Auswahl der wissenschaftlichen Literatur zum Thema „Electrical measurements C-V and G-V“
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Zeitschriftenartikel zum Thema "Electrical measurements C-V and G-V"
Özden, Şadan, Ömer Güllü und Osman Pakma. „Room temperature I–V and C–V characteristics of Au/mTPP/p-Si organic MIS devices“. European Physical Journal Applied Physics 82, Nr. 2 (Mai 2018): 20101. http://dx.doi.org/10.1051/epjap/2018180004.
Der volle Inhalt der QuellePadma, R., und V. Rajagopal Reddy. „Electrical properties and the determination of interface state density from I-V, C-f and G-f measurements in Ir/Ru/n-InGaN Schottky barrier diode“. Физика и техника полупроводников 51, Nr. 12 (2017): 1698. http://dx.doi.org/10.21883/ftp.2017.12.45189.8340.
Der volle Inhalt der QuelleFaraz, Sadia Muniza, Wakeel Shah, Naveed Ul Hassan Alvi, Omer Nur und Qamar Ul Wahab. „Electrical Characterization of Si/ZnO Nanorod PN Heterojunction Diode“. Advances in Condensed Matter Physics 2020 (13.04.2020): 1–9. http://dx.doi.org/10.1155/2020/6410573.
Der volle Inhalt der QuellePadovani, Andrea, Ben Kaczer, Milan Pesic, Attilio Belmonte, Mihaela Popovici, Laura Nyns, Dimitri Linten et al. „A Sensitivity Map-Based Approach to Profile Defects in MIM Capacitors From ${I}$ – ${V}$ , ${C}$ – ${V}$ , and ${G}$ – ${V}$ Measurements“. IEEE Transactions on Electron Devices 66, Nr. 4 (April 2019): 1892–98. http://dx.doi.org/10.1109/ted.2019.2900030.
Der volle Inhalt der QuellePananakakis, G., und G. Kamarinos. „Complete determination of the electrical interfacial parameters in Al-SiO2 (30 Å)-Si tunnel diodes using I–V, C–V, G–V measurements“. Surface Science Letters 168, Nr. 1-3 (März 1986): A137. http://dx.doi.org/10.1016/0167-2584(86)90487-1.
Der volle Inhalt der QuellePananakakis, G., und G. Kamarinos. „Complete determination of the electrical interfacial parameters in Al-SiO2 (30 Å)-Si tunnel diodes using I–V, C–V, G–V measurements“. Surface Science 168, Nr. 1-3 (März 1986): 657–64. http://dx.doi.org/10.1016/0039-6028(86)90897-6.
Der volle Inhalt der QuelleAltındal, Şemsettin, Ali Barkhordari, Gholamreza Pirgholi-Givi, Murat Ulusoy, Hamidreza Mashayekhi, Süleyman Özçelik und Yashar Azizian-Kalandaragh. „Comparison of the electrical and impedance properties of Au/(ZnOMn:PVP)/n-Si (MPS) type Schottky-diodes (SDs) before and after gamma-irradiation“. Physica Scripta 96, Nr. 12 (01.12.2021): 125881. http://dx.doi.org/10.1088/1402-4896/ac43d7.
Der volle Inhalt der QuelleKoliakoudakis, C., J. Dontas, S. Karakalos, M. Kayambaki, S. Ladas, G. Konstantinidis, S. Kennou und Konstantinos Zekentes. „Fabrication and Characterization of Cr-Based Schottky Diode on n-Type 4H-SiC“. Materials Science Forum 615-617 (März 2009): 651–54. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.651.
Der volle Inhalt der QuelleAfandiyeva, İ. M., İ. Dökme, Ş. Altındal, L. K. Abdullayeva und Sh G. Askerov. „The frequency and voltage dependent electrical characteristics of Al–TiW–Pd2Si/n-Si structure using I–V, C–V and G/ω–V measurements“. Microelectronic Engineering 85, Nr. 2 (Februar 2008): 365–70. http://dx.doi.org/10.1016/j.mee.2007.07.010.
Der volle Inhalt der QuelleGiannazzo, Filippo, Stefan Hertel, Andreas Albert, Antonino La Magna, Fabrizio Roccaforte, Michael Krieger und Heiko B. Weber. „Electrical Nanocharacterization of Epitaxial Graphene/Silicon Carbide Schottky Contacts“. Materials Science Forum 778-780 (Februar 2014): 1142–45. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.1142.
Der volle Inhalt der QuelleDissertationen zum Thema "Electrical measurements C-V and G-V"
Mohamad, Blend. „Electrical characterization of fully depleted SOI devices based on C-V measurements“. Thesis, Université Grenoble Alpes (ComUE), 2017. http://www.theses.fr/2017GREAT001/document.
