Thematische Bibliographien / Film deposited on substrate

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  1. Zeitschriftenartikel
  2. Dissertationen
  3. Bücher
  4. Buchteile
  5. Konferenzberichte
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Auswahl der wissenschaftlichen Literatur zum Thema „Film deposited on substrate“

Autor: Grafiati
Veröffentlicht am 8. Februar 2025

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Zeitschriftenartikel zum Thema "Film deposited on substrate"

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Panitchakan, H., und Pichet Limsuwan. „The Properties of Al2O3 Films Deposited onto Al2O3-TiC and Si Substrates by RF Diode Sputtering“. Applied Mechanics and Materials 313-314 (März 2013): 126–30. http://dx.doi.org/10.4028/www.scientific.net/amm.313-314.126.

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The Al2O3 films were deposited onto Al2O3-TiC and Si (100) substrates by RF sputtering technique by varying powers sputter target, substrate bias voltages and fixed process pressure 25 mTorr which aim to achieve high deposition rate and investigated film properties onto different types. Result showed significant power sputter target to deposition rate both substrates and film properties depend on type of substrate. The power sputter target at 8kW and substrate bias voltage at -150 V is optimum deposition condition to provide deposition rate is 53.97nm/min for Al2O3-TiC substrate and 51.50nm/min for Si substrate. The Al2O3 film deposited onto Al2O3-TiC substrate surface morphology displayed rather roughness than Al2O3 film deposited onto Si substrate which verified from SEM and AFM as 0.99 nm (Ra) versus 0.46 nm (Ra). The film stress, hardness, reduces modulus and breakdown voltage (BDV) of Al2O3 film deposited were higher than Al2O3 film deposited on Al2O3-TiC substrates which were correspond to surface morphology.
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Hwang, Cheol Seong, Mark D. Vaudin und Gregory T. Stauf. „Influence of substrate annealing on the epitaxial growth of BaTiO3 thin films by metal-organic chemical vapor deposition“. Journal of Materials Research 12, Nr. 6 (Juni 1997): 1625–33. http://dx.doi.org/10.1557/jmr.1997.0222.

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BaTiO3 thin films were deposited by metal-organic chemical vapor deposition at 840 °C on two differently treated (100) MgO single crystal substrates. One MgO substrate was only mechanically polished and the other substrate was polished and then annealed at 1100 °C for 4 h in oxygen. Observation by transmission electron microscopy showed that the BaTiO3 thin film deposited on the unannealed substrate was fine-grained and that the whole film was epitaxial (100) in nature. In contrast, the film deposited on the annealed substrate consisted of large, (100)-oriented, epitaxial grains within which were distributed (110)-oriented grains with random in-plane orientations. These differences in BaTiO3 films deposited on differently treated substrates are discussed with reference to the surface structure of the MgO substrate and nucleation kinetics of BaTiO3 thin films on MgO.
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Prasad, Beesabathina D., L. Salamanca-Riba, S. N. Mao, X. X. Xi, T. Venkatesan und X. D. Wu. „Effect of substrate materials on laser deposited Nd1.85Ce0.15CuO4−y films“. Journal of Materials Research 9, Nr. 6 (Juni 1994): 1376–83. http://dx.doi.org/10.1557/jmr.1994.1376.

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The growth morphology and interface structure of Nd1.85Ce0.15CuO4−y (NCCO) films grown by pulsed laser deposition on two different types of substrates, “perovskite” LaAlO3 (LAO) and SrTiO3 (STO) and “fluorite” Y2O3-stabilized ZrO2 (YSZ), were studied using cross-sectional electron microscopy. Structurally, the NCCO films are different when grown on the two types of substrates in three aspects: (i) epitaxy, (ii) substrate-film intermixing, and (iii) substrate-film interface roughness. In general, films deposited on “fluorite” substrates showed better superconducting properties than the films grown on “perovskite” substrates, especially for thinner films. Lattice mismatch considerations are not sufficient to explain the observed differences since films grown on the YSZ substrate showed sharp substrate-film interface in spite of their large lattice misfit. The atomic arrangements at the interface were analyzed in terms of electrostatic energy (charge balance) and matching of the oxygen sublattices in order to account for the experimental results.
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Xu, Zhihua, und Zhengtao Chen. „The Effect of Titanium Oxide Substrate on the Film Morphology and Photoluminescence Properties of Organometal Halide Perovskites“. MRS Proceedings 1771 (2015): 181–85. http://dx.doi.org/10.1557/opl.2015.608.

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ABSTRACTWe have investigated the film morphology and photoluminescence properties of spin-coated CH3NH3PbI3-xClx films on mesoporous and compact TiO2 substrates. We observe that the perovskite film deposited on the mesoporous substrate composed of 20 nm TiO2 nanopaticles exhibits relatively uniform grain size, while the films deposited on the compact TiO2 substrate and the mesoporous substrate with large TiO2 nanoparticles (200 nm) show highly heterogeneous film morphology. The heterogeneity of film morphology has significant effect on the photoluminescence spectra and lifetime of the perovskite films. The result of time-resolved confocal microscopy unveils the relation between film structure and photoluminescence properties.
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Xu, Fang Chao, und Kazuhiro Kusukawa. „Adhesion Strength of BNT Films Hydrothermally Deposited on Titanium Substrates“. Advanced Materials Research 123-125 (August 2010): 399–402. http://dx.doi.org/10.4028/www.scientific.net/amr.123-125.399.

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Lead-free piezoelectric (Bi1/2Na1/2)TiO3 (BNT) films were deposited on 1 mm thick pure titanium(Ti) substrates by a hydrothermal method. Tensile tests were performed to quantitatively assess the adhesion strength between BNT films and Ti substrates. Ti substrates were pretreated by chemical polish and mechanical polish respectively prior to BNT film deposition. In the tensile test, the behavior of BNT film exfoliation was investigated by the replica method. The critical Ti substrate strain inducing BNT film exfoliation was determined by the aid of finite element analysis (FEM). In this study, the results revealed that BNT film exfoliations were caused by the strain of Ti substrate, and the mechanical polish pretreatment improved the adhesion of BNT film to Ti substrate.
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Sacken, U. von, und D. E. Brodie. „Structure of vacuum-deposited Zn3P2 films“. Canadian Journal of Physics 64, Nr. 10 (01.10.1986): 1369–73. http://dx.doi.org/10.1139/p86-243.

