Einloggen

Thematische Bibliographien / Etching

Inhaltsverzeichnis

Zeitschriftenartikel
Dissertationen
Bücher
Buchteile
Konferenzberichte
Berichte der Organisationen

Auswahl der wissenschaftlichen Literatur zum Thema „Etching“

Autor: Grafiati

Veröffentlicht am 4. Juni 2021

Zuletzt aktualisiert am 28. September 2024

Geben Sie eine Quelle nach APA, MLA, Chicago, Harvard und anderen Zitierweisen an

Wählen Sie eine Art der Quelle aus:

Machen Sie sich mit den Listen der aktuellen Artikel, Bücher, Dissertationen, Berichten und anderer wissenschaftlichen Quellen zum Thema "Etching" bekannt.

Neben jedem Werk im Literaturverzeichnis ist die Option "Zur Bibliographie hinzufügen" verfügbar. Nutzen Sie sie, wird Ihre bibliographische Angabe des gewählten Werkes nach der nötigen Zitierweise (APA, MLA, Harvard, Chicago, Vancouver usw.) automatisch gestaltet.

Sie können auch den vollen Text der wissenschaftlichen Publikation im PDF-Format herunterladen und eine Online-Annotation der Arbeit lesen, wenn die relevanten Parameter in den Metadaten verfügbar sind.

Zeitschriftenartikel zum Thema "Etching"

1

Çakır, Orhan. „Study of Etch Rate and Surface Roughness in Chemical Etching of Stainless Steel“. Key Engineering Materials 364-366 (Dezember 2007): 837–42. http://dx.doi.org/10.4028/www.scientific.net/kem.364-366.837.

Der volle Inhalt der Quelle

Annotation:

In this study, stainless steel material (X5CrNi1810) was micromachined by chemical etching method. Ferric chloride was selected as etchant which is the most widely used etchant for iron-based materials. Four different etchant concentrations (32 °Bé, 36 °Bé, 40 °Bé and 44 °Bé) were used at various etching temperature. Moreover, the influence of the addition of hydrochloric acid to main etchant on etching performance was examined. The aim of this study was to investigate the depth of etch and surface roughness affected by etchant concentration, hydrochloric acid addition and etching temperature. It was observed that etching temperature for any etchant concentration is important factor in case of depth of etch and surface roughness. It was also noticed that the addition of hydrochloric acid to main etchant increased depth of etch value at any etching temperature. The optimum etching parameters were obtained for the chemical etching of stainless steel.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

2

Chabanon, Angélique, Alexandre Michau, Michel Léon Schlegel, Deniz C. Gündüz, Beatriz Puga, Frédéric Miserque, Frédéric Schuster et al. „Surface Modification of 304L Stainless Steel and Interface Engineering by HiPIMS Pre-Treatment“. Coatings 12, Nr. 6 (25.05.2022): 727. http://dx.doi.org/10.3390/coatings12060727.

Der volle Inhalt der Quelle

Annotation:

A clean and defect-free substrate/coating interface is required to guarantee good adhesion of coatings under service conditions. For this purpose, an etching pre-treatment using High-Power Impulse Magnetron Sputtering (HiPIMS) was performed to modify the surface of 304L stainless steel. The effect of three etching procedures on the substrate properties, such as corrosion resistance and adhesion, was investigated with unprecedented spatial resolution and spectroscopic details. Glancing angle X-ray diffraction showed modification in phase content but no neoformation after steel etching. X-ray photoelectron spectroscopy confirmed the presence of etchant species (6–7 at.%) on the extreme surface of the substrate. Transmission Electron Microscopy and Atomic Probe Tomography showed that the interface was less than a few nanometers wide. Polarization curves in a nitric acid solution at boiling temperature showed, for the first time, that the Ti+ and Zr+ etchings decreased the corrosion current density compared to the untreated original surface. Scratch-test measurements indicated better substrate/coating adhesion using HiPIMS metal ion etching. Electrochemical characterization revealed that Zr etching and thin coating improve the anti-corrosion properties of stainless steel in strong nitric acid conditions.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

3

Hvozdiyevskyi, Ye Ye, R. O. Denysyuk, V. M. Tomashyk, G. P. Malanych, Z. F. Tomashyk Tomashyk und A. A. Korchovyi. „Chemical-mechanical polishing of CdTe and based on its solid solutions single crystals using HNO3 + НІ + ethylene glycol iodine-emerging solutions“. Chernivtsi University Scientific Herald. Chemistry, Nr. 819 (2019): 45–49. http://dx.doi.org/10.31861/chem-2019-819-07.

