Thematische Bibliographien / Ion bombardment

Inhaltsverzeichnis

  1. Zeitschriftenartikel
  2. Dissertationen
  3. Bücher
  4. Buchteile
  5. Konferenzberichte
  6. Berichte der Organisationen

Auswahl der wissenschaftlichen Literatur zum Thema „Ion bombardment“

Autor: Grafiati
Veröffentlicht am 4. Juni 2021
Zuletzt aktualisiert am 29. Juli 2024

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Zeitschriftenartikel zum Thema "Ion bombardment"

1

Lu, Rui, Guangliang Hu, Wanli Zhao, Tongyu Liu, Jiangqi Fan, Chunrui Ma, Lu Lu, Linyue Liu und Ming Liu. „Effects of He-ion bombardment on the ferroelectric and dielectric properties of BaHf0.17Ti0.83O3 films“. Applied Physics Letters 121, Nr. 7 (15.08.2022): 072901. http://dx.doi.org/10.1063/5.0107438.

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Focused helium ion bombardment provides an effective means to modify the properties of ferroelectric materials. This work systematically investigates the effect of helium ion bombardment on the structural, ferroelectric, and dielectric properties of relaxor BaHf0.17Ti0.83O3 thin films at different bombardment doses in the range of 1 × 1012 to 7 × 1015 ions/cm2. The films show more defects and slightly expanded out-of-plane lattice parameters with an increase in dose. Despite helium ion bombardment introducing more defects and structural disorder in the system, the bombardment-induced dipole polarization leads to enhanced ferroelectricity. Our findings highlight energetic helium ion bombardment as an effective way to enhance the ferroelectricity of relaxor materials.
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Choi, Seung Kyu, Jae Min Jang und Woo Gwang Jung. „Influence of Ion Bombardment of Sapphire on Electrical Property of GaN Layer“. Solid State Phenomena 124-126 (Juni 2007): 615–18. http://dx.doi.org/10.4028/www.scientific.net/ssp.124-126.615.

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Ion beam bombardment of proton, He+, Ar+, Xe+ ions were made on single crystal substrate by cyclotron. The GaN epi-layer material was grown by MOCVD on ion beam bombarded substrate. After deposition of GaN epi-layer heat treatment was made in flow of N2. The RMS roughness of the substrate was increased by ion bombardment. The GaN crystal quality for substrates of ion bombardment was better than that for bare substrates. Raman spectrum analysis indicated the induced stress in the GaN epi-layer during the heat treatment. The electrical property of GaN was improved after heat treatment. It is estimated that ion bombardment of proton with current of 1μA is the optimum condition in our experimental condition.
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Wang, Airu, Osamu Ohashi und N. Yamaguchi. „Effect of Argon Ion Bombardment on Diffusion Bonded Joint of Various Metals“. Materials Science Forum 449-452 (März 2004): 901–4. http://dx.doi.org/10.4028/www.scientific.net/msf.449-452.901.

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Specimens of aluminum (Al), austenitic stainless steel (SUS304L), pure iron (Fe) and Oxygen-free high conductivity copper (Cu) were treated by argon ion bombardment, and then were bonded by diffusion bonding method. The effects of argon ion bombardment on diffusion-bonded joints of four kinds of metallic materials were compared from the tensile strength at real bonded area and the fractographs. The results showed that bonding temperature was lowered by argon ion bombardment treatment for four kinds of materials. The effect of argon ion bombardment on diffusion-bonded joint depended strongly on the chemistry of the surface to be bonded, and increased in Al, SUS304L, Fe, and Cu in turn.
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Gholami, Nasim, Babak Jaleh, Reza Golbedaghi, Majid Mojtahedzadeh Larijani, Pikul Wanichapichart, Mahmoud Nasrollahzadeh und Rajender S. Varma. „Modification of Chitosan Membranes via Methane Ion Beam“. Molecules 25, Nr. 10 (13.05.2020): 2292. http://dx.doi.org/10.3390/molecules25102292.

