Auswahl der wissenschaftlichen Literatur zum Thema „III-V technology“
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Zeitschriftenartikel zum Thema "III-V technology"
Lile, D. L. „Advanced III–V semiconductor materials technology assessment“. Thin Solid Films 141, Nr. 2 (August 1986): L93—L94. http://dx.doi.org/10.1016/0040-6090(86)90363-9.
Der volle Inhalt der QuellePEARTON, S. J. „ION IMPLANTATION IN III–V SEMICONDUCTOR TECHNOLOGY“. International Journal of Modern Physics B 07, Nr. 28 (30.12.1993): 4687–761. http://dx.doi.org/10.1142/s0217979293003814.
Der volle Inhalt der QuelleZhang, John H., Stan Tsai, Charan Surisetty, Jody Fronheiser, Shariq Siddiqui, Steven Bentley, Raghuveer Patlolla, Donald F. Canaperi, Walter Kleemeier und Cathy Labelle. „CMP Challenges for Advanced Technology Nodes beyond Si“. MRS Advances 2, Nr. 51 (2017): 2891–902. http://dx.doi.org/10.1557/adv.2017.339.
Der volle Inhalt der QuelleHuber, A. M., und C. Grattepain. „Crystal Defect Study in III-V Compound Technology“. Materials Science Forum 38-41 (Januar 1991): 1345–50. http://dx.doi.org/10.4028/www.scientific.net/msf.38-41.1345.
Der volle Inhalt der QuelleBeneking, Heinz. „III–V Technology: The Key for Advanced Devices“. Journal of The Electrochemical Society 136, Nr. 9 (01.09.1989): 2680–86. http://dx.doi.org/10.1149/1.2097549.
Der volle Inhalt der QuelleHasegawa, Hideki, und Masamichi Akazawa. „Surface passivation technology for III–V semiconductor nanoelectronics“. Applied Surface Science 255, Nr. 3 (November 2008): 628–32. http://dx.doi.org/10.1016/j.apsusc.2008.07.002.
Der volle Inhalt der QuelleLiliental-Weber, Z., M. Li, G. S. Li, C. Chang-Hasnain und E. R. Weber. „Structure of III-V oxides“. Proceedings, annual meeting, Electron Microscopy Society of America 54 (11.08.1996): 942–43. http://dx.doi.org/10.1017/s0424820100167172.
Der volle Inhalt der QuelleThakur, R. P. S., R. Singh, A. J. Nelson und A. B. Swartzlander. „Role ofinsiturapid isothermal processing in advanced III‐V technology“. Journal of Applied Physics 70, Nr. 7 (Oktober 1991): 3857–61. http://dx.doi.org/10.1063/1.349191.
Der volle Inhalt der QuellePearton, S. J., F. Ren, S. N. G. Chu, W. S. Hobson, C. R. Abernathy, T. R. Fullowan, J. R. Lothian, R. G. Elliman, D. C. Jacobson und J. M. Poate. „Applications of ion implantation in III–V device technology“. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 79, Nr. 1-4 (Juni 1993): 648–50. http://dx.doi.org/10.1016/0168-583x(93)95434-7.
Der volle Inhalt der QuelleDutta, P. S. „III–V Ternary bulk substrate growth technology: a review“. Journal of Crystal Growth 275, Nr. 1-2 (Februar 2005): 106–12. http://dx.doi.org/10.1016/j.jcrysgro.2004.10.073.
Der volle Inhalt der QuelleDissertationen zum Thema "III-V technology"
Moran, David A. J. „Self-aligned short gate length III-V HEMT technology“. Thesis, University of Glasgow, 2004. http://theses.gla.ac.uk/6577/.
Der volle Inhalt der QuelleGreen, Richard Philip. „Physics and technology of Intersubband transitions in III-V semiconductor heterostructures“. Thesis, University of Sheffield, 2005. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.419619.
Der volle Inhalt der QuellePacella, Nan Yang. „Platform for monolithic integration of III-V devices with Si CMOS technology“. Thesis, Massachusetts Institute of Technology, 2012. http://hdl.handle.net/1721.1/76119.
Der volle Inhalt der QuelleCataloged from PDF version of thesis.
Includes bibliographical references (p. 169-165).