Der volle Inhalt der Quelle

Annotation:

The interaction of the CdTe and Zn0.04Cd0.96Te, Cd0.2Hg0.8Te solid solutions single crystals with the iodine-emerging etchings based on aqueous solutions of HNO3 + НІ + ethylene glycol has been investigated and etching compositions have been developed and optimized, as well as methods of their chemical treatment for the formation of high-quality surface. The dissolution of these semiconductor materials in the aqueous solutions of the (HNO3+HI+EG)/EG have been investigated and dependences “etchant composition – etching rate” with determining the regions of polishing and unpolishing solutions have been constructed. It was found that the semiconductors etching rate (chemical-mechanical polishing) decreases from 73.2 to 0.5 μm/min and the polishing features of the HNO3+HI+EG etching composition improve when the EG content is increasing. The minimum value of the etching rates is achieved when the saturation of the organic component is maximum (95 vol. %). The dependences of the chemical-mechanical polishing rate on the dilution of the base polishing etchant with ethylene glycol and the surface condition after polishing have investigated using metallographic analysis and atomic force microscopy. It was established that chemical-mechanical polishing of the CdTe and Zn0.04Cd0.96Te, Cd0.2Hg0.8Te solid solutions single crystals by the (HNO3+HI+EG)/EG solutions promote decreasing of the structural damages of the substrate and obtaining the high-quality polishing surface. It has been shown that etchant compositions of HNO3+HI+ EG with EG as a solvent completely meet the requirements for CMP etchants. Treatment of the Cd0.2Hg0.8Te crystal surfaces with new etchant mixtures allows to obtain ultra-smooth surfaces Ra = 1.5 nm. The polishing etchant compositions (HNO3+HI+EG)/EG and technological procedures of the chemical mechanical polishing for the disturbed layer elimination, controlled thinning of the plates up to reference dimension, as well as the thin layers removing and CdTe single crystals and Zn0.04Cd0.96Te, Cd0.2Hg0.8Te solid solutions finishing polishing have been optimized.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

4

Li, Hao, Yong You Geng und Yi Qun Wu. „Selective Wet Etching Characteristics of Aginsbte Phase Change Film with Ammonium Sulfide Solution“. Advanced Materials Research 529 (Juni 2012): 388–93. http://dx.doi.org/10.4028/www.scientific.net/amr.529.388.

Der volle Inhalt der Quelle

Annotation:

The selective wet etching characteristics of AgInSbTe film as a new thermal lithography material were studied with ammonium sulfide solution as etchant. Influences of vacuum-annealing temperature, etchant concentration and wet etching time on selective wet etching characteristics of the amorphous and crystalline AgInSbTe films were investigated. Experimental results indicated that the etching rate of AgInSbTe film increased with the enhancement of crystallization extent, and the etching rate of crystalline state AgInSbTe film annealed at 300°C was 35nm/min in 17wt% ammonium sulfide solution, about 17.5 times as high as that of the amorphous state. Moreover, a good surface morphology of AgInSbTe film with roughness of less than 3 nm was attained in the area of 10×10 μm2 after wet-etching. The wet etching selectivity of the AgInSbTe film was strongly influenced by the annealing temperature and the etchant concentration.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

5

Pashchenko, G. A., M. J. Kravetsky und O. V. Fomin. „Singularities of Polishing Substrates GaAs by Chemo-Dynamical and Non-Contact Chemo-Mechanical Methods“. Фізика і хімія твердого тіла 16, Nr. 3 (15.09.2015): 560–64. http://dx.doi.org/10.15330/pcss.16.3.560-564.

Der volle Inhalt der Quelle

Annotation:

The comparative investigation of two chemical polishing methods as applied to GaAs substrates is carried out. In both cases the equal etchant Br2+HBr was used. The comparison of etching rates and of surface morphology is carried out. It is revealed that numerous etching pits arise during chemo-dynamical polishing of GaAs (111) В samples but not arise during non-contact chemo-mechanical polishing of the same samples. Besides, last method allows to raise appreciably etching rate as compared with the method of chemo-dynamical polishing. That is, the same etchant behaves as selective or polishing depending on method of polishing. On the basis of worked out model of substrate surface etching near line defect the simulating of etching pit arising is carried out. The results of simulation are consistent with the idea that there are two competing ways of GaAs etching in the etchant Br2+HBr .

APA, Harvard, Vancouver, ISO und andere Zitierweisen

6

Alias, Ezzah Azimah, Muhammad Esmed Alif Samsudin, Steven DenBaars, James Speck, Shuji Nakamura und Norzaini Zainal. „N-face GaN substrate roughening for improved performance GaN-on-GaN LED“. Microelectronics International 38, Nr. 3 (23.08.2021): 93–98. http://dx.doi.org/10.1108/mi-02-2021-0011.

Der volle Inhalt der Quelle

Annotation:

Purpose This study aims to focus on roughening N-face (backside) GaN substrate prior to GaN-on-GaN light-emitting diode (LED) growth as an attempt to improve the LED performance. Design/methodology/approach The N-face of GaN substrate was roughened by three different etchants; ammonium hydroxide (NH4OH), a mixture of NH4OH and H2O2 (NH4OH: H2O2) and potassium hydroxide (KOH). Hexagonal pyramids were successfully formed on the surface when the substrate was subjected to the etching in all cases. Findings Under 30 min of etching, the highest density of pyramids was obtained by NH4OH: H2O2 etching, which was 5 × 109 cm–2. The density by KOH and NH4OH etchings was 3.6 × 109 and 5 × 108 cm–2, respectively. At standard operation of current density at 20 A/cm2, the optical power and external quantum efficiency of the LED on the roughened GaN substrate by NH4OH: H2O2 were 12.3 mW and 22%, respectively, which are higher than its counterparts. Originality/value This study demonstrated NH4OH: H2O2 is a new etchant for roughening the N-face GaN substrate. The results showed that such etchant increased the density of the pyramids on the N-face GaN substrate, which subsequently resulted in higher optical power and external quantum efficiency to the LED as compared to KOH and NH4OH.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

7

Misal, Nitin D., und Mudigonda Sadaiah. „Investigation on Surface Roughness of Inconel 718 in Photochemical Machining“. Advances in Materials Science and Engineering 2017 (2017): 1–9. http://dx.doi.org/10.1155/2017/3247873.