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Chitosan has been used for biomedical applications in recent years, primarily because of its biocompatibility. A chitosan membrane with a 30 μm thickness was prepared and investigated for its surface modification using methane ions. Methane ions were implanted into the chitosan membrane using a Kaufman ion source; bombardment was accomplished using three accelerating voltages of ion beams—30, 55, and 80 kV. The influence of the ion bombardment on morphology, crystallinity, and hydrophilicity was investigated. Attenuated total reflectance Fourier-transform infrared (ATR-FTIR) spectroscopy analysis showed that a triplet bond appeared after the implantation of methane ions (acceleration voltage: 80 kV), culminating in the creation of a more amorphous membrane structure. The analyses of atomic force microscopy (AFM) images showed that, with the increase in bombardment energy, the roughness of the surface changed. These results revealed that ion bombardment improved the hydrophilicity of the membranes and the water fluxes of chitosan membranes altered after methane ion bombardment.
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Yamashita, Mutsuo. „Metal ion production by ion bombardment“. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 14, Nr. 5 (September 1996): 2795–801. http://dx.doi.org/10.1116/1.580202.

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Hobday, Steven, Roger Smith, Ursula Gibson und Asta Richter. „Ion bombardment of C60films“. Radiation Effects and Defects in Solids 142, Nr. 1-4 (Juni 1997): 301–18. http://dx.doi.org/10.1080/10420159708211615.

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Wehner, G. K. „SPUTTERING BY ION BOMBARDMENT“. Annals of the New York Academy of Sciences 101, Nr. 3 (22.12.2006): 803–4. http://dx.doi.org/10.1111/j.1749-6632.1963.tb54935.x.

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Beardmore, Keith, und Roger Smith. „Ion bombardment of polyethylene“. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 102, Nr. 1-4 (August 1995): 223–27. http://dx.doi.org/10.1016/0168-583x(95)80145-c.

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Howe, L. M., D. P. McCooeye, M. H. Rainville, J. D. Bonnett und D. Phillips. „Ion bombardment of Zr3Fe“. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 59-60 (Juli 1991): 884–88. http://dx.doi.org/10.1016/0168-583x(91)95725-s.

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Kim, Sang-Pil, Huck Beng Chew, Eric Chason, Vivek B. Shenoy und Kyung-Suk Kim. „Nanoscale mechanisms of surface stress and morphology evolution in FCC metals under noble-gas ion bombardments“. Proceedings of the Royal Society A: Mathematical, Physical and Engineering Sciences 468, Nr. 2145 (23.05.2012): 2550–73. http://dx.doi.org/10.1098/rspa.2012.0042.

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Here, we uncover three new nanoplasticity mechanisms, operating in highly stressed interstitial-rich regions in face-centred-cubic (FCC) metals, which are particularly important in understanding evolution of surface stress and morphology of a FCC metal under low-energy noble-gas ion bombardments. The first mechanism is the configurational motion of self-interstitials in subsonic scattering during ion bombardments. We have derived a stability criterion of self-interstitial scattering during ion embedding, which consistently predicts the possibility of vacancy- and interstitial-rich double-layer formation for various ion bombardments. The second mechanism is the growth by gliding of prismatic dislocation loops (PDLs) in a highly stressed interstitial-rich zone. This mechanism allows certain prismatic dislocations with their Burgers vectors parallel to the surface to grow in subway-glide mode (SGM) during ion bombardment. The SGM growth creates a large population of nanometre-sized prismatic dislocations beneath the surface. The third mechanism is the Burgers vector switching of a PDL that leads to unstable eruption of adatom islands during certain ion bombardments of FCC metals. We have also derived the driving force and kinetics for the growth by gliding of prismatic dislocations in an interstitial-rich environment as well as the criterion for Burgers vector switching, which consistently clarifies previously unexplainable experimental observations.
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Dissertationen zum Thema "Ion bombardment"

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McLaren, M. G. „Ion bombardment induced deposition of tungsten“. Thesis, University of Salford, 1996. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.308526.

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Samartsev, Andrey V. „Sputtering of Indium under polyatomic ion bombardment“. [S.l. : s.n.], 2004. http://deposit.ddb.de/cgi-bin/dokserv?idn=976510278.

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Whitlow, Harry James. „Ion-materials interactions and their application“. Thesis, University of Bath, 1998. https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.285272.

