Auswahl der wissenschaftlichen Literatur zum Thema „High temperature semiconductors“
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Zeitschriftenartikel zum Thema "High temperature semiconductors"
TREW, R. J., und M. W. SHIN. „HIGH FREQUENCY, HIGH TEMPERATURE FIELD-EFFECT TRANSISTORS FABRICATED FROM WIDE BAND GAP SEMICONDUCTORS“. International Journal of High Speed Electronics and Systems 06, Nr. 01 (März 1995): 211–36. http://dx.doi.org/10.1142/s0129156495000067.
Der volle Inhalt der QuellePalmstrøm, Chris. „Epitaxial Heusler Alloys: New Materials for Semiconductor Spintronics“. MRS Bulletin 28, Nr. 10 (Oktober 2003): 725–28. http://dx.doi.org/10.1557/mrs2003.213.
Der volle Inhalt der QuelleMa, Xi Ying. „Study of the Electrical Properties of Monolayer MoS2 Semiconductor“. Advanced Materials Research 651 (Januar 2013): 193–97. http://dx.doi.org/10.4028/www.scientific.net/amr.651.193.
Der volle Inhalt der QuelleWESSELS, B. W. „MAGNETORESISTANCE OF NARROW GAP MAGNETIC SEMICONDUCTOR HETEROJUNCTIONS“. SPIN 03, Nr. 04 (Dezember 2013): 1340011. http://dx.doi.org/10.1142/s2010324713400110.
Der volle Inhalt der QuelleDezaki, Hikari, Meng Long Jing, Sundararajan Balasekaran, Tadao Tanabe und Yutaka Oyama. „Room Temperature Terahertz Emission via Intracenter Transition in Semiconductors“. Key Engineering Materials 500 (Januar 2012): 66–69. http://dx.doi.org/10.4028/www.scientific.net/kem.500.66.
Der volle Inhalt der QuelleGuyenot, M., M. Reinold, Y. Maniar und M. Rittner. „Advanced wire bonding for high reliability and high temperature applications“. International Symposium on Microelectronics 2016, Nr. 1 (01.10.2016): 000214–18. http://dx.doi.org/10.4071/isom-2016-wa51.
Der volle Inhalt der QuelleZhao, Youyang, Charles Rinzler und Antoine Allanore. „Molten Semiconductors for High Temperature Thermoelectricity“. ECS Journal of Solid State Science and Technology 6, Nr. 3 (05.12.2016): N3010—N3016. http://dx.doi.org/10.1149/2.0031703jss.
Der volle Inhalt der QuelleChen, Sheng. „Theory And Application of Gallium Nitride Based Dilute Magnetic Semiconductors“. Highlights in Science, Engineering and Technology 81 (26.01.2024): 286–90. http://dx.doi.org/10.54097/26qm0041.
Der volle Inhalt der QuelleKappert, Holger, Sebastian Braun, Norbert Kordas, Stefan Dreiner und Rainer Kokozinski. „High Temperature GaN Gate Driver in SOI CMOS Technology“. Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2016, HiTEC (01.01.2016): 000112–15. http://dx.doi.org/10.4071/2016-hitec-112.
Der volle Inhalt der QuelleTournier, Dominique, Pierre Brosselard, Christophe Raynaud, Mihai Lazar, Herve Morel und Dominique Planson. „Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature Applications“. Advanced Materials Research 324 (August 2011): 46–51. http://dx.doi.org/10.4028/www.scientific.net/amr.324.46.
Der volle Inhalt der QuelleDissertationen zum Thema "High temperature semiconductors"
Skelland, Neil David. „High temperature ion implantation into insulators“. Thesis, University of Sussex, 1994. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.359076.
Der volle Inhalt der QuelleVanpeteghem, Carine B. „High-pressure high-temperature structural studies of binary semiconductors“. Thesis, University of Edinburgh, 2000. http://hdl.handle.net/1842/11496.
Der volle Inhalt der QuelleBloom, Scott Harris. „Superconducting and normal compounds : some high field/high pressure effects /“. Thesis, Connect to Dissertations & Theses @ Tufts University, 1989.
Den vollen Inhalt der Quelle findenSubmitted to the Dept. of Physics. Includes bibliographical references (leaves 192-204). Access restricted to members of the Tufts University community. Also available via the World Wide Web;
Nilsson, Joakim. „Wireless, Single Chip, High Temperature Monitoring of Power Semiconductors“. Licentiate thesis, Luleå tekniska universitet, EISLAB, 2016. http://urn.kb.se/resolve?urn=urn:nbn:se:ltu:diva-18113.