Der volle Inhalt der Quelle

Annotation:

The present work is focused on estimating the optimal machining parameters required for photochemical machining (PCM) of an Inconel 718 and effects of these parameters on surface topology. An experimental analysis was carried out to identify optimal values of parameters using ferric chloride (FeCl3) as an etchant. The parameters considered in this analysis are concentration of etchant, etching time, and etchant temperature. The experimental analysis shows that etching performance as well as surface topology improved by appropriate selection of etching process parameters. Temperature of the etchant found to be dominant parameter in the PCM of Inconel 718 for surface roughness. At optimal etching conditions, surface roughness was found to be 0.201 μm.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

8

Zunic, Zora, Predrag Ujic, Igor Celikovic und Kenzo Fujimoto. „ECE laboratory in the Vinca institute: Its basic characteristics and fundamentals of electrochemic etching on polycarbonate“. Nuclear Technology and Radiation Protection 18, Nr. 2 (2003): 57–60. http://dx.doi.org/10.2298/ntrp0302057z.

Der volle Inhalt der Quelle

Annotation:

This paper deals with the introductory aspects of the Electrochemical Etching Laboratory installed at the VINCA Institute in the year 2003. The main purpose of the laboratory is its field application for radon and thoron large-scale survey using passive radon/thoron UFO type detectors. Since the etching techniques together with the laboratory equipment were transferred from the National Institute of Radiological Sciences, Chiba, Japan, it was necessary for both etching conditions to be confirmed and to be checked up^ i. e., bulk etching speeds of chemical etching and electrochemical etching in the VINCA Electrochemical Etching Laboratory itself. Beside this initial step, other concerns were taken into consideration in this preliminary experimental phase such as the following: the measurable energy range of the polycarbonate film, background etch pit density of the film and its standard deviation and reproducibility of the response to alpha particles for different sets of etchings.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

9

Tellier, C. R., T. G. Leblois und A. Charbonnieras. „Chemical Etching of {hk0} Silicon Plates in EDP Part I: Experiments and Comparison with TMAH“. Active and Passive Electronic Components 23, Nr. 1 (2000): 37–51. http://dx.doi.org/10.1155/apec.23.37.

Der volle Inhalt der Quelle

Annotation:

This paper deals with the anisotropic chemical etching of various silicon plates etched in EDP. Changes with orientation in geometrical features of etched surface and in the etching shape of starting circular sections are systematically investigated. These etching shapes are compared with shapes produced by etching in KOH and TMAH solutions; This experimental study allows us to determine the dissolution slowness surface for the EDP solution and to investigate the real influence of the etchant on two dimensional and three dimensional etching shapes.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

10

Park, Tae Gun, Jong Won Han und Sang Woo Lim. „Selective Si<sub>3</sub>N<sub>4</sub> Etching for 3D NAND Integration by Using Low Concentration of H<sub>3</sub>PO<sub>4</sub>“. Solid State Phenomena 346 (14.08.2023): 137–42. http://dx.doi.org/10.4028/p-0pjfvo.

Der volle Inhalt der Quelle

Annotation:

This study investigated the etching kinetics of Si3N4 in various concentration of H3PO4 solution and the effect of Si3N4 etching enhancers on the etching process, particularly for 3D NAND trench structures. 30 wt% H3PO4 was used to etch Si3N4, which can produce higher Si3N4/SiO2 etching selectivity and similar Si3N4 etching rate compared to a conventional 85 wt% H3PO4. 30 wt% H3PO4 showed significantly improved etching performance for the Si3N4/SiO2 3D NAND structure as compared to 85 wt% H3PO4. In particular, the transportation ability of H3PO4 into 3D NAND trench structures can be improved by reducing viscosity of etchant, which can be obtained by reducing the concentration of H3PO4. In addition, Si3N4 etching enhancers were introduced to accelerate the Si3N4 etching kinetics in 30 wt% H3PO4. Addition of such additives improved the Si3N4 etching rate and Si3N4/SiO2 etching selectivity while suppressing oxide regrowth. The results provide valuable insights for optimizing selective Si3N4 etching process in 3D NAND structures.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

Mehr Quellen

Dissertationen zum Thema "Etching"

1

Lochnan, Katharine Jordan. „Whistler's etchings and the sources of his etching style, 1855-1880“. New York : Garland Pub, 1988. http://catalog.hathitrust.org/api/volumes/oclc/17107762.html.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

2

El, Otell Ziad. „Neutral beam etching“. Thesis, Open University, 2013. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.607461.