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The structure of polycrystalline Zn3P2 films has been studied for 1- to 2-μm-thick vacuum-deposited films on glass substrates. Transmission electron microscopy and X-ray diffraction techniques have been used to obtain a detailed, quantitative analysis of the film structure. The initial growth consists of small (≤ 10 nm), randomly oriented grains. As the film thickness increases, the growth of crystallites with the {220} planes oriented approximately parallel to the substrate is favoured, and a columnar structure develops along with a highly preferred orientation. This structure has been observed directly by transmission electron microscopy of thin cross sections of the films. The size of the grains at the free surface increases with the film thickness, reaching approximately 200–300 nm when the film is 1 μm thick. The effects of substrate temperature and low-energy (0.5–2 keV) electron bombardment of the film during growth have also been studied. Neither substrate temperature nor electron bombardment appear to have a major effect on the film structure. The primary effect of electron bombardment appears to be the creation of preferred nucleation sites on the substrate.
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Hasan, M. K., M. N. A. Shafi, M. N. A. Siddiquy, M. A. Rahim und M. J. Islam. „Electrical, Magnetic and Morphological Properties of E-Beam Evaporated Ni Thin Films“. Journal of Scientific Research 8, Nr. 1 (01.01.2016): 21–28. http://dx.doi.org/10.3329/jsr.v8i1.24492.

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Nickel (Ni) thin films in the thickness range 50?80 nm have been prepared by electron beam evaporation method at a base pressure of 4x10-5 mbar on silicon and glass substrates. Some samples have been annealed at 573 K for 1.5 h in open air. The resistivity of Ni films on silicon substrate is higher than the resistivity of Ni films on glass substrate. The TCR of Ni films is found to be positive which indicates that the Ni samples are metallic in nature. Coercivity of Ni films increases with increasing film thickness. The coercivity of 80 nm as-deposited Ni film on glass substrate is found to be ~ 9 Oe. The rms value of the surface roughness of 150 nm as-deposited Ni film on glass substrate is ~12 nm and it becomes ~ 7 nm after annealing. On the other hand, the coercivity of 90 nm and 160 nm as-deposited Ni films on silicon substrate are 50 Oe and 85 Oe, respectively. The rms value of surface roughness of 120 nm as-deposited Ni film on Si substrate is ~ 16 nm. It becomes ~ 3 nm after annealing.
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Yu, J., und S. Matsumoto. „Growth of cubic boron nitride films on tungsten carbide substrates by direct current jet plasma chemical vapor deposition“. Journal of Materials Research 19, Nr. 5 (Mai 2004): 1408–12. http://dx.doi.org/10.1557/jmr.2004.0188.

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Cubic boron nitride (cBN) film was deposited on Co-containing WC substrates by dc jet plasma chemical vapor deposition from an Ar–N2–BF3–H2 gas system. The formation of cobalt nitrides was observed at interface, and the hindrance of Co on cBN growth was demonstrated. Growth temperature and etching treatment of the substrate before deposition influenced the cBN growth greatly. At 1050 °C, cBN films were obtained on etched substrates but not on unetched substrates. At 1090 °C, cBN films were not obtained even on etched substrates. At 960 °C, cBN films deposited even on unetched substrate but the films always peeled off after exposing to air. The film quality of cBN deposited at 960 °C is better than that deposited at 1050 °C.
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Sawa, Sayuki, und Shinzo Yoshikado. „Evaluation of Planar-Type Thin Film ZnO Varistors Fabricated Using Pulsed Laser Ablation“. Key Engineering Materials 320 (September 2006): 109–12. http://dx.doi.org/10.4028/www.scientific.net/kem.320.109.

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Planar-type thin film Bi-Mn-Co-doped ZnO varistors were fabricated on a silica glass substrate or a sintered alumina substrate using a visible light (532 nm) pulsed laser ablation method. The deposited thin films were annealed at 800°C or 900°C in air. For the thin films deposited on alumina substrates and then annealed, the contents of Bi and Mn decreased compared with those of the as-deposited films. Voltage-current (V-I) characteristics of the thin-film varistor fabricated on the alumina substrates and annealed showed nonlinearity. The nonlinearity index α was approximately 10 for the thin film deposited on the alumina substrate and annealed at 800°C in air using a target of ZnO doped with 2.5 mol% Bi2O3, 0.5 mol% MnO2 and 0.2 mol% Co3O4. Moreover, the current density of 20 A/cm3 was relatively high for safety use.
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Wang, Xin Chang, Bin Shen und Fang Hong Sun. „Deposition and Characterization of Boron-Doped HFCVD Diamond Films on Ti, SiC, Si and Ta Substrates“. Applied Mechanics and Materials 217-219 (November 2012): 1062–67. http://dx.doi.org/10.4028/www.scientific.net/amm.217-219.1062.

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In the present investigation, titanium (Ti), silicon carbide (SiC), silicon (Si) and tantalum (Ta) samples with the same geometry are selected as substrates to deposite HFCVD boron-doped diamond films with the same deposition parameters, using trimethyl borate as the dopant. FESEM, EDS, Raman spectroscopy and Rockwell hardness tester are used to characterize as-deposited boron-doped diamond (BDD) films. The FESEM micrographs exhibit that the film deposited on Si substrate presents the best uniformity and that on Ti substrate has smallest grain size and film thickness, with titanium element detected in the EDS spectra. Moreover, it’s speculated by indentation test that the adhesive strength between the BDD films and different substrates can be order as SiC>Ta>Ti for the different thermal expansion coefficient gaps between the substrate and diamond, and the hardness of the BDD coated samples measured using Rockwell hardness tester can also be order as SiC>Ta>Ti due to the different hardness of substrate materials. Finally, similar and representative characterization for BDD films is obtained from the Raman spectra for all the BDD films on different substrates.
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Dissertationen zum Thema "Film deposited on substrate"

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Porada, O. K., A. O. Kozak, V. I. Ivashchenko, S. M. Dub, Олександр Дмитрович Погребняк, Александр Дмитриевич Погребняк und Oleksandr Dmytrovych Pohrebniak. „Hard Si-C-N Chemical Vapor Deposited Films“. Thesis, Sumy State University, 2015. http://essuir.sumdu.edu.ua/handle/123456789/42711.

