Bücher zum Thema „High temperature semiconductors“
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M, Willander, und Hartnagel Hans 1934-, Hrsg. High temperature electronics. London: Chapman & Hall, 1997.
Den vollen Inhalt der Quelle findenNational Research Council (U.S.). Committee on Materials for High-Temperature Semiconductor Devices., Hrsg. Materials for high-temperature semiconductor devices. Washington, D.C: National Academy Press, 1995.
Den vollen Inhalt der Quelle findenBakker, Anton. High-accuracy CMOS smart temperature sensors. Boston, MA: Kluwer Academic Publishers, 2000.
Den vollen Inhalt der Quelle findenChristou, A. Reliability of high temperature electronics. College Park, Md: Center for Reliability Engineering, University of Maryland, 1996.
Den vollen Inhalt der Quelle findenBakker, Anton. High-Accuracy CMOS Smart Temperature Sensors. Boston, MA: Springer US, 2000.
Den vollen Inhalt der Quelle findenuniversitet, Uppsala, Hrsg. Dynamic magnetic properties of high temperature superconductors at low fields. Uppsala: Acta Universitatis Upsaliensis, 1997.
Den vollen Inhalt der Quelle findenCorvasce, Chiara. Mobility and impact ionization in silicon at high temperature. Konstanz: Hartung-Gorre, 2007.
Den vollen Inhalt der Quelle findenCorvasce, Chiara. Mobility and impact ionization in silicon at high temperature. Konstanz: Hartung-Gorre, 2007.
Den vollen Inhalt der Quelle findenL, Shindé Subhash, und Rudman David Albert, Hrsg. Interfaces in high-Tc superconducting systems. New York: Springer-Verlag, 1994.
Den vollen Inhalt der Quelle findenLongya, Xu, Zhu Lu und United States. National Aeronautics and Space Administration., Hrsg. A thermal and electrical analysis of power semiconductor devices: Research report. [Washington, DC: National Aeronautics and Space Administration, 1997.
Den vollen Inhalt der Quelle findenLongya, Xu, Zhu Lu und United States. National Aeronautics and Space Administration., Hrsg. A thermal and electrical analysis of power semiconductor devices: Research report. [Washington, DC: National Aeronautics and Space Administration, 1997.
Den vollen Inhalt der Quelle findenM, Singer J., Hrsg. Phase transition approach to high temperature superconductivity: Universal properties of cuprate superconductors. London: Imperial College Press, 2000.
Den vollen Inhalt der Quelle findenSymposium E on High-Temperature Electronics: Materials, Devices, and Applications (1994 Strasbourg, France). High temperature electronics: Proceedings of Symposium E on High-Temperature Electronics: Materials, Devices, and Applications of the 1994 E-MRS Spring Conference, Strasbourg, France, May 24-27, 1994. Amsterdam: Elsevier, 1995.
Den vollen Inhalt der Quelle findenCarpinero, Gullerno. Semiconductor terahertz technology: Devices and systems at room temperature operation. Hoboken: John Wiley & Sons, Inc., 2015.
Den vollen Inhalt der Quelle findenA, Smirnov I., Institut fiziki (Akademii͡a︡ nauk SSSR) und Vsesoi͡u︡znai͡a︡ shkola "Aktualʹnye voprosy fiziki i khimii redkozemelʹnykh poluprovodnikov" (7th : 1987 : Makhachkala, Russia), Hrsg. Aktualʹnye voprosy fiziki i khimii redkozemelʹnykh poluprovodnikov: Tematicheskiĭ sbornik. Makhachkala: Institut fiziki, Dagestanskiĭ filial AN SSSR, 1988.
Den vollen Inhalt der Quelle findenL, Shindé Subhash, und Rudman David A, Hrsg. Interfaces in high-T(subscript c) superconducting systems. New York: Springer-Verlag, 1994.