Der volle Inhalt der Quelle.Thin film technologies appear as reliable solutions for Nano electronics to go beyond bulk silicon technology limits, allowing lower power bias and thus energy harvesting. Indeed, Metal Oxide Semiconductors transistors (MOSFETs) with fully depleted substrate (FDSOI for ’Fully Depleted Silicon On Insulator’) allow low static off-currents and variability improvement that enable the use of power supply biases lower than with bulk silicon, especially for SRAMs. From 14nm nodes, FDSOI generations are including SiGe channel, high-k dielectric and metal gate. All these new process modules required for technology improvement also significantly increase the complexity of the MOS devices electrical analysis and meanwhile its correlation with technology. This PhD study propose different novel methodologies for automatic and statistical parameter extraction of advanced FDSOI MOS gate stack. These methodologies are all based on capacitance versus voltage (C-V) characteristics, obtained for the capacitive coupling between metal gate, channel and back side. With such C-V characteristics, reliable methodologies are proposed, leading to the extractions of the equivalent oxide thicknesses (EOT), the effective work function of the FDSOI metal gate (WFeff), but also other parameters such as channel and buried oxide thicknesses (tch, tbox) and an effective electron affinity of the substrate well (Xeff) that includes all electrostatic effects in the buried oxide and at its interfaces. Moreover, quantum simulations are considered in order to validate the different methodologies. For experimental analysis, the study has considered coherence and complementarity of different test structures as well as the impact of back substrate polarization
Dřímalková, Lucie. „Elektrické charakteristiky diafragmového výboje v roztocích elektrolytů“. Master's thesis, Vysoké učení technické v Brně. Fakulta chemická, 2011. http://www.nusl.cz/ntk/nusl-216707.
Der volle Inhalt der QuelleHaratek, Jiří. „Výpočet rozložení teplotního pole v elektrickém stroji“. Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2017. http://www.nusl.cz/ntk/nusl-318865.
Der volle Inhalt der QuelleHorák, Luděk. „Analýza elektrických vlastností epoxidových pryskyřic s různými plnivy v teplotní a kmitočtové závislosti“. Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2018. http://www.nusl.cz/ntk/nusl-376991.
Der volle Inhalt der QuelleMittner, Ondřej. „Určování velikosti plochy a rozměrů vybraných objektů v obraze“. Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2010. http://www.nusl.cz/ntk/nusl-218637.
Der volle Inhalt der QuelleKolacia, Tomáš. „Měření elektrických veličin v distribučních sítích 22 kV a 0,4 kV s disperzními zdroji“. Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2015. http://www.nusl.cz/ntk/nusl-221196.
Der volle Inhalt der QuelleSpradlin, Joshua K. „A Study on the Nature of Anomalous Current Conduction in Gallium Nitride“. VCU Scholars Compass, 2005. http://scholarscompass.vcu.edu/etd/709.
Der volle Inhalt der QuelleHalfar, Lukáš. „Automatizované měření asynchronního motoru pomocí LabVIEW“. Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2016. http://www.nusl.cz/ntk/nusl-242151.
Der volle Inhalt der QuelleDřímalková, Lucie. „Diagnostika diafragmového výboje ve vodných roztocích a jeho aplikace pro povrchovou úpravu nanomateriálů“. Doctoral thesis, Vysoké učení technické v Brně. Fakulta chemická, 2019. http://www.nusl.cz/ntk/nusl-402110.
Der volle Inhalt der QuelleAhmed, Mustafa M. Abdalla. „Alternating-Current Thin-Film Electroluminescent Device Characterization“. Doctoral thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2008. http://www.nusl.cz/ntk/nusl-233432.
Der volle Inhalt der QuelleBücher zum Thema "Electrical measurements C-V and G-V"
B, Shaub I͡U. Novye metody ėlektrometrii v morskikh issledovanii͡akh. Moskva: "Nauka", 1985.
Den vollen Inhalt der Quelle findenZimin, E. F. Izmerenie parametrov ėlektricheskikh i magnitnykh poleĭ v provodi͡a︡shchikh sredakh. Moskva: Ėnergoatomizdat, 1985.
Den vollen Inhalt der Quelle findenNauchno-prakticheskai︠a︡ konferent︠s︡ii︠a︡ Metrologii︠a︡ ėlektricheskikh izmereniĭ v ėlektroėnergetike (10th 2007 Moscow, Russia). Metrologii︠a︡ ėlektricheskikh izmereniĭ v ėlektroėnergetike: Doklady seminara, normativno-pravovai︠a︡ baza metrologii, informat︠s︡ii︠a︡ o kompanii︠a︡kh. Moskva: DialogĖlektro, 2007.
Den vollen Inhalt der Quelle findenSegalʹ, A. M. Poverkhnostnyĭ ėffekt v tokoprovodakh i ėlementakh ėlektricheskikh apparatov. Sankt-Peterburg: Ėnergoatomizdat, Sankt-Peterburgskoe otd-nie, 1992.
