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Dissertationen zum Thema „Hot carrier solar cell“

Autor: Grafiati

Veröffentlicht am 11. Januar 2025

Zuletzt aktualisiert am 31. Juli 2025

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1

Vezin, Thomas. "Uneven temperatures in hot carrier solar cells : optical characterization and device simulation." Electronic Thesis or Diss., Institut polytechnique de Paris, 2024. http://www.theses.fr/2024IPPAX061.

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Les cellules solaires à porteurs chauds promettent des rendements théoriques supérieurs à 66%. N´néanmoins, les dispositifs réels ont des rendements nettement inférieurs, de l’ordre de 10%. Pour comprendre cette différence, il est nécessaire de complexifier notre compréhension des cellules solaires à porteurs chauds en introduisant des effets non-idéaux. Dans cette thèse, nous étudions deux effets ≪ d’écart de température ≫: (i) l’existence d’un gradient de température dans l’absorbeur (température inhomogène) et (ii) l’existence de deux températures différentes pour les électrons et les trous

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2

Rodière, Jean. "Optoelectronic characterization of hot carriers solar cells absorbers." Thesis, Paris 6, 2014. http://www.theses.fr/2014PA066703/document.

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La cellule photovoltaïque à porteurs chauds est un dispositif de conversion de l’énergie solaire en énergie électrique dont les rendements théoriques approchent les 86%. Additionnellement à une cellule photovoltaïque standard, ce dispositif permet de convertir l’excédent d’énergie cinétique des porteurs photogénérés, en énergie électrique. Pour cela, le phénomène de thermalisation doit être réduit et des contacts électriques sélectifs en énergie ajoutés. Afin de déterminer les performances potentielles des absorbeurs, tout en surmontant le défi de fabrication des contacts électriques sélectifs

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Rodière, Jean. "Optoelectronic characterization of hot carriers solar cells absorbers." Electronic Thesis or Diss., Paris 6, 2014. https://accesdistant.sorbonne-universite.fr/login?url=https://theses-intra.sorbonne-universite.fr/2014PA066703.pdf.

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La cellule photovoltaïque à porteurs chauds est un dispositif de conversion de l’énergie solaire en énergie électrique dont les rendements théoriques approchent les 86%. Additionnellement à une cellule photovoltaïque standard, ce dispositif permet de convertir l’excédent d’énergie cinétique des porteurs photogénérés, en énergie électrique. Pour cela, le phénomène de thermalisation doit être réduit et des contacts électriques sélectifs en énergie ajoutés. Afin de déterminer les performances potentielles des absorbeurs, tout en surmontant le défi de fabrication des contacts électriques sélectifs

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4

Jiang, Chu-Wei School of Photovoltaic Engineering UNSW. "Theoretical and experimental study of energy selective contacts for hot carrier solar cells and extensions to tandem cells." Awarded by:University of New South Wales. School of Photovoltaic Engineering, 2005. http://handle.unsw.edu.au/1959.4/23065.

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Photovoltaics is currently the fastest growing energy source in the world. Increasing the conversion efficiency towards the thermodynamic limits is the trend in research development. ???Third generation??? photovoltaics involves the investigation of ideas that may achieve this goal. Among the third generation concepts, the tandem cell structure has experimentally proven to have conversion efficiencies higher than a standard p-n junction solar cell. The alternative hot carrier solar cell design is one of the most elegant approaches. Energy selective contacts are crucial elements for the operati

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Zhang, Qingrong. "Hot Carriers in Thin-film Absorbers." Thesis, KTH, Skolan för industriell teknik och management (ITM), 2021. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-303146.

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Solar energy is one of the most promising sources of confronting the energy crisis. And hot carrier solar cell can be the future to increase the efficiency of solar cells to exceed to the theoretical efficiency limit, Shockley-Queisser limit. After theoretical understanding of some essential aspects of hot carrier solar cell, to better understand the properties of hot carriers and the thermalization mechanisms behind it, analysis is conducted based on the photoluminescence spectra of GaAs thin-film absorber samples with different thicknesses. According to the results of the analysis, informati

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Behaghel, Benoît. "Fabrication and investigation of III-V quantum structured solar cells with Fabry-Pérot cavity and nanophotonics in order to explore high-efficiency photovoltaic concepts : towards an intermediate band assisted hot carrier solar cell." Thesis, Paris 6, 2017. http://www.theses.fr/2017PA066729/document.