Der volle Inhalt der Quelle

Annotation:

The aim of this research is to better understand the behaviour of pulsed discharges and electron dynamics for the purpose of tailoring the plasma properties for neutral beam etching (NBE) applications. A capacitively coupled plasma formed in a research system was used for a study of pulsed tailoring in an electropositive plasma. A combination of high time resolved optical diagnostics, plasma imaging and optical emission spectroscopy, and hairpin probe measurements were used to study the electron density and the energy distribution function during the ignition phase of a repetitively pulsed plasma. Two different waveforms were used to modulate the envelope of the input RF -voltages in order to control the ignition phase, by changing the increase rate of the electron density and evolution of the electron energy distribution function (EEDF). The results of this study indicate that the increase rate of the electron density and the EEDF, during operation, can be influenced and even controlled to some extent by pulse tailoring. Electron densities of the order of 1016 m- 3 were obtained, and EEDFs of a highly non-:'1axwellian nature were characterised during the ignition phase. Also, the ignition timescales were controlled by applying pulse tailoring from a few microseconds (typically 2 μs) to a few tens of microseconds (80 μs) for the different input waveforms. An inductively coupled plasma in an industrial plasma etching tool was used to study pulse tailoring in electropositive and electronegative discharges. The same environment was used to create a source to from energetic negative ions which could then be extracted and neutralised. Similar diagnostic techniques, as those used in the research source, in addition to RF-probes were used to characterise the inductive source. Optical emission spectrascopy and electron density measurements showed. that the plasmas, almost instantaneously, ignite in the H-mode. The EEDFs were characterised by a Maxwellian distribution with an electron temperature ranging between 1.2 up to 1.6 eV, and electron densities of the order 1018 m- 3 were measured, depending on the operating conditions. This source was also used for preliminary NBE studies. Neutralisation efficiencies ranging between 70% and 95% were measured, and etch rates of 25 and 30 nm/ min were found

APA, Harvard, Vancouver, ISO und andere Zitierweisen

3

Parks, Joseph Worthy Jr. „Microscopic numerical analysis of semiconductor devices with application to avalnache photodiodes“. Diss., Georgia Institute of Technology, 1997. http://hdl.handle.net/1853/13539.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

4

Baker, Michael Douglas. „In-situ monitoring of reactive ion etching“. Diss., Georgia Institute of Technology, 1996. http://hdl.handle.net/1853/15352.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

5

Zachariasse, Jacobus Marinus Frans. „Nanostructure etching with plasmas“. Thesis, University of Cambridge, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.388386.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

6

Bloomstein, Theodore Michael. „Laser microchemical etching of silicon“. Thesis, Massachusetts Institute of Technology, 1996. http://hdl.handle.net/1721.1/11269.

Der volle Inhalt der Quelle

Annotation:

Thesis (Sc. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1996.
Includes bibliographical references (p. 195-205).
Theodore M. Bloomstein.
Sc.D.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

7

Stoikou, Maria D. „Etching of CVD diamond surfaces“. Thesis, Heriot-Watt University, 2010. http://hdl.handle.net/10399/2441.

Der volle Inhalt der Quelle

Annotation:

This thesis presents a fundamental study on etching of diamond surfaces. Details of the growth by microwave plasma Chemical Vapour Deposition (CVD) and etching by microwave hydrogen plasma, oxygen reactive ion etching (RIE) and thermal oxidation are presented. Prolonged exposure of {100} diamond surfaces to microwave hydrogen plasma was investigated by atomic force microscopy (AFM). Reduction of surface roughness has been observed while formation of etch pits has not been detected. X-ray photoelectron spectroscopy (XPS) detected the removal of graphitic carbon and reduction of oxygen under hydrogen plasma etching. Electrical sheet resistivity has been observed to be depended on the texture of the CVD diamond films as well as on the ambient exposure time. Both the surface and electronic properties are shown to agree with theoretical models. Formation of columnar structures accompanied the oxygen RIE of CVD diamond films and cubo-octahedral crystallites. Using scanning electron microscopy (SEM) and AFM the preferential formation of columnar structures in the inter-granular area of the diamond films has been detected. Surface contamination by silicon oxide has been identified by EDAX on the diamond surface and specifically on the columnar structures. Analysis by XPS demonstrated that the RIE etched surfaces were oxygen terminated and also were partially graphitised. A discussion on the mechanism of columnar formation has been presented. From the thermal oxidation of cubo-octahedral CVD diamond crystallites the activation energies and pre-exponential factors of the {100} and {111} diamond surfaces were measured, using optical profilometry, to be 221 ± 34 kJ mol-1, 2.3 x 109 nm s-1 Pa-1 and 286 ± 29 kJ mol-1, 1.9 x 1014 nm s-1 Pa-1 over the temperature range 535oC to 600oC respectively. Thermal oxidation of {100} and {111} diamond surfaces was accompanied with the formation of etch pits, increase of surface roughness and the exposure of {113} diamond surfaces between the {100} and {111} surfaces. A mechanism for the thermal oxidation of the diamond surfaces has been proposed.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

8

Hobbs, Neil Townsend. „Anisotropic etching for silicon micromachining“. Thesis, Virginia Tech, 1994. http://hdl.handle.net/10919/40632.

