Auswahl der wissenschaftlichen Literatur zum Thema „III-As nanowires“
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Zeitschriftenartikel zum Thema "III-As nanowires"
Mastro, Michael A., Neeraj Nepal, Fritz Kub, Jennifer K. Hite, Jihyun Kim und Charles R. Eddy. „Nickel Foam as a Substrate for III-nitride Nanowire Growth“. MRS Proceedings 1538 (2013): 311–16. http://dx.doi.org/10.1557/opl.2013.504.
Der volle Inhalt der QuelleLeshchenko E. D. und Dubrovskii V. G. „Modeling the growth of tapered nanowires on reflecting substrates“. Technical Physics Letters 48, Nr. 12 (2022): 11. http://dx.doi.org/10.21883/tpl.2022.12.54937.19358.
Der volle Inhalt der QuelleDubrovskii, Vladimir G., und Egor D. Leshchenko. „Modeling the Radial Growth of Self-Catalyzed III-V Nanowires“. Nanomaterials 12, Nr. 10 (16.05.2022): 1698. http://dx.doi.org/10.3390/nano12101698.
Der volle Inhalt der QuelleGAO, Q., H. J. JOYCE, S. PAIMAN, J. H. KANG, H. H. TAN, Y. KIM, L. M. SMITH et al. „III-V COMPOUND SEMICONDUCTOR NANOWIRES FOR OPTOELECTRONIC DEVICE APPLICATIONS“. International Journal of High Speed Electronics and Systems 20, Nr. 01 (März 2011): 131–41. http://dx.doi.org/10.1142/s0129156411006465.
Der volle Inhalt der QuelleЛещенко, Е. Д., und В. Г. Дубровский. „Моделирование роста заостренных нитевидных нанокристаллов на маскированных подложках“. Письма в журнал технической физики 48, Nr. 23 (2022): 14. http://dx.doi.org/10.21883/pjtf.2022.23.53945.19358.
Der volle Inhalt der QuelleYip, Sen Po, Wei Wang und Johnny C. Ho. „(Invited, Digital Presentation) Ternary III-Sb Nanowires: Synthesis and Their Electronic and Optoelectronics Applications“. ECS Meeting Abstracts MA2022-02, Nr. 36 (09.10.2022): 1306. http://dx.doi.org/10.1149/ma2022-02361306mtgabs.
Der volle Inhalt der QuelleSaleem, Samra, Ammara Maryam, Kaneez Fatima, Hadia Noor, Fatima Javed und Muhammad Asghar. „Phase Control Growth of InAs Nanowires by Using Bi Surfactant“. Coatings 12, Nr. 2 (15.02.2022): 250. http://dx.doi.org/10.3390/coatings12020250.
Der volle Inhalt der QuelleKang, Sung Bum, Rahul Sharma, Minhyeok Jo, Su In Kim, Jeongwoo Hwang, Sang Hyuk Won, Jae Cheol Shin und Kyoung Jin Choi. „Catalysis-Free Growth of III-V Core-Shell Nanowires on p-Si for Efficient Heterojunction Solar Cells with Optimized Window Layer“. Energies 15, Nr. 5 (28.02.2022): 1772. http://dx.doi.org/10.3390/en15051772.
Der volle Inhalt der QuelleДубровский, В. Г., А. С. Соколовский und И. В. Штром. „Свободная энергия образования зародыша при росте III-V нитевидного нанокристалла“. Письма в журнал технической физики 46, Nr. 18 (2020): 3. http://dx.doi.org/10.21883/pjtf.2020.18.49991.18401.
Der volle Inhalt der QuelleDemontis, Valeria, Valentina Zannier, Lucia Sorba und Francesco Rossella. „Surface Nano-Patterning for the Bottom-Up Growth of III-V Semiconductor Nanowire Ordered Arrays“. Nanomaterials 11, Nr. 8 (16.08.2021): 2079. http://dx.doi.org/10.3390/nano11082079.
