Auswahl der wissenschaftlichen Literatur zum Thema „Electromechanical chain, Silicon Carbide (SiC)“
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Zeitschriftenartikel zum Thema "Electromechanical chain, Silicon Carbide (SiC)"
Lee, Te-Hao, Swarup Bhunia und Mehran Mehregany. „Electromechanical Computing at 500°C with Silicon Carbide“. Science 329, Nr. 5997 (09.09.2010): 1316–18. http://dx.doi.org/10.1126/science.1192511.
Der volle Inhalt der QuelleMu, Yi, Cai Cheng, Cui-E. Hu und Xiao-Lin Zhou. „Structural and electronic transport properties of a SiC chain encapsulated inside a SiC nanotube: first-principles study“. Physical Chemistry Chemical Physics 21, Nr. 46 (2019): 25548–57. http://dx.doi.org/10.1039/c9cp03945g.
Der volle Inhalt der QuelleNiebelschütz, F., V. Cimalla, K. Brückner, R. Stephan, K. Tonisch, M. A. Hein und O. Ambacher. „Sensing applications of micro- and nanoelectromechanical resonators“. Proceedings of the Institution of Mechanical Engineers, Part N: Journal of Nanoengineering and Nanosystems 221, Nr. 2 (01.06.2007): 59–65. http://dx.doi.org/10.1243/17403499jnn100.
Der volle Inhalt der QuelleZhong, Bo, Wei Wu, Jian Wang, Lian Zhou, Jing Hou, Baojian Ji, Wenhui Deng, Qiancai Wei, Chunjin Wang und Qiao Xu. „Process Chain for Ultra-Precision and High-Efficiency Manufacturing of Large-Aperture Silicon Carbide Aspheric Mirrors“. Micromachines 14, Nr. 4 (27.03.2023): 737. http://dx.doi.org/10.3390/mi14040737.
Der volle Inhalt der QuelleKareem, Aseel A. „Enhanced thermal and electrical properties of epoxy/carbon fiber–silicon carbide composites“. Advanced Composites Letters 29 (01.01.2020): 2633366X1989459. http://dx.doi.org/10.1177/2633366x19894598.
Der volle Inhalt der QuelleErick Ogam, Z. E. A Fellah, Henry Otunga, Maxwell Mageto und Andrew Oduor. „Temperature-Dependent Elastic Constants of Substrates for Manufacture of Mems Devices“. Kabarak Journal of Research & Innovation 12, Nr. 1 (25.04.2022): 30–35. http://dx.doi.org/10.58216/kjri.v12i1.64.
Der volle Inhalt der QuelleJi, Xiaojun, Qiang Xiao und Jing Chen. „Full-Wave Analysis of Ultrahigh Electromechanical Coupling Surface Acoustic Wave Propagating Properties in a Relaxor Based Ferroelectric Single Crystal/Cubic Silicon Carbide Layered Structure“. Modelling and Simulation in Engineering 2017 (2017): 1–6. http://dx.doi.org/10.1155/2017/7078383.
Der volle Inhalt der QuelleLi, Ning, Jinfu Ding, Liguang Hu, Xiao Wang, Lirong Lu und Jianmeng Huang. „Preparation, Microstructure and Compressive Properties of Silicone GEL/SiC Composites for Elastic Abrasive“. Advanced Composites Letters 27, Nr. 3 (Mai 2018): 096369351802700. http://dx.doi.org/10.1177/096369351802700305.
Der volle Inhalt der QuelleRiviello, André Marques, und Fernando dos Santos Ortega. „Effect of Gel Chemistry on the Machinability of Green SiC Parts Produced by Gelcasting“. Materials Science Forum 727-728 (August 2012): 1596–603. http://dx.doi.org/10.4028/www.scientific.net/msf.727-728.1596.
Der volle Inhalt der QuelleCheng, Peng, Guan Jun Qiao, Di Chen Li, Ji Qiang Gao, Hong Jie Wang und Zhi Hao Jin. „RB-SiC Ceramics Derived from the Phenol Resin Added with Starch“. Key Engineering Materials 336-338 (April 2007): 1144–47. http://dx.doi.org/10.4028/www.scientific.net/kem.336-338.1144.
