Thematische Bibliographien / GaN-on-Si

Inhaltsverzeichnis

  1. Zeitschriftenartikel
  2. Dissertationen
  3. Bücher
  4. Buchteile
  5. Konferenzberichte
  6. Berichte der Organisationen

Auswahl der wissenschaftlichen Literatur zum Thema „GaN-on-Si“

Autor: Grafiati
Veröffentlicht am 29. März 2025

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Zeitschriftenartikel zum Thema "GaN-on-Si"

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Jang, Soohwan, F. Ren, S. J. Pearton, B. P. Gila, M. Hlad, C. R. Abernathy, Hyucksoo Yang et al. „Si-diffused GaN for enhancement-mode GaN mosfet on si applications“. Journal of Electronic Materials 35, Nr. 4 (April 2006): 685–90. http://dx.doi.org/10.1007/s11664-006-0121-1.

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Zhou, W. L., F. Namavar, P. C. Colter, M. Yoganathan, M. W. Leksono und J. I. Pankove. „Characterization of GaN Grown on SiC on Si/SiO2/Si by Metalorganic Chemical Vapor Deposition“. Journal of Materials Research 14, Nr. 4 (April 1999): 1171–74. http://dx.doi.org/10.1557/jmr.1999.0155.

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SiC (3C-SiC) was grown on the top Si layer of SIMOX (Si/SiO2/Si) by carbonization followed by chemical vapor deposition (CVD). Subsequently, GaN was deposited on the SiC by metalorganic (MO) CVD to produce a GaN/SiC/Si/SiO2/Si multilayer structure. This multilayer film was investigated by conventional transmission electron microscopy (TEM) and high-resolution (HR) TEM from cross-sectional view. The GaN layer was found to consist of predominately hexagonal gallium nitride (h-GaN), and a small fraction of cubic GaN (c-GaN) crystallites. The orientation relationship between most of the h-GaN grains and SiC (3C-SiC) was found to be (0001)Ga N||s(111)SiC; [1120]GaN||[110]SiC, while most of the c-GaN grains had an orientation relationship (001)GaN||(001)SiC; [110]GaN||[110]SiC with respect to 3C-SiC substrate. The hexagonal grains of GaN were found to grow as two variants. The defects in both h-GaN and c-GaN are also discussed.
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Chowdhury, Nadim, Jori Lemettinen, Qingyun Xie, Yuhao Zhang, Nitul S. Rajput, Peng Xiang, Kai Cheng, Sami Suihkonen, Han Wui Then und Tomas Palacios. „p-Channel GaN Transistor Based on p-GaN/AlGaN/GaN on Si“. IEEE Electron Device Letters 40, Nr. 7 (Juli 2019): 1036–39. http://dx.doi.org/10.1109/led.2019.2916253.

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4

Schulze, F., A. Dadgar, J. Bläsing und A. Krost. „GaN heteroepitaxy on Si(001)“. Journal of Crystal Growth 272, Nr. 1-4 (Dezember 2004): 496–99. http://dx.doi.org/10.1016/j.jcrysgro.2004.08.065.

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Krost, A., und A. Dadgar. „GaN-Based Devices on Si“. physica status solidi (a) 194, Nr. 2 (Dezember 2002): 361–75. http://dx.doi.org/10.1002/1521-396x(200212)194:2<361::aid-pssa361>3.0.co;2-r.

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Dadgar, Armin. „Sixteen years GaN on Si“. physica status solidi (b) 252, Nr. 5 (25.02.2015): 1063–68. http://dx.doi.org/10.1002/pssb.201451656.

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7

Hsu, Lung-Hsing, Yung-Yu Lai, Po-Tsung Tu, Catherine Langpoklakpam, Ya-Ting Chang, Yu-Wen Huang, Wen-Chung Lee et al. „Development of GaN HEMTs Fabricated on Silicon, Silicon-on-Insulator, and Engineered Substrates and the Heterogeneous Integration“. Micromachines 12, Nr. 10 (27.09.2021): 1159. http://dx.doi.org/10.3390/mi12101159.