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Kucheyev, Sergei Olegovich. „Ion-beam processes in group-III nitrides“. View thesis entry in Australian Digital Theses Program, 2002. http://thesis.anu.edu.au/public/adt-ANU20030211.170915/index.html.

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Locklear, Jay Edward. „Secondary ion emission under keV carbon cluster bombardment“. Diss., Texas A&M University, 2006. http://hdl.handle.net/1969.1/4273.

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Secondary ion mass spectrometry (SIMS) is a surface analysis technique capable of providing isotopic and molecular information. SIMS uses keV projectiles to impinge upon a sample resulting in secondary ion emission from nanometric dimensions. It is well documented that secondary ion emission is enhanced using cluster projectiles compared to atomic projectiles. Previous studies of enhanced secondary ion yields with cluster projectiles have led to the present study dealing with the scope of C60 as a projectile for SIMS. The secondary ion yields (i.e., the number of secondary ions detected per projectile impact) from impacts of 10-26 keV C24H12+, C60+, gramicidin S+ and C60F40+ projectiles were examined to compare the effectiveness of the projectiles. The [M-H]- secondary ion yields from several organic samples varied inversely with the molecular weight. Multiple ion emission decreases monotonically as a function of the number of secondary ions emitted per impact and varies with impact energy such that higher energies produce more multiple ion emission. The emission of CN- from biological samples as a function of carbon-based projectile characteristics was examined to explore the possibility of using CN- as a molecular identifier. CN- emission was found to be the product of both direct and recombination/rearrangement emission. Re-emitted projectile atoms in the form F- were found under C60F40+ bombardment. Two forms of re-emitted F- were found: One form in which F atoms retained a portion of the initial kinetic energy, and a second in which the F atoms deposited most of the initial kinetic energy into the surface before being ejected. The [M-H]- secondary ion yield of gramicidin S was increased ~ 15 times by embedding the analyte in a matrix of sinapic acid. These results show the optimum carbon based projectile for a given sample is dependent upon the signal to be monitored from the surface. The results also show CN- has potential as a molecular identifier. Additionally, the detection of re-emitted F- confirms prior predictions of re-emitted projectile atoms.
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Zeroual, Boudjemaa. „Ion bombardment induced damage and annealing in Si“. Thesis, University of Salford, 1990. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.258251.

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Yin, Jian. „Mechanism studies of fast atom bombardment mass spectrometry“. Thesis, Georgia Institute of Technology, 1993. http://hdl.handle.net/1853/25987.

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Alzaim, Safa. „Studies of nanostructure fabrication and morphology development during ion bombardment as a function of bombardment angle“. Thesis, Boston University, 2008. https://hdl.handle.net/2144/27575.

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Thesis (B.A.)--Boston University. University Professors Program Senior theses.
PLEASE NOTE: Boston University Libraries did not receive an Authorization To Manage form for this thesis. It is therefore not openly accessible, though it may be available by request. If you are the author or principal advisor of this work and would like to request open access for it, please contact us at open-help@bu.edu. Thank you.
In order to investigate the behavior of nanostructures during the widely-used process of ion bombardment, the mechanisms of ion bombardment on nanostructures were studied. Nanostructures were fabricated into silicon wafers. The fabrication process involved writing with scanning electron microscopy (SEM) a pattern in poly(methyl methacrylate) (PMMA) polymer resist layered over the silicon, removing the written PMMA in development with methyl isobutyl ketone (MIBK) and isopropanol, layering the wafer with chromium in thermal evaporation, removing the PMMA and its chromium covering with acetone, etching the chromium of the pattern with reactive ion etching, and finally removing the chromium with an etching reagent. The final structures were ion bombarded under 3*10^-3 torr for three hours at 1000 V and 40mA, with Argon; the bombarding was performed at degree angles of 60 and normal incidence. A sample without the fabrication of structures is bombarded at normal incidence as well. One sample with fabricated structures is studied without bombardment as an experimental control. The results were erosion of the bombarded structures, cones and dots.
2031-01-02
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Zabeida, Oleg Vasilyevich. „Study of ion bombardment characteristics in high frequency plasmas“. Thesis, National Library of Canada = Bibliothèque nationale du Canada, 2000. http://www.collectionscanada.ca/obj/s4/f2/dsk2/ftp03/NQ53549.pdf.

