Zeitschriftenartikel zum Thema „Isolated gate driver“
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Gras, David, Christophe Pautrel, Amir Fanaei, Gregory Thepaut, Maxime Chabert, Fabien Laplace und Gonzalo Picun. „Highly Integrated and Isolated Universal Half-Bridge Power Gate Driver and Associated Flyback Power Supply for High Temperature and High Reliability Applications“. Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2014, HITEC (01.01.2014): 000206–13. http://dx.doi.org/10.4071/hitec-wp12.
Der volle Inhalt der QuelleMatalata, Hendi, und Rozlinda Dewi. „Desain Rangkaian Gate Driver Analog untuk Dual Mosfet Drivers“. Jurnal Ilmiah Universitas Batanghari Jambi 21, Nr. 2 (04.07.2021): 714. http://dx.doi.org/10.33087/jiubj.v21i2.1534.
Der volle Inhalt der QuelleKuo, Hsuan-Yu, und Jau-Jr Lin. „Development of Miniaturized Monolithic Isolated Gate Driver“. Advances in Science, Technology and Engineering Systems Journal 6, Nr. 5 (September 2021): 177–84. http://dx.doi.org/10.25046/aj060520.
Der volle Inhalt der QuelleGarcia, Jorge, Sarah Saeed, Emre Gurpinar und Alberto Castellazzi. „A Study of Integrated Signal and Power Transfer for Compact Isolated SiC MOSFET Gate-Drivers“. Electronics 10, Nr. 2 (13.01.2021): 159. http://dx.doi.org/10.3390/electronics10020159.
Der volle Inhalt der QuelleDoucet, Jean-Christophe, Aimad Saib, Christian Mourad, François Piette, Etienne Vanzieleghem und Pierre Delatte. „HADES®: a High-Temperature Isolated Gate Driver Solution for SiC-based Multi-kW Converters“. Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2011, HITEN (01.01.2011): 000145–51. http://dx.doi.org/10.4071/hiten-paper3-jcdoucet.
Der volle Inhalt der QuelleMuhammad, Khairul Safuan, und Dylan Dah-Chuan Lu. „Magnetically Isolated Gate Driver With Leakage Inductance Immunity“. IEEE Transactions on Power Electronics 29, Nr. 4 (April 2014): 1567–72. http://dx.doi.org/10.1109/tpel.2013.2279548.
Der volle Inhalt der QuelleZhao, Weichuan, Sohrab Ghafoor, Gijs Willem Lagerweij, Gert Rietveld, Peter Vaessen und Mohamad Ghaffarian Niasar. „Comprehensive Investigation of Promising Techniques to Enhance the Voltage Sharing among SiC MOSFET Strings, Supported by Experimental and Simulation Validations“. Electronics 13, Nr. 8 (13.04.2024): 1481. http://dx.doi.org/10.3390/electronics13081481.
Der volle Inhalt der QuelleMayorga, J. Valle, C. Gutshall, K. Phan, I. Escorcia, H. A. Mantooth, B. Reese, M. Schupbach und A. Lostetter. „High Temperature Silicon-on-Insulator Gate Driver for SiC-FET Power Modules“. Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2011, HITEN (01.01.2011): 000152–58. http://dx.doi.org/10.4071/hiten-paper4-jmayorga.
Der volle Inhalt der QuelleMakki, Loreine, Marc Anthony Mannah, Christophe Batard, Nicolas Ginot und Julien Weckbrodt. „Investigating the Shielding Effect of Pulse Transformer Operation in Isolated Gate Drivers for SiC MOSFETs“. Energies 14, Nr. 13 (27.06.2021): 3866. http://dx.doi.org/10.3390/en14133866.
Der volle Inhalt der QuelleSugano, Ryoko, Yuchong Sun und Hiroo Sekiya. „High-frequency resonant gate driver with isolated class-E amplifier“. Nonlinear Theory and Its Applications, IEICE 9, Nr. 3 (2018): 358–73. http://dx.doi.org/10.1587/nolta.9.358.