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GaN HEMT has attracted a lot of attention in recent years owing to its wide applications from the high-frequency power amplifier to the high voltage devices used in power electronic systems. Development of GaN HEMT on Si-based substrate is currently the main focus of the industry to reduce the cost as well as to integrate GaN with Si-based components. However, the direct growth of GaN on Si has the challenge of high defect density that compromises the performance, reliability, and yield. Defects are typically nucleated at the GaN/Si heterointerface due to both lattice and thermal mismatches between GaN and Si. In this article, we will review the current status of GaN on Si in terms of epitaxy and device performances in high frequency and high-power applications. Recently, different substrate structures including silicon-on-insulator (SOI) and engineered poly-AlN (QST®) are introduced to enhance the epitaxy quality by reducing the mismatches. We will discuss the development and potential benefit of these novel substrates. Moreover, SOI may provide a path to enable the integration of GaN with Si CMOS. Finally, the recent development of 3D hetero-integration technology to combine GaN technology and CMOS is also illustrated.
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Liang, Fangzhou, Wen Chen, Meixin Feng, Yingnan Huang, Jianxun Liu, Xiujian Sun, Xiaoning Zhan, Qian Sun, Qibao Wu und Hui Yang. „Effect of Si Doping on the Performance of GaN Schottky Barrier Ultraviolet Photodetector Grown on Si Substrate“. Photonics 8, Nr. 2 (23.01.2021): 28. http://dx.doi.org/10.3390/photonics8020028.

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GaN Schottky barrier ultraviolet photodetectors with unintentionally doped GaN and lightly Si-doped n−-GaN absorption layers were successfully fabricated, respectively. The high-quality GaN films on the Si substrate both have a fairly low dislocation density and point defect concentration. More importantly, the effect of Si doping on the performance of the GaN-on-Si Schottky barrier ultraviolet photodetector was studied. It was found that light Si doping in the absorption layer can significantly increase the responsivity under reverse bias, which might be attributed to the persistent photoconductivity that originates from the lowering of the Schottky barrier height. In addition, the devices with unintentionally doped GaN demonstrated a relatively high-speed photo response. We briefly studied the mechanism of changes in Schottky barrier, dark current and the characteristic of response time.
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Кукушкин, С. А., А. М. Мизеров, А. С. Гращенко, А. В. Осипов, Е. В. Никитина, С. Н. Тимошнев, А. Д. Буравлев und М. С. Соболев. „Фотоэлектрические свойства слоев GaN, выращенных методом молекулярно-лучевой эпитаксии с плазменной активацией на подложках Si(111) и эпитаксиальных слоях SiC на Si(111)“. Физика и техника полупроводников 53, Nr. 2 (2019): 190. http://dx.doi.org/10.21883/ftp.2019.02.47097.8915.

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AbstractThe photoelectric properties of GaN/SiC/Si(111) and GaN/Si(111) heterostructures grown by plasma-assisted molecular-beam epitaxy under the same growth conditions on identical silicon substrates, but with different buffer layers, are experimentally investigated. The GaN/SiC/Si(111) structure is formed on a Si substrate with the SiC buffer layer grown by a new atom-substitution technique and the GaN/Si(111) structure, on a Si substrate subjected to pre-epitaxial plasma nitridation. The significant effect of carbon-vacancy clusters contained in the SiC layer on the growth of the GaN layer and its optical and photoelectric properties is found. It is experimentally established that the GaN/SiC/Si(111) heterostructure has a higher photosensitivity than the GaN/Si(111) heterostructure. In the GaN/SiC/Si(111) heterostructure, the coexistence of two oppositely directed p – n junctions is observed. One p – n junction forms at the SiC/Si interface and the other, at the GaN/SiC interface. It is shown that the occurrence of an electric barrier in the GaN/Si(111) heterostructure at the GaN/Si(111) heterointerface is caused by the formation of a thin silicon-nitride transition layer during pre-epitaxial plasma nitridation of the Si(111) substrate.
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MANOHAR, S., A. PHAM, J. BROWN, R. BORGES und K. LINTHICUM. „MICROWAVE GaN-BASED POWER TRANSISTORS ON LARGE-SCALE SILICON WAFERS“. International Journal of High Speed Electronics and Systems 13, Nr. 01 (März 2003): 265–75. http://dx.doi.org/10.1142/s0129156403001600.

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This paper presents the development of microwave Gallium nitride (GaN) heterostructure field-effect transistors (HFETs) on silicon (Si). GaN-on-Si provides a low-cost manufacturable platform that could lead to the commercialization of GaN-based power devices for wireless applications. Small periphery GaN high electron mobility transistors (HEMTs) on Si exhibited a maximum drain current of 900mA/mm, a peak gm of 300 mS/mm, and a microwave output power density of 1.5 W/mm at 2 GHz. Microwave characterization and device modeling of GaN HEMTs on Si are discussed.
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Dissertationen zum Thema "GaN-on-Si"

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Xu, Zhongjie, und 徐忠杰. „Molecular beam epitaxial growth of GaN on Si(111) substrate“. Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2010. http://hub.hku.hk/bib/B45866338.

