Auswahl der wissenschaftlichen Literatur zum Thema „IR optoelectronic mixer“

Molecular packing patterns are crucial factors determining electron/energy transfer processes that are critical for the optoelectronic properties of organic thin film devices. Herein, the polarization-selective ultraviolet/infrared (UV/IR) mixed frequency ultrafast spectroscopy is applied to investigate the relative molecular orientations in two organic thin films of 7-(diethylamino)coumarin-3-carboxylic acid (DEAC) and perylene. The signal anisotropy changes caused by intermolecular energy/electron transfers are utilized to calculate the cross angles between the electronic transition dipole moment of the donor and the vibrational transition dipole moments of the acceptor, yielding the relative orientation between two adjacent molecules. Using this method, the relative orientation angle in DEAC film is determined to be 53.4°, close to 60° of its single crystalline structure, and that of the perylene film is determined to be 6.2°, also close to −0.2° of its single crystalline structure. Besides experimental uncertainties, the small difference between the angles determined by this method and those of single crystals also results from the fact that the thin film samples are polycrystalline where some of the molecules are amorphous.

Zinc oxide has been used for many applications, for example optoelectronic devices, ceramics, catalysts, pigments, varistors and many other important applications. In this study, ZnO nanoparticles were synthesized by mixture of fuel approach in solution chemical combustion method. Mixtures of Urea and Zinc salts were mixed at room temperature resulting in spontaneous ignition because these are hypergolic materials resulting in production of ZnO nanopowder. The crystal structure and size of the synthesized powder were determined by X- ray diffractometer (XRD), which revealed that the synthesized ZnO nanopowder has the pure wurtzite structure having average crystallite size of 30nm. Morphological studies were carried out by scanning electron microscopy (SEM), Energy Dispersive X-ray analysis (EDAX) was carried out by Scanning electron microscopy (SEM) with energy dispersive X-ray spectroscopy (EDAX), Optical studies were examined by FT-IR and UV-Visible absorption spectrum and the particle size was estimated from Nanoparticle size analyzer.

This article presents a framework for planning a drone swarm mission in a hostile environment. Elements of the planning framework are discussed in detail, including methods of planning routes for drone swarms using mixed integer linear programming (MILP) and methods of detecting potentially dangerous objects using EO/IR camera images and synthetic aperture radar (SAR). Methods of detecting objects in the field are used in the mission planning process to re-plan the swarm’s flight paths. The route planning model is discussed using the example of drone formations managed by one UAV that communicates through another UAV with the ground control station (GCS). This article presents practical examples of using algorithms for detecting dangerous objects for re-planning of swarm routes. A novelty in the work is the development of these algorithms in such a way that they can be implemented on mobile computers used by UAVs and integrated with MILP tasks. The methods of detection and classification of objects in real time by UAVs equipped with SAR and EO/IR are presented. Different sensors require different methods to detect objects. In the case of infrared or optoelectronic sensors, a convolutional neural network is used. For SAR images, a rule-based system is applied. The experimental results confirm that the stream of images can be analyzed in real-time.

Inorganic halides perovskite CsPbX3 (X = Cl, Br, and I or mixed halide systems Cl/Br and Br/I) nanoparticles are efficient light-conversion objects that have attracted significant attention due to their broadband tunability over the entire visible spectral range of 410–700 nm and high quantum yield of up to 95%. Here, we demonstrate a new method of recrystallization of CsPbBr3 nanoparticles inside the electrospun fluoropolymer fibers. We have synthesized nonwoven tetrafluoroethylene mats embedding CsPbBr3 nanoparticles using inexpensive commercial precursors and syringe electrospinning equipment. The fabricated nonwoven mat samples demonstrated both down-conversion of UV light to 506 nm and up-conversion of IR femtosecond laser radiation to 513 nm green photoluminescence characterized by narrow emission line-widths of 35 nm. Nanoparticle formation inside nonwoven fibers was confirmed by TEM imaging and water stability tests controlled by fluorimetry measurements. The combination of enhanced optical properties of CsPbBr3 nanoparticles and mechanical stability and environmental robustness of highly deformable nonwoven fluoropolymer mats is appealing for flexible optoelectronic applications, while the industry-friendly fabrication method is attractive for commercial implementations.