Der volle Inhalt der QuelleDissertationen zum Thema "III-As nanowires"
Hölzel, Sara Sibylle [Verfasser]. „Group III-Nitride Nanowires as Multifunctional Optical Biosensors / Sara Sibylle Hölzel“. Gießen : Universitätsbibliothek, 2018. http://d-nb.info/1173615059/34.
Der volle Inhalt der QuelleHölzel, Sara [Verfasser]. „Group III-Nitride Nanowires as Multifunctional Optical Biosensors / Sara Sibylle Hölzel“. Gießen : Universitätsbibliothek, 2018. http://d-nb.info/1173615059/34.
Der volle Inhalt der QuelleChereau, Emmanuel. „Synthèse et modélisation de nanofils III-As par SAG-HVPE : vers des dispositifs pour l'infrarouge et la conversion d'énergie“. Electronic Thesis or Diss., Université Clermont Auvergne (2021-...), 2024. http://www.theses.fr/2024UCFA0020.
Der volle Inhalt der QuelleThis work focuses on the selective area growth (SAG) of III-As nanowires (NWs) by hydride vapor-phase epitaxy (HVPE). First, we have studied the SAG of GaAs NWs on GaAs substrates. Systematic studies according to growth conditions have demonstrated a growth suppression effect under arsenic-rich atmosphere. These observations were supported by a kinetic model which, for the first time in HVPE, takes into account the diffusion of Ga adatoms on the NWs side facets. Then, a preliminary study of the doping of NWs was carried out, as well as the growth of p-i-n junctions in NWs. The results are encouraging regarding the fabrication of NW-based devices by HVPE. Secondly, we have studied the SAG of InAs and InGaAs on GaAs and Si substrates. It turned out that growth suppression also occurs for InAs NWs. As for InGaAs, NW arrays with various compositions have been successfully obtained. A growth model was developed revealing that the NWs composition is controlled by growth kinetics rather than thermodynamic factors. This greatly simplifies the control of the composition across a wide range of HVPE parameters. These results show the capability of HVPE for the fabrication of homogeneous InGaAs NW arrays with widely tunable compositions
Burgess, Timothy. „From Dopant to Source: The Use of Zinc as an Enabler in the Synthesis of Nanostructures by Metalorganic Vapour Phase Epitaxy“. Phd thesis, 2017. http://hdl.handle.net/1885/144611.
Der volle Inhalt der QuelleBuchteile zum Thema "III-As nanowires"
Shilla, Pooja, Raj Kumar und Arvind Kumar. „III-V-Based Gate-All-Around Cylindrical Nanowire Junctionless Field Effect Transistor“. In Advances in Computer and Electrical Engineering, 101–21. IGI Global, 2021. http://dx.doi.org/10.4018/978-1-7998-6467-7.ch005.
Der volle Inhalt der QuelleRoutray, Soumyaranjan, und Trupti Lenka. „III-Nitride Nanowires: Future Prospective for Photovoltaic Applications“. In Nanowires - Recent Progress [Working Title]. IntechOpen, 2020. http://dx.doi.org/10.5772/intechopen.95011.
Der volle Inhalt der QuelleTakele Geldasa, Fikadu. „Solar Energy Conversion Efficiency, Growth Mechanism and Design of III–V Nanowire-Based Solar Cells: Review“. In Advances in Nanowires Synthesis and Applications to Sensing Technologies [Working Title]. IntechOpen, 2022. http://dx.doi.org/10.5772/intechopen.105985.
Der volle Inhalt der QuelleNguyen, Hoang-Duy, Mano Bala Sankar Muthu und Hieu Pham Trung Nguyen. „Phosphor-Converted III-Nitride Nanowire White Light-Emitting Diodes“. In Nanoelectronic Devices and Applications, 72–89. BENTHAM SCIENCE PUBLISHERS, 2024. http://dx.doi.org/10.2174/9789815238242124010005.