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Tanaka, Shigeyasu, Yoshio Honda und Nobuhiko Sawaki. „Structural characterization of GaN laterally overgrown on a (111)Si substrate“. American Institute of Physics, 2001. http://hdl.handle.net/2237/6985.

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Weiß, Beatrix [Verfasser], und Oliver [Akademischer Betreuer] Ambacher. „Fast-switching monolithically integrated high-voltage GaN-on-Si power converters“. Freiburg : Universität, 2017. http://d-nb.info/1156851726/34.

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Eblabla, Abdalla. „MM-wave frequencies GaN-on-Si HEMTs and MMIC technology development“. Thesis, University of Glasgow, 2018. http://theses.gla.ac.uk/8861/.

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Gallium Nitride (GaN)-based High Electron Mobility Transistors (HEMTs) grown on Silicon (Si) substrates technology is emerging as one of the most promising candidates for cost effective, high-power, high-frequency Integrated Circuit (IC) applications; operating at Microwave and Millimetre (mm)-wave frequencies. To capitalise on the advantages of RF GaN technology grown on Low resistivity (LR) Si substrates; RF losses due to the Si substrate must be eliminated at the active devices, passive devices and interconnect. Low resistivity Si substrates are intrinsic prone to RF losses and high resistivity (HR) Si substrates shown to exhibit RF losses as a result of operating substrate temperature at the system level. Therefore, obtaining a viable high-performance RF GaN-on both LR and HR Si device remains a challenge for this technology. In an attempt to overcome these issues, Microwave Monolithic Integrated Circuit (MMIC)-compatible technology was developed for the first time aiming to eliminate the substrate coupling effect for the realisation of high performance passive and active devices on GaN-on-Si substrates for mm-wave MMIC applications.
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Tanaka, Shigeyasu, Yasutoshi Kawaguchi, Nobuhiko Sawaki, Michio Hibino und Kazumasa Hiramatsu. „Defect structure in selective area growth GaN pyramid on (111)Si substrate“. American Institute of Physics, 2000. http://hdl.handle.net/2237/6983.

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Meyer, Walter Ernst. „Digital DLTS studies on radiation induced defects in Si, GaAs and GaN“. Pretoria : [s.n.], 2006. http://upetd.up.ac.za/thesis/available/etd-06182007-143820.

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El, Zammar Georgio. „Process of high power Schottky diodes on the AlGaN/GaN heterostructure epitaxied on Si“. Thesis, Tours, 2017. http://www.theses.fr/2017TOUR4030/document.

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Les convertisseurs à base de Si atteignent leurs limites. Face à ces besoins, le GaN, avec sa vitesse de saturation des électrons et le champ électrique de claquage élevés est candidat idéal pour réaliser des redresseurs, surtout s’il est épitaxié sur substrat à bas cout. Ce travail est dédié au développement des diodes Schottky sur AlGaN/GaN. Une couche de SiNx en faible traction a été obtenue. Un contact ohmique de Ti/Al avec une gravure partiel a donné une Rc de 2.8 Ω.mm avec une résistance Rsh de 480 Ω/□. Des diodes Schottky avec les étapes issues de ces études ont été fabriqué. La diode recuite à 400 °C avec 30 nm de profondeur de gravure a montré une hauteur de barrière de 0,82 eV et un facteur d'idéalité de 1,49. La diode a présenté une très faible densité de courant de fuite de 8.45x10-8 A.mm-1 à -400 V avec une tension de claquage entre 480 V et 750 V
Si-based devices for power conversion applications are reaching their limits. Wide band gap GaN is particularly interesting due to the high electron saturation velocity and high breakdown electric field, especially when epitaxied on low cost substrates such as Si. This work was dedicated to the development and fabrication of the Schottky diode on AlGaN/GaN on Si. SiNx passivation in very low tensile strain is used. Ti (70 nm)/Al (180 nm) partially recessed ohmic contacts annealed at 800 ºC exhibited a 2.8 Ω.mm Rc with a sheet resistance of 480 Ω/sq. Schottky diodes with the previously cited passivation and ohmic contact were fabricated with a fully recessed Schottky contact annealed at 400 ºC. A Schottky barrier height of 0.82 eV and an ideality factor of 1.49 were obtained. These diodes also exhibited a very low leakage current density (up to -400 V) of 8.45x10-8 A.mm-1. The breakdown voltage varied between 480 V and 750 V
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Kemper, Ricarda Maria [Verfasser]. „Cubic GaN on Pre-Patterned 3C-SiC/Si (001) Substrates / Ricarda Maria Kemper“. Paderborn : Universitätsbibliothek, 2014. http://d-nb.info/1058180649/34.

