Auswahl der wissenschaftlichen Literatur zum Thema „GaAs Schottky diodes“
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Zeitschriftenartikel zum Thema "GaAs Schottky diodes"
Liu, Hai Rui, und Jun Sheng Yu. „Characterization of Metal-Semiconductor Schottky Diodes and Application on THz Detection“. Advanced Materials Research 683 (April 2013): 729–32. http://dx.doi.org/10.4028/www.scientific.net/amr.683.729.
Der volle Inhalt der QuelleOzdemir, Ahmet Faruk, Adnan Calik, Guven Cankaya, Osman Sahin und Nazim Ucar. „Effect of Indentation on I-V Characteristics of Au/n-GaAs Schottky Barrier Diodes“. Zeitschrift für Naturforschung A 63, Nr. 3-4 (01.04.2008): 199–202. http://dx.doi.org/10.1515/zna-2008-3-414.
Der volle Inhalt der QuelleWeikle, Robert M., S. Nadri, C. M. Moore, N. D. Sauber, L. Xie, M. E. Cyberey, N. Scott Barker, A. W. Lichtenberger und M. Zebarjadi. „Thermal Characterization of Quasi-Vertical GaAs Schottky Diodes Integrated on Silicon Using Thermoreflectance and Electrical Transient Measurements“. Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2019, DPC (01.01.2019): 001293–310. http://dx.doi.org/10.4071/2380-4491-2019-dpc-presentation_tha3_009.
Der volle Inhalt der QuelleKlyuev, Alexey V., Arkady V. Yakimov und Irene S. Zhukova. „1/f Noise in Ti–Au/n-Type GaAs Schottky Barrier Diodes“. Fluctuation and Noise Letters 14, Nr. 03 (29.06.2015): 1550029. http://dx.doi.org/10.1142/s0219477515500297.
Der volle Inhalt der QuellePowell, J. R., Colin Viegas, Hoshiar Singh Sanghera, P. G. Huggard und Byron Alderman. „Comparing Novel MMIC and Hybrid Circuit High Efficiency GaAs Schottky Diode mm-Wave Frequency Doublers“. Electronics 9, Nr. 10 (19.10.2020): 1718. http://dx.doi.org/10.3390/electronics9101718.
Der volle Inhalt der QuelleLiu, Yang, Bo Zhang, Yinian Feng, Xiaolin Lv, Dongfeng Ji, Zhongqian Niu, Yilin Yang, Xiangyang Zhao und Yong Fan. „Development of 340-GHz Transceiver Front End Based on GaAs Monolithic Integration Technology for THz Active Imaging Array“. Applied Sciences 10, Nr. 21 (09.11.2020): 7924. http://dx.doi.org/10.3390/app10217924.
Der volle Inhalt der QuelleKAHVECI, OSMAN, ABDULLAH AKKAYA, ENISE AYYILDIZ und ABDÜLMECIT TÜRÜT. „COMPARISON OF THE Ti/n-GaAs SCHOTTKY CONTACTS’ PARAMETERS FABRICATED USING DC MAGNETRON SPUTTERING AND THERMAL EVAPORATION“. Surface Review and Letters 24, Nr. 04 (10.08.2016): 1750047. http://dx.doi.org/10.1142/s0218625x17500470.
Der volle Inhalt der QuelleYILDIRIM, N., H. DOGAN, H. KORKUT und A. TURUT. „DEPENDENCE OF CHARACTERISTIC DIODE PARAMETERS IN Ni/n-GaAs CONTACTS ON THERMAL ANNEALING AND SAMPLE TEMPERATURE“. International Journal of Modern Physics B 23, Nr. 27 (30.10.2009): 5237–49. http://dx.doi.org/10.1142/s0217979209053564.
Der volle Inhalt der QuelleGromov, Dmitry, und Vadim Elesin. „Long-term radiation effects in GaAs microwave devices exposed to pulsed ionizing radiation“. ITM Web of Conferences 30 (2019): 10005. http://dx.doi.org/10.1051/itmconf/20193010005.
Der volle Inhalt der QuelleCROWE, THOMAS W., ROBERT J. MATTAUCH, ROBERT M. WEIKLE und UDAYAN V. BHAPKAR. „TERAHERTZ GaAs DEVICES AND CIRCUITS FOR HETERODYNE RECEIVER APPLICATIONS“. International Journal of High Speed Electronics and Systems 06, Nr. 01 (März 1995): 125–61. http://dx.doi.org/10.1142/s0129156495000043.
