Thematische Bibliographien / II-VI alloys

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Auswahl der wissenschaftlichen Literatur zum Thema „II-VI alloys“

Autor: Grafiati

Veröffentlicht am 25. Mai 2024

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Zeitschriftenartikel zum Thema "II-VI alloys"

Myles, Charles W. „Microhardness of Hg-containing II–VI alloys“. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 10, Nr. 4 (Juli 1992): 1454. http://dx.doi.org/10.1116/1.586271.

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Liu, Xinyu, und J. K. Furdyna. „Optical dispersion of ternary II–VI semiconductor alloys“. Journal of Applied Physics 95, Nr. 12 (15.06.2004): 7754–64. http://dx.doi.org/10.1063/1.1739291.

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Perkowitz, S., L. S. Kim und P. Becla. „Infrared bond ionicity in ternary II–VI alloys“. Solid State Communications 77, Nr. 6 (Februar 1991): 471–74. http://dx.doi.org/10.1016/0038-1098(91)90239-r.

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Chu, T. L., S. S. Chu, C. Ferekides, J. Britt, C. Q. Wu, G. Chen und N. Schultz. „Thin films of II–VI compounds and alloys“. Solar Cells 30, Nr. 1-4 (Mai 1991): 123–30. http://dx.doi.org/10.1016/0379-6787(91)90044-p.

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Jaroszyński, J., T. Andrearczyk, G. Karczewski, J. Wróbel, T. Wojtowicz, E. Papis, E. Kamińska, A. Piotrowska, Dragana Popović und T. Dietl. „Quantum Hall ferromagnetism in II–VI based alloys“. physica status solidi (b) 241, Nr. 3 (März 2004): 712–17. http://dx.doi.org/10.1002/pssb.200304293.

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Wang, Zhihai, Bruce A. Bunker, Robert A. Mayanovic, Ursula Debska und Jacek K. Furdyna. „Lattice Distortion and Ferroelectricity in IV-VI and II-VI Semiconductor Alloys“. Japanese Journal of Applied Physics 32, S2 (01.01.1993): 673. http://dx.doi.org/10.7567/jjaps.32s2.673.

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v. Wensierski, H. „Ordering and diffusion in II-VI/III-VI alloys with structural vacancies“. Solid State Ionics 101-103, Nr. 1-2 (November 1997): 479–87. http://dx.doi.org/10.1016/s0167-2738(97)00145-8.

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Wensierski, H. v., D. Weitze und V. Leute. „Ordering and diffusion in II–VI/III–VI alloys with structural vacancies“. Solid State Ionics 101-103 (November 1997): 479–87. http://dx.doi.org/10.1016/s0167-2738(97)84072-6.

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Zamir, D., K. Beshah, P. Becla, P. A. Wolff, R. G. Griffin, D. Zax, S. Vega und N. Yellin. „Nuclear magnetic resonance studies of II–VI semiconductor alloys“. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 6, Nr. 4 (Juli 1988): 2612–13. http://dx.doi.org/10.1116/1.575516.

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Berding, M. A., S. Krishnamurthy, A. Sher und A. B. Chen. „Ballistic transport in II–VI semiconductor compounds and alloys“. Journal of Crystal Growth 86, Nr. 1-4 (Januar 1988): 33–38. http://dx.doi.org/10.1016/0022-0248(90)90695-h.

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Dissertationen zum Thema "II-VI alloys"

Léger, Valentin. „Propriétés physico-chimiques des défauts dans les alliages II-VI pour la détection infrarouge“. Electronic Thesis or Diss., Sorbonne université, 2023. http://www.theses.fr/2023SORUS214.