Den vollen Inhalt der Quelle findenA, Madhukar, Society of Photo-optical Instrumentation Engineers., Society of Vacuum Coaters und SPIE Symposium on Advances in Semiconductors and Superconductors: Physics Toward Device Applications (1990 : San Diego, Calif.), Hrsg. Growth of semiconductor structures and high-Tc thin films on semiconductors: 20-21 March 1990, San Diego, Calfiornia. Bellingham, Wash., USA: The Society, 1990.
Den vollen Inhalt der Quelle findenEuropean Conference on High Temperature Electronics (3rd 1999 Berlin, Germany). HITEN 99: The Third European Conference on High Temperature Electronics. Abingdon, Oxfordshire, England: AEA Technology, 1999.
Den vollen Inhalt der Quelle findenD, Hochheimer Hans, Etters Richard D, North Atlantic Treaty Organization. Scientific Affairs Division. und NATO Advanced Research Workshop on Frontiers of High-Pressure Research (1991 : Fort Collins, Colo.), Hrsg. Frontiers of high-pressure research. New York: Plenum Press, 1991.
Den vollen Inhalt der Quelle findenDammann, Michael. Defects in silicon induced by high temperature treatment and their influence on MOS-devices: A thesis submitted to the Swiss Federal Institute of Technology Zurich for the degree of Doctor of Technical Sciences. Zurich: Physical Electronics Laboratory, Swiss Federal Institute of Technology, 1994.
Den vollen Inhalt der Quelle findenChristian, Fazi, Parsons James D und United States. National Aeronautics and Space Administration., Hrsg. Fast risetime reverse bias pulse failures in SiC PN junction diodes. [Washington, DC]: National Aeronautics and Space Administration, 1996.
Den vollen Inhalt der Quelle finden1949-, Simons Rainee, und United States. National Aeronautics and Space Administration., Hrsg. Characteristics of III-V semiconductor devices at high temperature. [Washington, D.C.]: National Aeronautics and Space Administration, 1994.
Den vollen Inhalt der Quelle finden1949-, Simons Rainee, und United States. National Aeronautics and Space Administration., Hrsg. Characteristics of III-V semiconductor devices at high temperature. [Washington, D.C.]: National Aeronautics and Space Administration, 1994.
Den vollen Inhalt der Quelle findenAnthony, Powell J., Petit Jeremy B und United States. National Aeronautics and Space Administration., Hrsg. Development of silicon carbide semiconductor devices for high temperature applications. [Washington, DC]: National Aeronautics and Space Administration, 1991.
Den vollen Inhalt der Quelle findenK, Yeoh W., Hrsg. Improvement of vortex pinning in MgB₂ by doping. New York: Nova Science Publishers, 2008.
Den vollen Inhalt der Quelle findenNagaev, Edouard. Magnetic Semiconductors and High Temperature Superconductivity. University of Cambridge ESOL Examinations, 1999.
Den vollen Inhalt der Quelle findenSpencer, Michael, Michael Shur, Steven Denbaars und John Palmour. Wide-Bandgap Semiconductors for High Power, High Frequency and High Temperature: Volume 512. University of Cambridge ESOL Examinations, 2014.
Den vollen Inhalt der Quelle finden(Editor), Magnus Willander, und H. L. Hartnagel (Editor), Hrsg. High Temperature Electronics (Electronic Materials Series). Springer, 1996.
Den vollen Inhalt der Quelle findenJeon, Deok-Su. Modeling the temperature dependence of the silicon-on-insulator mosfet for high-temperature applications. 1990.
Den vollen Inhalt der Quelle findenCharacteristics of III-V semiconductor devices at high temperature. [Washington, D.C.]: National Aeronautics and Space Administration, 1994.
Den vollen Inhalt der Quelle findenWide-bandgap semiconductors for high power, high frequency, and high temperature: Symposium held April 13-15, 1998, San Francisco, California, U.S.A. Warrendale, Penn: Materials Research Society, 1998.
Den vollen Inhalt der Quelle findenShinde, Subhash. Interfaces in High-Tc Superconducting Systems. Springer, 2013.
Den vollen Inhalt der Quelle findenHan, Weimin. NMR study of GaAs at high temperature. 1992.