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Si-C-N thin films were deposited on silicon substrates by plasma-enhanced chemical vapor deposition (PECVD) using hexamethyldisilazane as the main precursor. An influence of substrate temperature (TS) on film properties was analyzed. It was established that the deposited films were x-ray amorphous. The growth of the films slows down with increasing substrate temperature. The distribution of Si–C, Si–N and C–N bonds were almost independent of TS, whereas the number of С–Н, Si–H and N–H bonds essentially decreased when substrate temperature increased. The nanohardness and elastic modulus increased with TS due to a reduction of the weak hydrogen bonds.
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Bragg, Donald. „Photocatalytic Oxidation of Carbon Monoxide Using Sputter Deposited Molybdenum Oxide Thin Films on a Silicon Dioxide Substrate“. Fogler Library, University of Maine, 2007. http://www.library.umaine.edu/theses/pdf/BraggD2007.pdf.

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Manoochehrnia, Pooyan. „Characterisatiοn οf viscοelastic films οn substrate by acοustic micrοscοpy. Direct and inverse prοblems“. Electronic Thesis or Diss., Normandie, 2024. http://www.theses.fr/2024NORMLH38.

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Dans le cadre de cette thèse de doctorat, la caractérisation des films épais et minces déposés sur un substrat a été réalisée à l'aide de la microscopie acoustique via des algorithmes de résolution de problèmes directs et inverses. La méthode de Strohm est utilisée pour la résolution directe des problèmes, tandis qu'une variété de modèles mathématiques comprenant le modèle de la série de Debye (DSM), le modèle de la ligne de transmission (TLM) et la méthode spectrale utilisant le modèle de la rapport entre les réflexions multiples (MRM) ont été utilisés pour résoudre les problèmes inverses. Une application spécifique de la microscopie acoustique a été utilisée, consistant à monter des transducteurs à ondes planes à haute fréquence (50 MHz et 200 MHz) au lieu d'utiliser les transducteurs à focalisation traditionnels utilisés pour l'imagerie acoustique, ainsi qu'à utiliser le A-Scan à ondes complètes, qui pourrait être étendu à l'analyse en vrac des A-Scan consécutifs. Les modèles ont été validés expérimentalement par un film épais en époxy-résine d'une épaisseur d'environ 100μm et un film mince en vernis d'environ 8μm. Les paramètres caractérisés comprennent des paramètres mécaniques (par exemple la densité et l'épaisseur) ainsi que des paramètres viscoélastiques (par exemple la vitesse longitudinale acoustique et l'atténuation acoustique) et parfois le déphasage du transducteur
In the framework of this PhD thesis, the characterisation of the thick and thin films deposited on asubstrate has been done using acoustic microscopy via direct and inverse problem-solving algorithms.Namely the Strohm’s method is used for direct problem-solving while a variety of mathematical modelsincluding Debye series model (DSM), transmission line model (TLM) and spectral method using ratiobetween multiple reflections model (MRM) have been used to solve inverse-problem. A specificapplication of acoustic microscopy has been used consisting of mounting the plane-wave high frequency(50 MHz and 200MHz) transducers instead of use of the traditional focus transducers used for acousticimaging as well as using full-wave A-scan which could be well extended to bulk analysis of consecutivescans. Models have been validated experimentally by a thick film made of epoxy-resin with thicknessof about 100μm and a thin film made of polish of about 8μm. The characterised parameters includemechanical parameters (e.g. density and thickness) as well as viscoelastic parameters (e.g. acousticlongitudinal velocity and acoustic attenuation) and occasionally transducer phase-shift
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Schlebrowski, Torben [Verfasser], Christian B. [Akademischer Betreuer] Fischer, Stefan [Akademischer Betreuer] Wehner, Christian B. [Gutachter] Fischer und Barbara [Gutachter] Hahn. „Plasma deposited thin layers of amorphous hydrogenated carbon (a-C:H) on selected biodegradable polymer films - Layer thickness and substrate dependent carbon hybridisation and its effect on layer stability / Torben Schlebrowski ; Gutachter: Christian B. Fischer, Barbara Hahn ; Christian B. Fischer, Stefan Wehner“. Koblenz, 2020. http://d-nb.info/1213726859/34.

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Butterfield, Martin Thomas. „Surface structure of ultrathin metal films deposited on copper single crystals“. Thesis, Loughborough University, 2000. https://dspace.lboro.ac.uk/2134/33132.

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Ultrathin films of Cobalt, Iron and Manganese have been thennally evaporated onto an fcc Copper (111) single crystal substrate and investigated using a variety of surface structural teclmiques. The small lattice mismatch between these metals and the Cu (111) substrate make them an ideal candidate for the study of the phenomena of pseudomorphic film growth. This is important for the understanding of the close relationship between film structure and magnetic properties. Growing films with the structure of their substrate rather than their bulk phase may provide an opportunity to grow materials with novel physical and magnetic properties, and hence new technological applications. Both Cobalt and Iron have been found to initially maintain a registry with the fee Cu (111) surface in a manner consistent with pseudomorphic growth. This growth is complicated by island rather than layer-by-layer growth in the initials stages of the film. In both cases a change in the structure of the film seems to occur at a point where the coalescence of islands in the film may be expected to occur. When the film does change structure they do not form a perfect over-layer with the structure of their bulk counterpart. The films do contain a number of features representative of the bulk phase but also contain considerable disorder and possibly remnants of fcc (111) structure. The order present in these films can be greatly improved by annealing. Manganese appears to grow with an fee Mn (111) lattice spacing and there is no sign of a change in structure in films of up to 4.61 ML thick. The gradual deposition and annealing of a film to 300°C, with a total deposition time the same as that for a 1 ML thick film, causes a surface reconstruction to occur that is apparent in a R30° (√3×√3) LEED pattern. This is attributed to the formation of a surface alloy, which is also supported by the local expansion of the Cu lattice in the (111) direction.
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Munns, Clifford B. „X-ray diffraction studies of evaporated gold thin films deposited on aluminum nitride substrates“. Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 1994. http://handle.dtic.mil/100.2/ADA280454.

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Taddeo, Fernando. „Caracterização de filme vítreo, sinterizado com diferentes ciclos térmicos, depositado sobre substrato de Y-TZP e sua resistência de união imediata e após termociclagem a cimentos resinosos“. Universidade de São Paulo, 2013. http://www.teses.usp.br/teses/disponiveis/23/23140/tde-16122013-193112/.