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L’amélioration de la qualité des matériaux II-VI est une étape essentielle pour maintenir de hautes performances à des températures de fonctionnement des détecteurs infrarouges refroidis plus élevées (technologies HOT). En effet, la qualité et la stabilité de l’image sont affectées par l’activité électrique parasite (bruits basse fréquence) induite par certains défauts cristallins. L’objectif de ces travaux de thèse est alors de caractériser plusieurs variantes de qualité matériau de l’épitaxie active de Hg1-xCdxTe et son substrat de Cd1-xZnxTe à partir de techniques spectroscopiques, et d’établir un bilan comparatif des signatures physico-chimiques des défauts ponctuels. Dans ce but, les populations de défauts ont été investiguées dans les deux composés par spectroscopie à annihilation de positons (PAS). L’antiparticule de l’électron est particulièrement sensible aux défauts lacunaires, intrinsèquement présents en concentration importante dans les alliages considérés. Des profils de concentration de lacunes en proche surface ont été obtenus avec un faisceau de positons lents. L’étude des substrats a été approfondie par des mesures de cathodoluminescence résolue spectralement (CL). Cette technique est particulièrement puissante à basse température où les défauts responsables des mécanismes radiatifs ont pu être identifiés. La CL permet également de cartographier les propriétés de luminescence à une échelle submicronique
Improving II-VI material quality is an essential step to maintain high electro-optical performances at higher operating temperature of cooled infrared detectors (HOT technologies). Indeed, image quality and stability are challenged by the electrical activity (low-frequency noises) induced by some crystal defects. The aim of this thesis work is to characterize several crystal qualities of the epitaxial Hg1-xCdxTe as well as its Cd1-xZnxTe substrate by spectroscopic techniques, and to establish a comparative review of the physico-chemical fingerprints of point defects. For this purpose, defect populations were investigated in both compounds by positron annihilation spectroscopy (PAS). The electron antiparticle is particularly sensitive to open-volume defects, intrinsically present in high concentrations in the considered alloys. Vacancy concentration profiles in the near-surface region can then be obtained with a slow positron beam. The substrate study was extended with spectrally resolved cathodoluminescence (CL) measurements. This technique is especially powerful at low temperature where defects involved in radiative mechanisms have been identified. CL also allows to map luminescence properties at the sub-micrometer scale

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Li, Zhong. „Growth and Characterization of ZnSe and ZnTe Alloy Nanowires“. Thesis, 2012. http://hdl.handle.net/1807/33854.

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The objective of this thesis is to explore the synthesis and characterization of high quality binary ZnTe nanowires with great potential for development of optoelectronic devices including high efficiency photovoltaic cells for energy conversion and high sensitivity photodetectors for green fluorescent protein bioimaging at single molecule level. To systematically explore the fabrication process for high quality nanowires, a chemical vapour deposition system was built for nanowire growth. Computational fluid dynamics simulations were used to optimize the reactor and growth parameters. The simulations were validated by experimental measurements. Room temperature photoluminescence measurements showed that high crystal quality with very low defects by single step growth was achieved. This single step growth technique makes a great improvement compared to the reported growth followed by annealing, which achieved equivalent crystal quality. This simplification could be of use in large scale synthesis of nanowires. The simulation results also showed that reactant species concentration is a key factor influencing the growth. A metal-organic chemical vapour deposition system was thus built to independently control reactant concentrations for ZnTe nanowire growth. Temperature-dependent photoluminescence measurements of as-grown ZnTe nanowires showed a strong near band-edge emission. In addition, a deep level oxygen-related band was observed for the first time. From the detailed analysis of thermal quenching of the photoluminescence, it was shown that the deep level emission was partially from the intermediate band of the material. This is of great importance due to the theoretical absorption efficiency that is as high as 63% for intermediate band materials, which is more than two times of that of current single junction concentrators, and few materials possessing this property. Individual ZnTe nanowires, grown after optimization, were patterned and contacted, and their conductivity and photoconductivity were measured at room temperature. A single ZnTe nanowire serving as a photodetector was shown to have the highest reported visible responsivity of 360 A/W (at 530 nm), and a gain of 8,640 (at 3 V bias). The responsivity is roughly 18 times higher than that of silicon avalanche photodiodes. This demonstrates that ZnTe nanowires are strong candidates for single photon detection.

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„I-III-VI₂ and II-VI/I-III-VI₂ Alloyed nanocrystals and their heterostructures: synthesis, characterization and potential applications“. Thesis, 2011. http://library.cuhk.edu.hk/record=b6075382.

