Zeitschriftenartikel: „High temperature semiconductors“

1

TREW, R. J., und M. W. SHIN. „HIGH FREQUENCY, HIGH TEMPERATURE FIELD-EFFECT TRANSISTORS FABRICATED FROM WIDE BAND GAP SEMICONDUCTORS“. International Journal of High Speed Electronics and Systems 06, Nr. 01 (März 1995): 211–36. http://dx.doi.org/10.1142/s0129156495000067.

Der volle Inhalt der Quelle

Annotation:

Electronic and optical devices fabricated from wide band gap semiconductors have many properties ideal for high temperature, high frequency, high power, and radiation hard applications. Progress in wide band gap semiconductor materials growth has been impressive and high quality epitaxial layers are becoming available. Useful devices, particularly those fabricated from SiC, are rapidly approaching the commercialization stage. In particular, MESFETs (MEtal Semiconductor Field-Effect Transistors) fabricated from wide band gap semiconductors have the potential to be useful in microwave power amplifier and oscillator applications. In this work the microwave performance of MESFETs fabricated from SiC, GaN and semiconducting diamond is investigated with a theoretical simulator and the results compared to experimental measurements. Excellent agreement between the simulated and measured data is obtained. It is demonstrated that microwave power amplifiers fabricated from these semiconductors offer superior performance, particularly at elevated temperatures compared to similar components fabricated from the commonly employed GaAs MESFETs.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

2

Palmstrøm, Chris. „Epitaxial Heusler Alloys: New Materials for Semiconductor Spintronics“. MRS Bulletin 28, Nr. 10 (Oktober 2003): 725–28. http://dx.doi.org/10.1557/mrs2003.213.

Der volle Inhalt der Quelle

Annotation:

AbstractFerromagnetic materials that have Curie temperatures above room temperature, crystal structures and lattice matching compatible with compound semiconductors, and high spin polarizations show great promise for integration with semiconductor spintronics. Heusler alloys have crystal structures (fcc) and lattice parameters similar to many compound semiconductors, high spin polarization at the Fermi level, and high Curie temperatures. These properties make them particularly attractive for injectors and detectors of spin-polarized currents. This review discusses the progress and issues related to integrating full and half Heusler alloys into ferromagnetic compound semiconductor heterostructures.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

3

Ma, Xi Ying. „Study of the Electrical Properties of Monolayer MoS₂ Semiconductor“. Advanced Materials Research 651 (Januar 2013): 193–97. http://dx.doi.org/10.4028/www.scientific.net/amr.651.193.

Der volle Inhalt der Quelle

Annotation:

We present the study of the electrical properties of monolayer MoS2 in terms of semiconductor theory. The free electron and hole concentrations formulas in two-dimensional (2D) semiconductors have been developed based on three-dimensional (3D) semiconductors theory, and derived the intrinsic carrier concentration equation of 2D system. Using these equations, we simulated the intrinsic carrier concentration in monolayer MoS2 with temperature. The intrinsic carrier density in monolayer MoS2 increases exponentially with temperature, but it lows a few orders of magnitude than that of 3D semiconductor. It means that monolayer MoS2 based devices can operated at very high temperatures. Accordingly, the conductivity and resistivity were simulated for 2D MoS2, the former increases exponentially while the latter decreases with temperature or carrier concentration.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

4

WESSELS, B. W. „MAGNETORESISTANCE OF NARROW GAP MAGNETIC SEMICONDUCTOR HETEROJUNCTIONS“. SPIN 03, Nr. 04 (Dezember 2013): 1340011. http://dx.doi.org/10.1142/s2010324713400110.

Der volle Inhalt der Quelle

Annotation:

Narrow gap III–V semiconductors have been investigated for semiconductor spintronics. By alloying these semiconductors with manganese magnetic semiconductors result. Large magnetoresistance (MR) effects have been observed in narrow gap magnetic semiconductor p–n heterojunctions. The MR which is positive is attributed to spin selective carrier scattering. For an InMnAs / InAs heterojunction a diode MR of 2680% is observed at room temperature and high magnetic fields. This work indicates that highly spin-polarized magnetic semiconductor heterojunctions can be realized that operate at room temperature. Devices based on the MR include spin diodes and bipolar magnetic junction transistors. We utilize the diode MR states to create a binary logic family.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

5

Dezaki, Hikari, Meng Long Jing, Sundararajan Balasekaran, Tadao Tanabe und Yutaka Oyama. „Room Temperature Terahertz Emission via Intracenter Transition in Semiconductors“. Key Engineering Materials 500 (Januar 2012): 66–69. http://dx.doi.org/10.4028/www.scientific.net/kem.500.66.

Der volle Inhalt der Quelle

Annotation:

An efficient continuous wave (CW) THz source working at nominal room temperature is described. Optically pumped room temperature THz emission is observed from various kinds of semiconductor bulk crystals. In order to investigate the emission mechanism, temperature dependences of terahertz emission intensity in various semiconductors are measured. Semiconductor samples used are InSb, InSb:Ge, InAs, GaSb, Ge, and Si. From these results, it is shown that the temperature dependences of emission characteristics are different between direct and indirect transition semiconductors, and that the high resistive Ge is suitable for room temperature THz emitter via intracenter transitions excited by IR pump lasers.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

6

Guyenot, M., M. Reinold, Y. Maniar und M. Rittner. „Advanced wire bonding for high reliability and high temperature applications“. International Symposium on Microelectronics 2016, Nr. 1 (01.10.2016): 000214–18. http://dx.doi.org/10.4071/isom-2016-wa51.

Der volle Inhalt der Quelle

Annotation:

Abstract The next generation of switches for power electronic will be based on white band gap (WBG) semiconductor GaN or SiC. This materials supports higher switching current and high frequency. White band gap semiconductors enables higher application temperature. Certainly, high temperature capability is also to discuss in combination with high number of thermal cycles. For a frame module concept shows these paper a comparison of different joining techniques with the focus on the reliability issue on wire and ribbon bonding. Beside to the 1000 passive thermal cycles from −40°C to +125°C there are active thermals cycles for technology qualification required [3]. Depending on the application and mission profile a high thermal cycling capability is necessary. For this reason, new high temperature joining techniques for die attach, e.g. Silver sintering or diffusion soldering, were developed in the recent past [4]. All of this new joining techniques focusing on higher electrical, thermal and thermo-mechanical performance of power modules. By using an optimized metallization system for the WBG the numbers of thermal cycles can be increased and the maximum operating temperature advanced up to 300°C. In these new temperature regions silicon semiconductors will be substituted by WBG semiconductors. The present work shows an active power cycling capability of different wire and ribbon bonds and the failure mechanism will be discussed. A calculation model explained the reliability for the different wire diameter and the impact of bonding materials. This reliability calculation explain the thermo-mechanical effects and based on materials and geometry data and is not optimized for evidence. Through these physical background understanding more than 1.000.000 thermal cycles with a 150 K temperature swing from +30°C to +180°C are now possible. These is a the basic knowledge for a design for reliability based on current, mission profile and reliability optimization for future high end applications with wire or ribbon bonding technique.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

7

Zhao, Youyang, Charles Rinzler und Antoine Allanore. „Molten Semiconductors for High Temperature Thermoelectricity“. ECS Journal of Solid State Science and Technology 6, Nr. 3 (05.12.2016): N3010—N3016. http://dx.doi.org/10.1149/2.0031703jss.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

8

Chen, Sheng. „Theory And Application of Gallium Nitride Based Dilute Magnetic Semiconductors“. Highlights in Science, Engineering and Technology 81 (26.01.2024): 286–90. http://dx.doi.org/10.54097/26qm0041.