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SAXE, STEVEN GARY. „ION-INDUCED PROCESSES IN OPTICAL COATINGS (BOMBARDMENT, THIN FILMS)“. Diss., The University of Arizona, 1985. http://hdl.handle.net/10150/188076.

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Nearly all the deficiencies of conventional vacuum evaporated coatings trace to a single physical property of condensed films: low packing density. One way to increase packing density is to bombard the growing film with ions during deposition, called ion-assisted deposition (IAD). The beginning chapters of this dissertation analyze IAD as a perturbation of the conventional vacuum evaporation process. The experimental chapters begin with an examination of the effect on moisture penetration behavior of oxygen-ion bombarding completed optical filters. Moisture adsorption and desorption is retarded after bombardment in filters composed of titania and silica, but not in those of zirconia and silica. Bombardment evidently induces a crystalline-to-amorphous transition in titania, causing the surface to swell and occluding the pores. The transition in zirconia is the reverse, and no impediment to moisture appears. Argon-ion-assisted magnesium fluoride (MgF₂) can show ultraviolet (UV) absorption. The primary mechanism is probably the formation of F-centers (single fluorine-ion vacancies), although an unsaturated oxygen bond may also be responsible. Absorption can be removed by baking and often by irradiation with UV. After baking, fluorine is lost and replaced by oxygen. Absorption-free MgF₂ films can be deposited by minimizing the substrate temperature and bombardment flux. Ion-assisted films contain up to 2% argon and up to 170 parts-per-million of tungsten from the ion gun filaments. They show a slightly higher refractive index, are much less porous, and are much more resistant to damage by abrasion and exposure to fluorine gas. Ion-assisted aluminum oxide (alumina, Al₂O₃) films show a small increase in UV absorption after argon-ion bombardment; however, a mixture of argon and oxygen ions avoids the problem. Excess oxygen is often incorporated into alumina films, and depresses both the mass density and the refractive index. IAD increases refractive index and decreases porosity. Ion-assisted alumina films are somewhat more stable in humid environments. Ion-assisted deposition has been shown by this study to cause substantial improvements in many of the physical and some of the optical and chemical properties of evaporated magnesium fluoride and aluminum oxide films.
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Bücher zum Thema "Ion bombardment"

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Manenschijn, Albert. Ion bombardment and ion-assisted etching in rf discharges. Delft, Netherlands: Technische Universiteit Delft, 1991.

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F, Ziegler J., Hrsg. Handbook of ion implantation technology. Amsterdam: North-Holland, 1992.

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Anuntalabhochai, S. Ion beam bioengineering research. New York: Nova Science Publisher's, 2011.

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Forrester, A. Theodore. Large ion beams: Fundamentals of generation and propagation. New York: Wiley, 1988.

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Zeroual, Boudjemaa. Ion bombardment induced damage and annealing in Si. Salford: University of Salford, 1990.

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United States. National Aeronautics and Space Administration., Hrsg. One dimensional heavy ion beam transport: Energy independent model. [Washington, D.C: National Aeronautics and Space Administration], 1990.

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Prewett, P. D. Focused ion beams from liquid metal ion sources. Taunton, Somerset, England: Research Studies Press, 1991.

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Orloff, Jon. High resolution focused ion beams: FIB and its applications ; the physics of liquid metal ion sources and ion optics and their application to focused ion beam technology. New York, NY: Kluwer Academic/Plenum Publishers, 2003.

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Orloff, Jon. High Resolution Focused Ion Beams: FIB and its Applications: The Physics of Liquid Metal Ion Sources and Ion Optics and Their Application to Focused Ion Beam Technology. Boston, MA: Springer US, 2003.

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1934-, Swanson Lynwood, und Utlaut Mark William 1949-, Hrsg. High resolution focused ion beams: FIB and its applications : the physics of liquid metal ion sources and ion optics and their application to focused ion beam technology. New York: Kluwer Academic/Plenum Publishers, 2003.

