic information to design negative switched capacitors (SC) DC–DC converters. The proposed converter will be useful as a driver circuit of white LEDs for display backlighting.

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21

Liu, Mu-Qing, Xiao-Li Zhou, Wen-Yi Li, Yu-Yang Chen und Wan-Lu Zhang. „Study on methodology of LED's luminous flux measurement with integrating sphere“. Journal of Physics D: Applied Physics 41, Nr. 14 (04.07.2008): 144012. http://dx.doi.org/10.1088/0022-3727/41/14/144012.

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22

Choi, H. K., G. W. Turner, T. H. Windhorn und Bor-Yeu Tsaur. „Monolithic integration of GaAs/AlGaAs double-heterostructure LED's and Si MOSFET's“. IEEE Electron Device Letters 7, Nr. 9 (September 1986): 500–502. http://dx.doi.org/10.1109/edl.1986.26452.

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23

Kot, M., und K. Zdansky. „Measurement of radiative and nonradiative recombination rate in InGaAsP-InP LED's“. IEEE Journal of Quantum Electronics 28, Nr. 8 (1992): 1746–50. http://dx.doi.org/10.1109/3.142567.

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24

Li, De Sheng, Nian Yu Zou, Yun Cui Zhang, Xiao Yang He und Yi Yang. „Study of High-Power White LED's Lifetime Based on Accelerated Life Test“. Advanced Materials Research 800 (September 2013): 205–9. http://dx.doi.org/10.4028/www.scientific.net/amr.800.205.

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The study of LED reliability becomes more and more important with LED widely used in various areas, and accelerated life test (ALT) as an element of reliability test is widely used to predict the lifetime of LED. In this paper, ALTs have been carried out at various current levels and various temperature levels. In the current ALT experiment, three kinds of stressing currents were demonstrated for 1W white LEDs and lumen flux of the tested LEDs were studied, and based on Eyting model, lifetime of the tested LEDs is calculated about 6.86×105h. In the temperature ALT experiment, two kinds of stressing temperature were demonstrated for the same type of white LEDs and lumen flux were also studied, and based on Arrhenius model, lifetime of the tested LEDs is calculated about 7.41×105h. In addition, the color shifting velocity is faster than lumens depreciation velocity was observed in our experiment, which means the lifetime evaluating of white LED should be paid more attention.

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25

Popovic, Z. D., S. Xie, N. Hu, A. Hor, D. Fork, G. Anderson und C. Tripp. „Life extension of organic LED's by doping of a hole transport layer“. Thin Solid Films 363, Nr. 1-2 (März 2000): 6–8. http://dx.doi.org/10.1016/s0040-6090(99)00970-0.

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26

Matyáš, M. „Deep levels and processes in the course of degradation of GaP:N LED's“. physica status solidi (a) 97, Nr. 1 (16.09.1986): 297–305. http://dx.doi.org/10.1002/pssa.2210970129.

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27

Ozuturk, Erdem. „Formulation of the LED's radiant power⿿current characteristic at pulsed high currents“. Optik - International Journal for Light and Electron Optics 124, Nr. 18 (September 2013): 3549–53. http://dx.doi.org/10.1016/j.ijleo.2012.10.056.

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28

Khan, I., G. Rooh, R. Rajaramakrishna, N. Srisittipokakun, H. J. Kim, K. Kirdsiri und J. Kaewkhao. „Luminescence characteristics of Sm3+-doped lithium barium gadolinium silicate glasses for Orange LED's“. Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy 214 (Mai 2019): 14–20. http://dx.doi.org/10.1016/j.saa.2019.01.086.

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29

Bedair, Salah M., Phillip Barletta, Acar Berkman, Ahmed Emara, Mason Reed, Nadia A. El-Masry und Baxter Moody. „Development of Yellow and White LED's Using InGaN-based Multi-Quantum well Structures“. ECS Transactions 3, Nr. 5 (21.12.2019): 315–21. http://dx.doi.org/10.1149/1.2357220.

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30

Novotný, J., L. Vyhnalík und J. Zelinka. „Preparation of High-quality InGaAsP/InP Heterostructures for Edge-emitting 1.3 μm LED's“. Crystal Research and Technology 28, Nr. 1 (1993): 19–27. http://dx.doi.org/10.1002/crat.2170280105.