Der volle Inhalt der Quelle

Annotation:

Semiconductors are key components for the development of Industry 4.0 innovative technologies such as consumer electronics, data centers, intelligent new energy vehicles, and aerospace technology. Academic research on semiconductors can not only promote the development of electronics and electromagnetics, but also meet the demand for high-performance semiconductors in technological development. This paper provides a review of the theoretical and experimental research results on gallium nitride based diluted magnetic semiconductors, and prospects the future application prospects of gallium nitride based diluted magnetic semiconductors. This paper found that the theoretical prediction of gallium nitride based diluted magnetic semiconductors is generally believed to have good temperature conditions and advantages in thermal conductivity, electron mobility, breakdown voltage, and other aspects. The current experimental results also confirm that gallium nitride based diluted magnetic semiconductors can improve the limitations of semiconductors under room temperature conditions. This article believes that this semiconductor material has broad development potential in fields such as intelligent vehicles, aerospace, and cloud computing.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

9

Kappert, Holger, Sebastian Braun, Norbert Kordas, Stefan Dreiner und Rainer Kokozinski. „High Temperature GaN Gate Driver in SOI CMOS Technology“. Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2016, HiTEC (01.01.2016): 000112–15. http://dx.doi.org/10.4071/2016-hitec-112.

Der volle Inhalt der Quelle

Annotation:

Abstract Power electronics is a rapidly developing application area for high temperature electronics. Wide bandgap semiconductors have intrinsic advantages for high temperature operation due to the large bandgap in comparison to silicon based semiconductors. Especially GaN is a promising material for power semiconductors due to the possibility to process GaN on silicon carrier wafers, which results in lower device costs in comparison to SiC. In addition GaN provides higher switching frequencies and lower on-resistances of power devices. In combination these advantages enable the design of high performing, small size power modules operating at elevated temperatures. However, in order to exploit all benefits from GaN technology, new approaches in driver design are necessary. In this work a GaN specific gate driver supporting increased switching frequency, low driver output resistance, and GaN specific control voltages is presented. The driver has been implemented in a 0.35 micron thin film SOI-CMOS technology allowing high temperature operation up to 250 °C. The driver output characteristic is digitally adjustable with configuration data stored in an on-chip non-volatile memory based on EEPROM.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

10

Tournier, Dominique, Pierre Brosselard, Christophe Raynaud, Mihai Lazar, Herve Morel und Dominique Planson. „Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature Applications“. Advanced Materials Research 324 (August 2011): 46–51. http://dx.doi.org/10.4028/www.scientific.net/amr.324.46.

Der volle Inhalt der Quelle

Annotation:

Progress in semiconductor technologies have been so consequent these last years that theoretical limits of silicon, speci cally in the eld of high power, high voltage and high temperature have been achieved. At the same time, research on other semiconductors, and es- pecially wide bandgap semiconductors have allowed to fabricate various power devices reliable and performant enough to design high eciency level converters in order to match applications requirements. Among these wide bandgap materials, SiC is the most advanced from a techno- logical point of view: Schottky diodes are already commercially available since 2001, JFET and MOSFET will be versy soon. SiC-based switches Inverter eciency bene ts have been quite established. Considering GaN alternative technology, its driving force was mostly blue led for optical drive or lighting. Although the GaN developments mainly focused for the last decade on optoelectronics and radio frequency, their properties were recently explored to design devices suitable for high power and high eciency applications. As inferred from various studies, due to their superior material properties, diamond and GaN should be even better than SiC, silicon (or SOI) being already closed to its theoretical limits. Even if the diamond maturity is still far away from GaN and SiC, laboratory results are encouraging speci cally for very high voltage devices. Apart from packaging considerations, SiC, GaN and Diamond o ers a great margin of progress. The new power devices o er high voltage and low on-resistance that enable important reduction in energy consumption in nal applications. Applications for wide bandgap materials are the direction of high voltage but also high temperature. As for silicon technology, WBG-ICs are under development to take full bene ts of power and drive integration for high temperature applications.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

11

Gumyusenge, Aristide, und Jianguo Mei. „High Temperature Organic Electronics“. MRS Advances 5, Nr. 10 (2020): 505–13. http://dx.doi.org/10.1557/adv.2020.31.

Der volle Inhalt der Quelle

Annotation:

ABSTRACTThe emerging breakthroughs in space exploration, smart textiles, and novel automobile designs have increased technological demand for high temperature electronics. In this snapshot review we first discuss the fundamental challenges in achieving electronic operation at elevated temperatures, briefly review current efforts in finding materials that can sustain extreme heat, and then highlight the emergence of organic semiconductors as a new class of materials with potential for high temperature electronics applications. Through an overview of the state-of-the art materials designs and processing methods, we will layout molecular design principles and fabrication strategies towards achieving thermally stable operation in organic electronics.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

12

Prikhod’ko, A. V. „High-Temperature Superconductivity in Chalcogenide Vitreous Semiconductors“. Semiconductors 35, Nr. 6 (Juni 2001): 677. http://dx.doi.org/10.1134/1.1379402.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

13

Nagaev, E. L. „High-temperature resistivity of degenerate ferromagnetic semiconductors“. Physics Letters A 255, Nr. 4-6 (Mai 1999): 336–42. http://dx.doi.org/10.1016/s0375-9601(99)00188-7.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

14

Ruddy, Frank H., Laurent Ottaviani, Abdallah Lyoussi, Christophe Destouches, Olivier Palais und Christelle Reynard-Carette. „Performance and Applications of Silicon Carbide Neutron Detectors in Harsh Nuclear Environments“. EPJ Web of Conferences 253 (2021): 11003. http://dx.doi.org/10.1051/epjconf/202125311003.

Der volle Inhalt der Quelle

Annotation:

Silicon carbide (SiC) semiconductor is an ideal material for solid-state nuclear radiation detectors to be used in high-temperature, high-radiation environments. Such harsh environments are typically encountered in nuclear reactor measurement locations as well as high-level radioactive waste and/or “hot” dismantlingdecommissioning operations. In the present fleet of commercial nuclear reactors, temperatures in excess of 300 °C are often encountered, and temperatures up to 800 °C are anticipated in advanced reactor designs. The wide bandgap for SiC (3.27 eV) compared to more widely used semiconductors such as silicon (1.12 eV at room temperature) has allowed low-noise measurements to be carried out at temperatures up to 700 °C. The concentration of thermally induced charge carriers in SiC at 700 °C is about four orders of magnitude less than that of silicon at room temperature. Furthermore, SiC radiation detectors have been demonstrated to be much more resistant to the effects of radiation-induced damage than more conventional semiconductors such as silicon, germanium, or cadmium zinc telluride (CZT), and have been demonstrated to be operational after extremely high gamma-ray, neutron, and charged-particle doses. The purpose of the present review is to provide an updated state of the art for SiC neutron detectors and to explore their applications in harsh high-temperature, high-radiation nuclear reactor applications. Conclusions related to the current state-of-the-art of SiC neutron detectors will be presented, and specific ideal applications will be discussed.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

15

Wang, Haidi, Qingqing Feng, Xingxing Li und Jinlong Yang. „High-Throughput Computational Screening for Bipolar Magnetic Semiconductors“. Research 2022 (15.03.2022): 1–8. http://dx.doi.org/10.34133/2022/9857631.