Der volle Inhalt der Quelle

Annotation:

Silicon micromachining is the collective name for several processes by which three dimensional structures may be constructed from or on silicon wafers. One of these processes is anisotropic etching, which utilizes etchants such as KOH and ethylene diamine pyrocatechol (EDP) to fabricate structures from the wafer bulk. This project is a study of the use of KOH to anisotropically etch (lOO)-oriented silicon wafers. The thesis provides a thorough review of the theory and principles of anisotropic etching as applied to (100) wafers, followed by a few examples which serve to illustrate the theory. Next, the thesis describes the development and experimental verification of a standardized procedure by which anisotropic etching may be reliably performed in a typical research laboratory environment. After the development of this procedure, several more etching experiments were performed to compare the effects of various modifications of the etching process. Multi-step etching processes were demonstrated, as well as simultaneous doublesided etching using two different masks. The advantages and limitations of both methods are addressed in this thesis. A comparison of experiments performed at different etchant temperatures indicates that high temperatures (800 C) produces reasonably good results at a very high etch rate, while lower temperatures (500 C) are more suited to high-precision structures since they produce smoother, higher-quality surfaces.
Master of Science

APA, Harvard, Vancouver, ISO und andere Zitierweisen

9

Astell-Burt, P. J. „Studies on etching and polymer deposition in halocarbon plasmas“. Thesis, University of Oxford, 1987. http://ora.ox.ac.uk/objects/uuid:d8fd1069-a66b-4372-8ba0-b9ca5367445c.

Der volle Inhalt der Quelle

Annotation:

Plasma etching, the selective removal of materials by reaction with chemically active species formed in a glow-discharge, is widely used by the electronics industry because of the advantages over 'wet' processes. The full potential has yet to be realised because chemical processes occuring in the plasma and at the plasma/substrate interface are incompletely understood. In this work attention was focussed on the accumulation of polymers on surfaces during plasma etching in fluorocarbon gases. An apparatus was designed and constructed to explore the conditions which give rise to these deposits by: i) The detection of the excited species such as CF and CF₂ (by optical emission spectroscopy); and ii) The rate of accumulation or removal of deposits (by means of a quartz crystal microbalance). The gases CF₄, C₂F₆, C₃F₈ and CHF₃ were used at pressures between 200-600mT, together with mixtures with H₂ and a few runs with other gases to vary the partial pressures of etching and polymerizing species. Both substrate effect of, viz silicon and thermally oxidised silicon (SiO₂), and electrode materials effects have been examined. Polymer production from C₃F₈ has been found to be more sensitive to electrode composition than that from CHF₃, but the material formed is overall less thermally stable. On the other hand, polymers produced from C₃F₈ accumulate at similar rates on Si and SiO₂, whereas those from CHF3 show a much greater liklihood of building up on Si than SiO2 . XPS and infra-red spectroscopy have been used to demonstrate that polymers arising from these two gases exhibit marked structural differences, which can be minimised by mixing H₂ with C₃F₈. These effects can be correlated with the decomposition products expected in the plasma.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

10

Toogood, Matthew John. „Studies of the chemistry of plasmas used for semiconductor etching“. Thesis, University of Oxford, 1991. http://ora.ox.ac.uk/objects/uuid:e234bbaa-d6e6-4ac8-a3dd-aa9a2c1b1e39.

Der volle Inhalt der Quelle

Annotation:

Optical diagnostic techniques have been developed and then used to investigate the chemistry of reactive species formed in CF₄ / O₂ rf parallel plate discharges, similar to those employed in semiconductor material processing. Oxygen atoms were detected by two photon laser induced fluorescence (LIF), and the technique was found to have a number of experimental caveats owing mainly to the high laser intensities required. In particular, amplified spontaneous emission (ASE), was observed from laser excitation of oxygen, and was found to influence the spontaneous fluorescence signal and thus question the use of LIF for ground state concentration measurements in these systems. The spin orbit states of the 3p ³P level were resolved for the first time, both in using high resolution excitation experiments and also as a consequence of detecting ASE. Spin orbit temperatures of less than 50° above ambient were observed. The absolute concentration of oxygen has been found to be 7.4 ± 1.4 x 10¹³ cm^-3 in a 50 mTorr, 100 W, 85% O₂ / CF₄ plasma. Optical emission was also used to study fluorine atoms and to examine the use of the actinometered emission technique as a measure of ground state concentrations. The latter was investigated directly by comparison with LIF measurements of O and CF₂, and in many cases shown to be a poor representation of the ground state concentration. To investigate the chemical and physical processes in the plasma, time resolved methods are required and a new technique, time resolved actinometry, has been developed, tested by comparison with LIF measurements and then used to study the kinetics of fluorine atoms. Results have shown the importance of wall reaction rates on the magnitude of the fluorine atom concentrations, and the sensitivity of these concentrations to the nature of the surface, particularly in the presence of oxygen and silicon. Oxygen has also been shown to be removed predominantly at the surface but the influence of gas phase reactions with CF_x radicals is apparent in discharges containing low percentages of O₂. Studies on an afterglow type, electron cyclotron resonance reactor have been carried out as a comparison to the parallel plate system, and high excitation and dissociation levels have been observed from differences in the emission intensities and from measured values of the absolute CF and CF₂ concentrations. The use of LIF as a diagnostic for CF has been investigated by probing the predissociation of the A²Σ⁺ state. Emission from the A²Σ⁺ (v = 2) level has been seen for the first time, and a J independent predissociation mechanism, with a rate of 3 x 10⁹ s^-1 has been observed.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

Mehr Quellen

Bücher zum Thema "Etching"

1

McKeever, Ian. Colour etching. London: Alan Cristea Gallery, 1997.