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31

Choi, H. K., G. W. Turner, T. H. Windhorn und B. Y. Tsaur. „VA-5 Monolithic integration of GaAs/AlGaAs double-heterostructure LED's and Si MOSFET's“. IEEE Transactions on Electron Devices 33, Nr. 11 (November 1986): 1857–58. http://dx.doi.org/10.1109/t-ed.1986.22807.

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32

Allen, J. W., und Hermann G. Grimmeiss. „Visible Light-Emitting Diodes - The Formative Years“. Materials Science Forum 590 (August 2008): 1–16. http://dx.doi.org/10.4028/www.scientific.net/msf.590.1.

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A brief history of visible light-emitting diodes (LED's) is given, from the first experimental observations of H.J.Round in 1907 to the mid-1970's when red and green emitters were in extensive production. Early investigations were empirical. This was changed with the invention of the transistor in 1947 by the demonstration of minority carrier injection at a forwardbiased junction, followed by recombination. In 1952 the discovery of the semiconducting behaviour of III-V compounds introduced a new range of materials. Gallium nitride seemed attractive for light emission and was investigated at Philips and RCA laboratories but at the time proved to be too difficult for practical use. Gallium phosphide emerged as the most promising material and groups to investigate it were set up at SERL in England, Philips Central Research Laboratories in Germany and Bell Telephone Laboratories in the USA. Zinc and oxygen doping gave red emission. At Philips, the emphasis was on efficiencies. At SERL the emphasis was on reproducibility for manufacturable devices and when the conditions for zinc and oxygen doping were strictly controlled the world's first practical visible LED's were produced at the end of 1961. At Bell Telephone Laboratories progress was initially slow but with the advent of liquid-phase epitaxial growth production of red emitters on the scale required became possible. The accidental discovery of nitrogen doping of gallium phosphide at Bell led to the production of good green emitters. Until the end of the 1970's, gallium phosphide red and green emitters dominated the LED market. Subsequent developments to the present day are sketched in outline.

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33

Asada, Hideyuki, Nabil Abd Rabou, Hiroaki Ikeda, Yoshifumi Shimodaira und Hirofumi Yoshida. „Handheld digital video code distributor using edge-emitting LED's and single mode optical fibers“. Computer Standards & Interfaces 20, Nr. 6-7 (März 1999): 438–39. http://dx.doi.org/10.1016/s0920-5489(99)90895-4.

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34

Asada, H., N. A. Rabou, H. Ikeda, Y. Shimodaira und H. Yoshida. „Handheld digital video code distributor using edge-emitting LED's and single mode optical fibers“. IEEE Transactions on Consumer Electronics 44, Nr. 1 (1998): 155–62. http://dx.doi.org/10.1109/30.663742.

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35

Meng-Chyi Wu, Jyh-Feng Lin, Ming-Jiuun Jou, Chuan-Ming Chang und Biing-Jye Lee. „High reliability of AlGaInP LED's with efficient transparent contacts for spatially uniform light emission“. IEEE Electron Device Letters 16, Nr. 11 (November 1995): 482–84. http://dx.doi.org/10.1109/55.468274.

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36

Silva, Guilherme Marques dos Santos, Felipe Braga Ribas und Mário Sérgio Teixeira de Freitas. „Transformação de coordenadas aplicada à construção da maquete tridimensional de uma constelação“. Revista Brasileira de Ensino de Física 30, Nr. 1 (2008): 1306.1–1306.7. http://dx.doi.org/10.1590/s1806-11172008000100007.

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Neste trabalho descrevemos uma atividade teórico-experimental, destinada a alunos de graduação em ciências exatas ou do ensino médio, cujo objetivo principal consiste em aplicar conceitos físicos e matemáticos para resolver problemas decorrentes da construção de uma maquete tridimensional da constelação do Cruzeiro do Sul. O aparato é feito com material de custo moderado como LED's brancos adaptados a potenciômetros para o ajuste de brilho. O conteúdo teórico é composto de conceitos básicos sobre astronomia de posição, transformação de coordenadas e geometria e trigonometria elementares. Neste artigo, discutem-se aspectos da execução da atividade, tendo sido incluída uma listagem dos materiais utilizados. Também são mostradas algumas imagens fotográficas do resultado obtido.