Der volle Inhalt der Quelle

Annotation:

Searching ferromagnetic semiconductor materials with electrically controllable spin polarization is a long-term challenge for spintronics. Bipolar magnetic semiconductors (BMS), with valence and conduction band edges fully spin polarized in different spin directions, show great promise in this aspect because the carrier spin polarization direction can be easily tuned by voltage gate. Here, we propose a standard high-throughput computational screening scheme for searching BMS materials. The application of this scheme to the Materials Project database gives 11 intrinsic BMS materials (1 experimental and 10 theoretical) from nearly ~40000 structures. Among them, a room-temperature BMS Li2V3TeO8 (mp-771246) is discovered with a Curie temperature of 478 K. Moreover, the BMS feature can be maintained well when cutting the bulk Li2V3TeO8 into (001) nanofilms for realistic applications. This work provides a feasible solution for discovering novel intrinsic BMS materials from various crystal structure databases, paving the way for realizing electric-field controlled spintronics devices.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

16

Zaizen, Shohei, Kyohei Asami, Takashi Furukawa, Takeshi Hatta, Tsubasa Nakamura, Takashi Sakugawa und Takahisa Ueno. „The Development of a Compact Pulsed Power Supply with Semiconductor Series Connection“. Electronics 12, Nr. 21 (04.11.2023): 4541. http://dx.doi.org/10.3390/electronics12214541.

Der volle Inhalt der Quelle

Annotation:

In this study, high-voltage switching was performed by connecting semiconductors in series. By employing Snubber circuits and voltage divider resistors for each semiconductor, the destruction of the semiconductors was prevented. Additionally, a pulse transformer was installed between the function generator and the photocoupler to isolate the gate circuit, preventing electrical discharges in the circuit and enabling operation at an output voltage of 10 kV and an operating frequency of 200 Hz. The temperature of the semiconductors increased with the increase in operating frequency, which was counteracted by connecting charging resistors and capacitors to limit the current to the semiconductors. As a result, operation at 430 Hz became possible. Furthermore, a saturable inductor (SI) was connected to enable continuous operation. The SI delays the rise of the current and creates a phase difference, thereby reducing the power consumption of the conductor and mitigating the temperature rise, enabling continuous operation at 300 Hz. Moreover, by increasing the number of semiconductor series stages to six, an output voltage of 20 kV was confirmed in tests. By using two semiconductor series circuits, the pulsed power supply that can be changed to any pulse width was also created. As a result, output voltages with arbitrary pulse widths from 5 μs to 30 μs were confirmed.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

17

Han, Da-Gyeong, Dong-Hwan Lee und Jeong-Won Yoon. „Optimization of TLPS Bonding Process and Joint Property using Ni-Sn Paste for High Temperature Power Module Applications“. Journal of Welding and Joining 42, Nr. 2 (30.04.2024): 165–73. http://dx.doi.org/10.5781/jwj.2024.42.2.3.

Der volle Inhalt der Quelle

Annotation:

Recently, as interest in eco-friendly vehicles such as electric and hybrid vehicles increases, the demand for power semiconductors, a key component, is also increasing. Power semiconductors convert, distribute, and control power and operate in harsh environments such as high temperature and high pressure. In order to ensure stable reliability in such harsh environments, research on a technology that can stably form joints even at high temperatures is essential. Transitional liquid phase (TLP) bonding was proposed as a high-temperature power semiconductor chip bonding technology, which has the advantage of forming an intermetallic compound (IMC) phase with a high melting point at the joint. However, it takes a long time to convert the joint into full IMC phase. Therefore, in this study, in order to shorten the process time, a paste was manufactured by mixing high-melting point Ni metal powder and low-melting point Sn metal power, and a joint was formed through a TLPS (Transition liquid phase sintering) bonding using the paste. Pastes of different compositions were prepared by adjusting the ratio of Ni and Sn powders. The chip and substrate were bonded through a thermocompression (TC) bonding process, and the highest shear strength was obtained at a bonding temperature of 250 ℃ for 10 min. Heat treatment was performed at 200 ℃ for up to 500 h to evaluate the high temperature long-term reliability of the joints. The Ni-Sn TLPS bonded joints remained reliable joints after a long-term aging test at a high temperature of 200 ℃.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

18

Huang, Chengxi, Junsheng Feng, Jian Zhou, Hongjun Xiang, Kaiming Deng und Erjun Kan. „Ultra-High-Temperature Ferromagnetism in Intrinsic Tetrahedral Semiconductors“. Journal of the American Chemical Society 141, Nr. 31 (16.07.2019): 12413–18. http://dx.doi.org/10.1021/jacs.9b06452.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

19

Bonanni, Alberta, und Tomasz Dietl. „A story of high-temperature ferromagnetism in semiconductors“. Chem. Soc. Rev. 39, Nr. 2 (2010): 528–39. http://dx.doi.org/10.1039/b905352m.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

20

Chaves, Andrey, und David Neilson. „Two-dimensional semiconductors host high-temperature exotic state“. Nature 574, Nr. 7776 (02.10.2019): 39–40. http://dx.doi.org/10.1038/d41586-019-02906-9.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

21

Graham, Mike J. „Modern Analytical Techniques in High Temperature Oxidation and Corrosion“. Materials Science Forum 522-523 (August 2006): 61–68. http://dx.doi.org/10.4028/www.scientific.net/msf.522-523.61.

Der volle Inhalt der Quelle

Annotation:

Modern analytical techniques are useful to characterize oxide films and to study oxide growth processes. This paper will summarize some of our work on the high temperature oxidation of both metals and semiconductors. Systems considered include binary III-V semiconductors, e.g. GaAs, which unlike silicon does not normally form high-quality native oxide. For GaAs, the influence of deuterium in the substrate and surface platinum have been evaluated with respect to oxide growth. Both aluminum-containing alloys (FeCrAl and NiAl) and semiconductors (AlGaAs, InAlAs and InAlP) are included. The objective is to produce good quality protective and insulating aluminum-containing oxides. In these studies, the application of several modern surface- analytical techniques, particularly Auger electron spectroscopy, X-ray photoelectron spectroscopy and secondary ion mass spectrometry, complemented by other techniques, e.g. transmission electron microscopy and X-ray analysis provides useful information on the chemical composition of the oxides and leads to a better understanding of oxidation and corrosion phenomena. In the case of AlGaAs and InAlP, thermal oxidation produces aluminum-containing oxides that have good insulating characteristics which makes the oxide films potentially useful for some device applications.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

22

Lu, Zhizhong, Menglin Jiang, Jieshi Huang, Xinlei Zhou, Kejie Li, Yue Zheng, Wenkai Jiang, Tao Zhang, Hangbing Yan und Huan Xia. „Study on NO₂ gas sensitivity of metal phthalocyanine enhanced by graphene quantum dots“. Journal of Physics: Conference Series 2369, Nr. 1 (01.11.2022): 012083. http://dx.doi.org/10.1088/1742-6596/2369/1/012083.