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Le photovoltaïque (PV) s’est imposé comme un acteur majeur de l’énergie. L’innovation dans ce domaine passera sans doute par le PV à haut rendement sur des couches minces flexibles et légères permettant son déploiement dans les applications mobiles. Cette thèse étudie le développement de cellules solaires III-V à structures quantiques visant des concepts PV hauts rendements tels les cellules solaires à bande intermédiaire (IBSC). Ces IBSC se sont montrés limités du fait de l’échappement thermique des porteurs à température ambiante ainsi que la faible absorption optique sous le gap. Nous avons

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Behaghel, Benoît. "Fabrication and investigation of III-V quantum structured solar cells with Fabry-Pérot cavity and nanophotonics in order to explore high-efficiency photovoltaic concepts : towards an intermediate band assisted hot carrier solar cell." Electronic Thesis or Diss., Paris 6, 2017. http://www.theses.fr/2017PA066729.

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Le photovoltaïque (PV) s’est imposé comme un acteur majeur de l’énergie. L’innovation dans ce domaine passera sans doute par le PV à haut rendement sur des couches minces flexibles et légères permettant son déploiement dans les applications mobiles. Cette thèse étudie le développement de cellules solaires III-V à structures quantiques visant des concepts PV hauts rendements tels les cellules solaires à bande intermédiaire (IBSC). Ces IBSC se sont montrés limités du fait de l’échappement thermique des porteurs à température ambiante ainsi que la faible absorption optique sous le gap. Nous avons

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Hirst, Louise. "A spectroscopic study of strain-balanced InGaAs/GaAsP quantum well structures as absorber materials for hot carrier solar cells." Thesis, Imperial College London, 2012. http://hdl.handle.net/10044/1/10474.

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In this thesis, five intrinsic loss mechanisms which fundamentally limit solar energy conversion efficiency are identified. The three dominant mechanisms are thermalisation loss, below Eg loss and Boltzmann loss. Targeting these three losses through alternative device design is the only way substantial efficiency enhancement might be achieved. The hot carrier solar cell targets these dominant mechanisms and hence has a theoretical limiting efficiency, under maximum solar concentration, in excess of 80%. Despite clear efficiency advantages, a hot carrier solar cell has never been experimentally

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Le, bris Arthur. "Etude de faisabilité d'un dispositif photovoltaïque à porteurs chauds." Phd thesis, Ecole Centrale Paris, 2011. http://tel.archives-ouvertes.fr/tel-00646713.

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La cellule photovoltaïque à porteurs chauds se caractérise par une population électronique hors équilibre thermique avec le réseau, ce qui se traduit par une température électronique supérieure à la température du matériau. Il devient alors possible de récupérer non seulement l'énergie potentielle des porteurs, mais également leur énergie cinétique, et donc d'extraire un surcroît de puissance qui n'est pas exploitée dans des cellules conventionnelles. Cela permet d'atteindre des rendements potentiels proches de la limite thermodynamique. L'extraction des porteurs hors équilibre se fait au moye

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Ho, Carr Hoi Yi. "Toward better performing organic solar cells: impact of charge carrier transport and electronic interactions in bulk heterojunction blends /Ho Hoi Yi, Carr." HKBU Institutional Repository, 2017. https://repository.hkbu.edu.hk/etd_oa/359.

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Organic photovoltaic (OPV) is an exciting energy harvesting technique. Although its power conversion efficiency (PCE) now exceeds 10% in a research laboratory, the processing window of an OPV cell is still narrow. A fundamental understanding of the OPV materials is desired. This thesis presents the charge carrier transport properties and electronic interactions in the bulk heterojunction (BHJ) active layer of OPV cells. They were found to be well correlated with OPV device performances. Space-charge-limited current (SCLC) measurements and admittance spectroscopy (AS) were employed to study the

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Mills, Ted Jonathan. "Direct imaging of minority charge carrier transport in triple junction solar cell layers." Thesis, Monterey, Calif. : Naval Postgraduate School, 2006. http://bosun.nps.edu/uhtbin/hyperion.exe/06Dec%5FMills.pdf.