Den vollen Inhalt der Quelle findenGermany) European Conference on High Temperature Electronics (3rd : 1999 : Berlin. Hiten 99: The Third European Conference on High Temperature Electronics. Institute of Electrical & Electronics Enginee, 1999.
Den vollen Inhalt der Quelle findenHartnagel, Hans, Guillermo Carpintero, Enrique Garcia-Munoz, Sascha Preu und Antti Räisänen. Semiconductor TeraHertz Technology: Devices and Systems at Room Temperature Operation. Wiley & Sons, Limited, John, 2015.
Den vollen Inhalt der Quelle findenHartnagel, Hans, Guillermo Carpintero, Enrique Garcia-Munoz, Sascha Preu und Antti Raisanen. Semiconductor TeraHertz Technology: Devices and Systems at Room Temperature Operation. Wiley & Sons, Incorporated, John, 2015.
Den vollen Inhalt der Quelle findenHartnagel, Hans, Guillermo Carpintero, Enrique Garcia-Munoz, Sascha Preu und Antti Raisanen. Semiconductor TeraHertz Technology: Devices and Systems at Room Temperature Operation. Wiley & Sons, Incorporated, John, 2015.
Den vollen Inhalt der Quelle findenDikmen, Cemal Tamer. Modeling and design of semiconductor devices and integrated circuits for high-temperature electronics. 1994.
Den vollen Inhalt der Quelle findenWide-Bandgap Semiconductors for High Power, High Frequency and High Temperature: Symposium Held April 13-15, 1998, San Francisco, California, U.S.A (Materials Research Society Symposium Proceedings). Materials Research Society, 1998.
Den vollen Inhalt der Quelle finden(Editor), Hans D. Hochheimer, und Richard E. Etters (Editor), Hrsg. Frontiers of High Pressure Research (NATO Science Series: B:). Springer, 1992.
Den vollen Inhalt der Quelle findenBakker, Anton, und Johan H. Huijsing. High-Accuracy CMOS Smart Temperature Sensors (The Kluwer International Series in Engineering and Computer Science Volume 595) (The Springer International Series in Engineering and Computer Science). Springer, 2000.
Den vollen Inhalt der Quelle findenAtomic layer growth and processing: Symposium held April 29 - May 1, Anaheim, California, U.S.A. Pittsburgh: Materials Research Society, 1991.
Den vollen Inhalt der Quelle findenFast risetime reverse bias pulse failures in SiC PN junction diodes. [Washington, DC]: National Aeronautics and Space Administration, 1996.
Den vollen Inhalt der Quelle findenMaterials for High-Temperature Semiconductor Devices. Washington, D.C.: National Academies Press, 1995. http://dx.doi.org/10.17226/5023.
Der volle Inhalt der QuelleCommittee on Materials for High-Temperature Semiconductor Devices. Materials for High-Temperature Semiconductor Devices. National Academies Press, 1995.
Den vollen Inhalt der Quelle findenCommittee on Materials for High-Temperature Semiconductor Devices. Materials for High-Temperature Semiconductor Devices. National Academies Press, 1995.
Den vollen Inhalt der Quelle findenCommittee on Materials for High-Temperature Semiconductor Devices. Materials for High-Temperature Semiconductor Devices. National Academies Press, 1995.
Den vollen Inhalt der Quelle findenCharacteristics of III-V semiconductor devices at high temperature. [Washington, D.C.]: National Aeronautics and Space Administration, 1994.
Den vollen Inhalt der Quelle findenNeuenschwander, Jürg. A high pressure low temperature study on rare earth compounds: Semiconductor to metal transition. 1988.
Den vollen Inhalt der Quelle findenQueisser, H. J. Festkörper Probleme: Plenary Lectures of the Divisions Semiconductor Physics, Surface Physics, Low Temperature Physics, High Polymers, Thermodynamics and Statistical Mechanics, of the German Physical Society, Münster, March 19-24 1973. Elsevier Science & Technology Books, 2013.
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