Den vollen Inhalt der Quelle finden

APA, Harvard, Vancouver, ISO und andere Zitierweisen

2

Art, Philadelphia Museum of, Hrsg. The Etching Club of London: A taste for painters' etchings. Philadelphia, Pa: Philadelphia Museum of Art, 2002.

Den vollen Inhalt der Quelle finden

APA, Harvard, Vancouver, ISO und andere Zitierweisen

3

Edwards, J. A. Field assisted etching. London: Controller HMSO, 1986.

Den vollen Inhalt der Quelle finden

APA, Harvard, Vancouver, ISO und andere Zitierweisen

4

Gravett, Terence. Etching: A handbook to be used with the video "Etching". Brighton: Brighton Polytechnic Media Services, 1991.

Den vollen Inhalt der Quelle finden

APA, Harvard, Vancouver, ISO und andere Zitierweisen

5

Premio internazionale biennale d'incisione Città di Monsummano Terme (3rd 2003 Monsummano Terme, Italy). Georges Rouault, De Chirico Giorgio. Pisa: Comune di Monsummano Terme, 2003.

Den vollen Inhalt der Quelle finden

APA, Harvard, Vancouver, ISO und andere Zitierweisen

6

Lowe, Ian. The etchings of Wilfred Fairclough. Aldershot: Scolar, 1990.

Den vollen Inhalt der Quelle finden

APA, Harvard, Vancouver, ISO und andere Zitierweisen

7

Lowe, Ian. The etchings of Wilfred Fairclough. Aldershot, Hants: Ashgate Editions, 1990.

Den vollen Inhalt der Quelle finden

APA, Harvard, Vancouver, ISO und andere Zitierweisen

8

van Roosmalen, A. J., J. A. G. Baggerman und S. J. H. Brader. Dry Etching for VLSI. Boston, MA: Springer US, 1991. http://dx.doi.org/10.1007/978-1-4899-2566-4.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

9

Rangelow, Ivo W. Deep etching of silocon. Wrocław: Oficyna Wydawnicza Politekchniki Wrocławskiej, 1996.

Den vollen Inhalt der Quelle finden

APA, Harvard, Vancouver, ISO und andere Zitierweisen

10

M, Manos Dennis, und Flamm Daniel L, Hrsg. Plasma etching: An introduction. Boston: Academic Press, 1989.

Den vollen Inhalt der Quelle finden

APA, Harvard, Vancouver, ISO und andere Zitierweisen

Mehr Quellen

Buchteile zum Thema "Etching"

1

Allen, David. „Etching“. In CIRP Encyclopedia of Production Engineering, 1–6. Berlin, Heidelberg: Springer Berlin Heidelberg, 2018. http://dx.doi.org/10.1007/978-3-642-35950-7_6482-3.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

2

Allen, David. „Etching“. In CIRP Encyclopedia of Production Engineering, 1–6. Berlin, Heidelberg: Springer Berlin Heidelberg, 2019. http://dx.doi.org/10.1007/978-3-642-35950-7_6482-4.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

3

Anner, George E. „Etching“. In Planar Processing Primer, 401–38. Dordrecht: Springer Netherlands, 1990. http://dx.doi.org/10.1007/978-94-009-0441-5_10.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

4

Allen, David. „Etching“. In CIRP Encyclopedia of Production Engineering, 633–38. Berlin, Heidelberg: Springer Berlin Heidelberg, 2019. http://dx.doi.org/10.1007/978-3-662-53120-4_6482.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

5

Allen, David. „Etching“. In CIRP Encyclopedia of Production Engineering, 483–88. Berlin, Heidelberg: Springer Berlin Heidelberg, 2014. http://dx.doi.org/10.1007/978-3-642-20617-7_6482.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

6

Gooch, Jan W. „Etching“. In Encyclopedic Dictionary of Polymers, 275. New York, NY: Springer New York, 2011. http://dx.doi.org/10.1007/978-1-4419-6247-8_4522.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

7

Clark, Raymond H. „Etching“. In Handbook of Printed Circuit Manufacturing, 396–416. Dordrecht: Springer Netherlands, 1985. http://dx.doi.org/10.1007/978-94-011-7012-3_20.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

8

Kondoh, Eiichi. „Etching“. In Micro- and Nanofabrication for Beginners, 159–87. Boca Raton: Jenny Stanford Publishing, 2022. http://dx.doi.org/10.1201/9781003119937-6.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

9

Bährle-Rapp, Marina. „etching“. In Springer Lexikon Kosmetik und Körperpflege, 191. Berlin, Heidelberg: Springer Berlin Heidelberg, 2007. http://dx.doi.org/10.1007/978-3-540-71095-0_3685.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

10

Cheng, Hua-Chi. „Wet Etching“. In Handbook of Visual Display Technology, 1331–41. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-14346-0_59.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

Konferenzberichte zum Thema "Etching"

1

Nishida, Akio, Tomoko Sekiguchi, Toshiaki Yamanaka, Renichi Yamada, Kuniyasu Nakamura, Satoshi Tomimatsu, K. Umemura et al. „Visualization of Local Gate Depletion in PMOSFETs Using Unique Backside Etching and Selective Etching Technique“. In ISTFA 1999. ASM International, 1999. http://dx.doi.org/10.31399/asm.cp.istfa1999p0413.