Laser methods are successfully used to prepare complex functional nanomaterials, especially for biomedicine, optoelectronics, and heterogeneous catalysis. In this paper, we present complex oxide and composite nanomaterials based on Bi and Si produced using laser ablation in liquid followed by subsequent powder annealing. Two synthesis approaches were used, with and without laser post-treatment of mixed (in an atomic ratio of 2:1) laser-generated Bi and Si colloids. A range of methods were used to characterize the samples: UV-Vis diffusion reflection, IR and Raman spectroscopy, synchronous thermal analysis, X-ray diffraction, transmission electron microscopy, as well as specific surface-area evaluation. We also followed the dynamics of phase transformations, as well as composition, structure and morphology of annealed powders up to 800 °C. When heated, the non-irradiated series of samples proceeded from metallic bismuth, through β-Bi2O3, and resulted in bismuth silicates of various stoichiometries. At the same time, in their laser-irradiated counterparts, the formation of silicates proceeded immediately from the amorphous Bi2SiO5 phase formed after laser treatment of mixed Bi and Si colloids. Finally, we show their ability to decompose persistent organic molecules of Rhodamine B and phenol under irradiation with a soft UV (375 nm) source.

The synthesis of four mononuclear heptacoordinated organotin (IV) complexes of mixed ligands derived from tridentated Schiff bases and pyrazinecarboxylic acid is reported. This organotin (IV) complexes were prepared by using a multicomponent reaction, the reaction proceeds in moderate to good yields (64% to 82%). The complexes were characterized by UV-vis spectroscopy, IR spectroscopy, mass spectrometry, 1H, 13C, and 119Sn nuclear magnetic resonance (NMR) and elemental analysis. The spectroscopic analysis revealed that the tin atom is seven-coordinate in solution and that the carboxyl group acts as monodentate ligand. To determine the effect of the substituent on the optoelectronic properties of the organotin (IV) complexes, thin films were deposited, and the optical bandgap was obtained. A bandgap between 1.88 and 1.98 eV for the pellets and between 1.23 and 1.40 eV for the thin films was obtained. Later, different types of optoelectronic devices with architecture “contacts up/base down” were manufactured and analyzed to compare their electrical behavior. The design was intended to generate a composite based on the synthetized heptacoordinated organotin (IV) complexes embedded on the poly(3,4-ethylenedyoxithiophene)-poly(styrene sulfonate) (PEDOT:PSS). A Schottky curve at low voltages (<1.5 mV) and a current density variation of as much as ~3 × 10−5 A/cm2 at ~1.1 mV was observed. A generated photocurrent was of approximately 10−7 A and a photoconductivity between 4 × 10−9 and 7 × 10−9 S/cm for all the manufactured structures. The structural modifications on organotin (IV) complexes were focused on the electronic nature of the substituents and their ability to contribute to the electronic delocalization via the π system. The presence of the methyl group, a modest electron donor, or the non-substitution on the aromatic ring, has a reduced effect on the electronic properties of the molecule. However, a strong effect in the electronic properties of the material can be inferred from the presence of electron-withdrawing substituents like chlorine, able to reduce the gap energies.

Mixed glassy zirconium-tin phosphate, g-Zr0.64.Sn.0.36(HPO4)2.3H2O(g-ZrSnP), nano fibrous cerium phosphate, Ce(HPO4)2 2,9H2O(nCePf), and mixed glassy zirconium-tin phosphate / fibrous cerium phosphate nanocomposite membrane, [g-Zr0.64 Sn0.36 (HPO4)2]0.25 [Ce(HPO4)2]0.75 ..4.43H2O, were prepared and characterized. By chemical , x-ray diffraction (XRD), thermogravimetric analysis (TGA), and Fourier transform spectroscopy (FTIR), Zirconium tin mole ratio were estimated using (EDAX). Novel [g-Zr0.64 Sn0.36 (HPO4)2]0.25 [Ce(HPO4)2]0.75 / polycarbazole nanocomposite membrane was prepared via self-support polymerization of carbazole, which was promoted by the reduction of Ce(iv) phosphate present in the inorganic matrix. Possible explanation is nCePf present on the surface of the nanocomposite is attacked by carbazole, converted to cerium (III) orthophosphate(CePO4). The resultant polycarbazole was characterized by C,H,N analysis, SEM ,FT-IR. UV-Vis and electrical conductance measurements. From elemental (C,H,N) analysis, the amount of polycarbazole present in the composite found to be (2.15 % in wt.). Polycarbazole is considered as one of modern material used in solar cells, furthermore it has become an important material for optoelectronic applications in recent years. The dc conductivity of polycarbazole nanocomposite membrane at 280C (using RC-Circuit) found to be equal to 3x10-5 Scm-1, range of semi-conductors. We suggest self-doping occurred on polymerization, which is due to H+ present in (O3POH)2 groups of [g-Zr0.64 Sn0.36 (HPO4)2]0.25. The electrochemistry of resultant polycarbazole in acetonitrile solution for a range of concentrations from 1.06 x10-4 to 2.19 x 10–3 mol dm-3 was carried out using CV techniques. Investigation of its electrochemical properties affords insight into the mechanisms for their oxidation and reduction, therefore provides the basis for evaluating the stabilities of the material and for designing novel polycarbazole-derived materials with desired properties as well as new devices. That will be discussed.