Den vollen Inhalt der Quelle findenProtasevich, E. T. Novye i︠a︡vlenii︠a︡ v fizike gazovogo razri︠a︡da i radiofizike. Tomsk: Izd-vo Tomsk. politekhn. universiteta, 2002.
Den vollen Inhalt der Quelle findenProtasevich, E. T. Novye i︠a︡vlenii︠a︡ v fizike gazovogo razri︠a︡da i radiofizike. Tomsk: Izd-vo Tomsk. politekhn. universiteta, 2002.
Den vollen Inhalt der Quelle findenSobolev, Valentin Viktorovich. Metody vychislitelʹnoĭ fiziki v teorii tverdogo tela: Ėlektronnai͡a︡ struktura poluprovodnikov. Kiev: Nauk. dumka, 1988.
Den vollen Inhalt der Quelle findenSobolev, Valentin Viktorovich. Metody vychislitelʹnoĭ fiziki v teorii tverdogo tela: Ėlektronnai͡a︡ struktura dikhalʹkogenidov redkikh metallov. Kiev: Nauk. dumka, 1990.
Den vollen Inhalt der Quelle findenDhiman, Rohit, und Rajeevan Chandel. VLSI and Post-CMOS Electronics: Devices, Circuits and Interconnects, Volume 2. Institution of Engineering & Technology, 2019.
Den vollen Inhalt der Quelle findenDhiman, Rohit, und Rajeevan Chandel. VLSI and Post-CMOS Electronics: Design, Modelling and Simulation, Volume 1. Institution of Engineering & Technology, 2019.
Den vollen Inhalt der Quelle findenBuchteile zum Thema "Electrical measurements C-V and G-V"
Azarov, Alexander, Anders Hallén und Henry H. Radamson. „Electrical Characterization of Semiconductors: I–V, C–V and Hall Measurements“. In Analytical Methods and Instruments for Micro- and Nanomaterials, 197–240. Cham: Springer International Publishing, 2023. http://dx.doi.org/10.1007/978-3-031-26434-4_7.
Der volle Inhalt der QuelleDavies, Richard J., Mary K. Brumfield und Maribeth Pierce. „Noninvasive Measurement of the Electrical Properties of Breast Epithelium During the Menstrual Cycle: A Potential Biomarker for Breast Cancer Risk“. In Hormonal Carcinogenesis V, 297–304. New York, NY: Springer New York, 2008. http://dx.doi.org/10.1007/978-0-387-69080-3_27.
Der volle Inhalt der QuelleRen, Bingyan, Bei Guo, Yan Zhang, Bing Zhang, Hongyuan Li und Xudong Li. „Electrical Characterization and Measurements of Sin Thin Films On Crystalline Silicon Substrates By Pecvd“. In Proceedings of ISES World Congress 2007 (Vol. I – Vol. V), 1164–66. Berlin, Heidelberg: Springer Berlin Heidelberg, 2008. http://dx.doi.org/10.1007/978-3-540-75997-3_231.
Der volle Inhalt der QuelleSrivastava, Ajay Kumar. „Analysis and TCAD Simulation for C/V, and G/V Electrical Characteristics of Gated Controlled Diodes for the AGIPD of the EuXFEL“. In Si Detectors and Characterization for HEP and Photon Science Experiment, 135–48. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-19531-1_10.
Der volle Inhalt der QuellePiotto, M., A. N. Longhitano, P. Bruschi, M. Buiat, G. Sacchi und D. Stanzial. „Design and Fabrication of a Compact p–v Probe for Acoustic Impedance Measurement“. In Lecture Notes in Electrical Engineering, 53–56. Cham: Springer International Publishing, 2013. http://dx.doi.org/10.1007/978-3-319-00684-0_10.
Der volle Inhalt der QuelleWatcharinporn, Orrathai, Surachai Dechkunakorn, Niwat Anuwongnukroh, Chanjira Sinthanayothin, Peerapong Santiwong, Wisarut Bholsithi und Wanna Suchato. „Assessment of the Accuracy and Reliability of Cephsmile v.2 in Cephalograms and Model Measurements“. In Lecture Notes in Electrical Engineering, 413–22. Berlin, Heidelberg: Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-642-27323-0_52.
Der volle Inhalt der QuelleGhivela, Girish Chandra, Prince Kumar und Joydeep Sengupta. „Numerical Measurement of Oscillating Parameters of IMPATT Using Group IV and Group III–V Materials“. In Lecture Notes in Electrical Engineering, 405–12. Singapore: Springer Singapore, 2019. http://dx.doi.org/10.1007/978-981-32-9775-3_37.