Der volle Inhalt der QuelleDissertationen zum Thema "GaAs Schottky diodes"
Chegroune, Kamel. „Realisation et caracterisation de diodes schottky submillimetriques metal-gaas“. Toulouse 3, 1986. http://www.theses.fr/1986TOU30166.
Der volle Inhalt der QuelleDaboo, Cyrus. „Surface plasmon enhanced quantum efficiency of GaAs-Au Schottky diodes“. Thesis, University of Cambridge, 1991. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.386416.
Der volle Inhalt der QuelleElguennouni, Driss. „Réalisation d'un ensemble automatisé de mesures d'admittance : application à l'étude des diodes Schottky Al/GaAs et YSi1,7/Si“. Grenoble 1, 1989. http://www.theses.fr/1989GRE10092.
Der volle Inhalt der QuelleCarton, Patrick. „Caractérisation de GaAs massif et contraste EBIC des dislocations“. Lille 1, 1990. http://www.theses.fr/1990LIL10052.
Der volle Inhalt der QuelleBouillaud, Hugo. „Fabrication et optimisation des caractéristiques thermiques de diodes Schottky de la filière GaAs et reportées sur SiHR pour des applications de multiplication de fréquences“. Electronic Thesis or Diss., Université de Lille (2022-....), 2023. http://www.theses.fr/2023ULILN043.
Der volle Inhalt der QuelleThe exponential needs associated with applications exploiting the THz domain require to expand the range of available sources and optimize their fabrication processes. In this thesis, we focused on schottky diodes for its use as frequency multipliers. Our experimental research involved optimizing the characteristics of GaAs schottky diodes through the development and implementation of an innovative fabrication process. First, we fabricated GaAs schottky diodes on GaAs substrate with several aspect ratios in order to make a reference in terms of device. Then we fabricated a flip-chip device for a 150 GHz frequency multiplication application in a waveguide block. Finally, in order to enhance the power handling of the diodes, we optimized their thermal dissipation by transferring their epitaxial structure onto a substrate with higher thermal conductivity : SiHR (high resistivity silicon). The complete technological processes for these fabrications are detailed, and the last part of the study is dedicated to their characterization. On one hand, we assessed any variations in the characteristics of GaAs diodes on GaAs induced by the different aspect ratios. On the other hand, we compared the two technologies on SiHR and GaAs substrates. This work demonstrates the potential of this type of transferred technology, where a significant reduction of thermal resistance is observed and is associated with a notable improvement of the series resistance
Haris, Norshakila. „Three-dimensional multilayer integration and characterisation of CPW MMIC components for future wireless communications“. Thesis, University of Manchester, 2017. https://www.research.manchester.ac.uk/portal/en/theses/threedimensional-multilayer-integration-and-characterisation-of-cpw-mmic-components-for-future-wireless-communications(89ddea33-4de2-43ba-b8dc-dbc032b868e7).html.
Der volle Inhalt der QuelleVildeuil, Jean-Charles. „Caractérisation et modélisation basse fréquence de transistors PHEMT AlGaAs/InGaAS/GaAs : bruits du canal, de la grille et corrélation“. Montpellier 2, 2000. http://www.theses.fr/2000MON20151.
Der volle Inhalt der QuelleJung, Cécile. „Conception et fabrication de circuits intégrés basés sur les nano-diodes Schottky GaAs fonctionnant aux fréquences THz et sub-THz pour les récepteurs hétérodynes spatiaux dédiés à l'astrophysique“. Paris 11, 2009. http://www.theses.fr/2009PA112240.