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Buchteile zum Thema "Ion bombardment"

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Yates, John T. „Alternate Ion Bombardment Sources“. In Experimental Innovations in Surface Science, 310–13. New York, NY: Springer New York, 1998. http://dx.doi.org/10.1007/978-1-4612-2304-7_95.

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Strazzulla, G. „Ion Bombardment: Techniques, Materials and Applications“. In Experiments on Cosmic Dust Analogues, 103–13. Dordrecht: Springer Netherlands, 1988. http://dx.doi.org/10.1007/978-94-009-3033-9_8.

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Roth, J. „Physical Sputtering of Solids at Ion Bombardment“. In Physics of Plasma-Wall Interactions in Controlled Fusion, 351–88. Boston, MA: Springer US, 1986. http://dx.doi.org/10.1007/978-1-4757-0067-1_8.

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Smirnov, A. B., und R. K. Savkina. „Nanostructuring Surfaces of HgCdTe by Ion Bombardment“. In Springer Proceedings in Physics, 405–16. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-56422-7_30.

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Cooks, R. G., B. H. Hsu, W. B. Emary und W. K. Fife. „Surface Organic Reactions Induced by Ion Bombardment“. In Springer Proceedings in Physics, 28–33. Berlin, Heidelberg: Springer Berlin Heidelberg, 1986. http://dx.doi.org/10.1007/978-3-642-82718-1_6.

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Rauschenbach, Bernd. „Low-Energy Ion Beam Bombardment-Induced Nanostructures“. In Low-Energy Ion Irradiation of Materials, 305–405. Cham: Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-030-97277-6_8.

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Rauschenbach, Bernd. „Evolution of Topography Under Low-Energy Ion Bombardment“. In Low-Energy Ion Irradiation of Materials, 177–263. Cham: Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-030-97277-6_6.

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Miglierini, Marcel, Adriana Lančok und Márius Pavlovič. „Ion bombardment of Fe-based amorphous metallic alloys“. In ISIAME 2008, 45–52. Berlin, Heidelberg: Springer Berlin Heidelberg, 2009. http://dx.doi.org/10.1007/978-3-642-01370-6_6.

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Klaumünzer, S. L. „Plastic Flow of Amorphous Materials During Ion Bombardment“. In Multiscale Phenomena in Plasticity: From Experiments to Phenomenology, Modelling and Materials Engineering, 441–50. Dordrecht: Springer Netherlands, 2000. http://dx.doi.org/10.1007/978-94-011-4048-5_34.

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Kuznetsov, G. D. „Crystallization from the Gas Phase under Ion Bombardment“. In Growth of Crystals, 23–40. Boston, MA: Springer US, 1988. http://dx.doi.org/10.1007/978-1-4615-7125-4_3.

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Konferenzberichte zum Thema "Ion bombardment"

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Pozdeyev, E., D. Kayran, V. N. Litvinenko, Donald G. Crabb, Yelena Prok, Matt Poelker, Simonetta Liuti, Donal B. Day und Xiaochao Zheng. „Ion bombardment in RF guns“. In SPIN PHYSICS: 18th International Spin Physics Symposium. AIP, 2009. http://dx.doi.org/10.1063/1.3215603.

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Walkup, R. E., Ph Avouris und A. P. Ghosh. „Excited-Atom Production by Electron Bombardment of Alkali-Halides“. In Microphysics of Surfaces, Beams, and Adsorbates. Washington, D.C.: Optica Publishing Group, 1987. http://dx.doi.org/10.1364/msba.1987.mc4.

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Bombardment of solids by energetic beams of electrons, photons, or ions is generally accompanied by the ejection of particles from the surface. The ejected particles include ground-state neutral atoms and molecules, electronically excited atoms, and ionic species. We have performed a variety of experiments on the bombardment of alkali-halides by electron and ion beams. These experiments suggest a new mechanism for the formation of excited atoms and positive ions due to electron bombardment of alkali-halides. Additional measurements provide an interesting contrast between excited atom production by the bombardment of alkali-halides with ion vs. electron beams.
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Lehan, J. P., J. D. Targove, B. G. Bovard, M. J. Messerly und C. C. Weng. „Intermittent ion bombardment of optical thin films“. In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1986. http://dx.doi.org/10.1364/oam.1986.mq4.