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Thesis (M.S. in Applied Physics)--Naval Postgraduate School, December 2006.<br>Thesis Advisor(s): Nancy M. Haegel, Sherif Michael. "December 2006." Includes bibliographical references (p. 63-64). Also available in print.

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Lau, Yin Ping. "Si/CdTe heterojunction fabricated by closed hot wall system." HKBU Institutional Repository, 1995. http://repository.hkbu.edu.hk/etd_ra/44.

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Singh, Surjeet. "Mathematical Modeling of a P-N Junction Solar Cell using the Transport Equations." Wright State University / OhioLINK, 2017. http://rave.ohiolink.edu/etdc/view?acc_num=wright1496054495555896.

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14

Hsu, Chih-An. "Absorber and Window Study – CdSexTe1-x/CdTe Thin Film Solar Cells." Scholar Commons, 2019. https://scholarcommons.usf.edu/etd/7813.

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CdTe an II-VI semiconductor has been a leading thin film photovoltaic material due to its near ideal bandgap and high absorption coefficient [1]. The typical thin film CdTe solar cells have been of the superstrate configuration with CdS (Eg-2.42eV) as the n-type heterojunction partner. Due to the relatively narrow bandgap of CdS, a wider bandgap n-type window layer has recently emerged as a promising substitute: alloys of MgyZn1-yO have been successfully used as the emitter or window layer. The benefits in the usage of MgyZn1-yO (MZO) are its tunable bandgap and wide optical spectrum on opt

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Mori, Daisuke. "Development of Polymer Blend Solar Cells Composed of Conjugated Donor and Acceptor Polymers." 京都大学 (Kyoto University), 2015. http://hdl.handle.net/2433/199331.

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Kotsedi, Lebogang. "Fabrication and characterization of a solar cell using an aluminium p-doped layer in the hot-wire chemical vapour deposition process." Thesis, University of the Western Cape, 2010. http://etd.uwc.ac.za/index.php?module=etd&action=viewtitle&id=gen8Srv25Nme4_1349_1363785866.

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<p>When the amorphous silicon (a-Si) dangling bonds are bonded to hydrogen the concentration of the dangling bond is decreased. The resulting film is called hydrogenated amorphous silicon (a-Si:H). The reduction in the dangling bonds concentration improves the optoelectrical properties of the film. The improved properties of a-Si:H makes it possible to manufacture electronic devices including a solar cell. A solar cell device based on the hydrogenated amorphous silicon (a-Si:H) was fabricated using the Hot-Wire Chemical Vapour Deposition (HWCVD). When an n-i-p solar cell configuration is grown

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Yang, Yiqun. "Integration of photosynthetic pigment-protein complexes in dye sensitized solar cells towards plasmonic-enhanced biophotovoltaics." Diss., Kansas State University, 2016. http://hdl.handle.net/2097/32857.

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Doctor of Philosophy<br>Department of Chemistry<br>Jun Li<br>Solar energy as a sustainable resource is a promising alternative to fossil fuels to solve the tremendous global energy crisis. Development of three generation of solar cells has promoted the best sunlight to electricity conversion efficiency above 40%. However, the most efficient solar cells rely on expensive nonsustainable raw materials in device fabrication. There is a trend to develop cost-effective biophotovoltaics that combines natural photosynthetic systems into artificial energy conversion devices such as dye sensitized solar

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森, 大輔. "電子ドナーおよびアクセプター性共役高分子からなる高分子ブレンド薄膜太陽電池の開発". Kyoto University, 2015. http://hdl.handle.net/2433/199528.

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Khan, Imran Suhrid. "In Situ Extrinsic Doping of CdTe Thin Films for Photovoltaic Applications." Scholar Commons, 2018. http://scholarcommons.usf.edu/etd/7177.