Monolithic integration of III-V compound semiconductors and Si complementary metal-oxide- semiconductor (CMOS) enables the creation of advanced circuits with new functionalities. In order to merge the two technologies, compatible substrate platforms and processing approaches must be developed. The Silicon on Lattice Engineered Silicon (SOLES) substrate allows monolithic integration. It is a Si substrate with embedded III-V template layer, which supports epitaxial IIIV device growth, consistent with present II-V technology. The structure is capped with a silicon-on-insulator (SOI) layer, which enables processing of CMOS devices. The processes required for fabricating and utilizing SOLES wafers which have Ge or InP as the III-V template layers are explored. Allowable thermal budgets are important to consider because the substrate must withstand the thermal budget of all subsequent device processing steps. The maximum processing temperature of Ge SOLES is found to be limited by its melting point. However, Ge diffuses through the buried Si0 2 and must be contained. Solutions include 1) limiting device processing thermal budgets, 2) improving buried silicon dioxide quality and 3) incorporating a silicon nitride diffusion barrier. InP SOLES substrates are created using wafer bonding and layer transfer of silicon, SOI and InP-on-Si wafers, established using a two-step growth method. Two different InP SOLES structures are demonstrated and their allowable thermal budgets are investigated. The thermal budgets appear to be limited by low quality silicon dioxide used for wafer bonding. For ultimate integration, parallel metallization of the III-V and CMOS devices is sought. A method of making ohmic contact to III-V materials through Si encapsulation layers, using Si CMOS technology, is established. The metallurgies and electrical characteristics of nickel silicide structures on Si/III-V films are investigated and the NiSi/Si/III-V structure is found to be optimal. This structure is composed of a standard NiSi/Si interface and novel Si/III-V interface. Specific contact resistivity of the double hetero-interface stack can be tuned by controlling Si/IIIV band alignments at the epitaxial growth interface. P-type Si/GaAs interfaces and n-type Si/InGaAs interfaces create ohmic contacts with the lowest specific contact resistivity and present viable structures for integration. A Si-encapsulated GaAs/AlGaAs laser with NiSi front-side contact is demonstrated and confirms the feasibility of these contact structures.
by Nan Yang Pacella.
Ph.D.
Dohrman, Carl Lawrence. „Substrate engineering for monolithic integration of III-V semiconductors with Si CMOS technology“. Thesis, Massachusetts Institute of Technology, 2008. http://hdl.handle.net/1721.1/44323.
Der volle Inhalt der QuelleIncludes bibliographical references (p. 165-172).
Ge virtual substrates, fabricated using Si1-xGex-.Ge, compositionally graded buffers, enable the epitaxial growth of device-quality GaAs on Si substrates, but monolithic integration of III-V semiconductors with Si CMOS using this platform is hampered by the large thickness of the Si1-xGex graded region. To address this issue, the Silicon on Lattice-engineered Silicon (SOLES) was developed, consisting of a silicon-on-insulator (SOI) structure fabricated on a Ge virtual substrate. Placement of the Si device layer at the surface makes it possible to process this platform similarly to typical SOI wafers, with the added functionality of a buried III-V template which can be used for GaAs device fabrication. This platform was fabricated using a scalable layer transfer technique. AlInGaP LEDs were also demonstrated on a SOLES substrate. In addition, an alternative growth process was investigated for Si1-xGex virtual substrates with lower threading dislocation density (TDD) and thickness. This process, the thermally relaxed ultra-thin (TRUT) buffer process, consists of coherent growth of lattice-mismatched Si1.xGex layers, followed by post-growth annealing. Growth of TRUT buffers over the Si0.5Ge0.5 to Si0.3Ge0.7 alloy range with high strain levels resulted in the nucleation of surface defects which appear to limit the maximum strain rate of compositionally graded buffers. However, application of the TRUT process in the Si0.1Ge0.9 to Ge alloy range resulted in relaxed Ge virtual substrates with a 59% reduction in TDD compared to conventional processes. Lastly, growth of high-quality lattice-matched GaAsyP1.y on Si0.5Ge0.5, Si0.3Geo.7, and Si0.2Ge0.8 virtual substrates was investigated.
