Auswahl der wissenschaftlichen Literatur zum Thema „Lasers à îlot quantiques“
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Zeitschriftenartikel zum Thema "Lasers à îlot quantiques"
Cheng, SuPing, François Brillouet und François Alexandre. „Étude de la sous-linéarité du gain dans les lasers à puits quantiques“. Annales des Télécommunications 43, Nr. 3-4 (März 1988): 109–11. http://dx.doi.org/10.1007/bf02999515.
Der volle Inhalt der QuelleResneau, P., M. Calligaro, O. Parillaud, S. Bansropun und M. Krakowski. „Lasers à boîtes quantiques sur InP à 1,55 mum présentant en fonctionnement continu une puissance élevée, un très faible bruit et une longue durée de vie“. Journal de Physique IV (Proceedings) 135, Nr. 1 (Oktober 2006): 267–68. http://dx.doi.org/10.1051/jp4:2006135084.
Der volle Inhalt der QuelleGUIMARD, Denis, und Yasuhiko ARAKAWA. „Lasers à boîtes quantiques autoassemblées d'InAs/GaAs“. Optique Photonique, Januar 2009. http://dx.doi.org/10.51257/a-v1-nm2050.
Der volle Inhalt der QuelleDissertationen zum Thema "Lasers à îlot quantiques"
Doré, François. „Emetteurs à îlots quantiques pour le moyen-infrarouge“. Rennes, INSA, 2008. http://www.theses.fr/2008ISAR0024.
Der volle Inhalt der QuelleType I band lineups calculation for narrow gap structures on InP(001) substrate are presented It reveals the interest of InAsSb/GaAsSb association. Single dot model show a mixing of valence and conduction eigenfunctions in the confined eigenstates. This effect leads to non-radiative relaxations. Geometry has a strong impact on related characteristic times. IVBA calculations show a negative trend towards long wavelengths except for favoured areas. Large gap of strained InAs implies the use of big islands with low densities. Gain is then reduced. A 4 QD layers laser emitting at 1. 85 µm at 20 K has a threshold current density of 3,4 kA/cm². InAsSb dots formation in GaAsSb barrier turns out to be difficult. Antimony presence on the surface inhibits 2D-3D transition. Nevertheless this effect permits the formation of larger dots or thicker wells emitting until 2. 35 µm at 300 K
Ding, Shihao. „Exploring nonlinear dynamics and amplitude squeezing of quantum dot lasers“. Electronic Thesis or Diss., Institut polytechnique de Paris, 2024. http://www.theses.fr/2024IPPAT008.
Der volle Inhalt der QuellePhotonic integrated circuits (PICs) utilizing silicon photonics technology show significant potential in high-speed communication systems, optical computing, and quantum technology. Quantum dot (QD) lasers, particularly those epitaxially grown on silicon, exhibit notable characteristics such as strong defect tolerance, low threshold current, and good temperature stability. As a result, they are gradually emerging as promising on-chip laser sources for PICs. This thesis aims to explore the nonlinear dynamics and quantum state properties of QD lasers, laying the foundation for various potential applications. The first section of the thesis delves into the role of the linewidth enhancement factor (αH-factor) in QD lasers. I employed an optical phase modulation technique to extract the above-threshold αH-factor of QD lasers. The small αH-factor of QD lasers strongly improved optical feedback tolerance. This facilitates the development of high-speed optical transmission on chips without an optical isolator and increases integration density. The second section explores the dynamic characteristics of QD lasers under optoelectronic feedback (OEF). Unlike optical feedback, I demonstrated that QD lasers exhibit enhanced sensitivity to OEF, leading to various complex dynamics. This extreme sensitivity is crucial for the advancement of on-chip silicon-based optical computing and Ising machine applications, a phenomenon not observed in quantum well (QW) lasers. In the third section, I analyzed the dependency of frequency noise on external carrier noise. The research revealed that quiet pumping is highly advantageous for minimizing the αH-factor, reducing frequency noise, and consequently narrowing the optical linewidth of QD lasers. The last section highlights the generation of amplitude-squeezed light directly from a constant-current-driven semiconductor QD laser. With the quiet pump, I achieved a substantial gigahertz squeezing bandwidth at room temperature with a squeezing ratio of 3.5 dB. The extreme reflection insensitivity of the squeezed QD generator under optical feedback, in contrast to a reference laser using standard QW technology, is also demonstrated with a squeezing ratio further improved to 5.7 dB. Three distinct measurements, including the sub-shot-noise radiofrequency spectrum, sub-Poissonian photon statistics, and second-order correlation function at zero delay, validate my findings. This research establishes a foundational framework for compact and highly efficient photonic quantum integrated circuits, showcasing the immense application potential of QD lasers in both classical and quantum photonics fields
Hayau, Jean-François. „Caractérisation de composants photoniques à base d'ïlots quantiques à semi-conducteurs InAs/InP : bruit et injection optique“. Rennes 1, 2009. https://tel.archives-ouvertes.fr/tel-00511839.
Der volle Inhalt der QuelleHao, Zhenyu. „Caractérisations de structures à base d'îlots, bâtonnets quantiques en termes de bruit, non linéarité et d'injection optique“. Phd thesis, Université Rennes 1, 2013. http://tel.archives-ouvertes.fr/tel-00940272.