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The Cadmium Telluride thin film solar cell is one of the leading photovoltaic technologies. Efficiency improvements in the past decade made it a very attractive and practical source of renewable energy. Considering the theoretical limit, there is still room for improvement, especially the cell’s open circuit voltage (VOC). To improve VOC, the p-type carrier concentration and minority carrier lifetime of the CdTe absorber needs to be improved. Both these parameters are directly related to the point defect distribution of the semiconductor, which is a function of deposition stoichiometry, dopant

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Benner, Frank. "Herstellung, Charakterisierung und Modellierung dünner aluminium(III)-oxidbasierter Passivierungsschichten für Anwendungen in der Photovoltaik." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2016. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-205353.

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Hocheffiziente Solarzellen beruhen auf der exzellenten Oberflächenpassivierung, die minimale Rekombinationsverluste gewährleistet. Innerhalb des letzten Jahrzehnts wurde Al2O3 in der Photovoltaikindustrie zum bevorzugten Material für p-leitendes Si. Unterschiedliche Abscheidetechnologien erreichten Passivierungen mit effektiven Minoritätsladungsträgerlebensdauern nahe der AUGER–Grenze. Die ausgezeichnete Passivierungswirkung von Al2O3wird zwei Effekten zugeschrieben: Einerseits werden Si−SiO2-grenzflächennahe Rekombinationszentren passiviert, wenn Wasserstoff, beispielsweise aus der Al2O3-Schi

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GOUTSOU, PERRAKI VASSILIKI. "Contribution a l'etude des cellules solaires epitaxiees sur si metallurgique." Paris 7, 1988. http://www.theses.fr/1988PA077138.

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Des photopiles p**(+)pn**(+) ont ete fabriquees par depot epitaxique d'une couche mince de si ultrapur sur un substrat sommairement purifie (umg) p**(+), puis formation de la couche n**(+), des contacts metalliques et de la couche antireflet par serigraphie. Mesures de la longueur de diffusion ln (methode lbic) et de la reponse spectrale des cellules

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Huang, Shih-Han, and 黃詩涵. "Carrier Dynamics in Materials for Solar Cell Applications." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/10327427225059706622.

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碩士<br>國立交通大學<br>電子物理系所<br>100<br>Carrier dynamics in materials for solar cell applications have been investigated by time-resolved photoluminescence. One is InAs self-assembled quantum dots (QDs) covered with a thin AlxGa1-xAs0.8Sb0.2 layer. There is a type I-like transition in type II InAs/GaAsSb QDs due to the recombination of electrons from QDs and holes residing in extended levels composed by the capping layer and the QDs, which is activated by thermal excitation. With the increasing Al content, a blueshift in the QD emission peak and a shortening of the PL decay time are observed, indicat

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Chen, Chih-Wei, and 陳致瑋. "Improving carrier collection with graded InGaN based solar cell." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/2876fq.

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碩士<br>國立中央大學<br>光電科學與工程學系<br>105<br>The tunable band gaps of InGaN, spanning from 3.4eV (GaN) to 0.7eV (InN), make the ternary alloy an attractive material system for photovoltaic devices. Although the absorption of nearly full solar spectrum is theoretically possible with the multi-junction containing properly selected indium compositions, the measured conversion efficiencies of InGaN-based solar cells are typically below 3 %.The unsatisfactory performances can be attributed to many material issues such as the trade-off between long-wavelength absorption and high material qualities, insuffici

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Shao-JungLu and 呂紹榮. "Influences of the Carrier Transport Layer on the Performances of Perovskite Solar Cell." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/h87f87.

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Hu, Hanlin. "Aggregation of Organic Semiconductors and Its Influence on Carrier Transport and Solar Cell Performance." Diss., 2017. http://hdl.handle.net/10754/625509.

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Photovoltaic technology based on solution-processable organic solar cells (OSCs) provides a promising route towards a low-cost strategy to address the sharply increasing energy demands worldwide. However, up to date, the vast majority of solar cell reports have been based on spin-cast BHJ layers. Spin coating is not compatible with high speed and scalable coating processes, such as blade-coating and slot-die coating, which require the nanoscale morphology to be reproduced in scalable coating methods. And tolerance for thicker BHJ films would also facilitate high speed scalable coating. In the

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Wu, Bing-Rui, and 吳秉叡. "Fabrication of Silicon Thin Films Using Hot-Wire CVD for Solar Cell Applications." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/hq22f9.