(cont.) Adaptation of standard GaAs on Ge processes to this heteroepitaxial system resulted in mostly non-planar growth (similar to typical GaP growth on Si) with only limited regions of planar GaAsyP1-y layers on Si0.2Ge0.8 virtual substrates. Planar growth of GaAsyP1-y on Si0.3Ge0.7 virtual substrates was enabled by minimizing the atmospheric exposure of the Si0.3Ge0.7 as it is transferred between growth reactors, establishing that the GaAsyP1-y growth process on Si1-xGex is strongly affected by atmospheric contaminants. Further minimization of air exposure, through use of Si1-xGex homoepitaxial buffers and growth of Si1-xGex and GaAsyP1-y in a single reactor, is expected to further improve epitaxial quality across the entire lattice-matched GaAsyP1-y/Si1-xGex range, including GaP on Si.
by Carl Lawrence Dohrman.
Ph.D.
Perkins, James Michael 1978. „Magnetically assisted statistical assembly of III-V heterostructures on silicon : initial process and technology development“. Thesis, Massachusetts Institute of Technology, 2002. http://hdl.handle.net/1721.1/32712.
Der volle Inhalt der QuelleIncludes bibliographical references (leaf 75).
This work is the initial investigation of magnetically assisted statistical assembly (MASA), a novel silicon I-v integration technique developed at M.I.T. Initially procedures for processing optoelectronic devices into magnetically sensitive 40 micron discs were performed and refined. Cobalt palladium thin films were obtained and their magnetic properties were studied. An initial procedure was developed to easily integrate these patterned, magnetized films with 60-micron diameter, 5-micron deep recesses. Pill devices were then integrated into these magnetically attractive recesses. The studied showed optoelectronic pills with magnetic layers could be successfully produced and collected. Assembly using these pills was performed and showed improved recess filling yields over the non-magnetic assembly, though more investigation needs to be done. MASA was shown to offer promise as a viable and promising technique for mixed device integration.
by James Michael Perkins.
S.M.
Medjoubi, Karim. „Investigation of new solar cell technology III-V//Si behavior under irradiations for space applications“. Thesis, Institut polytechnique de Paris, 2021. http://www.theses.fr/2021IPPAX004.
Der volle Inhalt der QuelleThis work focuses on the behavior in space environment of a new photovoltaic solar cell technology: the III-V//Si tandems (2- and 3-junction), obtained by direct bonding. These cells have been exposed to electron and proton irradiations and tested in two types of environment: a) normal irradiance, 1 sun, and 300K room temperature, NIRT condition (Earth orbits) and b) low irradiance, 0.03 sun, and 120K low temperature, LILT condition (deep space). In a preliminary stage, a comparative study was conducted on 2 solar simulators, respectively equipped with a flash lamp and LED lamps, in order to ensure the reliability and reproducibility of the measurements of these multi-junctions. For the flash simulator, a tandems characterization method for I-V under 1 sun that dispense the use of isotype reference cells has been adopted, based on EQE and flash spectrum measurements. For the LED simulator, mounted in-situ on the irradiation beam, a spectrum optimization was performed in order to approach the low irradiance reference, i.e. ~3% AM0. This comparative study also allowed to establish the validity of the extrapolation by calculating I-V measurements under 1 sun towards low irradiances.Then, the compatibility of this tandem III-V//Si technology with thermal cycling on the one hand and irradiances on the other hand has been demonstrated. The bonding interface maintains its mechanical and electrical integrity face to these constraints. The impact of the irradiations on the cell performances has revealed certain similarities at 300 K and 120 K: - a marked decrease in the short-circuit current (linked to the decrease in the diffusion length) - a smaller decrease in the open-circuit voltage (generation type defects). Due to the series connection of the sub-cells, the degradation of the limiting Si (low intrinsic resistance to irradiation) dominates the behavior of the multi-junction. It has been shown that the addition of an increasing number of cells on the Si results in an increased sensitivity to irradiation; indeed, the tandem configuration restricts the absorption band of the Si to the near infrared, the spectral part most affected by the decrease in diffusion length. The use of a model based on the IQE allowed the qualification of this diffusion length degradation of the Si in tandem, as well as the damage coefficient. Unlike electrons, 1 MeV proton irradiations are at the origin of a non-homogeneous degradation in Si; by EQE measurements coupled with simulation, we have correlated this non-homogeneous degradation in Si with the position of the corresponding Bragg peak.For the low-temperature study, a linear increase in efficiency was observed up to ~150K; and below this, anomalies of I V characteristics were detected; of "S-like shape" and "flat spot" type, these defects affect the FF and thus the efficiency. Reported in the literature, these effects are characteristic of LILT conditions, and are often related to changes in the metal/semiconductor interfaces. Although significant, the LILT end-of-life electrical performance degradation of III-V//Si has been shown to be more predictable than that of III-V/Ge LILT (statistical dispersion). We have also shown that a 300 K annealing after irradiation at 120 K leads to a marked healing of the short-circuit current; this underlines the importance of in-situ characterizations to quantify cell aging under operating conditions. The Displacement Damage Dose (DDD) approach was applied for 1 MeV electrons and protons in order to compare the rate of induced degradation. This approach allows to predict the degradation of these cells whatever the fluence, particles and energy, for a space mission at 300 K
Wu, Xiaoyue. „Simulation Study of Epitaxially Regrown Vertical-Cavity Surface-Emitting Lasers“. Thesis, KTH, Skolan för informations- och kommunikationsteknik (ICT), 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-52896.