Der volle Inhalt der QuelleBRAMBILLA, ANGELO. „SNUBBER BEHAVIOR AND DESIGN IN FLYBACK CONVERTERS FOR ISOLATED IGBT DRIVERS“. Journal of Circuits, Systems and Computers 05, Nr. 03 (September 1995): 523–29. http://dx.doi.org/10.1142/s0218126695000321.
Der volle Inhalt der QuelleZhang, Zhiliang, Fei-Fei Li und Yan-Fei Liu. „A High-Frequency Dual-Channel Isolated Resonant Gate Driver With Low Gate Drive Loss for ZVS Full-Bridge Converters“. IEEE Transactions on Power Electronics 29, Nr. 6 (Juni 2014): 3077–90. http://dx.doi.org/10.1109/tpel.2013.2272662.
Der volle Inhalt der QuelleSerban, Emanuel, Mohammad Ali Saket und Martin Ordonez. „High-Performance Isolated Gate-Driver Power Supply With Integrated Planar Transformer“. IEEE Transactions on Power Electronics 36, Nr. 10 (Oktober 2021): 11409–20. http://dx.doi.org/10.1109/tpel.2021.3070053.
Der volle Inhalt der QuelleGarcia, Jorge, Sara Saeed, Emre Gurpinar, Alberto Castellazzi und Pablo Garcia. „Self-Powering High Frequency Modulated SiC Power MOSFET Isolated Gate Driver“. IEEE Transactions on Industry Applications 55, Nr. 4 (Juli 2019): 3967–77. http://dx.doi.org/10.1109/tia.2019.2910789.
Der volle Inhalt der QuelleAhmed Rmila, Salahaldein, und Simon S. Ang. „A High-Input Voltage Two-Phase Series-Capacitor DC-DC Buck Converter“. Journal of Electrical and Computer Engineering 2020 (08.06.2020): 1–15. http://dx.doi.org/10.1155/2020/9464727.
Der volle Inhalt der QuelleChen, Changnan, Pichao Pan, Jiebin Gu und Xinxin Li. „A High-Voltage-Isolated MEMS Quad–Solenoid Transformer with Specific Insulation Barriers for Miniaturized Galvanically Isolated Power Applications“. Micromachines 15, Nr. 2 (31.01.2024): 228. http://dx.doi.org/10.3390/mi15020228.
Der volle Inhalt der QuelleChen, Lei, Caihui Zhu, Jiaming Zheng, Jian Qiu, Hui Zhao und Kefu Liu. „A Flexible Solid-State Marx Modulator Module Based on Discrete Magnetic Coupling Drivers“. Electronics 12, Nr. 18 (10.09.2023): 3831. http://dx.doi.org/10.3390/electronics12183831.
Der volle Inhalt der QuellePicun, Gonzalo, Khalil El-Falahi, Christophe Pautrel, Yoann Duse, Nicolas Joubert, Anaud Anotta, Georget Lemoyne et al. „More than Drivers in Motor Drives: Closing the Loop“. Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2015, HiTEN (01.01.2015): 000179–88. http://dx.doi.org/10.4071/hiten-session5-paper5_3.
Der volle Inhalt der QuelleRothmund, Daniel, Dominik Bortis und Johann W. Kolar. „Highly Compact Isolated Gate Driver With Ultrafast Overcurrent Protection for 10 kV SiC MOSFETs“. CPSS Transactions on Power Electronics and Applications 3, Nr. 4 (Dezember 2018): 278–91. http://dx.doi.org/10.24295/cpsstpea.2018.00028.
Der volle Inhalt der QuelleZan, Xin, und Al-Thaddeus Avestruz. „Isolated Ultrafast Gate Driver with Variable Duty Cycle for Pulse and VHF Power Electronics“. IEEE Transactions on Power Electronics 35, Nr. 12 (Dezember 2020): 12678–85. http://dx.doi.org/10.1109/tpel.2020.2999481.