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博士<br>國立中興大學<br>材料科學與工程學系所<br>99<br>Hot-wire chemical vapor deposition (HWCVD) is a promising technique for depositing device-quality thin amorphous, polycrystalline, and epitaxial silicon films at lower temperatures and higher deposition rates. With this technique, deposition species are generated by decomposition reaction of the source gases on the heated filament. Comparing with conventional plasma-enhanced CVD, main advantages of HWCVD are as follows: (1) low deposition temperature, (2) high deposition rate, (3) low equipment cost, (4) large area deposition, (5) high gas utilization, (6) a

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Shih-Chen, Wang, and 王世辰. "Investigation on a New Embedded Flash Memory Cell Using a SPICE-compatible Hot Carrier Injection Model." Thesis, 2003. http://ndltd.ncl.edu.tw/handle/71112768521637791024.

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碩士<br>國立清華大學<br>電子工程研究所<br>91<br>A new embedded-flash-memory cell consisting of two transistors fabricated by a standard CMOS process has been proposed by our lab. The cell is verified with good program and erase characteristics, but further investigation are not completed yet. Owing to the full compatibility with the standard CMOS process, such investigations can be fulfilled by SPICE simulations. Though accurate device characteristics is already obtained by the BSIM device model, but the lack of a sub-circuit model of the gate current injection mechanisms prohibits further studies of the cel

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Hsieh, Pingchen, and 謝秉宸. "Preparation and characterization of silicon-based thin film solar cell by hot-wire CVD." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/65708051191071739257.

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碩士<br>明道大學<br>材料科學與工程學系碩士班<br>100<br>In this study, a self-developed in-line hotwire chemical vapor deposition (HWCVD) system was used for preparing amorphous silicon films for thin-film solar cell applications. The gas flow rate, filament temperature and substrate temperature were varied during the deposition process. The optical, electrical and structural properties of the films were measured using UV-vis spectrometer, scanning electron microscope, Raman spectrometer and surface profiler. The experiment results showed that a film with the best properties of band gap of 1.69 eV, photosens

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Lin, Hong-Lin, and 林宏霖. "Study of Perovskite Solar Cell Carrier Transporting Layers and Photovoltaics with Lead-free Active Layers." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/srj9et.

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Lee, Dong-Lung, and 李東隆. "The Improvement of Hot Carrier Reliability Issues on Embeddable Low Power DINOR Flash Cell With STI Structure." Thesis, 2001. http://ndltd.ncl.edu.tw/handle/81458271778992513299.

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碩士<br>國立臺北科技大學<br>機電整合研究所<br>89<br>Recently, due to the semiconductor element fabrication technology has developed very rapid in flash memory technology. It has been widely employed in non-volatile semiconductor memories such as: IC card、hand-held Computer、Cameras and so on. The flash memory to act for hard disk drives for data storage must meet the requirement of small size, and low power consumption. For an advanced flash memory, the professor will focus on studying the threshold voltage shift, data retention time, P/E endurance, programming efficiency, erase speed, and so on. The flash memo

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Sio, Hang Cheong. "Carrier Recombination in Multicrystalline Silicon: A Study using Photoluminescence Imaging." Phd thesis, 2015. http://hdl.handle.net/1885/101930.

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This thesis applies photoluminescence imaging technique to study various carrier recombination mechanisms in multicrystalline silicon materials. One emphasis of the work has been recombination at grain boundaries, which is one of the limiting factors for the performance of multicrystalline silicon solar cells. An approach for quantifying the recombination activities of a grain boundary in terms of its effective surface recombination velocity, based on the photoluminescence intensity profile across the grain boundary, is developed. The approach is ap

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Lien, Shui-Yang, and 連水養. "Fabrication and Characterization of Silicon Thin Films Using Hot-Wire CVD for Solar Cell Applications." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/71634228508292105093.