Der volle Inhalt der QuelleBouillaud, Hugo. „Fabrication et optimisation des caractéristiques thermiques de diodes Schottky de la filière GaAs et reportées sur SiHR pour des applications de multiplication de fréquences“. Electronic Thesis or Diss., Université de Lille (2022-....), 2023. http://www.theses.fr/2023ULILN043.
Der volle Inhalt der QuelleThe exponential needs associated with applications exploiting the THz domain require to expand the range of available sources and optimize their fabrication processes. In this thesis, we focused on schottky diodes for its use as frequency multipliers. Our experimental research involved optimizing the characteristics of GaAs schottky diodes through the development and implementation of an innovative fabrication process. First, we fabricated GaAs schottky diodes on GaAs substrate with several aspect ratios in order to make a reference in terms of device. Then we fabricated a flip-chip device for a 150 GHz frequency multiplication application in a waveguide block. Finally, in order to enhance the power handling of the diodes, we optimized their thermal dissipation by transferring their epitaxial structure onto a substrate with higher thermal conductivity : SiHR (high resistivity silicon). The complete technological processes for these fabrications are detailed, and the last part of the study is dedicated to their characterization. On one hand, we assessed any variations in the characteristics of GaAs diodes on GaAs induced by the different aspect ratios. On the other hand, we compared the two technologies on SiHR and GaAs substrates. This work demonstrates the potential of this type of transferred technology, where a significant reduction of thermal resistance is observed and is associated with a notable improvement of the series resistance
Lindberg, Martin. „Mode Matching Analysis of One-Dimensional Periodic Structures“. Thesis, KTH, Elektroteknisk teori och konstruktion, 2018. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-231842.
Der volle Inhalt der QuelleI detta examensarbete, analyseras elektromagnetisk v°agutbredning i periodiskav°agledarstrukturer som uppvisar glid symmetri. Analysen genomf¨ordes genom enmod matchnings-teknik som korrelerar de olika mod-koefficienterna fr°an separeraderegioner i strukturen med varandra. Denna teknik anv¨ands f¨or att ta framdispersionsrelationen f¨or tv°a endimensionella periodiska strukturer: en glid symmetriskkorrugerad meta-yta och en koaxial ledare belagd med periodiskt urgr¨opdah°aligheter. Mod matchnings-formuleringen presenteras i Kartesiska och cylindriskakoordinatsystem respektive f¨or de ovan n¨amnda fallen. Mod matchnings-resultatenj¨amf¨ors med data-simulerade resultat erh°allna fr°an CST Microwave Studio och de¨overenst¨ammer v¨al med varandra.
Fawaz, Hussein. „Technologie multifonction de transistors à effet de champ sur matériaux III-V pour logique rapide et hyperfréquences“. Lille 1, 1993. http://www.theses.fr/1993LIL10038.
Der volle Inhalt der QuelleBücher zum Thema "III-V technology"
Ayşe, Erol, Hrsg. Dilute III-V nitride semiconductors and material systems: Physics and technology. Berlin: Springer, 2008.