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A zircônia estabilizada por ítria (Y-TZP) apresenta excelentes propriedades mecânicas; entretanto, sua microestrutura cristalina inerte faz com que tratamentos aplicados em porcelanas e vitrocerâmicas, como condicionamento com ácido fluorídrico e aplicação de compostos silânicos, sejam ineficazes para obter união aos cimentos resinosos. Neste trabalho, propõe-se uma alternativa para aumentar a reatividade da Y-TZP a cimentos resinosos por meio de um processo de modificação da superfície através da deposição de um filme vítreo. O objetivo deste estudo é, portanto, caracterizar um filme vítreo, sinterizado com diferentes ciclos térmicos, após deposição sobre Y-TZP (YZ 20/19, VITA Blocks Zahnfabrik, Bad Saackingen, Germany) e avaliar a resistência de união imediata e após ciclagem térmica (10.000 ciclos 5 e 55°C) a dois cimentos resinosos (Relyx Arc, 3M/ESPE, St. Paul, MN, USA e Rely-X U200 3M/ESPE, Neuss, Germany). A caracterização do filme foi efetuada por meio de microscopia eletrônica de varredura, para avaliar a morfologia; EDS (Espectroscopia por dispersão de energia), para estabelecer uma análise qualitativa e semi-quantitativa dos elementos químicos presentes e mensuração do ângulo de contato. Foram propostas as seguintes condições experimentais na superfície da YTZP: deposição dos filmes sinterizados à 700°C, 900°C ou ciclo de sinterização para o auto glaze; aplicação do primer contendo MDP (Alloy Primer, Kuraray Medical Inc, Kurashiki, Okayama, Japan); e silicatização da superfície (sistema Rocatec Soft, 3M/ESPE, St. Paul, MN, USA). Após o ensaio mecânico, o padrão de fratura foi avaliado por meio de microscopia óptica. Para os dados obtidos, o traço de Pillai (p = 0,00) mostrou que o tipo de tratamento empregado tem um efeito significativo sobre a resistência de união. Para determinar a diferença entre os grupos estudados foi aplicado um teste de comparações múltiplas (Tukey). O filme 900 apresentou maior resistência de união imediata (42,2 MPa), sendo este valor estatisticamente superior a silicatização (35,5 MPa) e MDP (28,0 MPa). Os resultados obtidos após termociclagem, mostram que o filme 900 novamente apresentou maior resistência de união (36,8 MPa) e também foi estatisticamente superior ao MDP (16,1 MPa) e silicatização (27,3MPa). A análise em microscópio estereoscópico demonstrou um padrão de fratura predominantemente coesiva na resina para microtração imediata para os grupos com deposição do filme vítreo e silicatizados. Para o MDP, o padrão de fratura foi, na sua maioria, do tipo mista. O ângulo de contato medido imediatamente após os tratamentos de superfície apresentou-se menor para os grupos com filme e silicatização e manteve-se com baixos valores somente para os grupos com filme após limpeza com álcool absoluto. A análise por EDS das superfícies dos filmes indicou a presença de silício nos diversos pontos analisados. Concluiu-se, deste modo, que a deposição do filme vítreo mostrou-se como um meio eficiente para promover uma forte e durável união com da Y-TZP com os cimentos resinosos, independente da temperatura de sinterização utilizada.
The yttria stabilized zirconia (Y- TZP) has excellent mechanical properties, however its inert crystalline microstructure makes treatments applied in porcelain and glass ceramics, such as hydrofluoric acid etching and application of silane compounds, are ineffective for the union resin cements. In this work, we propose an alternative to increase the reactivity of the Y- TZP resin cement by a process of surface modification by depositing a glass film. The aim of this study is therefore to characterize a glass film, sintered with different thermal cycles, after deposition on Y- TZP (YZ - 20/19, VITA Blocks Zahnfabrik, Bad Saackingen, Germany) and to evaluate the bond strength immediately after thermocycling (10.000 cycles 5 and 55°C) to two resin cements (Relyx Arc, 3M/ESPE, St. Paul, MN, USA and Rely - X U200 3M/ESPE, Neuss, Germany). The characterization of the glass film was performed by means of scanning electron microscopy to assess the morphology, EDS (Energy Dispersive Spectroscopy), to establish a qualitative and semi-quantitative chemical elements and measuring the contact angle. Been proposed the following experimental conditions on the surface of YTZP: deposition of films sintering at 700°C, 900°C or sintering cycle for VM9 self glaze; primer containing MDP (Alloy Primer, Kuraray Medical Inc., Okayama, Okayama, Japan) and silica coating surface (Rocatec Soft, 3M/ESPE, St. Paul, MN, USA) . After mechanical testing, the fracture pattern was evaluated by light microscopy. For data, the trace of Pillai (p = 0.00) showed that the type of treatment used has a significant effect on the bond strength. To determine the difference between groups was applied multiple comparison test (Tukey). The 900 film showed higher bond strength immediately (42.2 MPa), and this value was statistically superior to silica coat (35.5 MPa) and MDP (28.0 MPa). The results obtained after thermocycling, show that 900 film again showed highest bond strength (36.8 MPa) and was also statistically superior to MDP (16.1 MPa) and silica coating (27.3 MPa). The analysis in stereoscopic microscopes showed a pattern of predominantly cohesive fracture in the resin for immediate microtensile for groups with film deposition and silica coat. In the MDP, the fracture pattern was mostly of the mixed type. The contact angle measured immediately after the surface treatments was lower for groups with film and silica coat and remained with low values only for groups with film after cleaning with absolute alcohol. Analysis by EDS surfaces of the films indicated the presence of silicon at the various points analyzed. It was concluded therefore that the glass film deposition proved to be an efficient way to promote a strong and durable bond with Y- TZP with resin cements, regardless of sintering temperature used.
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Stefanik, Todd Stanley 1973. „The effect of oxygen partial pressure on the epitaxy of cerium oxide films deposited on nickel substrates“. Thesis, Massachusetts Institute of Technology, 1996. http://hdl.handle.net/1721.1/47650.

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Gan, Feng Yuan 1967. „Thin film transistors with chemically deposited active channels“. Thesis, McGill University, 2001. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=38192.