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Wang, Yong. „Research on improvement of breakdown voltage of AlGaN/GaN HEMTs grown on Si(111) substrates by MOCVD /“. View abstract or full-text, 2009. http://library.ust.hk/cgi/db/thesis.pl?ECED%202009%20WANGY.

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Liang, Hu. „Fabrication of high power InGaN/GaN multiple quantum well blue LEDs grown on patterned Si substrates /“. View abstract or full-text, 2008. http://library.ust.hk/cgi/db/thesis.pl?ECED%202008%20LIANG.

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Bücher zum Thema "GaN-on-Si"

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Liu, Shanqing. Gan nan Su qu si da qu yu gong ye zhen xing yan jiu: Research on industrial revitalization of four major regions in Gannan. Beijing Shi: Jing ji guan li chu ban she, 2019.

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Wei, Xing. Zhongguo gong si bing gou zhong zheng fu gan yu xiao ying ji qi zhi neng ding wei yan jiu: Research on government intervention and function positioning in enterprise M&A in China. Beijing Shi: Jing ji guan li chu ban she, 2017.

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Gong si si fa gan yu ji li yan jiu: Yi fa jing ji xue wei shi jiao = Study on mechanism of judicial intervention to company. Beijing Shi: Beijing da xue chu ban she, 2012.

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Zhongguo gong yong shi ye min ying hua gai ge de ruo gan fan si: Some reflections on utilities privatization reform. Beijing Shi: Zhongguo jing ji chu ban she, 2012.

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"Gan jue zhu yi" de pu xi: Xin shi xue shi nian de fan si zhi lü = A personal reflection on Chinese new history. Beijing: Beijing da xue chu ban she, 2012.

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Xing shi si fa ji si xing hsi yong ruo gan yi nan wen ti shi li pou xi: Analysis of examples of difficult issues on criminal justice and application of death penalty. Beijing Shi: Fa lü chu ban she, 2009.

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Zhongguo xian dai fa zhi li lun yu li fa ruo gan wen ti si kao: The consideration on issues of modern Chinese legal theory and legislation. Beijing Shi: Ren min fa yuan chu ban she, 2011.

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Jiaohe gu cheng: Gan shou si chou zhi lu cheng bang gu du zhi mei = The ancient city of Jiaohe : experience the beauties of city-state and ancient capital on the silk road. [Wulumuqi Shi]: Xinjiang mei shu she ying chu ban she, 2002.

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Zhui gan xing jing ji zeng zhang li lun: Yi zhong zu zhi jing ji zeng zhang de xin si lu = Catching-up economic growth theory ; a new thought on organizing economic growth. 5. Aufl. Guangzhou: Guangdong gao deng jiao yu chu ban she, 2003.

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Shan Gan Ning Bian Qu si fa bian min li nian yu min shi su song zhi du yan jiu: On Shan Ganning's judicial idea about people's convenience and the system of civil litigation. Xiangtan Shi: Xiangtan da xue chu ban she, 2012.

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Buchteile zum Thema "GaN-on-Si"

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Jiang, Fengyi, Jianli Zhang, Qian Sun und Zhijue Quan. „GaN LEDs on Si Substrate“. In Light-Emitting Diodes, 133–70. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-319-99211-2_4.

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Dadgar, Armin, und Alois Krost. „LED Materials: GaN on Si“. In Handbook of Advanced Lighting Technology, 123–47. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-00176-0_11.

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Dadgar, Armin, und Alois Krost. „LED Materials: GaN on Si“. In Handbook of Advanced Lighting Technology, 1–21. Cham: Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-00295-8_11-1.

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Egawa, Takashi, und Osamu Oda. „LEDs Based on Heteroepitaxial GaN on Si Substrates“. In Topics in Applied Physics, 29–67. Singapore: Springer Singapore, 2017. http://dx.doi.org/10.1007/978-981-10-3755-9_3.