Der volle Inhalt der QuelleDissertationen zum Thema "Electromechanical chain, Silicon Carbide (SiC)"
Taghia, Bouazza. „Modélisation et optimisation paramétrique d'une chaine électromécanique pour la prévention des décharges partielles dans un actionneur aéronautique“. Electronic Thesis or Diss., Toulouse, INPT, 2023. http://www.theses.fr/2023INPT0121.
Der volle Inhalt der QuelleCurrently, the distribution of electrical energy aboard aircraft with high voltage direct current (HVDC) and the use of disruptive technologies such as wide bandgap (WBG) semiconductors (SiC and GaN) in static converters are among essential levers for the development of more electric aircraft. Using WBG semiconductors increases the mass density of converters; however, their fast switching (a few tens of ns) induces the creation of overvoltage due to propagation and reflection phenomena along harnesses. Overvoltage can exceed twice the voltage of the DC bus: such voltage level combined with aeronautical constraints (low pressure and/or high temperature) can generate partial discharges (PD) phenomena, which causes a premature degradation of electrical insulation systems (EIS). In this context, this PhD work focuses on the reliability of an electromechanical chain (association: MOSFET-SiC inverter + long harness + electrical machine) supplied by the HVDC 540V network; they aim to prevent the presence of PD in the winding of electrical machine from the early stage of design. On the one hand, this research aims to manage overvoltage, and for this, we develop a predictive, wide-band frequency model of a three-phase electromechanical chain; its good precision, experimentally validated, allows a better understanding of overvoltage phenomena, in particular, according to the fast switching of SiC technology. The proposed model adopts a frequency resolution with low computation time, which is suitable for use in design tools based on optimization algorithms. On the other hand, to be able to take PD into account from the first design stages, it is essential to integrate the knowledge of the partial discharges inception voltage (PDIV) according to the EIS parameters (insulating materials, thickness) and environmental parameters (pressure, temperature). In this scope, we propose to improve PDIV DAKIN's analytical formula using bibliographic data together with the results of a vast experiential investigation
Tian, Ye. „SiC Readout IC for High Temperature Seismic Sensor System“. Doctoral thesis, KTH, Integrerade komponenter och kretsar, 2017. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-213969.
Der volle Inhalt der QuelleQC 20170911
Konferenzberichte zum Thema "Electromechanical chain, Silicon Carbide (SiC)"
Feng, X. L., M. H. Matheny, R. B. Karabalin, C. A. Zorman, M. Mehregany und M. L. Roukes. „Silicon carbide (SiC) top-down nanowire electromechanical resonators“. In TRANSDUCERS 2009 - 2009 International Solid-State Sensors, Actuators and Microsystems Conference. IEEE, 2009. http://dx.doi.org/10.1109/sensor.2009.5285595.
Der volle Inhalt der QuelleReese, Samantha, Margaret Mann, Timothy Remo und Kelsey Horowitz. „Regional Manufacturing Cost Structures and Supply Chain Considerations for Medium Voltage Silicon Carbide Power Applications“. In ASME 2018 13th International Manufacturing Science and Engineering Conference. American Society of Mechanical Engineers, 2018. http://dx.doi.org/10.1115/msec2018-6601.
Der volle Inhalt der QuelleKazinczi, R., J. R. Mollinger und A. Bossche. „Down-Scale Problems of Resonant Mode SiC Devices“. In ASME 2000 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 2000. http://dx.doi.org/10.1115/imece2000-1095.
Der volle Inhalt der QuelleShen, Haoting, M. Tanjidur Rahman, Navid Asadizanjani, Mark Tehranipoor und Swarup Bhunia. „Coating-Based PCB Protection against Tampering, Snooping, EM Attack, and X-ray Reverse Engineering“. In ISTFA 2018. ASM International, 2018. http://dx.doi.org/10.31399/asm.cp.istfa2018p0290.
Der volle Inhalt der QuelleWang, B. X., und C. Y. Zhao. „Topological Phonon Polaritons for Thermal Radiation Control“. In ASME 2019 6th International Conference on Micro/Nanoscale Heat and Mass Transfer. American Society of Mechanical Engineers, 2019. http://dx.doi.org/10.1115/mnhmt2019-4002.
Der volle Inhalt der QuelleKramb, Marc, und Rolf Slatter. „The role of magnetic sensors in the hybridisation and electrification of vehicles“. In 19th International Congress of Metrology (CIM2019), herausgegeben von Sandrine Gazal. Les Ulis, France: EDP Sciences, 2019. http://dx.doi.org/10.1051/metrology/201926007.
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