Der volle Inhalt der QuelleThe objective of this thesis is to design and integrate circuits mixers at 330GHz and 183GHz for heterodyne detection in astrophysics. These circuits are based on Schottky diodes, allowing operation at room temperature. The main point of the thesis is to develop a protocol for fabrication of submicron Schottky diodes and to integrate them in circuits mixers. These circuits are integrated in a test block and characterized in terms of RF performances. This thesis work may be used for circuits at higher frequencies, for both mixers and multipliers. A fabrication process entirely based on electron beam lithography has been developed, allowing the realization of Schottky diodes with submicronic anodes and improvement of their electrical characteristics. Many studies for specific optimization of the ohmic and schottky contacts have yielded to series resistances below 10Ω and to best ideality factors between 1,08 and 1,15. Two types of circuits have been made. One for operation at 330GHz composed of a pair of anti-parallel anodes on a 10μm membrane. The other, for a frequency of 183GHz, consists of a MMIC circuit including a pair of anti-parallel anodes on a 50μm membrane. One of the components to 330GHz has been integrated into a mixer bloc, its RF performances have been characterized. The preliminary result was encouraging with a noise temperature of 1800K for a conversion loss of 8dB
Debrie, Francis. „Élaboration d'une technologie auto-alignée par gravure plasma de métaux réfractaires pour transistors à effet de champ à hétérojonction (AlGaAs/GaAs)“. Toulouse, INPT, 1986. http://www.theses.fr/1986INPT046H.
Der volle Inhalt der QuelleGottwald, Frank-Hermann. „Rauschen von mm-Wellenmischern mit GaAs-Schottky-Dioden“. [S.l. : s.n.], 1998. http://deposit.ddb.de/cgi-bin/dokserv?idn=955903629.
Der volle Inhalt der QuelleBücher zum Thema "GaAs Schottky diodes"
Yu, Chen Liang, und United States. National Aeronautics and Space Administration., Hrsg. SiC-based gas sensors. [Washington, D.C: National Aeronautics and Space Administration, 1997.
Den vollen Inhalt der Quelle findenYu, Chen Liang, und United States. National Aeronautics and Space Administration., Hrsg. Electronic and interfacial properties of Pd/6H-SiC Schottky diode gas sensors. [Washington, DC]: National Aeronautics and Space Administration, 1996.
Den vollen Inhalt der Quelle findenUnited States. National Aeronautics and Space Administration., Hrsg. Final technical report on the development of a solid-state hydrogen sensor for rocket engine leakage detection. [Washington, DC: National Aeronautics and Space Administration, 1994.
Den vollen Inhalt der Quelle findenBuchteile zum Thema "GaAs Schottky diodes"
Fischler, W., G. Zandler und R. A. Höpfel. „Coherent THz Plasmons in GaAs Schottky Diodes“. In Springer Series in Chemical Physics, 389–90. Berlin, Heidelberg: Springer Berlin Heidelberg, 1996. http://dx.doi.org/10.1007/978-3-642-80314-7_170.
Der volle Inhalt der QuelleHackbarth, TH, H. Muessig, G. Jonsson und H. Brugger. „MBE-Regrowth for Monolithic Integration of GaAs-Based Field-Effect Transistors and Schottky Diodes“. In Low Dimensional Structures Prepared by Epitaxial Growth or Regrowth on Patterned Substrates, 345–55. Dordrecht: Springer Netherlands, 1995. http://dx.doi.org/10.1007/978-94-011-0341-1_32.
Der volle Inhalt der QuelleDayal, S., S. Mahajan, D. S. Rawal und B. K Sehgal. „Development of GaAs Hyperabrupt Schottky Varactor Diode using Ion-Implanted Active Layer on SI GaAs“. In Physics of Semiconductor Devices, 137–39. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-03002-9_35.
Der volle Inhalt der QuelleDyadyuk, Val, John W. Archer und Leigh Stokes. „W-Band GaAs Schottky Diode MMIC Mixers for Multi-Gigabit Wireless Communications“. In Advances in Broadband Communication and Networks, 73–101. New York: River Publishers, 2022. http://dx.doi.org/10.1201/9781003337089-4.
Der volle Inhalt der QuelleChou, Yen I., Huey Ing Chen und Chien Kang Hsiung. „Electroless Plated Pd/GaAs Schottky Diode and its Application to Hydrogen Detection“. In Solid State Phenomena, 81–84. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/3-908451-31-0.81.
Der volle Inhalt der Quelle„On the electrical characteristics of high energy carbon irradiated Au/n-GaAs Schottky Barrier Diodes“. In Compound Semiconductors 2001, 107–12. CRC Press, 2002. http://dx.doi.org/10.1201/9781482268980-21.