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Xu, Yeming = I-III-VI₂χχχII-VI和I-III-VI₂χχχχχχχχχχχχχχχ : 合成, 表征以及潛在应用 / 徐業明.
Thesis (Ph.D.)--Chinese University of Hong Kong, 2011.
Includes bibliographical references (leaves 130-134).
Electronic reproduction. Hong Kong : Chinese University of Hong Kong, [2012] System requirements: Adobe Acrobat Reader. Available via World Wide Web.
Abstract also in Chinese.
Xu, Yeming = I-III-VI₂ zu yi ji II-VI he I-III-VI₂ zu fu he na mi cai liao he tuo men de yi zhi jie gou : he cheng, biao zheng yi ji qian zai ying yong / Xu Yeming.

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„Structural and optical properties of II-VI and III-V compound semiconductors“. Doctoral diss., 2013. http://hdl.handle.net/2286/R.I.17850.

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abstract: This dissertation is on the study of structural and optical properties of some III-V and II-VI compound semiconductors. The first part of this dissertation is a study of the deformation mechanisms associated with nanoindentation and nanoscratching of InP, GaN, and ZnO crystals. The second part is an investigation of some fundamental issues regarding compositional fluctuations and microstructure in GaInNAs and InAlN alloys. In the first part, the microstructure of (001) InP scratched in an atomic force microscope with a small diamond tip has been studied as a function of applied normal force and crystalline direction in order to understand at the nanometer scale the deformation mechanisms in the zinc-blende structure. TEM images show deeper dislocation propagation for scratches along <110> compared to <100>. High strain fields were observed in <100> scratches, indicating hardening due to locking of dislocations gliding on different slip planes. Reverse plastic flow have been observed in <110> scratches in the form of pop-up events that result from recovery of stored elastic strain. In a separate study, nanoindentation-induced plastic deformation has been studied in c-, a-, and m-plane ZnO single crystals and c-plane GaN respectively, to study the deformation mechanism in wurtzite hexagonal structures. TEM results reveal that the prime deformation mechanism is slip on basal planes and in some cases, on pyramidal planes, and strain built up along particular directions. No evidence of phase transformation or cracking was observed in both materials. CL imaging reveals quenching of near band-edge emission by dislocations. In the second part, compositional inhomogeneity in quaternary GaInNAs and ternary InAlN alloys has been studied using TEM. It is shown that exposure to antimony during growth of GaInNAs results in uniform chemical composition in the epilayer, as antimony suppresses the surface mobility of adatoms that otherwise leads to two-dimensional growth and elemental segregation. In a separate study, compositional instability is observed in lattice-matched InAlN films grown on GaN, for growth beyond a certain thickness. Beyond 200 nm of thickness, two sub-layers with different indium content are observed, the top one with lower indium content.
Dissertation/Thesis
Ph.D. Physics 2013

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Bücher zum Thema "II-VI alloys"

Properties of semiconductor alloys: Group-IV, III-V and II-VI semiconductors. Chichester, West Sussex, U.K: Wiley, 2009.

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Adachi, Sadao. Properties of semiconductor alloys: Group-IV, III-V and II-VI semiconductors. Chichester, West Sussex, U.K: Wiley, 2009.

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1950-, Adachi Sadao, Hrsg. Properties of group-IV, III-V and II-VI semiconductors. Chichester, England: John Wiley & Sons, 2005.

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Marie, Hacht Anne, Hrsg. Shakespeare for students: Critical interpretations of Shakespeare's plays and poetry. 2. Aufl. Detroit: Thomson Gale, 2007.

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Tomashyk, Vasyl. Quaternary Alloys Based on II - VI Semiconductors. Taylor & Francis Group, 2014.

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Tomashyk, Vasyl. Quaternary Alloys Based on II - VI Semiconductors. Taylor & Francis Group, 2014.

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Tomashyk, Vasyl. Quaternary Alloys Based on II - VI Semiconductors. Taylor & Francis Group, 2019.

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Tomashyk, Vasyl. Quaternary Alloys Based on II - VI Semiconductors. Taylor & Francis Group, 2014.

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Quaternary Alloys Based on II - VI Semiconductors. Taylor & Francis Group, 2014.

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Tomashyk, Vasyl. Multinary Alloys Based on II-VI Semiconductors. Taylor & Francis Group, 2015.

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Buchteile zum Thema "II-VI alloys"

Korotcenkov, Ghenadii, und Tetyana Semikina. „Photodetectors Based on II-VI Multicomponent Alloys“. In Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors, 349–67. Cham: Springer International Publishing, 2023. http://dx.doi.org/10.1007/978-3-031-20510-1_15.