Der volle Inhalt der QuelleGodkänd; 2016; 20160304 (joanil); Nedanstående person kommer att hålla licentiatseminarium för avläggande av teknologie licentiatexamen. Namn: Joakim Nilsson Ämne: Industriell Elektronik/Industrial Electronics Uppsats: Wireless, Single Chip, High Temperature Monitoring of Power Semiconductors Examinator: Docent Jonny Johansson, Institutionen för system- och rymdteknik, Avdelning: EISLAB, Luleå tekniska universitet. Diskutant: Docent Johan Sidén, Avdelningen för Elektronikkonstruktion, Mittuniversitetet, Sundsvall. Tid: Tisdag 3 maj, 2016 kl 8.30 Plats: A1547, Luleå tekniska universitet
Puchkov, Anton V. „The doping dependence of the optical properties of high-temperature superconductors /“. *McMaster only, 1996.
Den vollen Inhalt der Quelle findenJansson, Rasmus. „Completion of the software required for a high-temperature DLTS setup“. Thesis, Uppsala universitet, Institutionen för teknikvetenskaper, 2013. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-205076.
Der volle Inhalt der QuelleDLTS investigation of wide bandgap materials
Diamond electronics
Barclay, Joshua David. „High Temperature Water as an Etch and Clean for SiO2 and Si3N4“. Thesis, University of North Texas, 2018. https://digital.library.unt.edu/ark:/67531/metadc1404614/.
Der volle Inhalt der QuelleKhan-Cheema, Umar Manzoor. „Vertical transport through an InAs/GaSb heterojunction at high pressures and magnetic fields“. Thesis, University of Oxford, 1996. http://ora.ox.ac.uk/objects/uuid:fc7eef99-19d3-4d38-81c7-a84657282e8b.
Der volle Inhalt der QuelleColmenares, Juan. „Extreme Implementations of Wide-Bandgap Semiconductors in Power Electronics“. Doctoral thesis, KTH, Elkraftteknik, 2016. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-192626.
Der volle Inhalt der QuelleQC 20160922
Haskel, Daniel. „Local structural studies of oriented high temperature superconducting cuprates by polarized XAFS spectroscopy /“. Thesis, Connect to this title online; UW restricted, 1998. http://hdl.handle.net/1773/9712.
Der volle Inhalt der QuelleBücher zum Thema "High temperature semiconductors"
M, Willander, und Hartnagel Hans 1934-, Hrsg. High temperature electronics. London: Chapman & Hall, 1997.
Den vollen Inhalt der Quelle findenNational Research Council (U.S.). Committee on Materials for High-Temperature Semiconductor Devices., Hrsg. Materials for high-temperature semiconductor devices. Washington, D.C: National Academy Press, 1995.
Den vollen Inhalt der Quelle findenBakker, Anton. High-accuracy CMOS smart temperature sensors. Boston, MA: Kluwer Academic Publishers, 2000.
Den vollen Inhalt der Quelle findenChristou, A. Reliability of high temperature electronics. College Park, Md: Center for Reliability Engineering, University of Maryland, 1996.
Den vollen Inhalt der Quelle findenBakker, Anton. High-Accuracy CMOS Smart Temperature Sensors. Boston, MA: Springer US, 2000.
Den vollen Inhalt der Quelle findenuniversitet, Uppsala, Hrsg. Dynamic magnetic properties of high temperature superconductors at low fields. Uppsala: Acta Universitatis Upsaliensis, 1997.
Den vollen Inhalt der Quelle findenCorvasce, Chiara. Mobility and impact ionization in silicon at high temperature. Konstanz: Hartung-Gorre, 2007.
Den vollen Inhalt der Quelle findenCorvasce, Chiara. Mobility and impact ionization in silicon at high temperature. Konstanz: Hartung-Gorre, 2007.
Den vollen Inhalt der Quelle findenL, Shindé Subhash, und Rudman David Albert, Hrsg. Interfaces in high-Tc superconducting systems. New York: Springer-Verlag, 1994.
Den vollen Inhalt der Quelle findenLongya, Xu, Zhu Lu und United States. National Aeronautics and Space Administration., Hrsg. A thermal and electrical analysis of power semiconductor devices: Research report. [Washington, DC: National Aeronautics and Space Administration, 1997.
Den vollen Inhalt der Quelle findenBuchteile zum Thema "High temperature semiconductors"
Hartnagel, H. L. „High temperature electronics based on compound semiconductors“. In High Temperature Electronics, 161–72. Boston, MA: Springer US, 1997. http://dx.doi.org/10.1007/978-1-4613-1197-3_6.
Der volle Inhalt der QuelleEzaki, T., N. Mori, H. Momose, K. Taniguchi und C. Hamaguchi. „Electron Transport in Quantum Wires at High Temperature“. In Hot Carriers in Semiconductors, 243–46. Boston, MA: Springer US, 1996. http://dx.doi.org/10.1007/978-1-4613-0401-2_56.