ZnO nanoparticles have numerous applications as photo catalysts, gas sensors, UV lasers, as optoelectronic and microelectronic devices or in cosmetic field. ZnO nanoparticles were synthesized by solvent free method using zinc nitrate hexahydrate as precursor and glycerol as dispersant, without solvent present. This method proved to be very simple, economic and ecofriendly. Zinc nitrate and glycerol were mixed in different ratio in order to avoid and overcome a possibility of agglomeration. Characterization of samples was performed by UV/VIS and FTIR spectrophotometry. The strongest absorption appeared at wavelength 206 nm. Using combination of UV/VIS spectrophotometry and hyperbolic band model (HBM) particles size of ZnO particles were evaluated to 2.06 nm. Additionally, using Tauc plot, a band gap energy was determined. Band gap energy of ZnO nanoparticles amounted to 5.00 eV. IR spectrum showed existence of ZnO in interval 600- 400 cm-1.

Le PtSe₂ est un matériau 2D de la famille des dichalcogénures de métaux de transition (TMDs) qui présente des propriétés intrinsèques exceptionnelles : mobilité des porteurs de charge élevée (200 - 450 cm².(V.s)⁻¹), gap électronique ajustable en fonction du nombre de monocouches (MLs), absorption optique large bande et excellente stabilité à l'air. Ces propriétés sont idéales pour des applications (opto)électroniques. Cependant, la croissance de PtSe₂ de haute qualité cristalline sur un substrat à bas coût et isolant reste un enjeu majeur. Ici, la synthèse de PtSe₂ bicouche à multicouche (< 20 MLs) par épitaxie par jets moléculaires (MBE) est optimisée sur un substrat de saphir. Les caractérisations systématiques comprennent la diffraction électronique (RHEED), la spectroscopie Raman, la spectroscopie de rayons X à dispersion d'énergie (EDS) et des mesures électriques de conductivité. Pour les films épais de PtSe₂ semi-métallique, on démontre que des températures élevées de croissance (520 °C) et de recuit (690 °C), ainsi qu'un fort flux de sélénium (Ф(Se) = 0,5 Å.s⁻¹ ; Ф(Se)/Ф(Pt) ~ 170), permettent d'obtenir une haute qualité cristalline et une haute conductivité électrique. L'impact du recuit post-croissance sur les propriétés structurelles des films épais est particulièrement étudié par diffraction des rayons X (XRD) et microscopie électronique à transmission (STEM). Les films de PtSe₂ non recuits consistent en une distribution 3D de domaines superposés ayant différentes orientations dans le plan, tandis que les films recuits consistent en un réseau 2D de domaines monocristallins selon l'axe c. En d'autres termes, les films non recuits ont des domaines d'épaisseur plus faible que celle du film et sont constitués de phases semi-conductrices et semi-métalliques, entraînant une faible conductivité (0,5 mS). Au contraire, les films recuits sont composés uniquement de domaines quasi-monocristallins et semi-métalliques, et présentent une très haute conductivité, jusqu'à 1,6 mS. On montre également que l'indicateur de qualité cristalline couramment utilisé, qui est la largeur à mi-hauteur (FWHM) du pic Raman Eg, n'est valide que s'il est étudié conjointement avec la FWHM du pic Raman A1g. On démontre que plus la FWHM des pics Eg et A1g est faible, plus la qualité cristalline des films de PtSe₂ dans le plan et hors du plan, respectivement, est élevée, et plus la conductivité électrique augmente. Concernant les films bicouches de PtSe₂ semi-conducteur, on obtient des films de haute qualité cristalline, dont la FWHM des pics Eg et A1g est comparable à celle des cristaux exfoliés, en effectuant une synthèse avec un flux périodique de Pt (periodic supply epitaxy). Les films de PtSe₂ bicouches à multicouches ne sont pas monocristallins mais présentent une texture de fibre selon l'axe c, ce qui est typique sur un substrat de saphir. On démontre pour la première fois l'épitaxie