Den vollen Inhalt der Quelle findenErol, Ayşe. Dilute III-V nitride semiconductors and material systems: Physics and technology. Berlin: Springer, 2008.
Den vollen Inhalt der Quelle findenAyşe, Erol, Hrsg. Dilute III-V nitride semiconductors and material systems: Physics and technology. Berlin: Springer, 2008.
Den vollen Inhalt der Quelle findenLi, Tingkai, Michael A. Mastro und Armin Dadgar. III-V compound semiconductors: Integration with silicon-based microelectronics. Boca Raton: Taylor & Francis, 2010.
Den vollen Inhalt der Quelle findenConference on Semi-insulating III-V Materials (5th 1988 Malmö, Sweden). Semi-insulating III-V materials: Malmö, 1988 : proceedings of the 5th Conference on Semi-insulating III-V Materials held in Malmö, Sweden, 1-3 June 1988. Bristol, England: A. Hilger, 1988.
Den vollen Inhalt der Quelle findenEkaterinburg, Russia) Mezhdunarodnyĭ nauchno-prakticheskiĭ seminar "Intellektualʹnye informat︠s︡ionnye tekhnologii v. upravlencheskoĭ dei︠a︡telʹnosti" (3rd 2001. Intellektualʹnye informat︠s︡ionnye tekhnologii v upravlencheskoĭ dei︠a︡telʹnosti: III Mezhdunarodnyĭ nauchno-prakticheskiĭ seminar, 23-24 i︠a︡nvari︠a︡ 2001 g. : materialy. Ekaterinburg: Uralʹskiĭ gos. tekhn. universitet, 2001.
Den vollen Inhalt der Quelle findenMezhdunarodnai︠a︡, nauchnai︠a︡ konferent︠s︡ii︠a︡ "Chelovek kulʹtura i. obshchestvo v. kontekste globalizat︠s︡ii sovremennogo mira" (3rd 2004 Moscow Russia). Chelovek, kulʹtura i obshchestvo v kontekste globalizat︠s︡ii sovremennogo mira: Ėlektronnai︠a︡ kulʹtura i novye gumanitarnye tekhnologii XXI veka : materialy III Mezhdunarodnoĭ nauchnoĭ konferent︠s︡ii. Moskva: Izd-vo "Nezavisimyĭ in-t grazhdanskogo ob-va", 2004.
Den vollen Inhalt der Quelle findenSoldatkina, I͡A V., und Elena I͡Urʹevna Lazareva. Mediĭnye prot︠s︡essy v sovremennom gumanitarnom prostranstve: Podkhody k izuchenii︠u︡, ėvoli︠u︡t︠s︡ii︠a︡, perspektivy : materialy III nauchno-prakticheskoĭ konferent︠s︡ii. Moskva: MPGU, 2017.
Den vollen Inhalt der Quelle findenBelarus) Mezhdunarodnai︠a︡ konferent︠s︡ii︠a︡ "Informat︠s︡ionnye sistemy i tekhnologii" (3nd 2006 Minsk. Informat︠s︡ionnye sistemy i tekhnologii (IST'2006): Tretʹi︠a︡ Mezhdunarodnai︠a︡ konferent︠s︡ii︠a︡ (Minsk, 1--3 noi︠a︡bri︠a︡ 2006 g.) : materialy : v 2 chasti︠a︡kh = Information systems and technologies (IST'2006) : proceedings of the III International conference (Minsk, November 1--3, 2006) In two parts. Minsk: Akademii︠a︡ upravlenii︠a︡ pri Prezidente Respubliki Belarusʹ, 2006.
Den vollen Inhalt der Quelle findenUnited States. National Aeronautics and Space Administration., Hrsg. Growth and characterization of binary and pseudo-binary III-V compounds exhibiting non-linear optical behavior and undergraduate research opportunities in microgravity science and technology. [Washington, DC: National Aeronautics and Space Administration, 1992.
Den vollen Inhalt der Quelle findenBuchteile zum Thema "III-V technology"
Harris, J. J. „III–V Microwave Devices“. In The Technology and Physics of Molecular Beam Epitaxy, 425–65. Boston, MA: Springer US, 1985. http://dx.doi.org/10.1007/978-1-4899-5364-3_14.