Der volle Inhalt der QuelleHultquist, Gunnar, C. Anghel und P. Szakàlos. „Effects of Hydrogen on the Corrosion Resistance of Metallic Materials and Semiconductors“. In High-Temperature Oxidation and Corrosion 2005, 139–46. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-409-x.139.
Der volle Inhalt der QuelleOhta, Hiromichi, S. Ohta und K. Koumoto. „High-Temperature Thermoelectric Performance of Strontium Titanate Degenerate Semiconductors“. In Ceramic Transactions Series, 343–48. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2011. http://dx.doi.org/10.1002/9781118144121.ch33.
Der volle Inhalt der QuelleFukumura, Tomoteru, und Masashi Kawasaki. „Magnetic Oxide Semiconductors: On the High-Temperature Ferromagnetism in TiO2- and ZnO-Based Compounds“. In Functional Metal Oxides, 89–131. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2013. http://dx.doi.org/10.1002/9783527654864.ch3.
Der volle Inhalt der QuelleBak-Misiuk, J., A. Misiuk, J. Adamczewska, M. Calamiotou, A. Kozanecki, D. Kuristyn, K. Reginski, J. Kaniewski und A. Georgakilas. „Effect of High Temperature-Pressure on Strain Relaxation in Thin Layers of Semiconductors Epitaxially Grown on Gaas and Si Substrates“. In Atomistic Aspects of Epitaxial Growth, 467–75. Dordrecht: Springer Netherlands, 2002. http://dx.doi.org/10.1007/978-94-010-0391-9_36.
Der volle Inhalt der QuelleRötger, T., G. J. C. L. Bruls, J. C. Maan, P. Wyder, K. Ploog und G. Weimann. „Connection Between Low and High Temperature Magneto-transport Measurements in GaAs/GaAlAs Heterojunctions“. In High Magnetic Fields in Semiconductor Physics II, 215–19. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-83810-1_35.
Der volle Inhalt der QuelleDammann, M., T. Stockmeier und H. Baltes. „Minority carrier lifetime measurements after high temperature pre-treatment“. In Crucial Issues in Semiconductor Materials and Processing Technologies, 299–304. Dordrecht: Springer Netherlands, 1992. http://dx.doi.org/10.1007/978-94-011-2714-1_29.
Der volle Inhalt der QuelleGimenez, Salvador Pinillos, und Egon Henrique Salerno Galembeck. „The Electrical Characteristics of the Semiconductor at High Temperatures“. In Differentiated Layout Styles for MOSFETs, 27–39. Cham: Springer International Publishing, 2023. http://dx.doi.org/10.1007/978-3-031-29086-2_3.
Der volle Inhalt der QuelleWillett, R. L., H. L. Stormer, D. C. Tsui, L. N. Pfeiffer und K. W. West. „Temperature Dependence of Transport Coefficients of 2D Electron Systems at Very Small Filling Factors“. In High Magnetic Fields in Semiconductor Physics II, 153–56. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-83810-1_25.
Der volle Inhalt der QuelleKonferenzberichte zum Thema "High temperature semiconductors"
Ikossi-Anastasiou, Kiki, Andris Ezis, Keith Evans und Charles E. Stutz. „Low-temperature characterization of high-current-gain AlGaAs/GaAs narrow-base heterojunction bipolar transistor“. In Semiconductors '92, herausgegeben von John E. Bowers und Umesh K. Mishra. SPIE, 1992. http://dx.doi.org/10.1117/12.137715.
Der volle Inhalt der QuelleKhokhlov, Dmitry. „Mixed Valence Puzzle in Doped IV-VI Semiconductors and its Applied Output: High-Performance Terahertz Photodetectors“. In LOW TEMPERATURE PHYSICS: 24th International Conference on Low Temperature Physics - LT24. AIP, 2006. http://dx.doi.org/10.1063/1.2355325.
Der volle Inhalt der QuelleFriedrich, A. „Very High Temperature Operation of ∼ 5.75 μm Quantum Cascade Lasers“. In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27. AIP, 2005. http://dx.doi.org/10.1063/1.1994716.
Der volle Inhalt der QuelleKolodzey, James. „High Power, High Temperature Terahertz Emitters Based on Electronic Processes in Semiconductors“. In International Conference on Fibre Optics and Photonics. Washington, D.C.: OSA, 2014. http://dx.doi.org/10.1364/photonics.2014.m2b.2.
Der volle Inhalt der QuelleBarker, John R. „Quantised Vortex Flows And Conductance Fluctuations In High Temperature Atomistic Silicon MOSFET Devices“. In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27. AIP, 2005. http://dx.doi.org/10.1063/1.1994680.