d'un film épais de PtSe₂ sur des surfaces vicinales (marches) de saphir. Pour finir, nous avons fabriqué des dispositifs optoélectroniques fonctionnant à 1,55 µm, la longueur d'onde typique des télécommunications par fibre optique. Ils sont à base de PtSe₂ épais semi-métallique, présentant une haute conductivité électrique et une bonne absorption optique à 1,55 µm, qui est directement synthétisé sur un substrat de saphir 2 pouces. On montre des photodétecteurs à base de PtSe₂ avec une largeur de bande record de 60 GHz et le premier mélangeur optoélectronique à base d'un TMD présentant, de plus, une largeur de bande supérieure à 30 GHz
PtSe₂ is a 2D material from the transition metal dichalcogenide (TMD) family that exhibits outstanding intrinsic properties: high charge carrier mobility (200 - 450 cm².(V.s)⁻¹), tunable bandgap with the number of monolayers (MLs), broadband optical absorption and excellent air stability. These properties are ideally suited for (opto)electronic applications. However, the growth of high crystalline quality PtSe₂ on low-cost and insulating substrates remains a major challenge. Here, the synthesis of bilayer to multilayer PtSe₂ films (< 20 MLs) by molecular beam epitaxy (MBE) is optimized on a sapphire substrate. The systematic characterizations include electron diffraction (RHEED), Raman spectroscopy, energy dispersive X-ray spectroscopy (EDX) and electrical conductivity measurements. For thick semimetallic PtSe₂ films, we demonstrate that high growth (520°C) and annealing (690°C) temperatures, combined with a high selenium flux (Ф(Se) = 0.5 Å.s⁻¹; Ф(Se)/Ф(Pt) ~ 170), leads to high crystalline quality and high electrical conductivity. In particular, the effect of the post-growth annealing on the structural properties of the thick films is investigated using X-ray diffraction (XRD) and transmission electron microscopy (STEM). We show that non-annealed PtSe₂ films consist of a 3D random distribution of superimposed domains with different in-plane orientations, while the annealed films consist of a 2D network of single-crystalline domains along the c-axis. In other words, non-annealed films have domains with a thickness smaller than that of the film and are composed of both semiconducting and semimetallic phases, resulting in low electrical conductivity (0.5 mS). In contrast, the annealed films are composed solely of quasi-single-crystalline and semimetallic domains, and exhibit high conductivity, up to 1.6 mS. We also show that the commonly used crystalline quality indicator, which is the full width at half maximum (FWHM) of the Eg Raman peak, becomes a reliable metric only when it is studied in conjunction with the FWHM of the A1g Raman peak. We demonstrate that the lower the FWHM of both the Eg and A1g peaks, the higher the crystalline quality of the in-plane and out-of-plane PtSe₂ films, respectively, and the higher the electrical conductivity. For semiconducting PtSe₂ bilayer films, high crystalline quality films with Eg and A1g FWHM values comparable to those of exfoliated crystals are obtained using a periodic Pt flux (periodic supply epitaxy). The bilayer to multilayer PtSe₂ films are not monocrystalline but present a fiber texture along the c-axis, which is typical on a sapphire substrate. The epitaxy of a thick PtSe₂ film on vicinal sapphire surfaces (steps) is demonstrated for the first time. Finally, we fabricated optoelectronic devices operating at 1.55 µm, the typical wavelength of optical fiber telecommunications. They are based on thick semi-metallic PtSe₂, exhibiting high electrical conductivity and good optical absorption at 1.55 µm, which is directly synthesized on a 2-inch sapphire substrate. We demonstrate PtSe₂-based photodetectors with a record bandwidth of 60 GHz and the first TMD-based optoelectronic mixer with, in addition, a bandwidth larger than 30 GHz