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Chen, Kevin J., und Shu Yang. „Recent Progress in GaN-on-Si HEMT“. In Handbook of GaN Semiconductor Materials and Devices, 347–65. Boca Raton : Taylor & Francis, CRC Press, 2017. | Series: Series in optics and optoelectronics: CRC Press, 2017. http://dx.doi.org/10.1201/9781315152011-11.

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Yablonskii, G. P., und M. Heuken. „Uv-Blue Lasers Based on Ingan/Gan/Al2O3 and on Ingan/Gan/Si Heterostructures“. In Towards the First Silicon Laser, 455–64. Dordrecht: Springer Netherlands, 2003. http://dx.doi.org/10.1007/978-94-010-0149-6_39.

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Derluyn, Joff, Marianne Germain und Elke Meissner. „Taking the Next Step in GaN: Bulk GaN Substrates and GaN-on-Si Epitaxy for Electronics“. In Integrated Circuits and Systems, 1–28. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-77994-2_1.

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Fujikawa, Y., Y. Yamada-Takamura, Z. T. Wang, G. Yoshikawa und T. Sakurai. „GaN Integration on Si via Symmetry-Converted Silicon-on-Insulator“. In Frontiers in Materials Research, 295–303. Berlin, Heidelberg: Springer Berlin Heidelberg, 2008. http://dx.doi.org/10.1007/978-3-540-77968-1_22.

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Kemper, Ricarda Maria, Donat Josef As und Jörg K. N. Lindner. „Cubic GaN on Nanopatterned 3C-SiC/Si (001) Substrates“. In Silicon-based Nanomaterials, 381–405. New York, NY: Springer New York, 2013. http://dx.doi.org/10.1007/978-1-4614-8169-0_15.

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Egawa, Takashi, und Osamu Oda. „Epitaxy Part A. LEDs Based on Heteroepitaxial GaN on Si Substrates“. In Topics in Applied Physics, 27–58. Dordrecht: Springer Netherlands, 2013. http://dx.doi.org/10.1007/978-94-007-5863-6_3.

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Konferenzberichte zum Thema "GaN-on-Si"

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Stabentheiner, M., D. Tilly, T. Schinnerl, A. A. Taylor, P. Javernik, M. Novak, C. Ostermaier und D. Pogany. „Identification and Characterization of Conductive Dislocations in p-GaN/AlGaN/GaN Heterojunctions on GaN-on-Si Substrates“. In ISTFA 2024, 146–52. ASM International, 2024. http://dx.doi.org/10.31399/asm.cp.istfa2024p0146.

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Abstract We present a study of dislocation conductivity under forward bias in p-GaN/AlGaN/GaN heterojunctions on a GaN-on-Si substrate, which are part of every p-GaN HEMT structure. Conductive atomic force microscopy (C-AFM) is combined with structural analysis by scanning transmission electron microscopy (STEM) and defect selective etching (DSE). The density of conductive TDs was found to be 5 × 106 cm-2, using semi-automatic measurements to gather larger statistics on a delayered HEMT sample. IV measurements show a shift in turn-on voltage at the leakage positions. To characterize the type of the conductive TDs, DSE with a KOH/NaOH melt was used. Three distinct etch pit sizes were observed after 5 s etch time, with large, medium and edge pits according to STEM characterization seemingly corresponding to screw, mixed and edge TDs, respectively. However, characterization by DSE etch pit size alone was found to be unreliable, as STEM TD typing of seven conductive TDs using two-beam diffraction conditions revealed mostly pure screw and mixed-type dislocations with medium-sized etch pits as origin of the observed leakage current. Our work highlights the limitations of DSE as a characterization method and recommends additional validation by STEM for each new material system, investigated layer, and etching setup. The implications of finding conductive TDs with screw-component under low forward bias conditions on device behavior and the limitations of the C-AFM method are discussed. Based on the results, it is not anticipated that the identified conductive TDs will have a substantial effect on a GaN HEMT device. Overall, this study provides important insights into the electrical properties of TDs and offers useful recommendations for future research in this area.
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Bader, Samuel James, Ahmad Zubair, Alvaro Latorre-Rey, Mikkel Hansen, Soumen Sarkar, Abdul Asif, Dimitri Frolov et al. „Design kit development on a 300mm GaN-on-Si demonstration platform with integrated Si pMOS“. In 2024 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 5–8. IEEE, 2024. http://dx.doi.org/10.1109/bcicts59662.2024.10745683.