Der volle Inhalt der QuelleVoevodin, Valerii G., und Olga V. Voevodina. „Thermodynamics of self-propagating high-temperature synthesis of ternary semiconductors“. In Material Science and Material Properties for Infrared Optoelectronics, herausgegeben von Fiodor F. Sizov und Vladimir V. Tetyorkin. SPIE, 1997. http://dx.doi.org/10.1117/12.280457.
Der volle Inhalt der QuelleTakahashi, Ryo. „Switching in low-temperature-grown InGaAs MQWs“. In Nonlinear Guided Waves and Their Applications. Washington, D.C.: Optica Publishing Group, 1998. http://dx.doi.org/10.1364/nlgw.1998.nthb.1.
Der volle Inhalt der QuelleGilbertson, Adam, C. J. Lambert, S. A. Solin und L. F. Cohen. „High resolution InSb quantum well ballistic nanosensors for room temperature applications“. In THE PHYSICS OF SEMICONDUCTORS: Proceedings of the 31st International Conference on the Physics of Semiconductors (ICPS) 2012. AIP, 2013. http://dx.doi.org/10.1063/1.4848310.
Der volle Inhalt der QuelleLebey, Thierry, Ichiro Omura, Masahiro Kozako, Hiroki Kawano und Masayuki Hikita. „High temperature high voltage packaging of wideband gap semiconductors using gas insulating medium“. In 2010 International Power Electronics Conference (IPEC - Sapporo). IEEE, 2010. http://dx.doi.org/10.1109/ipec.2010.5543854.
Der volle Inhalt der QuelleSapozhnikov, Sergey Z., Vladimir Yu Mityakov, Andrey V. Mityakov, Andrey A. Snarskii und Maxim I. Zhenirovskyy. „High-Temperature Heat Transfer Investigations Using Heterogeneous Gradient Sensors“. In 2010 14th International Heat Transfer Conference. ASMEDC, 2010. http://dx.doi.org/10.1115/ihtc14-22527.
Der volle Inhalt der QuelleBerichte der Organisationen zum Thema "High temperature semiconductors"
Siskaninetz, William J., Hank D. Jackson, James E. Ehret, Jeffrey C. Wiemeri und John P. Loehr. High-Temperature High-Frequency Operation of Single and Multiple Quantum Well InGaAs Semiconductor Lasers. Fort Belvoir, VA: Defense Technical Information Center, November 2000. http://dx.doi.org/10.21236/ada398284.
Der volle Inhalt der QuelleNordheden, Karen J., und Linda J. Olafsen. High Efficiency, Room Temperature Mid-Infrared Semiconductor Laser Development for IR Countermeasures. Fort Belvoir, VA: Defense Technical Information Center, Mai 2009. http://dx.doi.org/10.21236/ada501427.
Der volle Inhalt der QuellePark, Gil Han, und Jin-Joo Song. BMDO-AASERT: Group III Nitride Semiconductor Nanostructure Research MOCVD Growth and Novel Characterizations of High Temperature, High Carrier Density and Microcrack Lasing Effects. Fort Belvoir, VA: Defense Technical Information Center, Dezember 2001. http://dx.doi.org/10.21236/ada397734.
Der volle Inhalt der QuelleRuddy, Frank H. Multipurpose Radiation Resistant Semiconductor Detectors for Alpha, Neutron & Low Energy Gamma Ray Measurements at High Temperatures in High-Intensity Gamma Ray. Office of Scientific and Technical Information (OSTI), Juni 2005. http://dx.doi.org/10.2172/884848.
Der volle Inhalt der QuelleRuddy, Frank H. Multipurpose Radiation Resistant Semiconductor Detectors for Alpha, Neutron & Low Energy Gamma Ray Measurements at High Temperatures in High-Intensity Gamma Ray. Office of Scientific and Technical Information (OSTI), Juni 2005. http://dx.doi.org/10.2172/884856.
Der volle Inhalt der QuelleRuddy, Frank H. Multipurpose Radiation Resistant Semiconductor Detectors for Alpha, Neutron & Low Energy Gamma Ray Measurements at High Temperatures in High-Intensity Gamma Ray. Office of Scientific and Technical Information (OSTI), Juni 2005. http://dx.doi.org/10.2172/884866.
Der volle Inhalt der QuelleRuddy, Frank H. Multipurpose Radiation Resistant Semiconductor Detectors for Alpha, Neutron & Low Energy Gamma Ray Measurements at High Temperatures in High-Intensity Gamma Ray. Office of Scientific and Technical Information (OSTI), Juni 2005. http://dx.doi.org/10.2172/885081.
Der volle Inhalt der QuelleRuddy, Frank H. Multipurpose Radiation Resistant Semiconductor Detectors for Alpha, Neutron & Low Energy Gamma Ray Measurements at High Temperatures in High-Intensity Gamma Ray. Office of Scientific and Technical Information (OSTI), Juni 2005. http://dx.doi.org/10.2172/885414.
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