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Farrow, R. F. C. „MBE Growth of II-VI and IV-VI Compounds and Alloys“. In Molecular Beam Epitaxy and Heterostructures, 227–62. Dordrecht: Springer Netherlands, 1985. http://dx.doi.org/10.1007/978-94-009-5073-3_7.

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Kurban, Mustafa, Osman Barış Malcıoğlu und Şakir Erkoç. „Ternary II-VI Alloys Promising for Application in Photodetectors“. In Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors, 87–107. Cham: Springer International Publishing, 2023. http://dx.doi.org/10.1007/978-3-031-19531-0_4.

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Elliott, C. T. „Photoconductive detectors in HgCdTe and related alloys“. In Narrow-gap II–VI Compounds for Optoelectronic and Electromagnetic Applications, 433–49. Boston, MA: Springer US, 1997. http://dx.doi.org/10.1007/978-1-4613-1109-6_14.

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Lemasson, Philippe, und Chau Nguyen Van Huong. „Optical Studies of ZnXTe(X=Mn,Hg) Alloys“. In Growth and Optical Properties of Wide-Gap II–VI Low-Dimensional Semiconductors, 87–95. Boston, MA: Springer US, 1989. http://dx.doi.org/10.1007/978-1-4684-5661-5_9.

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Leute, V. „A Discussion of Diffusion and Solid State Reactions in Alloys of II-VI, III-VI And IV-VI Compounds on the Basis of Phase Diagrams“. In High-Temperature Superconductors and Novel Inorganic Materials, 291–96. Dordrecht: Springer Netherlands, 1999. http://dx.doi.org/10.1007/978-94-011-4732-3_49.

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Brazeau, Stéphanie, Cécile Vignolles, Ramesha S. Krishnamurthy, Juli Trtanj, John Haynes, Steven Ramage, Thibault Catry et al. „Needs, challenges, and opportunities: a review by experts.“ In Earth observation, public health and one health: activities, challenges and opportunities, 93–103. Wallingford: CABI, 2022. http://dx.doi.org/10.1079/9781800621183.0003.

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Abstract This book chapter discusses all the information collected has been grouped together into eight categories: (i) aligning with and supporting UN Sustainable Development Goals; (ii) focusing on public health needs and key theme areas for further research; (iii) accessing and developing Earth Observation (EO) and geospatial evidence-based data and products leveraging public health capacities; (iv) developing a sustainable community of practice; (v) developing knowledge and know-how; (vi) developing solutions: methods, tools, and systems; (vii) implementing technical infrastructures and technologies; and (viii) participating in EO satellite mission development for monitoring disease risks. One such advancement attributable to Landsat data is the ability to monitor changing patterns in forest cover loss and human encroachment on previously wild areas that allows for better prediction of zoonotic disease emergence. For example, the Moderate Resolution Imaging Spectroradiometer (MODIS) sensors onboard the US Aqua and Terra satellites offer atmosphere, land, cryosphere, and ocean products that are used in several user communities. MODIS indicator data sets have been so successful that they do not require additional remote sensing analysis; they can be used directly in predictive models. Some EO satellite systems offer ARD (i.e. pre-processed images) and related information products derived from the raw data stream generated by the satellite instruments and the use of algorithms.

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Wei, Su-Huai. „ELECTRONIC STRUCTURE OF II-VI SEMICONDUCTORS AND THEIR ALLOYS“. In II-VI Semiconductor Compounds, 71–101. WORLD SCIENTIFIC, 1993. http://dx.doi.org/10.1142/9789814439770_0004.

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„Systems Based on HgSe“. In Quaternary Alloys Based on II - VI Semiconductors, 440–89. CRC Press, 2014. http://dx.doi.org/10.1201/b17523-10.

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„Systems Based on HgTe“. In Quaternary Alloys Based on II - VI Semiconductors, 490–505. CRC Press, 2014. http://dx.doi.org/10.1201/b17523-11.

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Konferenzberichte zum Thema "II-VI alloys"

Menendez, Jose. „Raman Scattering In II-VI Semiconductor Alloys And Superlattices“. In OE/LASE '89, herausgegeben von Fran Adar, James E. Griffiths und Jeremy M. Lerner. SPIE, 1989. http://dx.doi.org/10.1117/12.951573.