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Using CdSe and CdS thin films as an active layer prepared by chemical bath deposition method (CBD), thin film transistors (TFT) have been fabricated and studied. There are two fabrication processes developed in this work for TFTs dependent on the substrates used. A procedure for the fabrication of TFTs on Si substrates and a procedure for devices on glass substrates will be presented. Both procedures are designed for the fabrication of TFTs with an inverted gate-staggered electrode configuration. The chemical bath deposition process developed has yielded CdSe-TFTs and CdS-TFTs on thermally grown oxide/Si substrate with very good performance. Typical values of mobility for those TFTs are about 10 cm2/V-s for CdSe-TFTs and 1 Cm 2/V-s for CdS-TFTs with W = 200 mum and L = 20 mum. The ON-current values of the CdSe-TFTs and CdS-TFTs at a gate bias of 10 V and a source-drain voltage of 10 V are about 100 muA and 5 muA, respectively. The OFF-current values of the CdSe-TFTs and CdS-TFTs at the source-drain voltage of 10 V are less than 10 pA.
The incorporation of the thermal oxidation process for the fabrication of TFTs described in the first procedure is useful for studying the properties and deposition of active semiconductor layers. However, it may not be suitable for large-scale production due to the high temperatures involved and the thermal requirements of the substrate. To reduce the process temperatures and the requirements for substrates, it is necessary to employ methods other than thermal oxidation for gate oxides. In this work, in addition to thermal oxidation, the anodization method will be used to form gate oxides for the second fabrication procedure on glass substrate. In addition, some samples were prepared with thin gate dielectric films by magnetron-sputtering method. The effects of anodization conditions on the quality of the anodic dielectric were investigated by measuring the breakdown electric field and leakage current density of the metal-insulator-metal (MIM) capacitors fabricated.
Results of electrical measurements carried out on the CdSe-TFTs with A12O3 and Ta2O5 gate dielectrics showed field effect mobilities of 3.4 and 0.67 cm2/V-s and threshold voltages of 3.2 V and 8.2 V, respectively. Field effect mobilities of 0.2 and 2 cm2/V-s and threshold voltages of 4.3 and 5.2 V were observed for CdS-TFTs, again with Al2O3 and Ta 2O5 gate dielectrics. (Abstract shortened by UMI.)
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Poulter, Neil. „Novel antimicrobial plasma deposited films“. Thesis, University of Bath, 2010. https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.518294.

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Bacterial infection is a growing concern in hospital and community settings, where the issue of biofilms is a major problem. Most current methods of preventing microbial attachment and biofilm formation are limited due to application, process or inherent flaws. It was proposed that thin films containing an organometallic element could be deposited using plasma, a quick, clean surface modification technique; to create antimicrobial films which could then be applied to a range of substrates.
Several novel antimicrobial monomer systems were synthesised and characterised based on silver, copper and zinc as the active constituent with phosphines, phosphites, maleimide and a novel Schiff base among the ligand systems. All monomers were found to greatly inhibit the growth of P. aeruginosa and S. aureus in solution and on solid media. Successful monomers were deposited onto suitable substrates (glass, gold, plastics, non-woven polypropylene) using continuous wave and pulse plasma, with the films characterised and low levels of active metal found in analysis using XPS and SIMS. Films were tested against solutions of pathogenic bacteria using a number of traditional and modern microbiological techniques and found to inhibit growth under a range of conditions, potentially due to the synergistic action of metal and ligand on bacterial cells. Effective control of bacteria was exhibited at times varying from 1h to 24h+. Highly volatile compounds were produced which allowed quick deposition of plasma films, which showed excellent activity against bacteria (99.9%+ growth reduction), indicating viability for potential application. All films tested showed no inhibition or toxicity to eukaryotic cells.
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Bücher zum Thema "Film deposited on substrate"

1

Sloof, Willem Gerrit. Internal stresses and microstructure of layer/substrate assemblies: Analysis of TiC and TiN coatings chemically vapour deposited on various substrates. Delft, Netherlands: Delft University Press, 1996.

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Miyoshi, Kazuhisa. Chemical-vapor-deposited diamond film. [Cleveland, Ohio]: National Aeronautics and Space Administration, Lewis Research Center, 1999.

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Miyoshi, Kazuhisa. Chemical-vapor-deposited diamond film. [Cleveland, Ohio]: National Aeronautics and Space Administration, Lewis Research Center, 1999.

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Miyoshi, Kazuhisa. Chemical-vapor-deposited diamond film. [Cleveland, Ohio]: National Aeronautics and Space Administration, Lewis Research Center, 1999.

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Miyoshi, Kazuhisa. Chemical-vapor-deposited diamond film. [Cleveland, Ohio]: National Aeronautics and Space Administration, Lewis Research Center, 1999.

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Munns, Clifford B. X-ray diffraction studies of evaporated gold thin films deposited on aluminum nitride substrates. Monterey, Calif: Naval Postgraduate School, 1994.

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J, Mort, und Jansen F. Ph D, Hrsg. Plasma deposited thin films. Boca Raton, Fla: CRC Press, 1986.

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Horgan, Fergal G. Osteoblast response to sputter deposited calcium phosphate thin film coatings. [S.l: The author], 2004.

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Peng, Zhilong. Bio-inspired Studies on Adhesion of a Thin Film on a Rigid Substrate. Berlin, Heidelberg: Springer Berlin Heidelberg, 2015. http://dx.doi.org/10.1007/978-3-662-46955-2.

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United States. National Aeronautics and Space Administration., Hrsg. CHEMICAL-VAPOR-DEPOSITED DIAMOND FILM... NASA/TM-1999-107249/CH9... MAY 27, 1999. [S.l: s.n., 1999.

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Buchteile zum Thema "Film deposited on substrate"

1

Kaneko, Satoru, Seishiro Ohya und Ken Kobayashi. „Bi2Sr2Ca1Cu2Ox Film Deposited on Ion Implanted Substrate“. In Advances in Superconductivity VII, 1007–10. Tokyo: Springer Japan, 1995. http://dx.doi.org/10.1007/978-4-431-68535-7_229.

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Shan, Ying Chun, Xiao Dong He, Ming Wei Li und Yao Li. „Surface Morphology of Thin Film Deposited on Rotating Substrate by EB-PVD“. In Key Engineering Materials, 2238–41. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-410-3.2238.

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Magalas, Leszek B., und S. Etienne. „Mechanical Spectroscopy of Oil Films Deposited on Metallic Substrate“. In Solid State Phenomena, 157–62. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/3-908451-24-8.157.

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Jayachandran, S., A. Brolin, M. Harivishanth, K. Akash und I. A. Palani. „Study on Actuation Characteristics of NiTiCu SMA Thin Film Deposited on Flexible Substrate“. In Lecture Notes on Multidisciplinary Industrial Engineering, 501–8. Singapore: Springer Singapore, 2019. http://dx.doi.org/10.1007/978-981-32-9425-7_44.