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博士<br>國立中興大學<br>材料工程學系所<br>95<br>Hot-Wire Chemical Vapor Deposition (Hot-Wire CVD) is a promising technique for deposition of amorphous, microcrystalline and polycrystalline silicon thin films for photovoltaic applications. The main advantages of Hot-Wire CVD over PE-CVD, which is currently the most widespread applied technique to deposit thin silicon films in industry, are (1) absence of ion bombardment, (2) high deposition rate, (3) low equipment cost and (4) high gas utilization. Possible issues in Hot-Wire CVD are the control of the substrate temperature and aging of the filaments. This th

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Mao, Hsin-Yuan, and 毛信元. "Hot-Wire Chemical Vapor Deposition of Si-Based Thin Films for Heterojunction Solar Cell Applications." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/48192803861965128807.

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博士<br>國立中興大學<br>材料科學與工程學系所<br>100<br>Hot-wire chemical vapor deposition (HWCVD) is one of the semiconductor fabrication processes to grow thin film materials. The HWCVD system is composed of vacuum system, gas flow controls, and catalytic wires where Tungsten, Tantalum or Iridium are often used. In a typical HWCVD process, the temperature of wire can increase to 1500~2000 by increasing the DC current. The source gases are entered into the vacuum chamber and decomposed (or catalyzed) by the high temperature wires. The substrate is exposed to one or more volatile precursors which react or decomp

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Chiu, Shih-Hsuan, and 邱世璿. "Fabrication of Silicon Carbide Thin Films Using Hot-Wire CVD for Solar-Cell Intrinsic Layer Applications." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/31541904960815976314.

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碩士<br>國立中興大學<br>材料科學與工程學系所<br>98<br>In this thesis, silicon carbide (SiC) thin films prepared by hot-wire chemical vapor deposition (HWCVD) system was investigated for absorption layer of thin-film solar cells applications. During the deposition, the gas flow rate ratios of SiH4 and CH4 and H2 dilution were varied to study the effects of process conditions on the optoelectronic characteristics and microstructures of SiC thin films. The optimized process conditions of SiC thin film deposition were used to fabricate thin film solar cells. Details of material characteristics of SiC thin films wer

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Liao, Cheng-Yuan, and 廖正淵. "Numerical Simulation on Carrier Transport in a Thin-Film Amorphous Silicon Solar Cell with a Metal Grating." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/82379087890152825752.

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碩士<br>國立臺灣大學<br>光電工程學研究所<br>100<br>The carrier transport of a thin-film amorphous silicon (a-Si) solar cell with a metal grating is numerically simulated, for a given generation rate in the solar cell. The solar cell structure consists of three parts: an ITO layer as the top contact, an a-Si layer and a metal Ag grating layer as the back contact. It is a two-dimensional problem to simulate the carrier transport in the a-Si region. Using the Gummel iteration method, we get the self-consistent solutions of the electron and hole continuity equations and the Poisson equation for the entire region

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Hsieh, Hsin-Yu, and 謝昕佑. "Fabrication and characterization of p-type silicon films using hot-wire chemical vapor deposition for heterojunction solar cell applications." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/qg335a.

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碩士<br>國立中興大學<br>材料科學與工程學系所<br>99<br>The silicon heterojunction solar cell (SHJPV) has received much attention because of its high conversion efficiency that could be achieved using a simple structure and a low process temperature. In this thesis, the device-quality p-type microcrystalline silicon thin film (p-uc-Si) was fabricated by hot-wire chemical vapor deposition (HWCVD) technique and the effects of wafer specification on the SHJPV cell performance were also investigated. 　　In order to optimize the film quality, the HWCVD p-uc-Si films were fabricated under various hydrogen flow ratios. T

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Chen, Chang-Shian, and 陳昶憲. "The Effects of the Photo-Generation Carrier Distribution on the Properties of Amorphous Si p-i-n thin film Solar Cell." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/52379296585742891173.

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碩士<br>銘傳大學<br>電子工程學系碩士班<br>100<br>In this paper, theoretical efficiencies for amorphous Si ITO/p/i/n and ITO/p/i/n/Al solar cell are presented by solving the carrier transport equations including optical properties of the cell. Using the optical admittance method including the interference effect, the distribution of the photo-generation carriers in the solar cell under air mass 1.5 global irradiance spectra were obtained numerically. And the carrier distribution in i-layer of solar cell could be treated approximately as a function of exponential decay with a constant bias. First, the surface

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Lebogang, Kotsedi. "Fabrication and characterization of a solar cell using an aluminium p-doped layer in the hot-wire chemical vapour deposition process." Thesis, 2010. http://hdl.handle.net/11394/3441.