Der volle Inhalt der QuelleKumar, Raj, Shashi Bala und Arvind Kumar. „Comparative Performance Analysis of Nanowire and Nanotube Field Effect Transistors“. In Advances in Computer and Electrical Engineering, 54–70. IGI Global, 2021. http://dx.doi.org/10.4018/978-1-7998-6467-7.ch003.
Der volle Inhalt der QuelleBala, Shashi, Raj Kumar, Jeetendra Singh und Sanjeev Kumar Sharma. „Design and Simulation Analysis of NWFET for Digital Application“. In Advances in Computer and Electrical Engineering, 123–38. IGI Global, 2021. http://dx.doi.org/10.4018/978-1-7998-6467-7.ch006.
Der volle Inhalt der QuelleKonferenzberichte zum Thema "III-As nanowires"
Saerens, G., I. Tang, E. Bloch, K. Frizyuk, M. Reig Escalé, C. Renaut, F. Timpu et al. „Semiconductor III-V Nanowires as Building Blocks for Flexible Nonlinear Photonic Components“. In CLEO: QELS_Fundamental Science. Washington, D.C.: OSA, 2020. http://dx.doi.org/10.1364/cleo_qels.2020.ftu3q.3.
Der volle Inhalt der QuelleLiu, Wenjun, Yizhang Yang und Mehdi Asheghi. „Thermal Characterization of Silicon Nanowires“. In ASME 4th Integrated Nanosystems Conference. ASMEDC, 2005. http://dx.doi.org/10.1115/nano2005-87063.
Der volle Inhalt der QuelleFlorini, Nikoletta. „Core-shell nanowires based on III-V alloys: Strain distribution as a function of structure and composition“. In European Microscopy Congress 2020. Royal Microscopical Society, 2021. http://dx.doi.org/10.22443/rms.emc2020.1230.
Der volle Inhalt der QuelleLyeo, Ho-Ki, C. K. Ken Shih, Uttam Ghoshal und Li Shi. „Thermoelectric Mapping of Nanostructures“. In ASME 2002 International Mechanical Engineering Congress and Exposition. ASMEDC, 2002. http://dx.doi.org/10.1115/imece2002-32766.
Der volle Inhalt der QuelleKleindienst, R., V. Cimalla, M. Eickhoff, A. Grewe, K. Holc, J. Schätzle, U. Schwarz, J. Teubert und S. Sinzinger. „Micro-optical system as integration platform for III-N nanowire based opto-chemical detectors“. In SPIE MOEMS-MEMS, herausgegeben von Georg von Freymann, Winston V. Schoenfeld und Raymond C. Rumpf. SPIE, 2013. http://dx.doi.org/10.1117/12.2002411.
Der volle Inhalt der QuelleGeelhaar, L. „(Invited) Nanowire Growth as a Means for the Monolithic Integration of III-V Compound Semiconductors on Si“. In 2015 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2015. http://dx.doi.org/10.7567/ssdm.2015.d-6-1.
Der volle Inhalt der QuelleStellari, Franco, Alan J. Weger, Seongwon Kim, Dzmitry Maliuk, Peilin Song, Herschel A. Ainspan, Young Kwark et al. „A Superconducting Nanowire Single-Photon Detector (SnSPD) System for Ultra Low Voltage Time-Resolved Emission (TRE) Measurements of VLSI Circuits“. In ISTFA 2013. ASM International, 2013. http://dx.doi.org/10.31399/asm.cp.istfa2013p0182.
Der volle Inhalt der QuelleRomero, David A., Elham Pakseresht, Daniel Sellan, Aydin Nabovati und Cristina Amon. „A Hierarchical Framework for Thermal Modelling of Electronic Devices: From Atoms to Chips“. In ASME 2013 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems. American Society of Mechanical Engineers, 2013. http://dx.doi.org/10.1115/ipack2013-73202.
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