Der volle Inhalt der Quelle

Annotation:

Traditional semiconductor gas sensors mainly based on metal oxides have some problems such as high working temperature, high energy consumption, low sensitivity, poor anti-interference ability and poor selectivity. Organic semiconductors, represented by metal phthalocyanine (MPc), are becoming the choice of new semiconductor gas sensors because of their advantages of abundant raw materials, low cost, simple process, strong compatibility and ability to work at room temperature. In this study, metal phthalocyanine (molecular diameter of about 1.3 nm) and graphene quantum dots (diameter distribution of 1-3 nm) are similar in size, which facilitates the construction of conjugated plane structure to achieve rapid charge transfer within the material, thus realizing the ultra-sensitive response of the sensor to specific gas molecules at room temperature. In this work, ethylenediamine was used as adhesive to bond tetracarboxylic metal phthalocyanine (MPc-COOH) and graphene quantum dots (GQDs) to form a new composite material MPc-GQD. The response value of the sensor to 100 ppm NO2 gas can reach 19.8 in 100 s at room temperature, and it has good recovery and repeatability under the premise of laser-assisted recovery. The results provide a new idea for the development of room temperature gas sensors using organic semiconductors and carbon nanomaterials.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

23

Gumyusenge, Aristide, Dung T. Tran, Xuyi Luo, Gregory M. Pitch, Yan Zhao, Kaelon A. Jenkins, Tim J. Dunn, Alexander L. Ayzner, Brett M. Savoie und Jianguo Mei. „Semiconducting polymer blends that exhibit stable charge transport at high temperatures“. Science 362, Nr. 6419 (06.12.2018): 1131–34. http://dx.doi.org/10.1126/science.aau0759.

Der volle Inhalt der Quelle

Annotation:

Although high-temperature operation (i.e., beyond 150°C) is of great interest for many electronics applications, achieving stable carrier mobilities for organic semiconductors at elevated temperatures is fundamentally challenging. We report a general strategy to make thermally stable high-temperature semiconducting polymer blends, composed of interpenetrating semicrystalline conjugated polymers and high glass-transition temperature insulating matrices. When properly engineered, such polymer blends display a temperature-insensitive charge transport behavior with hole mobility exceeding 2.0 cm2/V·s across a wide temperature range from room temperature up to 220°C in thin-film transistors.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

24

Kim, Jong-Woo, Seong-Geon Park, Min Kyu Yang und Byeong-Kwon Ju. „Microwave-Assisted Annealing Method for Low-Temperature Fabrication of Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistors“. Electronics 11, Nr. 19 (28.09.2022): 3094. http://dx.doi.org/10.3390/electronics11193094.

Der volle Inhalt der Quelle

Annotation:

Compared with conventional silicon-based semiconductors, amorphous oxide semiconductors present several advantages, including the possibility of room-temperature fabrication, excellent uniformity, high transmittance, and high electron mobility. Notably, the application of oxide semiconductors to flexible electronic devices requires a low-temperature fabrication process. However, for the realization of semiconductor characteristics and stable products, the fabrication process requires annealing at temperatures of 300 °C or higher. To address this, a low-temperature microwave annealing method, which improves the electrical characteristics of a transistor and reduces the production time compared with the conventional annealing method, is presented herein. Microwave annealing is a well-known method of annealing that minimizes the heat energy transferred to a substrate via instantaneous heat transfer through the vibrations of the lattice in the material during microwave irradiation and is suitable as a low-temperature annealing method. In this study, we evaluate the electrical characteristics of devices subjected to conventional annealing at 200 °C and 300 °C for 1 h and microwave annealing at 200 °C for 10 min. For the device subjected to microwave annealing at 200 °C for 10 min, the threshold voltage, current on/off ratio, subthreshold swing, and saturation mobility are 13.9 V, 1.14 × 105, 3.05 V/dec, and 4.23 cm2/V·s, respectively. These characteristic results are far superior to the characteristic results of the device subjected to conventional annealing at 200 °C for 1 h and are equivalent to those of the device treated at 300 °C for 1 h. Thus, this study develops a more effective annealing method, which facilitates low-temperature fabrication in a reduced period.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

25

Gulyamov, G., U. I. Erkaboev und N. Yu. Sharibaev. „The De Haas–Van Alphen effect at high temperatures and in low magnetic fields in semiconductors“. Modern Physics Letters B 30, Nr. 07 (20.03.2016): 1650077. http://dx.doi.org/10.1142/s0217984916500779.

Der volle Inhalt der Quelle

Annotation:

We developed the method of calculation of the temperature dependence of the magnetic susceptibility. We considered the de Haas–van Alphen (dHvA) effect in semiconductors at high temperatures and low magnetic fields. The effect of temperature on dHvA effect is explained with respect to the temperature dependence of the thermodynamic density of states in a magnetic field.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

26

Lostetter, Alexander B., J. Hornberger, B. McPherson, J. Bourne, R. Shaw, E. Cilio, W. Cilio et al. „High Temperature Silicon Carbide Power Modules for High Performance Systems“. Materials Science Forum 717-720 (Mai 2012): 1219–24. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.1219.

Der volle Inhalt der Quelle

Annotation:

The demands of modern high-performance power electronics systems are rapidly surpassing the power density, efficiency, and reliability limitations defined by the intrinsic properties of silicon-based semiconductors. The advantages of silicon carbide (SiC) are well known, including high temperature operation, high voltage blocking capability, high speed switching, and high energy efficiency. In this discussion, APEI, Inc. presents two newly developed high performance SiC power modules for extreme environment systems and applications. These power modules are rated to 1200V, are operational at currents greater than 100A, can perform at temperatures in excess of 250 °C, and are designed to house various SiC devices, including MOSFETs, JFETs, or BJTs.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

27

Harada, T., S. Ito und A. Tsukazaki. „Electric dipole effect in PdCoO2/β-Ga2O3 Schottky diodes for high-temperature operation“. Science Advances 5, Nr. 10 (Oktober 2019): eaax5733. http://dx.doi.org/10.1126/sciadv.aax5733.