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Philosophiae Doctor - PhD<br>When the amorphous silicon (a-Si) dangling bonds are bonded to hydrogen the concentration of the dangling bond is decreased. The resulting film is called hydrogenated amorphous silicon (a-Si:H). The reduction in the dangling bonds concentration improves the optoelectrical properties of the film. The improved properties of a-Si:H makes it possible to manufacture electronic devices including a solar cell.A solar cell device based on the hydrogenated amorphous silicon (a-Si:H) was fabricated using the Hot-Wire Chemical Vapour Deposition (HWCVD). When an n-i-p solar ce

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"A Unified 2D Solver for Modeling Carrier and Defect Dynamics in Electronic and Photovoltaic Devices." Doctoral diss., 2019. http://hdl.handle.net/2286/R.I.55540.

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abstract: Semiconductor devices often face reliability issues due to their operational con- ditions causing performance degradation over time. One of the root causes of such degradation is due to point defect dynamics and time dependent changes in their chemical nature. Previously developed Unified Solver was successful in explaining the copper (Cu) metastability issues in cadmium telluride (CdTe) solar cells. The point defect formalism employed there could not be extended to chlorine or arsenic due to numerical instabilities with the dopant chemical reactions. To overcome these shortco

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Williams, Kenrick John. "Electron transfer in sensitized TiO₂ systems studied by time resolved surface second hermonic generation." Thesis, 2012. http://hdl.handle.net/2152/ETD-UT-2012-05-5790.

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Obtaining abundant, clean, sustainable energy has become an increasingly large need globally. To date, solar cells have had a limited impact in meeting energy demands. This is primarily due to their relatively high cost and low power conversion efficiencies. Sensitized solar cells, or Grätzel cells, have the potential for being made with low cost materials, and achieving power conversion efficiency high enough to economically compete with fossil fuels. Understanding the dynamics of charge carriers as they separate at the interface of the light absorbing donor and their semiconducting accep

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Lin, Yang-You, and 林沇佑. "The Impact on Photovoltaic Efficiency with Regards to Defect Densities of Amorphous Silicon Layers and Carrier Recombination Velocity at Interfaces in a Heterojunction Solar Cell Using Silvaco ATLAS." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/15593378593498140236.

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碩士<br>大葉大學<br>電機工程學系<br>98<br>This study involves the novel heterojunction with intrinsic thin layer (HIT) solar cell structure. Combining the advantages of both crystalline silicon and amorphous silicon, a new structure of silicon-based solar cell was proposed - the heterojunction with an intrinsic thin layer (HIT) solar cell. It has high stability and large light absorption coefficient. It is manufactured under low temperature deposit process, which results in a low cost thin film HIT solar cell with high conversion efficiency. The influence of various layer materials and interfaces on the p

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Benner, Frank. "Herstellung, Charakterisierung und Modellierung dünner aluminium(III)-oxidbasierter Passivierungsschichten für Anwendungen in der Photovoltaik." Doctoral thesis, 2014. https://tud.qucosa.de/id/qucosa%3A29635.

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Hocheffiziente Solarzellen beruhen auf der exzellenten Oberflächenpassivierung, die minimale Rekombinationsverluste gewährleistet. Innerhalb des letzten Jahrzehnts wurde Al2O3 in der Photovoltaikindustrie zum bevorzugten Material für p-leitendes Si. Unterschiedliche Abscheidetechnologien erreichten Passivierungen mit effektiven Minoritätsladungsträgerlebensdauern nahe der AUGER–Grenze. Die ausgezeichnete Passivierungswirkung von Al2O3wird zwei Effekten zugeschrieben: Einerseits werden Si−SiO2-grenzflächennahe Rekombinationszentren passiviert, wenn Wasserstoff, beispielsweise aus der Al2O3-Schi

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