Der volle Inhalt der Quelle

Annotation:

Abstract A novel backside-analysis technique has been developed to identify the locations of failing transistors in manufactured LSIs. Local gate doping depletion in p+ salicide gates of PMOSFETs, which reduces drain current, was visualized for the first time. Our method consists of backside etching and subsequent selective wet etching of the gate electrode. Si substrate material was removed with a highly selective Si etchant without damaging the gate-oxide film. After the gate-oxide film removal, a locally depleted gate was selectively etched using the same etchant. Since the etching rates of nondoped Si and n+ Si are much higher than that of p+ Si for the etchant, the depleted p+ gates were well defined. Through TEM observation, we found that a large grain lay on an active channel region of a PMOSFET. This led us to attribute the gate depletion to the difference in the impurity diffusion between large and small grains. This demonstration confirmed that our technique should be quite useful for identifying failing transistor locations in manufactured memory and logic LSIs.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

2

„The effect of fluoride based salt etching in the synthesis of Mxene“. In Sustainable Processes and Clean Energy Transition. Materials Research Forum LLC, 2023. http://dx.doi.org/10.21741/9781644902516-8.

Der volle Inhalt der Quelle

Annotation:

Abstract. Here we reported the effect of fluoride-based salt etching in the synthesis of Ti3C2 MXene by etching Ti3AlC2 MAX phase precursor. Lithium fluoride (LiF) and ammonium fluoride were the fluoride-based salts were chosen as an etching agent in this study. The optimum etchant concentration and etching temperature of the MAX phase were evaluated. The presence of aluminium etched was determined by using the Inducted Couple Plasma Optical Emission Spectrometry (ICP-OES). The initial concentration of aluminium in Ti3AlC2 precursor was estimated based on the data from Energy Dispersive X-Ray Analysis (EDX). The study shows that the optimum etchant concentration of LiF is 5M and NH4F is 3M. Room temperature is the optimum etching temperature due to the exothermic reaction of the process. Compared to LiF, NH4F is the preferred salt for in-situ HF fluoride-based salt etchant due to the capability of the salt to etch the maximum amount of Al at a low concentration of 3M within 24 hours at room temperature.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

3

Demos, Alexandros T., H. S. Fogler, Stella W. Pang und Michael E. Elta. „Enhanced etching of InP by cycling with sputter etching and reactive ion etching“. In Santa Cl - DL tentative, herausgegeben von James A. Bondur und Terry R. Turner. SPIE, 1991. http://dx.doi.org/10.1117/12.48924.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

4

Chu, Jack O., George W. Flynn, Peter D. Brewer und Richard M. Osgood. „Laser-Initiated Dry Etching of SiO2“. In Microphysics of Surfaces, Beams, and Adsorbates. Washington, D.C.: Optica Publishing Group, 1985. http://dx.doi.org/10.1364/msba.1985.tuc5.

Der volle Inhalt der Quelle

Annotation:

In general photochemical (drying etching) process of thin films based on (UV) laser-initiated chemistry is difficult to investigate both mechanistically and kinetically. Some of the most important questions are concerned with the photo-formation of the reactive species and their (reactive) chemical interaction with the surface. The UV-laser assisted etching of SiO2 from photolysis of CH2 CHF is quite attractive for mechanistic studies of the etching process because of the relative simple (in-situ) application of IR (time-resolved) fluorescence and absorption techniques to monitor both the HF etchant and the SiF4 products within the gas-surface system. The strong oscillator and absorption strength of the HF molecules makes it possible to monitor its photo-production and follow the subsequent etching reaction with the SiO2 surface. Moreover, high resolution and sensitive diode laser absorption probes can be used to investigate the surface products (SiF4, SiF3, SiF2 and SiF) in the gas phase.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

5

Easter, Clayton, und Chad O’Neal. „XeF2 Etching of Silicon for the Release of Micro-Cantilever Based Sensors“. In ASME 2008 International Mechanical Engineering Congress and Exposition. ASMEDC, 2008. http://dx.doi.org/10.1115/imece2008-66520.

Der volle Inhalt der Quelle

Annotation:

The release of microstructures from a Si substrate depends directly on the underetching (isotropic) characteristics of the etchant used. For the purpose of this study, XeF2 gas was selected as the etchant medium. Etching by XeF2 is primarily a function of pressure, which determines the rate of interaction between the Si surface and the etchant gas. However, other factors play a large role in XeF2 etching characteristics. Testing was conducted to determine the etch rate and profile of XeF2 etching when various parameters of the structure design are changed (Si exposure area, size and dimension of structures, spacing of structures). The gas was introduced at a pressure cycle of approximately 4.0 Torr for 180 s. Uniformity of the etched surface is improved by increasing the number of etch cycles, or by increasing the gas pressure of the surrounding XeF2.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

6

Wu, Xuming, Changhe Zhou, Peng Xi, Enwen Dai, Huayi Ru und Liren Liu. „Etching quartz with inductively coupled plasma etching equipment“. In Optical Science and Technology, SPIE's 48th Annual Meeting, herausgegeben von Ernst-Bernhard Kley und Hans Peter Herzig. SPIE, 2003. http://dx.doi.org/10.1117/12.504001.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

7

Twyford, E. J., P. A. Kohl, N. M. Jokerst und N. F. Hartman. „Increased modulation depth of submicrometer gratings produced by photoelectrochemical etching of GaAs“. In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1992. http://dx.doi.org/10.1364/oam.1992.fk1.