Der volle Inhalt der QuelleWu, Qunfang, Qin Wang, Jinyi Zhu und Xiao Lan. „Dual-Channel Push–Pull Isolated Resonant Gate Driver for High-Frequency ZVS Full-Bridge Converters“. IEEE Transactions on Power Electronics 34, Nr. 5 (Mai 2019): 4019–24. http://dx.doi.org/10.1109/tpel.2018.2873192.
Der volle Inhalt der QuelleRashmi, Ruchi, und Shweta Jagtap. „Design of symmetrical half-bridge converter with a series coupling capacitor“. World Journal of Engineering 17, Nr. 5 (30.06.2020): 609–20. http://dx.doi.org/10.1108/wje-09-2019-0280.
Der volle Inhalt der QuelleNaik, B. Satish, S. Shan, L. Umanand und B. Subba Reddy. „A Novel Wide Duty Cycle Range Wide Band High Frequency Isolated Gate Driver for Power Converters“. IEEE Transactions on Industry Applications 54, Nr. 1 (Januar 2018): 437–46. http://dx.doi.org/10.1109/tia.2017.2764850.
Der volle Inhalt der QuelleLu, Xiaozhuang, Lixing Zhou, Zhanwu Yao und Junhua Qin. „FPGA-Based Implementation of Reverse Electrical Pulse Stress and Measurement system for Gallium Nitride High-Electron-Mobility Transistors“. Journal of Physics: Conference Series 2524, Nr. 1 (01.06.2023): 012018. http://dx.doi.org/10.1088/1742-6596/2524/1/012018.
Der volle Inhalt der QuelleSpataro, Simone, Egidio Ragonese, Nunzio Spina und Giuseppe Palmisano. „A GaN-Integrated Galvanically Isolated Data Link Based on RF Planar Coupling With Voltage Combining for Gate-Driver Applications“. IEEE Access 12 (2024): 48530–39. http://dx.doi.org/10.1109/access.2024.3383535.
Der volle Inhalt der QuelleMajima, Hideaki, Hiroaki Ishihara, Katsuyuki Ikeuchi, Toshiyuki Ogawa, Yuichi Sawahara, Tatsuhiro Ogawa, Satoshi Takaya, Kohei Onizuka und Osamu Watanabe. „Cascoded GaN half-bridge with 17 MHz wide-band galvanically isolated current sensor“. Japanese Journal of Applied Physics 61, SC (21.02.2022): SC1052. http://dx.doi.org/10.35848/1347-4065/ac4446.
Der volle Inhalt der QuelleNguyen, The Van, Jean-Christophe Crebier und Pierre-Olivier Jeannin. „Design and Investigation of an Isolated Gate Driver Using CMOS Integrated Circuit and HF Transformer for Interleaved DC/DC Converter“. IEEE Transactions on Industry Applications 49, Nr. 1 (Januar 2013): 189–97. http://dx.doi.org/10.1109/tia.2012.2229254.
Der volle Inhalt der QuelleRagonese, Egidio, Nunzio Spina, Alessandro Parisi und Giuseppe Palmisano. „An Experimental Comparison of Galvanically Isolated DC-DC Converters: Isolation Technology and Integration Approach“. Electronics 10, Nr. 10 (15.05.2021): 1186. http://dx.doi.org/10.3390/electronics10101186.
Der volle Inhalt der QuelleKołodziejski, Wojciech, Jacek Jasielski, Stanisław W. Kuta, Grzegorz Szerszeń und Witold Machowski. „Review and comparison of methods for limiting leakage currents in single-phase transformerless PV inverter topologies“. Science, Technology and Innovation 16, Nr. 3-4 (31.03.2023): 1–19. http://dx.doi.org/10.55225/sti.477.
Der volle Inhalt der QuelleHong, Kuo-Bin, Chun-Yen Peng, Wei-Cheng Lin, Kuan-Lun Chen, Shih-Chen Chen, Hao-Chung Kuo, Edward Yi Chang und Chun-Hsiung Lin. „Thermal Analysis of Flip-Chip Bonding Designs for GaN Power HEMTs with an On-Chip Heat-Spreading Layer“. Micromachines 14, Nr. 3 (23.02.2023): 519. http://dx.doi.org/10.3390/mi14030519.