Der volle Inhalt der Quelle

Annotation:

High-temperature operation of semiconductor devices is widely demanded for switching/sensing purposes in automobiles, plants, and aerospace applications. As alternatives to conventional Si-based Schottky diodes usable only at 200°C or less, Schottky interfaces based on wide-bandgap semiconductors have been extensively studied to realize a large Schottky barrier height that makes high-temperature operation possible. Here, we report a unique crystalline Schottky interface composed of a wide-gap semiconductor β-Ga2O3 and a layered metal PdCoO2. At the thermally stable all-oxide interface, the polar layered structure of PdCoO2 generates electric dipoles, realizing a large Schottky barrier height of ~1.8 eV, well beyond the 0.7 eV expected from the basal Schottky-Mott relation. Because of the naturally formed homogeneous electric dipoles, this junction achieved current rectification with a large on/off ratio approaching 108 even at a high temperature of 350°C. The exceptional performance of the PdCoO2/β-Ga2O3 Schottky diodes makes power/sensing devices possible for extreme environments.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

28

Pavlidis, Georges, Muhammad Jamil und Bivek Bista. „(Invited) Sub-Bandgap Thermoreflectance Imaging of Ultra-Wide Bandgap Semiconductors“. ECS Meeting Abstracts MA2023-01, Nr. 32 (28.08.2023): 1822. http://dx.doi.org/10.1149/ma2023-01321822mtgabs.

Der volle Inhalt der Quelle

Annotation:

Over the past few decades, wide bandgap semiconductors (WBG) have been used to fabricate high power and high frequency devices. Device structures, such as Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs), have begun to be implemented in commercial products such as electrical vehicles and laptop power chargers. With the continuous increase in energy demand, however, extremely high voltage (>10 kV) applications are needed to increase the grid resiliency, storage, and transmission efficiency. Ultra-wide bandgap (UWBG) Semiconductors, with bandgaps >4 eV, could potentially be used to overcome this barrier. Pushing the maximum voltage limit of these devices, however, can lead to significant power dissipation and excessive joule heating. Unfortunately, the thermal conductivity of some UWBG semiconductors, such as Gallium Oxide, is inherently low and thus requires both device and package level thermal management. Innovative solutions, such as high thermal conductivity substrates, are required to reduce the active channel temperature and extend the device lifetime and reliability. In order to successfully implement these technologies, accurate measurement of the peak temperature and thermal distribution (both vertical and lateral) is necessary. Depth-averaged vertical temperature gradients have been demonstrated via Raman thermometry but this approach can become significantly time consuming if attempting to perform transient or lateral maps. On the other hand, Transient Thermoreflectance Imaging (TTI) has shown the potential to provide high throughput thermal images with high spatial resolution (100 nm) and temporal resolution (50 ns). Traditionally, TTI has been used to probe the temperature of metals due to their inherent high reflectivity. Nevertheless, recent studies have demonstrated the ability to probe the surface temperature of the semiconductor when using near-bandgap illumination sources. Due to the high bandgap of UWBG semiconductors, the maturity of high transmission UV sources, optics and detectors has not yet been fully developed. This study investigates the applicability of sub-bandgap wavelengths to probe the active channel temperature. The thermal properties of both Gallium Oxide transistors and Transfer Length Method (TLM) structures are investigated using TTI. The accuracy of the channel temperature is assessed by direct comparison to the adjacent metal contact temperature. A finite element model (FEM) is developed to understand the thermal transport in low thermally conductive semiconductors. Finally, a 3D analytical model is used to extract thermal properties such as the thermal conductivity of the thin film layers. Figure a) Optical CCD Image of Gallium Oxide Transfer Length Method (TLM) Structure b) Transient Thermoreflectance Image (TTI) of Gallium Oxide TLM using sub-bandgap illumination wavelength. Figure 1

APA, Harvard, Vancouver, ISO und andere Zitierweisen

29

Wang, Baron, Andrea S. Chen und Randy H. Y. Lo. „Characteristics of Organic-Based Thermal Interface Materials Suitable for High Temperature Operation“. Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2019, HiTen (01.07.2019): 000041–44. http://dx.doi.org/10.4071/2380-4491.2019.hiten.000041.

Der volle Inhalt der Quelle

Annotation:

Abstract Historically, for semiconductors subject to standard operating temperatures--which tend not to exceed 125°C--the Tg (glass transition temperatures) of the organic packaging materials protecting the chips is usually around 175°C. Given that, when it comes to electronics operating at high temperatures—typically an environment where the ambient temperature exceeds 200°C—the use of organic materials is generally prohibited due to rapid degradation. At those elevated temperatures, the packaging materials selected are generally composed of metals and ceramics but these materials come with their own shortfalls as well as higher material and manufacturing costs. Therefore, it would be desirable if there were ‘ruggedized’ versions of the organic compounds so commonly used in semiconductor packaging but available for more extreme temperatures, both to reduce cost and package footprint. Meanwhile, the demands from recent developments in high performance computing (HPC) and high-speed data networks means a greater need for increased power and thermal dissipation coupled with very large package body sizes to accommodate the high I/O count. The latest in server microprocessor (MPU) products can easily generate up to 300W during operation, and the heat generated must be quickly transported away from chip to prevent the threat of thermal shutdown. The thermal dissipation issue is controlled by the use of heat spreaders and heat sinks, both of which are intended to make contact with the back-side of a flipped MPU via a thermal interface material (TIM), as part of a large die, large body-size flip-chip ball grid array (FCBGA) package. The thermal interface materials discussed here are examples of organic engineered materials that are capable of withstanding higher operating temperatures than typically seen by semiconductors encased in organic-based packaging. This paper will look at the key material and mechanical attributes for a good thermal interface material, examines the pros-and-cons of various thermal interface material formulations, and discusses the factors for reliable thermal dissipation performance.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

30

Arkin, Michael, Jeff Watson, Michael Siu und Michael Cusack. „Precision Analog Signal Conditioning Semiconductors for Operation in Very High Temperature Environments“. Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2013, HITEN (01.01.2013): 000139–51. http://dx.doi.org/10.4071/hiten-ta17.

Der volle Inhalt der Quelle

Annotation:

When designing signal chains for systems exposed to high temperature environments, analog signal processing ICs are needed to enable precision sensor measurements. However, as ambient operating temperatures increase beyond the typical extended-industrial +125°C limit, the performance characteristics of analog semiconductors are strongly impacted by the effects of temperature on circuit design, packaging, and the underlying fabrication process. In this paper we introduce two new precision analog components, an operational amplifier and voltage reference, rated for very high temperature operation. We then discuss the steps taken to ensure their performance at high temperature is robust and can be maintained over a limited lifetime. Finally, we demonstrate these devices utilized in an example application: a constant current source for temperature sensor signal conditioning.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

31

Furnival, Benjamin J. D., Sandip K. Roy, Nicolas G. Wright und Alton B. Horsfall. „Influence of Contact Metallisation on the High Temperature Characteristics of High-κ Dielectrics“. Materials Science Forum 740-742 (Januar 2013): 837–40. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.837.

Der volle Inhalt der Quelle

Annotation:

In this work SiC-based MIS capacitors have been fabricated with different contact/high-k dielectric combinations and the temperature dependence of the characteristics have been examined in an N2ambient at temperatures between 323K and 673K. The structures utilise either a Pt or Pd catalytic gate contact and a TiO2or HfO2high-k dielectric, all of which are grown on a thin SiO2layer, thermally grown on the Si face of a 4H SiC epitaxial layer. The MIS capacitors have been studied in an N2 ambient between 323K and 673K and observations show that VFBreduces with increasing temperature. The majority of this variation is caused a reduction in the Ditinfluencing the structures electrical characteristics, due to a shift in the semiconductors bulk potential, which is due to the lower VTHof SiC-based MOSFETs at high temperatures.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

32

Qi, Siyuan, Chris Powley, Maria Mirgkizoudi, Adele Pliscott und Peter Collier. „Evaluation of High Temperature Joining Technologies for Semiconductor Die Attach“. Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2017, HiTEN (01.07.2017): 000177–92. http://dx.doi.org/10.4071/2380-4491.2017.hiten.177.