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37

Pan, Jianbiao. „Effect of Voiding in Solder Joints on Thermal Performance of the LED“. International Symposium on Microelectronics 2013, Nr. 1 (01.01.2013): 000895–901. http://dx.doi.org/10.4071/isom-2013-thp46.

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Light-Emitting Diode (LED) lighting has potential to fundamentally alter lighting by replacing incandescent and fluorescent technologies because it offers significant energy saving, longer operational life, and many other advantages. Excellent thermal management and low-cost is vital for LED lighting to become the market standard for general lighting. The packaged LED is typically soldered to the metal-core printed circuit board (MCPCB). However, as the size of the packaged LED increases, voiding in solder joints becomes a major problem since voiding increases the thermal resistance. The research questions are: what is the effect of flux in solder paste and the LED size on the voiding? What is the relationship between the voiding and the thermal performance of the LED? In this study, packaged LEDs with three different sizes were assembled to MCPCBs using solder paste with two different types of fluxes. The voiding in solder joints was imaged by an X-Ray machine. The detailed void characteristics were analyzed. The LED's junction temperature was measured based on the diode's forward voltage junction temperature measurement method. The results show that both flux in solder paste and the LED size have significant effect on the voiding. There is weak positive correlation between the voiding and the thermal performance when the voiding is over 25% coverage. However, the effect of voiding on the thermal performance is insignificance when the voiding is less than 25% coverage.

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38

ZHOU, Zheng, Wen-nan MIAO, Ya LI, Xiao-yan LONG und Jian LI. „Influence mechanism of GaN-LED's PN junction area on modulation bandwidth in visible light communication“. Optics and Precision Engineering 28, Nr. 7 (2020): 1494–99. http://dx.doi.org/10.37188/ope.20202807.1494.

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39

YOO, Sam Joo, Joo Hyun LEE und Hyun Kyoung YANG*. „Development of a LED's Heat Sink by Using a Biodegradable Composite Plastic and Its Characterization“. New Physics: Sae Mulli 66, Nr. 5 (31.05.2016): 511–16. http://dx.doi.org/10.3938/npsm.66.511.

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40

Cavalcante, Marisa Almeida, und Rafael Haag. „Corpo negro e determinação experimental da constante de Planck“. Revista Brasileira de Ensino de Física 27, Nr. 3 (September 2005): 343–48. http://dx.doi.org/10.1590/s1806-11172005000300007.

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Este trabalho visa contribuir na área de instrumentação para o ensino de Física, apresentando uma nova proposta para a determinação da constante de Planck utilizando diodos de emissão de luz, LED's (Light Emitting Diode) como sensores espectrais seletivos da radiação emitida por um filamento aquecido. A largura típica de resposta espectral de um LED, utilizado como sensor na região de 550nm a 700nm é da ordem de 25 a 35 nm o que nos permite selecionar adequadamente, para fins didáticos, o comprimento de onda da radiação analisada. Apresentamos também uma proposta de verificação da lei de Stefan-Boltzmann, permitindo portanto, uma abordagem experimental do tema da distribuição de energia de um corpo negro, normalmente estudado em cursos de bacharelado e licenciatura em Física.

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41

Suzuki, A., T. Uji, Y. Inomoto, J. Hayashi, Y. Isoda und H. Nomura. „InGaAsP/InP 1.3-µm wavelength surface-emitting LED's for high-speed short-haul optical communication systems“. IEEE Transactions on Electron Devices 32, Nr. 12 (Dezember 1985): 2609–14. http://dx.doi.org/10.1109/t-ed.1985.22391.

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42

Vijayakumar, R., G. Venkataiah und K. Marimuthu. „Structural and luminescence studies on Dy3+ doped boro-phosphate glasses for white LED's and laser applications“. Journal of Alloys and Compounds 652 (Dezember 2015): 234–43. http://dx.doi.org/10.1016/j.jallcom.2015.08.219.

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43

Hou, Qian Qian, Pei Xin Zhang, Ming Fang Zhang, Zheng Wu Lu und Xiang Zhong Ren. „Development of the Research on High-Power WLEDs“. Advanced Materials Research 158 (November 2010): 42–51. http://dx.doi.org/10.4028/www.scientific.net/amr.158.42.