Der volle Inhalt der QuelleJeng, Shyr-Long, Chih-Chiang Wu und Wei-Hua Chieng. „Gallium Nitride Electrical Characteristics Extraction and Uniformity Sorting“. Journal of Nanomaterials 2015 (2015): 1–15. http://dx.doi.org/10.1155/2015/478375.
Der volle Inhalt der QuelleThakre, Kishor, Kanungo Barada Mohanty, Vinaya Sagar Kommukuri und Aditi Chatterjee. „New Topology for Asymmetrical Multilevel Inverter: An Effort to Reduced Device Count“. Journal of Circuits, Systems and Computers 27, Nr. 04 (06.12.2017): 1850055. http://dx.doi.org/10.1142/s021812661850055x.
Der volle Inhalt der QuellePrathaban, Arumbu Venkadasamy, Karthikeyan Dhandapani und Ahamed Ibrahim Soni Abubakar. „Compact Thirteen-Level Inverter for PV Applications“. Energies 15, Nr. 8 (12.04.2022): 2808. http://dx.doi.org/10.3390/en15082808.
Der volle Inhalt der QuelleWu, Chih-Chiang, Ching-Yao Liu, Guo-Bin Wang, Yueh-Tsung Shieh, Wei-Hua Chieng und Edward-Yi Chang. „A New GaN-Based Device, P-Cascode GaN HEMT, and Its Synchronous Buck Converter Circuit Realization“. Energies 14, Nr. 12 (11.06.2021): 3477. http://dx.doi.org/10.3390/en14123477.
Der volle Inhalt der QuelleMohanty, Kanungo Barada, Kishor Thakre, Aditi Chatterjee, Ashwini Kumar Nayak und Vinaya Sagar Kommukuri. „Reduction in components using modified topology for asymmetrical multilevel inverter“. World Journal of Engineering 16, Nr. 1 (11.02.2019): 71–77. http://dx.doi.org/10.1108/wje-01-2017-0010.
Der volle Inhalt der QuelleJasielski, Jacek, und Stanisław Kuta. „Applied methods of power supply and galvanic isolation of gate drivers of power transistors in bridging end stages of Class D amplifiers and inverters“. Science, Technology and Innovation 2, Nr. 1 (28.06.2018): 31–41. http://dx.doi.org/10.5604/01.3001.0012.1413.
Der volle Inhalt der QuellePathak, Medha, Lisa Kurtz, Francesco Tombola und Ehud Isacoff. „The Cooperative Voltage Sensor Motion that Gates a Potassium Channel“. Journal of General Physiology 125, Nr. 1 (28.12.2004): 57–69. http://dx.doi.org/10.1085/jgp.200409197.
Der volle Inhalt der QuellePeracchia, Camillo, und Lillian Mae Leverone Peracchia. „Calmodulin-Connexin Partnership in Gap Junction Channel Regulation-Calmodulin-Cork Gating Model“. International Journal of Molecular Sciences 22, Nr. 23 (02.12.2021): 13055. http://dx.doi.org/10.3390/ijms222313055.
Der volle Inhalt der QuellePetruhanov, Vadim N., und Alexander N. Pechen. „Quantum Control Landscapes for Generation of H and T Gates in an Open Qubit with Both Coherent and Environmental Drive“. Photonics 10, Nr. 11 (27.10.2023): 1200. http://dx.doi.org/10.3390/photonics10111200.
Der volle Inhalt der QuelleHui, S. Y., S. C. Tang und Henry Shu-Hung Chung. „Optimal operation of coreless PCB transformer-isolated gate drive circuits with wide switching frequency range“. IEEE Transactions on Power Electronics 14, Nr. 3 (Mai 1999): 506–14. http://dx.doi.org/10.1109/63.761694.