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Chen, Xiaojin, Hanghai Du, Weichuan Xing, Honglang Li, Hong Zhou, Jincheng Zhang, Zhihong Liu und Yue Hao. „GaN-on-Si Solid-State Electronic Devices for Multipliers Applications“. In 2024 IEEE International Conference on IC Design and Technology (ICICDT), 1–4. IEEE, 2024. http://dx.doi.org/10.1109/icicdt63592.2024.10717741.

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Dahmani, Salim, Adama Seck Elhadji, Cyril Buttay, Bruno Allard, Hassan Maher und Ali Soltani. „Characterization and modeling protocol for GaN-on-Si power transistors“. In 2024 IEEE 11th Workshop on Wide Bandgap Power Devices & Applications (WiPDA), 1–6. IEEE, 2024. https://doi.org/10.1109/wipda62103.2024.10773354.

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Prat, Benjamin, Arnaud Pothier, Olivier Vendier, Kateryna Kiryukhina, Olivier Puig und Pierre Blondy. „Cooling of GaN-On-Si Transistors using Integrated Micromachined Channels“. In 2024 54th European Microwave Conference (EuMC), 1030–33. IEEE, 2024. http://dx.doi.org/10.23919/eumc61614.2024.10732837.

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6

Sekiya, T., T. Sasaki und K. Hane. „GaN freestanding waveguides on Si substrate for Si/GaN hybrid photonic integration“. In TRANSDUCERS 2015 - 2015 18th International Solid-State Sensors, Actuators and Microsystems Conference. IEEE, 2015. http://dx.doi.org/10.1109/transducers.2015.7181361.

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7

Hu, F. R., K. Ochi, B. S. Choi, Y. Kanamori und K. Hane. „GaN Film Grown on Si Substrate for Monolithic Optical MEMS“. In ASME 2005 Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems collocated with the ASME 2005 Heat Transfer Summer Conference. ASMEDC, 2005. http://dx.doi.org/10.1115/ipack2005-73130.

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Annotation:
GaN is a new and powerful material for photonic devices such as light emitting and laser diodes. On the other hand, optical MEMS technology is attractive for miniaturizing several optical systems. We are studying GaN film grown on Si substrate for the optical MEMS application in order to fabricate monolithic structure. In this paper, the characteristics of GaN film grown on Si substrate by MBE are reported. The growth conditions of GaN layer on Si substrate are studied. The surface morphology of the grown GaN film is measured by electron microscopy and atomic force microscopy. Furthermore, a preliminary grating structure is fabricated for a MEMS application.
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8

Xie, Zhongwei, Haoshen Zhu, Tangfei Kang, Wenquan Che und Quan Xue. „1GHz GaN MEMS Oscillator Based on GaN-on-Si MMIC Technology“. In 2022 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP). IEEE, 2022. http://dx.doi.org/10.1109/imws-amp54652.2022.10106932.

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9

Tanae, T., H. Samashima und K. Hane. „Gan comb-drive actuators on Si substrate“. In TRANSDUCERS 2011 - 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference. IEEE, 2011. http://dx.doi.org/10.1109/transducers.2011.5969614.

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10

Yan Zhao, Cen Kong, Lishu Wu, Wei Cheng und Tangsheng Chen. „AlGaN/GaN HEMTs on Si(100) substrate“. In 2014 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC). IEEE, 2014. http://dx.doi.org/10.1109/edssc.2014.7061182.

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Berichte der Organisationen zum Thema "GaN-on-Si"

1

CALIFORNIA UNIV SANTA BARBARA. Lateral Epitaxial Overgrowth of GaN on Si(111). Fort Belvoir, VA: Defense Technical Information Center, September 1998. http://dx.doi.org/10.21236/ada353896.

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2

Kuech, Thomas F. Generation of Large-Area, Crack-Free GaN Layers on Si Substrates. Fort Belvoir, VA: Defense Technical Information Center, Dezember 2001. http://dx.doi.org/10.21236/ada397736.

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3

Kaloyeros, A., S. Endisch und A. Topol. Metal-Organic Chemical Vapor Epitaxy of GaN on Si(111) for Optoelectronic Applications. Fort Belvoir, VA: Defense Technical Information Center, September 1998. http://dx.doi.org/10.21236/ada353993.

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4

Tompkins, Randy P., und Danh Nguyen. Contactless Mobility, Carrier Density, and Sheet Resistance Measurements on Si, GaN, and AlGaN/GaN High Electron Mobility Transistor (HEMT) Wafers. Fort Belvoir, VA: Defense Technical Information Center, Februar 2015. http://dx.doi.org/10.21236/ada618164.

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