Der volle Inhalt der Quelle

Annotation:

Abstract The development of novel high temperature die attach methods for semiconductor packaging enables use in harsh environments and unique opportunities for demanding industrial applications such as controls and monitoring for next generation engine and airframe platforms. Traditional die attach materials including lead solders and conductive adhesives cannot meet requirements of operation temperatures up to and exceeding 300°C due to their limited melting and glass transition temperatures [1]. The Manufacturing Technology Centre Ltd (MTC) has evaluated a range of high temperature die attach materials and processes for silicon and silicon carbide (SiC) semiconductors. Assembly processes were explored for bonding components with and without a back metallisation and with capability to support electrical back contact if required. Die attach methods evaluated include:Sinterable silver materials for back metallised semiconductor componentsSilver glass for non-back metallised semiconductor componentsGold-silicon near eutectic preforms for non-back metallised semiconductor components Two types of substrates were selected including high temperature co-fired ceramic (HTCC) packages and gold or silver plated Kovar substrates. Test assemblies were subjected to accelerated life tests consisting of thermal ageing at 400°C and thermal cycling of −40°C to 200°C. These tests enabled the evaluation of the die attach materials after accelerated conditions of use. Reliability performance of the die attach materials was assessed using visual and X-ray inspection, mechanical shear testing and microstructure analysis. For sinterable silver materials, the test assemblies constructed using HTCC packages showed no significant reduction in shear strength after 1,008 hours ageing at 400°C. However shear strengths of the test assemblies constructed using Kovar substrates reduced by 95% of the initial values after ageing at 400°C for 336 hours. All test assemblies showed no significant reduction in adhesion after thermal cycling of −40°C to 200°C for 1,000 cycles. In addition, no apparent differences in shear strengths could be detected for sintered silver interconnections for gold and silver metallised semiconductor components. Gold-silicon bonding as performed using a near eutectic preform had limited performance as aged at 400°C. Silver glass test assemblies constructed using HTCC packages showed a 50% reduction in shear strength compared to the initial values after thermal ageing at 400°C for 1,000 hours. A similar reduction in adhesion was presented after thermal cycling of −40°C to 200°C for 1,000 cycles.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

33

Huang, Luying, Fenghua Liu, Jiachen Bao, Xiaoman Li und Weiping Wu. „High-Performance Organic Field-Effect Transistors of Liquid Crystalline Organic Semiconductor by Laser Mapping Annealing“. Materials 17, Nr. 6 (19.03.2024): 1395. http://dx.doi.org/10.3390/ma17061395.

Der volle Inhalt der Quelle

Annotation:

Organic semiconductors (OSCs), especially small molecule semiconductors, have received increasing attention due to their good designability and variability. Phase transitions and interfacial properties have a decisive influence on device performance. Here, 2-Dodecyl-7-phenyl[1]benzothieno[3,2-b][1]benzothiophene (Ph-BTBT-12) devices are treated with low-power laser annealing, which is able to avoid the influence of the dewetting effect on the hole mobility of organic semiconductor materials. Ultraviolet ozone treatment and self-assembled monolayer treatment can improve the performance and stability of the device. Moreover, after low-temperature thermal annealing, the hole mobility of the device can even reach as high as 4.80 cm2 V−1 s−1, and we tested the optical response of the device to the ultraviolet wavelength and found that its maximum optical responsivity was 8.2 AW−1.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

34

Chen, Yu, S. W. Fan und P. Xu. „Defect induced ambipolar conductivity in wide-bandgap semiconductor SrS: Theoretical perspectives“. Applied Physics Letters 121, Nr. 25 (19.12.2022): 252102. http://dx.doi.org/10.1063/5.0125543.

Der volle Inhalt der Quelle

Annotation:

Due to the absence of high-performance ambipolar wide-bandgap (WBG) semiconductors, the realization of active transparent photoelectronic devices is precluded. Herein, based on the hybrid functional calculations, we predict that, in a wide-bandgap semiconductor strontium sulfide (SrS), the Br (Rb) substituting S (Sr) is an ideal n (p)-type defect. SrBr2 and Rb2S are promising dopant sources for introducing Br and Rb, respectively. Moreover, the Sr-rich (Sr-poor) condition is the optimum growth environment to fabricate the BrS (RbSr) defects. Thermodynamic equilibrium simulations indicate that the concentration of BrS and RbSr can exceed 4 × 1019 cm−3 at high growth temperatures. After rapid quenching from the growth temperature to room temperature, the free carrier densities can reach 1.56 × 1019 cm−3 for electrons and 1.02 × 1018 cm−3 for holes. These results show SrS is a promising ambipolar WBG semiconductor that has huge potential applications in future optoelectronic devices.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

35

Neudeck, P. G., R. S. Okojie und Liang-Yu Chen. „High-temperature electronics - a role for wide bandgap semiconductors?“ Proceedings of the IEEE 90, Nr. 6 (Juni 2002): 1065–76. http://dx.doi.org/10.1109/jproc.2002.1021571.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

36

Kuroda, Shinji, Nozomi Nishizawa, Kôki Takita, Masanori Mitome, Yoshio Bando, Krzysztof Osuch und Tomasz Dietl. „Origin and control of high-temperature ferromagnetism in semiconductors“. Nature Materials 6, Nr. 6 (21.05.2007): 440–46. http://dx.doi.org/10.1038/nmat1910.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

37

Arciszewska, M., A. Mycielski, C. Testelin, C. Rigaux und A. Mauger. „High-temperature magnetic susceptibility ofCd1−xFexTe diluted magnetic semiconductors“. Physical Review B 45, Nr. 15 (15.04.1992): 8746–48. http://dx.doi.org/10.1103/physrevb.45.8746.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

38

Zhang, Wenxu, Zhishuo Huang, Wanli Zhang und Yanrong Li. „Two-dimensional semiconductors with possible high room temperature mobility“. Nano Research 7, Nr. 12 (03.09.2014): 1731–37. http://dx.doi.org/10.1007/s12274-014-0532-x.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

39

Wang, Yaqi, Huasheng Sun, Shihai Wu, Ang Li, Yi Wan, Erjun Kan und Chengxi Huang. „Prediction of high-temperature ferromagnetic semiconductors in tetrahedral superlattices“. Science China Materials 67, Nr. 4 (20.03.2024): 1225–30. http://dx.doi.org/10.1007/s40843-023-2863-2.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

40

Zhan, Tianzhuo, Mao Xu, Zhi Cao, Chong Zheng, Hiroki Kurita, Fumio Narita, Yen-Ju Wu et al. „Effects of Thermal Boundary Resistance on Thermal Management of Gallium-Nitride-Based Semiconductor Devices: A Review“. Micromachines 14, Nr. 11 (08.11.2023): 2076. http://dx.doi.org/10.3390/mi14112076.