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The practical problems of using ion-assisted deposition with substrate rotation are discussed, including the role of ion energy vs total ion flux. We compare MgF2, ZrO2, and SiO2 films made conventionally and with intermittent ion bombardment in terms of optical performance and stoichiometry. Vacuum-to-air shifts of the peak wavelength are significantly reduced in narrowband filters of ZrO2/SiO2. Also discussed is the relation between which layers are bombarded and peak wavelength shift; i.e., does the entire filter need to be bombarded or just a few critical layers? We also investigated stress reduction in MgF2 films.
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Wakamatsu, Yoshinobu, Hideaki Yamada, Satoshi Ninomiya, Brian N. Jones, Toshio Seki, Takaaki Aoki, Roger Webb et al. „Biomolecular Emission by Swift Heavy Ion Bombardment“. In ION IMPLANTATION TECHNOLOGY 2101: 18th International Conference on Ion Implantation Technology IIT 2010. AIP, 2011. http://dx.doi.org/10.1063/1.3548357.

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Sanabia, Jason E. „Highly Charged Ion Bombardment of Silicon Surfaces“. In APPLICATION OF ACCELERATORS IN RESEARCH AND INDUSTRY: 17TH International Conference on the Application of Accelerators in Research and Industry. AIP, 2003. http://dx.doi.org/10.1063/1.1619781.

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MATOSSIAN, J., und J. BEATTIE. „Plasma properties in electron-bombardment ion thrusters“. In 19th International Electric Propulsion Conference. Reston, Virigina: American Institute of Aeronautics and Astronautics, 1987. http://dx.doi.org/10.2514/6.1987-1076.

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Menezes, P. V., J. Martin, M. Schafer und K. M. Weitzel. „Bombardment induced ion transport through an ion-conducting Ca30 glass“. In 2011 IEEE 14th International Symposium on Electrets ISE 14. IEEE, 2011. http://dx.doi.org/10.1109/ise.2011.6084970.

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McNally, J. J., G. A. Al-Jumaily und J. R. McNeil. „Ion-beam-assisted deposition of metal oxide optical thin films“. In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1985. http://dx.doi.org/10.1364/oam.1985.fl5.

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The properties of dielectric (Al2O3, Ta2O5, HfO2, and TiO2) films deposited using ion beam assisted deposition (IAD) have been examined. Previously1 we have described the importance of oxygen-ion energy and flux in applying IAD to dielectric materials and examined some of the properties of TiO2 and SiO2 films. In this work we present results illustrating ion bombardment effects on the thin film properties of Al2O3, Ta2O5, and HfO2; in particular, film stoichiometry is strongly dependent on the ion beam flux and energy, a reduction in optical scatter is observed, and higher values of refractive index are obtained for films deposited with simultaneous O 2 + bombardment. Also, in certain cases, Raman spectroscopy indicates a crystalline phase change is induced by the O2 bombardment of samples during film deposition.
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M. S., Khristodorov, Strunin V. I., Baranova L. V. und Chirikov N. A. „REDUCING THE ROUGHNESS OF THIN ALUMINUM FILMS BY ION BOMBARDMENT“. In Mechanical Science and Technology Update. Omsk State Technical University, 2022. http://dx.doi.org/10.25206/978-5-8149-3453-6-2022-136-141.

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The results of an experiment on reducing the roughness of thin films of aluminum (Al) obtained by magnetron sputtering are presented. The paper presents a method for reducing the roughness by bombarding aluminum films with a directed beam of argon ions. Surface roughness was measured by atomic force microscopy (AFM). It is shown that ion bombardment leads to a decrease in the surface roughness of Al films.
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Varnier, F., C. Boulesteix, J. D. Targove, L. J. Lingg, B. G. Bovard und H. Angus Macleod. „Influence of ion-assisted deposition on structure and surface roughness of aluminum oxide“. In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1987. http://dx.doi.org/10.1364/oam.1987.ths5.