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Lin, Yan-Cheng, Wu-Ching Chou, Jen-Inn Chyi und Tooru Tanaka. „Carrier dynamics in dilute II-VI oxide highly mismatched alloys“. In SPIE OPTO, herausgegeben von Ferechteh H. Teherani, David C. Look und David J. Rogers. SPIE, 2014. http://dx.doi.org/10.1117/12.2039837.

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Parikh, Anuja, Jian Li, Jie Chen, S. Marsillac und R. W. Collins. „Optical analysis of II–VI alloys and structures for tandem PV“. In 2008 33rd IEEE Photovolatic Specialists Conference (PVSC). IEEE, 2008. http://dx.doi.org/10.1109/pvsc.2008.4922538.

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Kishi, Ayaka, Masato Oda und Yuzo Shinozuka. „Electronic states of III–V and II–VI alloys calculated by IQB theory“. In 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)]. IEEE, 2016. http://dx.doi.org/10.1109/iciprm.2016.7528680.

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Shan, W., W. Walukiewicz, Kin M. Yu, Joel W. Ager III, Junqiao Wu, Jeffrey W. Beeman, M. A. Scapulla et al. „Effect of oxygen on the electronic band structure of II-O-VI alloys“. In Integrated Optoelectronic Devices 2004, herausgegeben von Marek Osinski, Hiroshi Amano und Fritz Henneberger. SPIE, 2004. http://dx.doi.org/10.1117/12.529297.

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Tamargo, Maria C., Ning Dai, Abdullah Cavus, Rhonda Dzakpasu, Wojciech Krystek, Fred H. Pollak, Alph F. Semendy et al. „Growth of wide bandgap II-VI alloys on InP substrates by molecular beam epitaxy“. In Photonics for Industrial Applications, herausgegeben von Robert L. Gunshor und Arto V. Nurmikko. SPIE, 1994. http://dx.doi.org/10.1117/12.197267.

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Nurmikko, Arto, S. K. Chang, D. Lee, A. Mysyrowicz, Q. Fu, L. Kolodziejski und R. Gunshor. „Excitons and nonlinear optical effects in II-VI compound semiconductor quantum wells“. In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1987. http://dx.doi.org/10.1364/oam.1987.mr4.

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Methods of advanced epitaxy are now yielding versatile microstructures based on II-VI compound semiconductors. For wider gap materials in this family, excitonic aspects frequently dominate optical properties near the lowest interband transitions. We review some recent developments with CdTe- and ZnSe-based materials where associated alloys such as (Cd, Mn)Te or (Zn, Mn)Se permit the additional manipulation of lower dimensional excitons in layered structures.

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Reich, Carey, Arthur Onno, Walajabad S. Sampath und Zachary C. Holman. „Optical Characterization of Ternary Element Loss during Co-Chloride Passivation of Polycrystalline II-VI Wide-Bandgap Alloys“. In 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC). IEEE, 2019. http://dx.doi.org/10.1109/pvsc40753.2019.8980642.

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Basov, N. G., E. M. Dianov, V. I. Kozlovsky, A. B. Krysa, A. S. Nasibov, Yu M. Popov, A. M. Prokhorov, P. A. Trubenko und E. A. Shcherbakov. „Blue-Green Electron Beam Pumped Vertical-Cavity Surface-Emitting Laser Using MBE Grown Modulated ZnCdSe/ZnSe Superlattice“. In Semiconductor Lasers: Advanced Devices and Applications. Washington, D.C.: Optica Publishing Group, 1995. http://dx.doi.org/10.1364/slada.1995.tud.1.

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The use of a broad-bandgap II-VI semiconductors and their ternary and quaternary alloys for vertical-cavity surface-emitting laser (VCSEL) fabrication open a new additional possibilities for their design and applications. In particular, one of the promising using is the realization of a large screen color high definition TV (HDTV) laser projection systems, and flat panel color displays [1,2]. One of the main advantages of the II-VI VCSEL's, in this case, is the possibility of the full color HDTV laser screen creation based only on this materials. The bulk II-VI compounds were used recently for the first successful demonstration of the laser cathode ray tube (LCRT) and color laser TV system [3]. However, one of the limitations of this scheme was the sufficiently high E-beam current threshold, in particular, for the room-temperature operation.