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Ikenaga, Noriaki, Yoichi Kishi, Zenjiro Yajima und Noriyuki Sakudo. „Influence of Substrate Temperature on Texture for Deposited TiNi Films“. In Advances in Science and Technology, 30–34. Stafa: Trans Tech Publications Ltd., 2008. http://dx.doi.org/10.4028/3-908158-16-8.30.

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Singh, Salam Surjit, und Biraj Shougaijam. „Multiband Photodetection Using TiO2 Thin Film Deposited on Si Substrate Using E-beam Evaporation Technique“. In Lecture Notes in Electrical Engineering, 131–40. Singapore: Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-2308-1_15.

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Ahia, Chinedu Christian, Crispin Munyelele Mbulanga, Edson L. Meyer und Johannes Reinhardt Botha. „Development of InSb Nanostructures on GaSb Substrate by Metal-Organic Chemical Vapour Deposition: Design Considerations and Characterization“. In Chemically Deposited Nanocrystalline Metal Oxide Thin Films, 879–901. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-68462-4_31.

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Sadyrin, E. V., A. L. Nikolaev, A. S. Vasiliev und I. Yu Golushko. „Nanoindentation Derived Mechanical Properties of Au Thin Film Deposited by Pulsed Laser Sputtering on Si Substrate“. In Springer Proceedings in Materials, 215–22. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-76481-4_19.

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Calabretta, Michele, Alessandro Sitta, Salvatore Massimo Oliveri und Gaetano Sequenzia. „Analysis of Warpage Induced by Thick Copper Metal on Semiconductor Device“. In Lecture Notes in Mechanical Engineering, 55–60. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-70566-4_10.

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AbstractElectrochemical deposited (ECD) thick film copper on silicon substrate is one of the most challenging technological brick for semiconductor industry representing a relevant improvement from the state of art because of its excellent electrical and thermal conductivity compared with traditional compound such as aluminum. The main technological factor that makes challenging the industrial implementation of thick copper layer is the severe wafer warpage induced by Cu annealing process, which negatively impacts the wafer manufacturability. The aim of presented work is the understanding of warpage variation during annealing process of ECD thick (~20 µm) copper layer. Warpage has been experimental characterized at different temperature by means of Phase-Shift Moiré principle, according to different annealing profiles. A linear Finite Element Model (FEM) has been developed to predict the geometrically stress-curvature relation, comparing results with analytical models.
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Shalu, C., S. Raj Mohan, Mukesh P. Joshi und Vipul Singh. „Substrate Dependent Growth of DH6T Small Molecules in Vapor Deposited Thin Films“. In Springer Proceedings in Physics, 967–71. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-319-97604-4_147.

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Konferenzberichte zum Thema "Film deposited on substrate"

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Avile´s, F., L. Llanes, A. I. Oliva, J. E. Corona, M. Aguilar-Vega und M. I. Lori´a-Bastarrachea. „Elasto-Plastic Properties of Thin Gold Films Over Polymeric Substrates“. In ASME 2008 International Mechanical Engineering Congress and Exposition. ASMEDC, 2008. http://dx.doi.org/10.1115/imece2008-66319.

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Metallic thin films have been extensively used as coatings, interconnections, sensors and as part of micro and nano-electromechanical devices (MEMS and NEMS). The conventional substrates utilized to deposit those films are normally rigid, such as silicon. However, for applications where the substrate is subjected to significant mechanical strain (e.g. automotive coatings, electronic textiles, bioengineering, etc.) the film-substrate system needs to be flexible and conformable. Compliant polymeric substrates are ideal candidates for such a task. Some interesting mechanical properties not achieved with conventional rigid substrates can be transmitted to the film by the use of polymeric substrates. In this work, mechanical properties of 50 to 300 nm gold films deposited by thermal deposition over two thermoplastic substrates are investigated. A commercial thermoplastic, Polysulfone (“PSF”), and a home-synthesized isophthalic polyester based on the reaction of 4, 4′-(1-hydroxyphenylidene) phenol and isophthaloyl dichloride (“BAP”) [1] were used as raw materials for substrate production. Substrates were selected based on their good mechanical properties and flexibility. The use of two different substrates allows us to investigate the influence of the substrate mechanical properties in the bimaterial response. Substrates of 80 μm thickness were prepared by solution casting and cut to rectangular shapes of nominal dimensions of 30 mm × 5 mm. High purity (99.999%) commercial gold splatters were used for film deposition. Gold films with thickness of 50, 100, 200, and 300 nm were deposited onto PSF substrates by thermal evaporation inside a vacuum chamber at 3×10−5 Torr. Au films with 100 nm thickness were also deposited over BAP substrates. Four replicates of each type were deposited (at the same time) and used for tensile testing. Tensile testing of Au/PSF (film thickness 50–300 nm) and Au/BAP (film thickness 100 nm) specimens was conducted. Tests of the neat PSF and BAP substrates (6 replicates) were also conducted as a baseline. Tensile testing was conducted in a small universal testing machine with a load cell of 200 N and a cross head speed of 0.05 mm/min. The film mechanical properties were extracted from the tensile response of the film/substrate system, considered as a bimaterial. Based on sum of forces and strain compatibility, the film modulus (Ef) and stress (σf) can be extracted from characteristics of the bimaterial (EBim, σBim) and substrate (Es, σs), to generate a stress-strain curve for the film, see e.g. [2], Ef=1Af[ABimEBim−AsEs]=1+tstfEBim−tstfEs(1a)σf=1Af[P−Ps]=1+tstfσBim−tstfσs(1b) where P is the applied load, A = wt is the cross sectional area and sub-index “Bim” corresponds to the film-substrate bimaterial (ABim = w(ts+tf)). Figure 1 shows film stress (σ)-strain (ε) representative curves for Au films with different thicknesses extracted from the Au/PSF bimaterials. The film behavior presents only a small region of plasticity close to the ultimate strain. Thus, the numerical value of the maximum stress (strength) is close to its yield strength. The large plasticity of the substrate may hinder the plasticity of gold when acting as a bimaterial. As observed from this figure, the film modulus, strength and ultimate strain increase as the film thickness decreases, evidencing a “thickness-effect” not observed in bulk materials. Slightly different properties were obtained for the Au films deposited over the BAP substrate, which evidences some substrate-dependency of the film properties.
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Williams, Forrest L., L. L. Boyer, J. R. McNeil und J. J. McNally. „Optical Characteristics of Oxide Materials Deposited at Low Temperature and High Temperature Using Ion Assisted Deposition“. In Optical Interference Coatings. Washington, D.C.: Optica Publishing Group, 1988. http://dx.doi.org/10.1364/oic.1988.thb15.

