Auswahl der wissenschaftlichen Literatur zum Thema „Interface couche antireflet/silicium“
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Zeitschriftenartikel zum Thema "Interface couche antireflet/silicium"
Mouhoub, Ahmed. „Procédés Technologiques Alternatifs de Réalisation des Photopiles Solaires au Silicium Cristallin“. Journal of Renewable Energies 4, Nr. 1 (30.06.2001): 11–22. http://dx.doi.org/10.54966/jreen.v4i1.994.
Der volle Inhalt der QuelleDissertationen zum Thema "Interface couche antireflet/silicium"
Aureau, Damien. „Interface silicium/couche organique : Maîtrise des propriétés et fonctionnalisation“. Phd thesis, Ecole Polytechnique X, 2008. http://pastel.archives-ouvertes.fr/pastel-00004611.
Der volle Inhalt der QuelleVarache, Renaud. „Développement, caractérisation et modélisation d'interfaces pour cellules solaires à haut rendement à base d'hétérojonctions de silicium“. Phd thesis, Université Paris Sud - Paris XI, 2012. http://tel.archives-ouvertes.fr/tel-00781937.
Der volle Inhalt der QuelleBodart, Vincent. „Controle de la croissance d'empilements ultra-minces carbone tungstene et silicium-tungstene par ellipsometrie cinetique in-situ : application aux miroirs pour x-mous“. Paris 7, 1987. http://www.theses.fr/1987PA077094.
Der volle Inhalt der QuelleGuillemot, François. „Couches poreuses de silice structurées par des latex : structure, propriétés mécaniques et applications optiques“. Phd thesis, Ecole Polytechnique X, 2010. http://pastel.archives-ouvertes.fr/pastel-00543809.
Der volle Inhalt der QuelleLérondel, Gilles. „Propagation de la lumière dans le silicium poreux : application à la photonique“. Université Joseph Fourier (Grenoble ; 1971-2015), 1997. http://www.theses.fr/1997GRE10253.
Der volle Inhalt der QuelleLemiti, Mustapha. „Couches de dioxyde de silicium obtenues par dépôt chimique à partir d'une phase gazeuse (C. V. D. ) : élaboration et caractérisation“. Lyon 1, 1985. http://www.theses.fr/1985LYO19022.
Der volle Inhalt der QuelleVarache, Renaud. „Development, characterization and modeling of interfaces for high efficiency silicon heterojunction solar cells“. Thesis, Paris 11, 2012. http://www.theses.fr/2012PA112279/document.
Der volle Inhalt der QuelleThe interface between amorphous silicon (a-Si:H) and crystalline silicon (c-Si) is the building block of high efficiency solar cells based on low temperature fabrication processes. Three properties of the interface determine the performance of silicon heterojunction solar cells: band offsets between a-Si:H and c-Si, interface defects and band bending in c-Si. These three points are addressed in this thesis.First, an analytical model for the calculation of the band bending in c-Si is developed. It assumes a constant density of states (DOS) in the a-Si:H band gap. The influence of most parameters of the structure on the band bending is studied: band offsets, DOS in a-Si:H, interface defects, etc. The presence of quantum confinement at the interface is discussed. Analytical calculations and temperature dependent planar conductance measurements are compared such that the band offsets on both (p)a-Si:H/(n)c-Si and (n)a-Si:H/(p)c-Si can be estimated: the valence band offset amounts 0.36 eV while the conduction band offset is 0.15 eV. In addition, it is shown that the valence band offset is independent of temperature whereas the conduction band offset follows the evolutions of c-Si and a-Si:H band gaps with temperature. A discussion of these results in the frame of the branch point theory for band line-up leads to the conclusion that the branch point in a-Si:H is independent of the doping.Then, analytical calculations are developed further to take into account the real solar cell structure where the a-Si:H/c-Si structure is in contact with a transparent conductive oxide and an undoped buffer layer is present at the interface. Measurements of the planar conductance and of the interface passivation quality are interpreted in the light of analytical calculations and numerical simulations to open a way towards a method for the optimization of silicon heterojunction solar cells. It is particularly shown that a trade-off has to be found between a good passivation quality and a significant band bending. This can be realized by tuning the buffer layer properties (thickness, doping), the TCO-contact (high work function) and the emitter (defect density and thickness). Interestingly, an emitter with a high DOS leads to better cell performances.Finally, a new type of interface has been developed, that was not applied to heterojunction solar cells so far. The c-Si surface has been oxidized in deionized water at 80 °C before the (p)a-Si:H emitter deposition such that (p)a-Si:H/SiO2/(n)c-Si structures were obtained. A tunneling current model has been developed, implemented in the 1D numerical device simulator AFORS-HET and used to study the effect of a wide band gap interfacial layer (as it is the case for SiO2) on cell performance: the fill-factor and the short-circuit current are dramatically reduced for thick and high barriers. However, a SiO2 layer has only little impact on optical properties. Fabricated samples show a passivation quality halfway between samples with no buffer layer and with an (i)a-Si:H buffer layer: this is explained by the presence of a negative fixed charge in the oxide. The band bending in (n)c-Si is higher with an oxide layer than with an (i)a-Si:H buffer layer. Solar cells demonstrate that this new concept has the potential to achieve high power conversion efficiencies: for non-optimized structures, an open-circuit voltage higher than 650 mV has been demonstrated, while the oxide does not seem to create a barrier to charge transport
Maneglia, Yves. „Étude en profondeur de l'interface si-siO2 par la technique du pompage de charges“. Grenoble INPG, 1998. http://www.theses.fr/1998INPG0169.
Der volle Inhalt der QuelleDassapa, Chandrasekar. „Couches minces de tungstène déposées par le procédé C. V. D. Pour la métallisation des circuits intégrés“. Grenoble 1, 1987. http://www.theses.fr/1987GRE10117.
Der volle Inhalt der QuelleANTOINE, ANNE-MARIE. „Mecanismes de croissance et de constitution d'interfaces dans les couches minces de semiconducteurs amorphes hydrogenes etudies par ellipsometrie spectroscopique in situ“. Paris 7, 1987. http://www.theses.fr/1987PA077179.
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