Der volle Inhalt der Quelle

Annotation:

Submicrometer optical diffraction gratings with improved modulation depth were photoelectrochemically etched on n-GaAs. This etching technique uses an elevated etchant temperature to exceed the spatial resolution limits imposed by etching at room temperature and provides a method of photoelectrochemical etching of gratings whose period is shorter than those of previously reported photoelectrochemically etched gratings. The improved grating modulation depth, the result of an increase in electrolyte temperature, was experimentally measured by etching 0.28 μm period gratings at five different temperatures. These results are compared with theoretical predictions based on analytical expressions for the reaction rate at the etched surface. Experimentally, a 25°C increase in the etching temperature improved the grating amplitude by a factor of 1.7, which is in agreement with the theoretical predictions.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

8

Rodriguez, R., und F. V. Wells. „Species Identification and Conversion Measurements in a Carbon Tetrachloride Radio Frequency Plasma Using Coherent Raman Techniques“. In Laser Applications to Chemical Analysis. Washington, D.C.: Optica Publishing Group, 1994. http://dx.doi.org/10.1364/laca.1994.wd.7.

Der volle Inhalt der Quelle

Annotation:

Radio frequency plasmas are used in the electronics industry in various phases of microcircuitry processing. Deposition and etching are two key areas where these types of plasmas are used. In recent past, carbon tetrachloride, CC14, has been used in the etching of metals such as aluminum. However, one of the problems associated with using this gas as an etchant is the formation of a glow polymer which coats the walls of the chamber and can interfere with the etching.

APA, Harvard, Vancouver, ISO und andere Zitierweisen

9

Zhao, Yuanhe, und Yuanwei Lin. „Estimating the Etching Depth Limit in Deep Silicon Etching“. In 2019 China Semiconductor Technology International Conference (CSTIC). IEEE, 2019. http://dx.doi.org/10.1109/cstic.2019.8755766.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

10

Abraham-Shrauner, B., und C. D. Wang. „Neutral etching and shadowing in trench etching of semiconductors“. In International Conference on Plasma Science (papers in summary form only received). IEEE, 1995. http://dx.doi.org/10.1109/plasma.1995.531627.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

Berichte der Organisationen zum Thema "Etching"

1

Novick-Cohen, A. Laser Photodeposition and Etching Study. Fort Belvoir, VA: Defense Technical Information Center, Juni 1987. http://dx.doi.org/10.21236/ada190535.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

2

Kummel, Andrew C. Chemical Physics of Digital Etching. Fort Belvoir, VA: Defense Technical Information Center, August 1998. http://dx.doi.org/10.21236/ada353731.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

3

Shier, Douglas R. Laser Photodeposition and Etching Study. Fort Belvoir, VA: Defense Technical Information Center, Juni 1985. http://dx.doi.org/10.21236/ada167179.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

4

Shul, R. J., R. D. Briggs, S. J. Pearton, C. B. Vartuli, C. R. Abernathy, J. W. Lee, C. Constantine und C. Baratt. Chlorine-based plasma etching of GaN. Office of Scientific and Technical Information (OSTI), Februar 1997. http://dx.doi.org/10.2172/432987.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

5

Fischer, Arthur J., Benjamin Leung und George T. Wang. Photoelectrochemical Etching of GaN Quantum Wires. Office of Scientific and Technical Information (OSTI), September 2015. http://dx.doi.org/10.2172/1221710.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

6

Karmiol, Benjamin. Integrated Electrochemical Decontamination and Etching System. Office of Scientific and Technical Information (OSTI), Oktober 2020. http://dx.doi.org/10.2172/1673357.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

7

Ross, F. M., und P. C. Searson. Dynamic observation of electrochemical etching in silicon. Office of Scientific and Technical Information (OSTI), März 1995. http://dx.doi.org/10.2172/71306.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

8

Doyle, Kevin, und Sudhir Trivedi. Dislocation Etching Solutions for Mercury Cadmium Selenide. Fort Belvoir, VA: Defense Technical Information Center, September 2014. http://dx.doi.org/10.21236/ada609573.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

9

Vartuli, C. B., J. W. Lee und J. D. MacKenzie. ICP dry etching of III-V nitrides. Office of Scientific and Technical Information (OSTI), Oktober 1997. http://dx.doi.org/10.2172/541909.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

10

Greenberg, K. E., P. A. Miller, R. Patteson und B. K. Smith. Plasma-etching science meets technology in the MDL. Office of Scientific and Technical Information (OSTI), März 1993. http://dx.doi.org/10.2172/10147051.

Der volle Inhalt der Quelle

APA, Harvard, Vancouver, ISO und andere Zitierweisen

Wir bieten Rabatte auf alle Premium-Pläne für Autoren, deren Werke in thematische Literatursammlungen aufgenommen wurden. Kontaktieren Sie uns, um einen einzigartigen Promo-Code zu erhalten!