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Kukimoto, Hiroshi. „Overview - Blue-Green Semiconductor LED/Laser Work in Japan“. In Compact Blue-Green Lasers. Washington, D.C.: Optica Publishing Group, 1992. http://dx.doi.org/10.1364/cbgl.1992.thc2.

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The research in Japan on the wide-bandgap materials for short-wavelength light emitting devices based on modem growth techniques of MOVPE and MBE started in early 1980s. The first attempt to organize a cooperative research system for wide-gap semiconductors in Japan can be traced back to the year 1984, when about 20 university research groups which had already been engaged in research on wide-gap II-VI materials gathered and started to make plans for joint research. This was followed by a three-year period research project on the property control of compound semiconductors, especially of II-VI, wide-gap III-V and I-III-VI2 materials, within a priority area research program for "New Functionality Materials - Design, Preparation and Control", which started in 1987 under support of the Ministry of Education, Science and Culture. It was renewed in 1990 as an advanced project for additional three years, and since then it has been running with emphasis on atomic-scale control of crystal growth, control of localized electronic states, creation of new optical functionality, quantum structures and new properties, and control of material properties for new optical devices. Under the project, the growth of wide-gap II-VIs, especially of ZnSe and related alloys and superlattices has been very actively studied in many university laboratories.

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Berichte der Organisationen zum Thema "II-VI alloys"

Compaan, A. D., R. Collins, V. G. Karpov und D. Giolando. Sputtered II-VI Alloys and Structures forTandem PV: Final Subcontract Report, 9 December 2003 - 30 July 2007. Office of Scientific and Technical Information (OSTI), September 2008. http://dx.doi.org/10.2172/938561.

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Penning, Nehle, Rachel Crossdale, Indre Genelyte, Natalia Krygowska-Nowak, Anna Urbaniak, Jolanta Perek-Białas und Monika Reichert. EIWO’s methodological approaches: A field report of the qualitative interviews in EIWO project III. Linköping University Electronic Press, März 2023. http://dx.doi.org/10.3384/9789180750585.

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This field report provides detailed information on the methodological approach as well as on the process of data collection and analysis in EIWO project III – “Mechanisms and Origins of Late Working Life Exclusion”. EIWO project III is part of the qualitative part of the EIWO programme and is – together with EIWO project VI, VII, and VIII from phase II – one of the four projects in which primary data is collected. EIWO uses a mixed-methods approach in its nine sub-projects, so that quantitative and qualitative methods are used in combination to investigate – from a life course perspective – the topic of late working life and the potential of extension of working lives on different levels (micro, meso and macro level). Due to the different methodological approaches, results from some projects provide evidence for further investigations in other sub-projects, whereby, for example, results of the qualitative investigations can be validated using large data sets. In projects in the field of life course research, a mixed-methods approach is widely used because it allows for a detailed investigation of the structural, institutional and individual factors influencing the life course. EIWO project III focuses in particular on the micro level by taking the perspective of individuals and thus provides a basis on which quantitative analyses, e.g. in EIWO project IV, can be built on. “The main aims of project III are to analyse the nature and sources of inequalities in late working life employment/retirement and to identify individual/family responses and coping strategies” (Application EIWO programme). Based on these aims, the following research questions were formulated for EIWO project III: What events and circumstances can be identified over the life course that lead to social inequalities/exclusion in late working life employment from the individual perspective? What are the explanatory mechanisms? How are exclusion risks and inequalities assessed on the individual level in late working life? Do persons experience social inequalities/exclusion? If they experience exclusion/inequalities: What coping strategies are/were used to reduce inequalities/exclusion? What can be learned from individual responses as to how meso-level organisational policies and macro-level social policies help or hinder transitions? In the following, it will be described why a qualitative research approach was chosen for this project and what characterises this approach. Then, the research instruments and the inclusion criteria for the sample will be explained. The third chapter illustrates the field phase, including the recruitment phase, the final composition of the sample and the conduct of the interviews, as well as challenges that arose during the field phase and the chosen approaches. Finally, the data analysis method is discussed and the report is concluded with a short summary.

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