Der volle Inhalt der QuelleIga, Kenichi, und Susumu Kinoshita. „Epitaxy of III–V Compound Semiconductors“. In Process Technology for Semiconductor Lasers, 43–50. Berlin, Heidelberg: Springer Berlin Heidelberg, 1996. http://dx.doi.org/10.1007/978-3-642-79576-3_4.
Der volle Inhalt der QuelleDavies, Graham J., und David Williams. „III–V MBE Growth Systems“. In The Technology and Physics of Molecular Beam Epitaxy, 15–46. Boston, MA: Springer US, 1985. http://dx.doi.org/10.1007/978-1-4899-5364-3_2.
Der volle Inhalt der QuelleIlegems, M. „Properties of III–V Layers“. In The Technology and Physics of Molecular Beam Epitaxy, 83–142. Boston, MA: Springer US, 1985. http://dx.doi.org/10.1007/978-1-4899-5364-3_5.
Der volle Inhalt der QuelleWoodall, Jerry M. „Non-Silicon MOSFET Technology: A Long Time Coming“. In Fundamentals of III-V Semiconductor MOSFETs, 1–6. Boston, MA: Springer US, 2010. http://dx.doi.org/10.1007/978-1-4419-1547-4_1.
Der volle Inhalt der QuelleKulkarni, Jaydeep P., und Kaushik Roy. „Technology/Circuit Co-Design for III-V FETs“. In Fundamentals of III-V Semiconductor MOSFETs, 423–42. Boston, MA: Springer US, 2010. http://dx.doi.org/10.1007/978-1-4419-1547-4_14.
Der volle Inhalt der QuelleMoerman, I., und P. Demeester. „Advanced Epitaxial Techniques for III-V Materials“. In Science and Technology of Crystal Growth, 137–48. Dordrecht: Springer Netherlands, 1995. http://dx.doi.org/10.1007/978-94-011-0137-0_11.
Der volle Inhalt der QuelleYip, Sen Po, Lifan Shen, Edwin Y. B. Pun und Johnny C. Ho. „Properties Engineering of III–V Nanowires for Electronic Application“. In Nanostructure Science and Technology, 53–82. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-13-2367-6_3.
Der volle Inhalt der QuelleIlegems, M. „III–V Compound Semiconductor Epitaxy for Optoelectronic Integration“. In Optoelectronic Integration: Physics, Technology and Applications, 61–106. Boston, MA: Springer US, 1994. http://dx.doi.org/10.1007/978-1-4615-2686-5_3.
Der volle Inhalt der QuelleSingh, R. B., R. S. Paroda und Malavika Dadlani. „Science, Technology and Innovation“. In India Studies in Business and Economics, 213–50. Singapore: Springer Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-0763-0_8.
Der volle Inhalt der QuelleKonferenzberichte zum Thema "III-V technology"
Passlack, M., R. Droopad, K. Rajagopalan, J. Abrokwah, P. Zurcher und P. Fejes. „High Mobility III-V Mosfet Technology“. In 2006 IEEE Compound Semiconductor Integrated Circuit Symposium. IEEE, 2006. http://dx.doi.org/10.1109/csics.2006.319914.
Der volle Inhalt der QuelleGrant, Ian R. „Progress in III-V materials technology“. In European Symposium on Optics and Photonics for Defence and Security, herausgegeben von Anthony W. Vere, James G. Grote und Francois Kajzar. SPIE, 2004. http://dx.doi.org/10.1117/12.583023.
Der volle Inhalt der QuellePasslack, Matthias. „III–V metal-oxide-semiconductor technology“. In Related Materials (IPRM). IEEE, 2008. http://dx.doi.org/10.1109/iciprm.2008.4703075.
Der volle Inhalt der QuelleChiah, Siau Ben, Xing Zhou, Binit Syamal, Kenneth Eng Kian Lee, Cheng Yeow Ng und Eugene A. Fitzgerald. „Hybrid III–V/Si-CMOS PDK for Monolithic Heterogeneously-Integrated III–V/Si Technology Platforms“. In 2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT). IEEE, 2020. http://dx.doi.org/10.1109/icsict49897.2020.9278196.