Der volle Inhalt der Quelle

Annotation:

Wide-bandgap gallium nitride (GaN)-based semiconductors offer significant advantages over traditional Si-based semiconductors in terms of high-power and high-frequency operations. As it has superior properties, such as high operating temperatures, high-frequency operation, high breakdown electric field, and enhanced radiation resistance, GaN is applied in various fields, such as power electronic devices, renewable energy systems, light-emitting diodes, and radio frequency (RF) electronic devices. For example, GaN-based high-electron-mobility transistors (HEMTs) are used widely in various applications, such as 5G cellular networks, satellite communication, and radar systems. When a current flows through the transistor channels during operation, the self-heating effect (SHE) deriving from joule heat generation causes a significant increase in the temperature. Increases in the channel temperature reduce the carrier mobility and cause a shift in the threshold voltage, resulting in significant performance degradation. Moreover, temperature increases cause substantial lifetime reductions. Accordingly, GaN-based HEMTs are operated at a low power, although they have demonstrated high RF output power potential. The SHE is expected to be even more important in future advanced technology designs, such as gate-all-around field-effect transistor (GAAFET) and three-dimensional (3D) IC architectures. Materials with high thermal conductivities, such as silicon carbide (SiC) and diamond, are good candidates as substrates for heat dissipation in GaN-based semiconductors. However, the thermal boundary resistance (TBR) of the GaN/substrate interface is a bottleneck for heat dissipation. This bottleneck should be reduced optimally to enable full employment of the high thermal conductivity of the substrates. Here, we comprehensively review the experimental and simulation studies that report TBRs in GaN-on-SiC and GaN-on-diamond devices. The effects of the growth methods, growth conditions, integration methods, and interlayer structures on the TBR are summarized. This study provides guidelines for decreasing the TBR for thermal management in the design and implementation of GaN-based semiconductor devices.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

41

Shur, Michael. „(Invited) Ultrawide Bandgap Transistors for High Temperature and Radiation Hard Applications“. ECS Meeting Abstracts MA2022-02, Nr. 37 (09.10.2022): 1348. http://dx.doi.org/10.1149/ma2022-02371348mtgabs.

Der volle Inhalt der Quelle

Annotation:

Some of the best high-temperature commercial devices are now GaN field-effect transistors (FETs) on silicon substrates. However, these devices cannot meet requirements for space applications requiring high radiation hardness and for operations at temperatures as high as 600 oC. High temperature and radiation hard applications stimulated interest in developing transistors using ultrawideband gap materials including AlN, AlGaN with a high molecular fraction of aluminum, gallium oxide, diamond, boron nitride, and their heterojunctions. A wider bandgap and, therefore, larger energy required to produce an electron-hole pair and larger energy gap discontinuities in heterostructures formed by these materials make them both more tolerant to radiation and more capable of operating at higher temperatures. Insulated gate (Metal Insulator Heterostructure FET (MISHFET) structures with high K-materials implemented in the AlGaN materials system, the power FINFET configurations implemented in GaN and diamond, and gate edge and channel engineering approaches are key technologies for ultra-wide bandgap semiconductor applications. Using all AlGaN materials is now a proven approach to compete with GaN. Measured and predicted materials properties of BN and diamond promise an even better performance but the power device applications of these materials and their heterojunctions have not yet been sufficiently explored. I will review the material parameters of ultra-wideband gap semiconductors and specific device designs linking them to the expected radiation hardness and high-temperature performance and to improving the reliability and lifetime of ultra-wideband gap transistors.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

42

Kizilyalli, Isik C., Olga Blum Spahn und Eric P. Carlson. „(Invited) Recent Progress in Wide-Bandgap Semiconductor Devices for a More Electric Future“. ECS Meeting Abstracts MA2022-02, Nr. 37 (09.10.2022): 1344. http://dx.doi.org/10.1149/ma2022-02371344mtgabs.

Der volle Inhalt der Quelle

Annotation:

Wide-bandgap (WBG) semiconductors, with their excellent electrical properties, offer breakthrough performance in power electronics enabling low losses, high switching frequencies, and high temperature operation. WBG semiconductors are likely candidates to replace silicon-based semiconductors in the near future seeing as Silicon is fast approaching its performance limits for high power requirements. Wide-bandgap power semiconductor devices offer breakthrough circuit performance enabling low losses, high switching frequencies, and high temperature operation which will allow for enormous energy efficiency gains in a wide range of potential applications. In the past ten years, the U.S. Department of Energy’s Advanced Research Project Agency - Energy (ARPA-E), which was established to fund creative, out-of-the-box, transformational energy technologies that are too early for private-sector investment, has invested in WBG semiconductors including material and device-centric programs along with application specific programs targeting the barriers to widespread adoption in power electronics. Under these ARPA-E programs, medium voltage (10-20kV) WBG device development has commenced to push the voltage boundaries of the devices including the development of WBG super-junction devices. Light triggered photoconductive WBG devices are also being investigated for MV applications. The WBG MV devices will enable MVDC grid distribution applicable to markets including electrified transportation, renewable interconnections, and offshore oil, gas, and wind production. Other WBG device ideas are also being explored under ARPA-E programs including WBG integrated circuits and neutron detectors. The progress and challenges of the WBG devices being developed under ARPA-E programs will be reviewed along with thoughts on the future trends of WBG device development.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

43

Wang, M., R. A. Marshall, K. W. Edmonds, A. W. Rushforth, R. P. Campion und B. L. Gallagher. „Determining Curie temperatures in dilute ferromagnetic semiconductors: High Curie temperature (Ga,Mn)As“. Applied Physics Letters 104, Nr. 13 (31.03.2014): 132406. http://dx.doi.org/10.1063/1.4870521.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

44

Monobe, Hirosato, Masaomi Kimoto und Yo Shimizu. „Influence of Temperature Variation on Field Effect Transistor Properties Using a Solution-Processed Liquid Crystalline Semiconductor, 8TNAT8“. Journal of Nanoscience and Nanotechnology 16, Nr. 4 (01.04.2016): 3277–81. http://dx.doi.org/10.1166/jnn.2016.12299.

Der volle Inhalt der Quelle

Annotation:

In this study, we used a liquid crystalline (LC) semiconductor, 8TNAT8, solution (e.g., 0.1 wt% in toluene) for forming an organic semiconductor layer by solution casting method, and fabricated bottom-gate/bottom-contact type field effect transistors (FETs). These LC semiconductors show FET characteristic properties and have high carrier mobility of 0.01 cm2 V−1 s−1. We have investigated the surface morphology and the influence of temperature variation on LC FET properties across the phase transition from crystal to mesophase of a LC semiconductor, 8TNAT8. In the most cases, FET mobility was irreversibly decreased after temperature heat stress above the melting point of 8TNAT8, owing to the morphological change of LC layer.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

45

Höhne, Jens, Matthias Bühler, Theo Hertrich und Uwe Hess. „Cryodetectors for High Resolution X-Ray Spectroscopy“. Microscopy and Microanalysis 6, S2 (August 2000): 740–41. http://dx.doi.org/10.1017/s1431927600036199.