Der volle Inhalt der QuelleDong, Bozhang. „Quantum-dot lasers on silicon : nonlinear properties, dynamics, and applications“. Electronic Thesis or Diss., Institut polytechnique de Paris, 2021. http://www.theses.fr/2021IPPAT047.
Der volle Inhalt der QuelleSilicon photonics is promising for high-speed communication systems, short-reach optical interconnects, and quantum technologies. Direct epitaxial growth of III-V materials on silicon is also an ideal solution for the next generation of photonic integrated circuits (PICs). In this context, quantum-dots (QD) lasers with atom-like density of states are promising to serve as the on-chip laser sources, owing to their high thermal stability and strong tolerance for the defects that arise during the epitaxial growth. The purpose of this dissertation is to investigate the nonlinear properties and dynamics of QD lasers on Si for PIC applications. The first part of this thesis investigates the dynamics of epitaxial QD lasers on Si subject to external optical feedback (EOF). In the short-cavity regime, the QD laser exhibits strong robustness against parasitic reflections hence giving further insights for developing isolator-free PICs. In particular, a near-zero linewidth enhancement factor is crucial to achieve this goal. The second part is devoted to studying the static properties and dynamics of a single-frequency QD distributed feedback (DFB) laser for uncooled and isolator-free applications. The design of a temperature-controlled mismatch between the optical gain peak and the DFB wavelength contributes to improving the laser performance with the increase of temperature. The third part of this dissertation investigates the QD-based optical frequency comb (OFC). External control techniques including EOF and optical injection are used to optimize the noise properties, reduce the timing-jitter, and increase the frequency comb bandwidth. In the last part, an investigation of the optical nonlinearities of the QD laser on Si is carried out by the four-wave mixing (FWM) effect. This study demonstrates that the FWM efficiency of QD laser is more than one order of magnitude higher than that of a commercial quantum-well laser, which gives insights for developing self-mode-locked OFCs based on QD. All these results allow for a better understanding of the nonlinear dynamics of QD lasers and pave the way for developing high-performance classical and quantum PICs on Si
CAVELIER, MARC. „Etude de la dynamique des lasers a semiconducteurs : lasers a puits quantiques et lasers conventionnels“. Paris 11, 1992. http://www.theses.fr/1992PA112237.
Der volle Inhalt der QuelleLamkadmi, Azouigui Shéhérazade. „Lasers à boîtes quantiques et tolérance à la rétroaction optique“. Evry, Institut national des télécommunications, 2008. http://www.theses.fr/2008TELE0007.
Der volle Inhalt der QuelleHayau, Jean-Francois. „Caractérisation de composants photoniques à base d'îlots quantiques à semi-conducteurs InAs/InP : bruit et injection optique“. Phd thesis, Université Rennes 1, 2009. http://tel.archives-ouvertes.fr/tel-00511839.
Der volle Inhalt der QuelleYao, Jun. „Étude des non-linéarités optiques et des effets de capture des porteurs dans les lasers semi-conducteurs à puits quantiques /“. Paris : École nationale supérieure des télécommunications, 1994. http://catalogue.bnf.fr/ark:/12148/cb35691387x.
Der volle Inhalt der QuelleOlejniczak, Lukasz. „Polarization properties and nonlinear dynamics of quantum dot lasers“. Thesis, Metz, 2011. http://www.theses.fr/2011METZ001S/document.
Der volle Inhalt der QuelleIn this thesis we first show our experimental results on polarization instabilities in quantum dot (QD) lasers with vertical cavity, so called VCSELs. Their characteristics are different from what is typically observed in their QW counterparts: light that is linearly polarized close to lasing threshold becomes elliptically polarized as current is increased and then a wide region of polarization mode hopping between nonorthogonal, elliptically polarized modes sets on. Within this region the average dwell time decreases by eight orders of magnitude from seconds to nanoseconds. To our best knowledge this is the first observation of such a diversified dynamics of polarization mode hopping in a single VCSEL. We have also carried out theoretical studies of optically injected QD lasers accounting for the intradot carrier dynamics through the higher-energy excited states. We show that experimentally observed excitable pulses are complemented by self-pulsations resulting from the so-called bottleneck phenomenon. Finally, we have theoretically investigated optically injected QD laser lasing simultaneously from the ground and excited states. We show that although the external light is injected to the ground state mode alone, modulation of the relaxation time induced by injected signal can provide a gain switching mechanism leading to generation of picosecond pulses from the excited state
Bücher zum Thema "Lasers à îlot quantiques"
Optics of Nanomaterials. Taylor & Francis Group, 2010.
Den vollen Inhalt der Quelle findenGavrilenko, Vladimir I. Optics of Nanomaterials. Jenny Stanford Publishing, 2019.
Den vollen Inhalt der Quelle findenGavrilenko, Vladimir I. Optics of Nanomaterials. Taylor & Francis Group, 2019.
Den vollen Inhalt der Quelle findenThe Optics of Nanomaterials. World Scientific Publishing Company, 2007.
Den vollen Inhalt der Quelle findenBuchteile zum Thema "Lasers à îlot quantiques"
„Partie I. Action d'un champ électromagnétique classique sur un système à deux états quantiques“. In Lasers, 1–142. EDP Sciences, 2002. http://dx.doi.org/10.1051/978-2-7598-0277-7.c002.
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