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Two techniques of transmission microscopy were used to examine films of aluminum oxide made by ion-assisted deposition with a Kaufman hot cathode ion gun. The films were bombarded during their growth by oxygen ions of 500-eV energy at an ion current density of 100 μA/cm2. Substrate temperatures were nominally 100°C. The films were grown in the same pumpdown cycle with and without bombardment. The surfaces of shadowed replicas of the films were examined by a technique involving the microdensitometry of micrographs,1 and statistical parameters were derived. With ion bombardment, there appeared to be a reduction in the incidence of large nodular features but a slight increase in very fine roughness. Direct micrographs were obtained by first depositing films over carbon and then stripping them; they showed that the films were completely amorphous.
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Berichte der Organisationen zum Thema "Ion bombardment"

1

Pozdeyev, E., D. Kayran und V. Litvinenko. Cathode Ion Bombardment in RF Photoguns. Office of Scientific and Technical Information (OSTI), September 2008. http://dx.doi.org/10.2172/939989.

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2

Pozdeyev E., D. Kayran und V. Litvinenko. Cathode Ion Bombardment in RF Photoguns. Office of Scientific and Technical Information (OSTI), September 2008. http://dx.doi.org/10.2172/1061912.

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3

Eklund, Elliott A., R. Bruinsma, J. Rudnick und R. S. Williams. Submicron-Scale Surface Roughening Induced by Ion Bombardment. Fort Belvoir, VA: Defense Technical Information Center, Februar 1991. http://dx.doi.org/10.21236/ada232151.

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4

Kiv, A. E., T. I. Maximova und V. N. Soloviov. MD Simulation of the Ion-Stimulated Relaxation in Silicon Surface Layers. [б. в.], Juni 2000. http://dx.doi.org/10.31812/0564/1278.

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Thus it was established that ion bombardment of silicon surface in the energy region of the threshold of elastic displacement of atoms might allow to improve structural characteristics of surface lavers and to decrease the relaxation time. Energy dependencies of radiation induced processes show a possibility to improve the real staicture of Silicon surface and to accelerate the long-term surface relaxation in microelectronic technology.
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5

Ila, Daryush, E. K. Williams, R. L. Zimmerman, P. R. Ashley und D. B. Poker. Fabrication of Optical Channel Waveguides in the GaAs/AlGaAs System by MeV Ion Beam Bombardment. Fort Belvoir, VA: Defense Technical Information Center, Februar 2000. http://dx.doi.org/10.21236/ada379168.

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6

Topper, James L., Binyamin Rubin, Cody C. Farnell und Azer P. Yalin. Preliminary Results of Low Energy Sputter Yields of Boron Nitride due to Xenon Ion Bombardment (Preprint). Fort Belvoir, VA: Defense Technical Information Center, Juli 2008. http://dx.doi.org/10.21236/ada484455.

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7

Nikzad, S., W. F. Calaway, M. J. Pellin, C. E. Young, D. M. Gruen und T. A. Tombrello. Formation mechanism and yield of molecules ejected from ZnS, CdS, and FeS{sub 2} during ion bombardment. Office of Scientific and Technical Information (OSTI), März 1994. http://dx.doi.org/10.2172/10134182.

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8

Manley, Michael. Creation of graphite surface defects via ion bombardment: The origin of active portals and their role in encapsulation of metal nanoparticles. Office of Scientific and Technical Information (OSTI), Mai 2020. http://dx.doi.org/10.2172/1711426.

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9

Burnett, J. W., M. J. Pellin, J. E. Whitten, D. M. Gruen und J. T. Jr Yates. Ion dose dependence of the sputtering yield: Ar{sup +}, Ne{sup +}, and Xe{sup +} bombardment of Ru(0001) and Al(111). Office of Scientific and Technical Information (OSTI), April 1994. http://dx.doi.org/10.2172/10141730.

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Le Pimpec, F., R. E. Kirby, F. K. King und M. Pivi. The Effect of Gas Ion Bombardment on the Secondary Electron Yield of TiN, TiCN and TiZrV Coatings For Suppressing Collective Electron Effects in Storage Rings. Office of Scientific and Technical Information (OSTI), Januar 2006. http://dx.doi.org/10.2172/875817.

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