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Although heating substrates during deposition to temperatures of 250°C or higher often improves film properties, this precludes the use of conventional techniques to deposit thin films onto substrate materials that degrade in high temperature environments. Ion assisted deposition (IAD) is a technique that can improve the performance of thin films produced by physical vapor deposition, even when depositing onto heated substrates.1-3 IAD can increase film packing density and improve film stoichiometry compared to conventionally deposited coatings, resulting in optical thin films having higher values of refractive index, less optical absorption and scatter, better adhesion, improved environmental stability and greater abrasion resistance.
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Karpyna, Vitalii, Arsenii Ievtushenko, Olena Olifan, Sergey Mamykin, Oleksandr Kolomys, Viktor Strelchuk, Peter Lytvyn, Sergii Starik, Volodymyr Baturin und Oleksandr Karpenko. „Substrate bias influence on the properties of ZnO:Al and ZnO:Al,N films deposited by magnetron sputtering“. In IXth INTERNATIONAL SAMSONOV CONFERENCE “MATERIALS SCIENCE OF REFRACTORY COMPOUNDS”. Frantsevich Ukrainian Materials Research Society, 2024. http://dx.doi.org/10.62564/m4-vk1027.

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ZnO-based wide bandgap semiconductor oxides with a bandgap 3.3 eV have unique optical and electrical properties that make it promising for transparent electronics, optoelectronics and solar cells [1]. Magnetron sputtering (MS) attracts our attention due to the great possibilities for the deposition oxide films with good film adhesion, high deposition rates, film uniformity and stable composition of the deposited films. Traditionally the substrate potential at MS is grounded. The negative or positive potential applied to substrate (substrate bias) can influence the film growth as well. As to single-doped ZnO:Al and codoped ZnO:Al,N films the influence of substrate bias on their structure, and optical and electrical properties has not been studied yet in detail. In this work, we focus on the investigation of indicated properties of thin films deposited on Si and glass substrates by radio frequency magnetron sputtering in a layer-by-layer regime. Sample characterization was carried out by traditional instruments: X-ray diffraction, EDX spectroscopy, Raman scattering, photoluminescence, IR Fourier transform spectrometry, optical and electrical measurements. The experimental results will be presented and discussed. Shortly, the best crystalline quality demonstrates ZnO:Al films grown with the highest negative voltage bias of -30V. We have found that applying a negative bias voltage to the substrate during film growth allows us to increase the conductivity of ZnO:Al films three times compared to zero-biased ZnO:Al films deposited at the same conditions. ZnO:Al,N films show very high specific resistivity due to acceptor complex formation. It must be noted that all deposited ZnO:Al and ZnO:Al,N films demonstrate a high transparency of over 80 % with an optical band gap in the range 3.34-3.42 eV for ZnO:Al films while ZnO:Al,N films demonstrate band gap near 3.15 eV.
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Pakseresht, A., und A. Shahbazkhan. „The Effect of Splats Morphology and Post-Treatment on the Microstructure of Sprayed Coating“. In ITSC2017, herausgegeben von A. Agarwal, G. Bolelli, A. Concustell, Y. C. Lau, A. McDonald, F. L. Toma, E. Turunen und C. A. Widener. DVS Media GmbH, 2017. http://dx.doi.org/10.31399/asm.cp.itsc2017p0879.

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Abstract In the thermal spray process, particulate materials can be melted by plasma atmosphere due to its high local temperature from 8700 °C to 15,000 °C. Therefore, the material powders turn into droplets after being melted by injection into the hot flame. Molten droplets are accelerated toward a substrate and form the splats which quickly solidify; finally, the film is formed by pile-up splats. Splat morphology and post treatment can determine the microstructure, mechanical and physical properties of the coating. In this study, BaTiO3 films were deposited onto a mirror polished stainless steel substrates kept at room temperature and 500 °C. At the elevated temperatures, the desorption of adsorbates and condensate at the substrate surface are the most important factor which change the morphology of the splats, from irregular- splash morphology to disk-like shape. Splat morphology can determine deposit microstructure and improve the coating properties. The morphology of individual splats and the post treated films were studied using scanning electron microscopy. Results indicated that the porosity in the film produced at room temperature was higher than that in the film deposited on the heated substrates. Also, post heat treatment can improve coating properties
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Matsui, Shinji, Toshinari Ichihashi und Masanobu Mito. „Electron Beam Induced Film Deposition“. In Microphysics of Surfaces, Beams, and Adsorbates. Washington, D.C.: Optica Publishing Group, 1989. http://dx.doi.org/10.1364/msba.1989.tua1.

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A novel method for directly applying material on only a very small area of a substrate (selective deposition) at low temperature has been reported by applying a gas-substrate interface1-7). When an electron beam is irradiated onto a substrate in electron beam Chemical Vapor Deposition (CVD), source gas molecules, adsorbed on a substrate, are dissociated into nonvolatile and volatile materials. Nonvolatile materials are deposited on a substrate, which volatile materials are evacuated. Nanometer structures can be fabricated by electron beam CVD, using electron beam induced surface reaction, because beam diameters as small as 5 Å can be formed with conventional electron equipment8). Computer controlled direct writing also is possible for electron beam CVD. Metals, semiconductors, and inorganic materials can be deposited by this means. Thus, electron beam CVD has some excellent advantages over other CVD methods. Namely, processing methods in microelectronic devices can be simplified and new structure devices with nanometer dimensions can be realized. When source gas molecules adsorbed on a substrate are dissociated by electron beam irradiation, Auger electrons are emitted from deposited materials at the same time. Therefore, the deposited material growth process can be observed in situ by Auger electron spectroscopy (AES)3,7). Moreover, the deposited material growth process can be observed in situ by transmission electron microscopy (TEM), if source gas molecules are adsorbed on a TEM specimen5,6). This paper presents results obtained for AES and TEM W electron beam CVD observation in situ, using the WF6 source.
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Adrian, F. J., J. Bohandy, B. F. Kim, A. N. Jette und P. Thompson. „Deposition of Metal Lines Using an Excimer Laser“. In Microphysics of Surfaces, Beams, and Adsorbates. Washington, D.C.: Optica Publishing Group, 1987. http://dx.doi.org/10.1364/msba.1987.wc3.