Der volle Inhalt der QuellePeracchia, C., und S. J. Girsch. „Functional modulation of cell coupling: evidence for a calmodulin-driven channel gate“. American Journal of Physiology-Heart and Circulatory Physiology 248, Nr. 6 (01.06.1985): H765—H782. http://dx.doi.org/10.1152/ajpheart.1985.248.6.h765.
Der volle Inhalt der QuelleHu, Bo Xue, He Li, Zhuo Wei, Ya Feng Wang, Diang Xing, Ri Sha Na und Jin Wang. „An Auxiliary Power Supply for Gate Drive of Medium Voltage SiC Devices in High Voltage Applications“. Materials Science Forum 924 (Juni 2018): 836–40. http://dx.doi.org/10.4028/www.scientific.net/msf.924.836.
Der volle Inhalt der QuelleSpro, Ole Christian, Pierre Lefranc, Sanghyeon Park, Juan M. Rivas-Davila, Dimosthenis Peftitsis, Ole-Morten Midtgard und Tore Undeland. „Optimized Design of Multi-MHz Frequency Isolated Auxiliary Power Supply for Gate Drivers in Medium-Voltage Converters“. IEEE Transactions on Power Electronics 35, Nr. 9 (September 2020): 9494–509. http://dx.doi.org/10.1109/tpel.2020.2972977.
Der volle Inhalt der QuelleUSLU-OZKUCUK, Gonca. „TRIAC Based Isolated AC Load Drive Equivalent Circuit Design of Solid-State Relay“. Eurasia Proceedings of Science Technology Engineering and Mathematics 26 (30.12.2023): 183–89. http://dx.doi.org/10.55549/epstem.1409469.
Der volle Inhalt der QuelleHernández-García, C., T. Popmintchev, M. M. Murnane, H. C. Kapteyn, L. Plaja, A. Becker und A. Jaron-Becker. „Isolated broadband attosecond pulse generation with near- and mid-infrared driver pulses via time-gated phase matching“. Optics Express 25, Nr. 10 (11.05.2017): 11855. http://dx.doi.org/10.1364/oe.25.011855.
Der volle Inhalt der QuelleChoudhury, Subhashree, Mohit Bajaj, Taraprasanna Dash, Salah Kamel und Francisco Jurado. „Multilevel Inverter: A Survey on Classical and Advanced Topologies, Control Schemes, Applications to Power System and Future Prospects“. Energies 14, Nr. 18 (13.09.2021): 5773. http://dx.doi.org/10.3390/en14185773.
Der volle Inhalt der QuelleDíaz-Martín, Cristian, Eladio Durán, Salvador P. Litrán, José Luis Álvarez und Jorge Semião. „Single-Switch Non-Isolated Resonant DC-DC Converter for Single-Input Dual-Output Applications“. Applied Sciences 13, Nr. 15 (30.07.2023): 8798. http://dx.doi.org/10.3390/app13158798.
Der volle Inhalt der QuelleHitzemann, Moritz, Martin Lippmann, Jonas Trachte, Alexander Nitschke, Olaf Burckhardt und Stefan Zimmermann. „Wireless Low-Power Transfer for Galvanically Isolated High-Voltage Applications“. Electronics 11, Nr. 6 (16.03.2022): 923. http://dx.doi.org/10.3390/electronics11060923.
Der volle Inhalt der QuelleBhattacharya, Shilpi, Prabal Deb, Sujit K. Biswas und Ambarnath Banerjee. „Open-Delta VSC Based Voltage Controller in Isolated Power Systems“. International Journal of Power Electronics and Drive Systems (IJPEDS) 6, Nr. 2 (01.06.2015): 376. http://dx.doi.org/10.11591/ijpeds.v6.i2.pp376-386.
Der volle Inhalt der QuelleLi, Meiye, Meiying Li, Xiaoxia Hu und Ge Li. „Research on Anomie Behavior of Drivers on Non-physical Isolated Urban Road Based on Game Theory“. MATEC Web of Conferences 259 (2019): 03004. http://dx.doi.org/10.1051/matecconf/201925903004.
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