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Compared with traditional lighting, LED has many unparalleled advantages, and is considered to be the most promising green light which may be able to substitute incandescent and fluorescent lamps. The requirement of LED's luminous efficiency grows with its increasingly application in the lighting field. This paper summarizes the development of gaining approaches of Power-type WLED and their respective advantages and disadvantages; analyses several effective programs which can improve luminous efficiency, including changing substrate materials as to enhance the heat-release performance as well as the impact of chip structure design, the packaging materials and technology or other factors; proposes a new LED packaging material- inorganic fluorescent glass, which is expected to simplify the packaging process greatly, at last, there is an expectation of High-power WLED in future application.

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44

Tean-Sen Jen, Nerng-Fu Shin, Li-Hong Laih, Yen-Ann Chen, Jyh-Wong Hong und Chun-Yen Chang. „Electrical and luminescent characteristics of a-SiC:H p-i-n thin-film LED'S with graded-gap junctions“. IEEE Transactions on Electron Devices 44, Nr. 4 (April 1997): 565–71. http://dx.doi.org/10.1109/16.563359.

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45

Li, Fang, Kan Wu, Weiwen Zou und Jianping Chen. „Optimization of LED's SAHPs to simultaneously enhance SNR uniformity and support dimming control for visible light communication“. Optics Communications 341 (April 2015): 218–27. http://dx.doi.org/10.1016/j.optcom.2014.12.025.

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46

Latal, Jan, Patrik Hanulak, Jakub Kolar, Zdenek Wilcek, Tomas Stratil und Filip Sarlej. „Measurement of colour coordinates of LEDs used in the automotive exterior lighting“. International Journal of Electrical and Computer Engineering (IJECE) 11, Nr. 3 (19.01.2021): 2711. http://dx.doi.org/10.11591/ijece.v11i3.pp2711-2724.

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Article deals with dichromatic white light-emitting diode (LED’s) color coordinates used in automotive exterior lighting. This article also describes basic white automotive LED functionality and basic physical processes that create white light of these LEDs. It focuses on measuring color coordinates of white automotive LEDs with different temperature of LED and how the LED’s color depends on LED’s temperature. The article is comparing very important datasheet information of LED producers and values measured in the laboratory at university. The article contains statistical results of measurements and graphical representation of measured values and declared color bins which are very important for producers of headlamps for automotive companies.

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47

Janietz, S., A. Wedel und R. Friedrich. „Electrochemical redox behavior of aromatic poly(1,3,4-oxadiazole)s and sulfur containing polymers and their use in LED's“. Synthetic Metals 84, Nr. 1-3 (Januar 1997): 381–82. http://dx.doi.org/10.1016/s0379-6779(97)80792-8.

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48

Woodall, Jerry. „Electronic properties of semiconductor interfaces“. Proceedings, annual meeting, Electron Microscopy Society of America 45 (August 1987): 334–37. http://dx.doi.org/10.1017/s0424820100126470.

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Over the past decade III-V materials have been successfully commercialized for optoelectronic applications requiring LED's lasers and photodetectors. The success of these materials for these applications is based primarily on the use of heterojunction structures formed by epitaxial techniques in a manufacturing environment. More recently, III-V materials, notably GaAs, have been studied in the R&D environment as possible materials for use in high speed devices and circuits including VLSI. Even though the use of epitaxially grown structures has played a significant role in the success of laboratory scale devices and circuits, there are still several technology problems which will need to be solved before affordable manufacturing can be done. Two important challenges facing the commercialization of these materials for this application are metal contacts, and dielectrics for control and passivation. Both of these challenges are rooted in a common problem. Stated simply, the problem is that at nearly all GaAs/metal or dielectric interfaces the Fermi level is pinned near mid-gap.

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King, W. C., B. H. Chin, I. Camlibel und C. L. Zipfel. „High-speed high-power 1.3-µm InGaAsP/InP surface-emitting LED's for short-haul wide-bandwidth optical-fiber communications“. IEEE Electron Device Letters 6, Nr. 7 (Juli 1985): 335–37. http://dx.doi.org/10.1109/edl.1985.26146.

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Arshed, M., N. Baber, M. Z. Iqbal und N. Zafar. „Non-exponential dark capacitance transients from red-emitting GaP LED's — Field and edge effects on the 0.75 eV centre“. Applied Physics A 40, Nr. 2 (Juni 1986): 129–32. http://dx.doi.org/10.1007/bf00616489.

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