Der volle Inhalt der QuelleFitzgerald, E. A., M. T. Bulsara, Y. Bai, C. Cheng, W. K. Liu, D. Lubyshev, J. M. Fastenau et al. „Monolithic III-V/Si integration“. In 2008 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT). IEEE, 2008. http://dx.doi.org/10.1109/icsict.2008.4734819.
Der volle Inhalt der QuelleForbes, David V., Seth M. Hubbard, Christopher Bailey, Stephen Polly, John Andersen und Ryne Raffaelle. „III-V quantum dot enhanced photovoltaic devices“. In SPIE Solar Energy + Technology, herausgegeben von Loucas Tsakalakos. SPIE, 2010. http://dx.doi.org/10.1117/12.863142.
Der volle Inhalt der QuelleYao, Ruizhe, Bowen Zheng, Hyun Kum, Yunjo Kim, Sanghoon Bae, Jeehwan Kim, Hualiang Zhang und Wei Guo. „Graphene/III-V Hybrid Diode Optical Modulator“. In CLEO: Applications and Technology. Washington, D.C.: OSA, 2018. http://dx.doi.org/10.1364/cleo_at.2018.jtu2a.7.
Der volle Inhalt der QuelleTakagi, Shinichi. „(III–V/Ge)-On-Insulator CMOS technology“. In 2011 IEEE International SOI Conference. IEEE, 2011. http://dx.doi.org/10.1109/soi.2011.6081698.
Der volle Inhalt der QuelleDeppe, Dennis G., und Diana L. Huffaker. „Native oxide technology for III-V optoelectronic devices“. In Critical Review Collection. SPIE, 1998. http://dx.doi.org/10.1117/12.300617.
Der volle Inhalt der QuelleRoelkens, G., L. Liu, J. Brouckaert, J. Van Campenhout, F. Van Laere, D. Van Thourhout und R. Baets. „III-V/Silicon Photonics: Technology and Integrated Devices“. In Integrated Photonics and Nanophotonics Research and Applications. Washington, D.C.: OSA, 2008. http://dx.doi.org/10.1364/ipnra.2008.imc1.
Der volle Inhalt der QuelleBerichte der Organisationen zum Thema "III-V technology"
Muñoz, Ernesto, Iván Hernández, Francisco González, Nathalie Cely und Iván Prieto. The Discovery of New Export Products in Ecuador. Inter-American Development Bank, Juni 2010. http://dx.doi.org/10.18235/0010828.
Der volle Inhalt der QuelleAldendifer, Elise, McKenzie Coe, Taylor Faught, Ian Klein, Peter Kuylen, Keeli Lane, Robert Loughran et al. The Safe and Efficient Development of Offshore Transboundary Hydrocarbons: Best Practices from the North Sea and Their Application to the Gulf of Mexico. Herausgegeben von Gabriel Eckstein. Texas A&M University School of Law Program in Energy, Environmental, & Natural Resource Systems, September 2019. http://dx.doi.org/10.37419/eenrs.offshoretransboundaryhydrocarbons.
Der volle Inhalt der QuelleWilson, Thomas E., Avraham A. Levy und Tzvi Tzfira. Controlling Early Stages of DNA Repair for Gene-targeting Enhancement in Plants. United States Department of Agriculture, März 2012. http://dx.doi.org/10.32747/2012.7697124.bard.
Der volle Inhalt der QuelleDawson, William O., und Moshe Bar-Joseph. Creating an Ally from an Adversary: Genetic Manipulation of Citrus Tristeza. United States Department of Agriculture, Januar 2004. http://dx.doi.org/10.32747/2004.7586540.bard.
Der volle Inhalt der QuelleKira, Beatriz, Rutendo Tavengerwei und Valary Mumbo. Points à examiner à l'approche des négociations de Phase II de la ZLECAf: enjeux de la politique commerciale numérique dans quatre pays d'Afrique subsaharienne. Digital Pathways at Oxford, März 2022. http://dx.doi.org/10.35489/bsg-dp-wp_2022/01.
Der volle Inhalt der QuelleJoel, Daniel M., Steven J. Knapp und Yaakov Tadmor. Genomic Approaches for Understanding Virulence and Resistance in the Sunflower-Orobanche Host-Parasite Interaction. United States Department of Agriculture, August 2011. http://dx.doi.org/10.32747/2011.7592655.bard.
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