Der volle Inhalt der QuelleHasegawa, Hideki, Ken-ichi Koyanagi und Seiya Kasai. „Barrier Height Control and Current Transport in GaAs and InP Schottky Diodes Having An Ultrathin Silicon Interface Control Layer“. In Control of Semiconductor Interfaces, 187–92. Elsevier, 1994. http://dx.doi.org/10.1016/b978-0-444-81889-8.50036-5.
Der volle Inhalt der QuelleKavanag, Karen L., A. Alec Talin, Brent A. Morgan, R. Stanley Williams und Ken Ring. „Comparison of the spatial variation in the barrier height of Si and GaAs Schottky diodes as measured by ballistic electron emission microscopy“. In Control of Semiconductor Interfaces, 261–66. Elsevier, 1994. http://dx.doi.org/10.1016/b978-0-444-81889-8.50048-1.
Der volle Inhalt der QuelleKonferenzberichte zum Thema "GaAs Schottky diodes"
Maki, P. A., und D. J. Ehrlich. „In Situ Excimer Laser Irradiation of GaAs Surfaces During Schottky Barrier Formation*“. In Microphysics of Surfaces, Beams, and Adsorbates. Washington, D.C.: Optica Publishing Group, 1987. http://dx.doi.org/10.1364/msba.1987.ma3.
Der volle Inhalt der QuellePham, Q. P. „High reliability sputtered Schottky diodes on GaAs“. In 15th International Conference on Infrared and Millimeter Waves. SPIE, 1990. http://dx.doi.org/10.1117/12.2301469.
Der volle Inhalt der QuelleChristianson, K. A. „Aging Effects in GaAs Schottky Barrier Diodes“. In 27th International Reliability Physics Symposium. IEEE, 1989. http://dx.doi.org/10.1109/irps.1989.363363.
Der volle Inhalt der QuelleErsland, Peter, und Shivarajiv Somisetty. „ESD Protection Capabilities of GaAs Schottky Diodes“. In 2007 ROCS Workshop. IEEE, 2007. http://dx.doi.org/10.1109/rocs.2007.4391068.
Der volle Inhalt der QuelleFischler, W., R. A. Höpfel und G. Zandler. „Coherent THz plasmons in GaAs Schottky diodes“. In International Conference on Ultrafast Phenomena. Washington, D.C.: Optica Publishing Group, 1996. http://dx.doi.org/10.1364/up.1996.wc.2.
Der volle Inhalt der QuelleWu, Yao, Xin Yan, Bang Li, Yanbin Luo, Qichao Lu, Xia Zhang und Xiaomin Ren. „GaAs-Nanowire-Array/Graphene Schottky Diodes for Photodetection“. In Asia Communications and Photonics Conference. Washington, D.C.: OSA, 2017. http://dx.doi.org/10.1364/acpc.2017.su4k.1.
Der volle Inhalt der QuelleCrowe, T. W. „GaAs Schottky diodes for mixing applications beyond 1THz“. In 16th International Conference on Infrared and Millimeter Waves. SPIE, 1991. http://dx.doi.org/10.1117/12.2297948.
Der volle Inhalt der QuelleLaperashvili, Tina, Orest Kvitsiani, Ilia Imerlishvili und David Laperashvili. „Terahertz pulse detection by the GaAs Schottky diodes“. In SPIE Photonics Europe, herausgegeben von Benjamin J. Eggleton, Alexander L. Gaeta und Neil G. R. Broderick. SPIE, 2010. http://dx.doi.org/10.1117/12.854048.
Der volle Inhalt der QuelleTang, A. Y., V. Drakinskiy, P. Sobis, J. Vukusic und J. Stake. „Modeling of GaAs Schottky diodes for terahertz application“. In 2009 34th International Conference on Infrared, Millimeter, and Terahertz Waves (IORMMW-THz 2009). IEEE, 2009. http://dx.doi.org/10.1109/icimw.2009.5325563.
Der volle Inhalt der QuelleOksanich, A. P., S. E. Pritchin, M. G. Kogdas, A. G. Kholod und M. G. Dernova. „Pd/Porous GaAs in the Manufacture of Schottky Diodes“. In 2019 IEEE International Conference on Modern Electrical and Energy Systems (MEES). IEEE, 2019. http://dx.doi.org/10.1109/mees.2019.8896603.
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