Der volle Inhalt der Quelle

Annotation:

Based on excellent energy resolution and single quantum detection sensitivity, cryodetectors are offering a variety of new, analytical solutions for the analysis of elementary surface compositions, especially for the analysis of light elements and very small sized structures. Cryodetectors operate typically at temperatures between 30 and 200mK and require vibration free and fully automated cooling systems in order to qualify for industrial applications. Cryodetectors are low temperature superconductors where the two most prominent types are based on microcalorimeter and tunnel diode principles. Cryodetectors are mainly employed for surface analysis applications as energy dispersive X-ray spectrometers with energy resolutions of less than 15eV, but may also be used as highly sensitive UV, VIS or even mass spectrometers in the future.Conventional EDX detectors are semiconductors. An impinging X-ray quantum creates a number of electronhole pairs dependent on the energy of the triggering event thus allowing energy dispersive measurements. The performance limit of semiconductor detectors has almost been reached and is determined by the excitation energy necessary to create electron-hole pairs.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

46

Kucukgok, B., Q. He, A. Carlson, A. G. Melton, I. T. Ferguson und N. Lu. „Investigation of Wide Bandgap Semiconductors for Thermoelectric Applications“. MRS Proceedings 1490 (2013): 161–66. http://dx.doi.org/10.1557/opl.2013.26.

Der volle Inhalt der Quelle

Annotation:

ABSTRACTThermoelectric materials with stable mechanical and chemical properties at high temperature are required for power generation applications. For example, gas temperatures up to 1000°C are normally present in the waste stream of industrial processes and this can be used for electricity generation. There are few semiconductor materials that can operate effectively at these high temperatures. One solution may be the use of wide bandgap materials, and in particular GaN-based materials, which may offer a traditional semiconductor solution for high temperatures thermoelectric power generation. In particular, the ability to both grow GaN-based materials and fabricate them into devices is well understood if their thermoelectric properties are favorable. To investigate the possibility of using III-Nitride and its alloys for thermoelectric applications, we synthesized and characterized room temperature thermoelectric properties of metal organic chemical vapor deposition grown GaN and InGaN with different carrier concentrations and indium compositions. The promising value of Seebeck coefficients and power factors of Si-doped GaN and InGaN indicated that these materials are suitable for thermoelectric applications.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

47

Ostapchuk, Mikhail, Dmitry Shishov, Daniil Shevtsov und Sergey Zanegin. „Research of Static and Dynamic Properties of Power Semiconductor Diodes at Low and Cryogenic Temperatures“. Inventions 7, Nr. 4 (18.10.2022): 96. http://dx.doi.org/10.3390/inventions7040096.

Der volle Inhalt der Quelle

Annotation:

Systems with high-temperature superconductors (HTSC) impose new requirements on power conversions, since the main part of the losses in such systems is induced in the semiconductors of the converters. Within the framework of this study, the possibility of improving the static and dynamic characteristics of power semiconductor diodes using cryogenic cooling was confirmed; in some cases, a loss reduction of up to 30% was achieved.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

48

Raju, Krishna Murti. „High temperature elastic anharmonicity in lanthanum mono-chalcogenides“. Canadian Journal of Physics 89, Nr. 7 (Juli 2011): 817–24. http://dx.doi.org/10.1139/p11-062.

Der volle Inhalt der Quelle

Annotation:

The elastic behaviour of lanthanum mono-chalcogenides is investigated at elevated temperatures. This study includes second- and third-order elastic constants of compound semiconductors LaS, LaSe, and LaTe, starting from primary physical parameters, that is, nearest neighbour distance and hardness parameters, assuming long- and short-range potentials. The variations of elastic constants with temperature follow a systematic trend identical to that observed in other chalcogenides in the NaCl-type structure family. The present approach can also succeed in predicting the pressure derivatives of the elastic constants. The obtained results are compared with available theoretical data and are found to be in satisfactory agreement with present values.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

49

Endo, Hirohisa, Kozaburo Tamura und Makoto Yao. „Liquid metals and semiconductors under pressure“. Canadian Journal of Physics 65, Nr. 3 (01.03.1987): 266–85. http://dx.doi.org/10.1139/p87-036.

Der volle Inhalt der Quelle

Annotation:

Studies on the electronic and thermodynamic properties of liquid metals and semiconductors at high temperatures and high pressures are reviewed. A substantial decrease of volume for liquid alkali metals is brought about by the application of pressure. The interference function of liquid alkali metals with high pressure can be described by the hard-sphere model with a fixed packing fraction when one proceeds along the melting curve. For liquid Cs, the s–d resonance scattering plays an important role in the electron-transport properties at high pressures. In expanded liquid Hg, a metal–nonmetal transition occurs at a density near 9 g∙cm−3, and anomalous behaviour is found in the thermodynamic properties such as equation-of-state and density fluctuations. At low densities, substantial volume contraction and a large increase in conductivity are brought about by the addition of a small amount of Bi. At high temperatures and high pressures, liquid Se is transformed from a semiconducting state to a metallic state, accompanied by modification of chain structure. The measurements of sound velocity and optical properties reveal that the temperature and pressure at which the semiconductor–metal transition occurs are lowered by the addition of Te. It is suggested that the semiconductor–metal transition observed in liquid Se is induced by increasing fluctuations in the interchain distance and increasing interchain coupling. The electronic properties of liquid Se are substantially changed by the addition of impurity elements such as alkalis and halogens. Modification of chain structure is associated with the charge transfer between Se chains and impurity elements. To understand how the interchain coupling affects the electronic properties of liquid Se, the properties of the isolated Se chains confined in the pores of mordenite are studied. The pressure effects on the two-phase separation of liquid binary mixtures, such as metal–metal, metal–semiconductor, and metal – ionic salt mixtures, are also discussed.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

50

Fan, Yan. „Recent progress in diluted ferromagnetism for spintronic application“. Journal of Physics: Conference Series 2608, Nr. 1 (01.10.2023): 012046. http://dx.doi.org/10.1088/1742-6596/2608/1/012046.

Der volle Inhalt der Quelle

Annotation:

Abstract With the continuous in-depth research of spintronics, the manufacture of high-performance magnetic random access memory devices and electronic devices that are more energy-efficient and generate less heat has received extensive attention. The traditional ferromagnet TbMnO3 is basically Tc at room temperature, which seriously limits its application. Since the discovery of diluted magnetic semiconductor materials at room temperature, such as AlNTiO2, ZnO, SnO2, etc., they have received increasing attention. Although these dopants can form ferromagnetism above-room temperature, the ferromagnetic mechanism and ferromagnetic properties are different. In this regard, we reviewed the current progress in the research on above room temperature dilute magnetic semiconductor materials; discussed the ferromagnetic mechanism of dilute magnetic semiconductors; summarized the problems and challenges, and advantages and disadvantages of different kinds of dilute magnetic semiconductor materials used in new memory devices; and prospected the application potential of spintronic devices.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

Zeitschriftenartikel zum Thema „High temperature semiconductors“

Geben Sie eine Quelle nach APA, MLA, Chicago, Harvard und anderen Zitierweisen an