Der volle Inhalt der QuelleStanzial, D., M. Buiat, G. Sacchi, P. Bruschi und M. Piotto. „Functional Comparison of Acoustic Admittance Measurements with a CMOS-Compatible p–v Microprobe and a Reference One“. In Lecture Notes in Electrical Engineering, 57–60. Cham: Springer International Publishing, 2013. http://dx.doi.org/10.1007/978-3-319-00684-0_11.
Der volle Inhalt der QuelleOnnes, H. Kamerlingh. „Further Experiments with Liquid Helium. D. On the Change of the Electrical Resistance of Pure Metals at very low Temperatures, etc. V. The Disappearance of the resistance of mercury“. In Through Measurement to Knowledge, 264–66. Dordrecht: Springer Netherlands, 1991. http://dx.doi.org/10.1007/978-94-009-2079-8_16.
Der volle Inhalt der QuelleGupta, Divya, Usha Rani, Rahul Singhal und Sanjeev Aggarwal. „Oblique Ar+ Sputtered SiC Thin Films: Structural, Optical, and Electrical Properties“. In Ion Beam Technology and Applications [Working Title]. IntechOpen, 2023. http://dx.doi.org/10.5772/intechopen.112928.
Der volle Inhalt der QuelleKonferenzberichte zum Thema "Electrical measurements C-V and G-V"
Hauser, J. R., und K. Ahmed. „Characterization of ultra-thin oxides using electrical C-V and I-V measurements“. In CHARACTERIZATION AND METROLOGY FOR ULSI TECHNOLOGY. ASCE, 1998. http://dx.doi.org/10.1063/1.56801.
Der volle Inhalt der QuelleRichardson, W. H., und Y. Yamamoto. „Quantum Correlation Between the Junction Voltage Fluctuation and the Photon Number Fluctuation in a Semiconductor Laser“. In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1990. http://dx.doi.org/10.1364/oam.1990.pdp15.
Der volle Inhalt der QuelleLai, LiLung, Nan Li, Qi Zhang, Tim Bao und Robert Newton. „Nanoprobing Applications with Capacitance-Voltage and Pulsed Current-Voltage Measurements for Device Failure Analysis“. In ISTFA 2015. ASM International, 2015. http://dx.doi.org/10.31399/asm.cp.istfa2015p0401.
Der volle Inhalt der QuelleIyer, D., A. Messinger, R. Crowder, Y. Zhang, O. Amster, S. Friedman, Y. Yang und F. Stanke. „Measurement of Dielectric Constant and Doping Concentration of a Cross-Sectioned Device by Quantitative Scanning Microwave Impedance Microscopy“. In ISTFA 2017. ASM International, 2017. http://dx.doi.org/10.31399/asm.cp.istfa2017p0613.
Der volle Inhalt der QuelleBaviere, R., und F. Ayela. „First Local Pressure Drops Measurements in Microchannels With Integrated Micromachined Strain Gauges“. In ASME 2004 2nd International Conference on Microchannels and Minichannels. ASMEDC, 2004. http://dx.doi.org/10.1115/icmm2004-2406.
Der volle Inhalt der QuelleCroitoru, N., M. Zafrir, S. Amirhaghi und Z. Harzion. „Schottky-type photovoltaic junctions with transparent conductor films“. In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1985. http://dx.doi.org/10.1364/oam.1985.fr6.
Der volle Inhalt der QuellePalanisamy, Vinothkumar, Jan Ketil Solberg, Bjarne Salberg und Per Thomas Moe. „Microstructure and Mechanical Properties of API 5CT L80 Casing Grade Steel Quenched From Different Temperatures“. In ASME 2012 31st International Conference on Ocean, Offshore and Arctic Engineering. American Society of Mechanical Engineers, 2012. http://dx.doi.org/10.1115/omae2012-83937.
Der volle Inhalt der QuelleCarlton, Hayden, Md Maksudul Hossain, Arman Ur Rashid, Yuxiang Chen, Alan Mantooth, Asif Imran, Fang Luo, John Harris, Alexis Krone und David Huitink. „Thermal and Electrical Co-Optimization of a Multi-Chip Double-Sided Cooled GaN Module“. In ASME 2021 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems. American Society of Mechanical Engineers, 2021. http://dx.doi.org/10.1115/ipack2021-72726.
Der volle Inhalt der QuelleDucharme, Stephen, Jack Feinberg und Ratnakar Neurgaonkar. „Electrooptic and piezoelectric measurements in photorefractive materials“. In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1986. http://dx.doi.org/10.1364/oam.1986.mv6.
Der volle Inhalt der QuelleOthman, Nur Tantiyani Ali, Je-Eun Choi und Masahiro Takei. „Electrical Tomography Sensing and Dielectrophoresis in Microchannel for 3D Particle Mixing“. In ASME 2011 9th International Conference on Nanochannels, Microchannels, and Minichannels. ASMEDC, 2011. http://dx.doi.org/10.1115/icnmm2011-58232.
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