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A laser-induced forward transfer (LIFT) technique for transferring metal from one substrate to another has recently been reported.1 With this method, a metal film, deposited on a transparent source substrate, is irradiated by the laser which is focused at the interface between the film and substrate, Fig. 1, so that the ablated metal is expelled outward and will deposit on a target substrate located near the source. As noted previously,1 properties of the deposited metal features such as resolution, i.e., similarity of the deposited to the ablated metal region, electrical conductivity, etc., depend on a number of parameters including laser power density, film thickness, source target distance, etc.
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Velhal, Ninad B., Narayan D. Patil, Varsha D. Phadtare und Vijaya R. Puri. „Microwave properties of polypyrrole thin film deposited on inorganic substrate“. In SOLID STATE PHYSICS: Proceedings of the 58th DAE Solid State Physics Symposium 2013. AIP Publishing LLC, 2014. http://dx.doi.org/10.1063/1.4872824.

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Ohshima, C., I. Kashiwag, S. I. Ohmi und H. Iwai. „Electrical Characteristics of Gd2O3 Thin Film Deposited on Si Substrate“. In 32nd European Solid-State Device Research Conference. IEEE, 2002. http://dx.doi.org/10.1109/essderc.2002.194956.

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Abou-Hanna, Jeries, Jose Lozano und Wael Abuzaid. „Impact of Surface Roughness on Formation of Micro Cracks and Fatigue Performance“. In ASME 2010 International Mechanical Engineering Congress and Exposition. ASMEDC, 2010. http://dx.doi.org/10.1115/imece2010-37090.

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Tungsten-doped diamond-like carbon (DLC) coatings have been magnetron sputtered with chromium and chromium/tungsten carbide dual interlayers onto 410 stainless steel rods. The surface finish (Ra) of the substrate before deposition was 0.10–0.25 μm for a set of rough rods and 0.05 to 0.10 μm for a set of smooth rods. SEM analyses revealed different kinds of flaws in the as-deposited films (virgin coating). Two samples, one from each set, were fatigue tested under uni-axial tension to determine the effect of the substrate surface roughness on the performance of the coating. Surface analysis revealed a different response between films deposited on rough and smooth substrates. Severe failure modes such as spalling and wide cracks developed from initial film flaws in the rough substrate sample. Cracks and film spalling were also observed in the smooth substrate sample but the severity, in terms of crack dimensions and density was considerably lower than the rough substrate sample.
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Williams, Forrest L., R. D. Jacobson, J. R. McNeil und J. J. McNally. „Ion-assisted optical coatings deposited at low temperature“. In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1987. http://dx.doi.org/10.1364/oam.1987.ths8.

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We have examined ion-assisted deposition (IAD) of thin films on substrates at reduced temperature (<150°C). Conventional deposition techniques typically require heated substrates (~300°C). The development of deposition techniques at reduced temperature is important for coating substrate materials that cannot be subjected to elevated temperature and for improving throughput. We have observed increased values of refractive index for optical thin films of Al2O3, TiO2, and Ta2O6 deposited using IAD that approach those of bulk material. In addition, optical coatings of SiO2 and MgF2 deposited with IAD have shown improved mechanical properties compared to similar films produced without IAD. We also present results from characterizing the Raman spectra and optical scatter for these films and correlate them to IAD conditions. From these results, we conclude that the application of IAD to deposition of TiO2 at low temperature promotes the growth of crystalline structure in the film with a corresponding increase in optical scatter.
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Berichte der Organisationen zum Thema "Film deposited on substrate"

1

Dugger, M. T., J. K. J. Panitz und C. W. Vanecek. Electrophoretically-deposited solid film lubricants. Office of Scientific and Technical Information (OSTI), April 1995. http://dx.doi.org/10.2172/82450.

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Thaler, Stephen L. Integrated Substrate and Thin Film Design Methods. Fort Belvoir, VA: Defense Technical Information Center, Februar 1999. http://dx.doi.org/10.21236/ada369790.

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Lu, Kyle, Gregory Horner, Bryon Larson, Obadiah Reid, Michael Heben, Adam Phillips, Randall Ellingson und Tyler Brau. Microwave Photoconductance Spectrometer for Thin-Film Deposited Semiconductor Materials. Office of Scientific and Technical Information (OSTI), Oktober 2024. http://dx.doi.org/10.2172/2466321.

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Cooke, D. W., E. R. Gray, R. J. Houlton, H. H. Javadi und M. A. Maez. Surface Resistance of YBa(2)Cu(3)O(7) Films Deposited on LaGaO(3) Substrates. Fort Belvoir, VA: Defense Technical Information Center, Januar 1989. http://dx.doi.org/10.21236/ada228636.

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Shechtman, Dan. Transmission Electron Microscopy of the CVD Diamond Film/Substrate Interface. Fort Belvoir, VA: Defense Technical Information Center, März 1991. http://dx.doi.org/10.21236/ada234767.

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Shechtman, Dan. Transmission Electron Microscopy of the CVD Diamond Film/Substrate Interface. Fort Belvoir, VA: Defense Technical Information Center, März 1991. http://dx.doi.org/10.21236/ada234790.

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Mola, E. E., und L. Blum. The Adsorption of Incommensurate Monolayers on an Hexagonal Substrate: Lead Underpotentially Deposited on Silver (111). Fort Belvoir, VA: Defense Technical Information Center, November 1988. http://dx.doi.org/10.21236/ada222764.

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Weber, M. Improvement of small-area, amorphous-silicon thin-film photovoltaics on polymer substrate. Office of Scientific and Technical Information (OSTI), Februar 1990. http://dx.doi.org/10.2172/7202806.

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Ilias, S., F. G. King, Ting-Fang Fan und S. Roy. Separation of Hydrogen Using an Electroless Deposited Thin-Film Palladium-Ceramic Composite Membrane. Office of Scientific and Technical Information (OSTI), Dezember 1996. http://dx.doi.org/10.2172/419403.

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Hunn, John, TS Byun und James Miller. Fabrication and Characterization of Sixteen SiC Variants Deposited on the Same IPyC Substrate for Fracture Strength Testing. Office of Scientific and Technical Information (OSTI), Dezember 2009. http://dx.doi.org/10.2172/1798589.

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