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Thematische Bibliographien / Double Heterojunction Bipolar Transistor / Zeitschriftenartikel

Zeitschriftenartikel zum Thema „Double Heterojunction Bipolar Transistor“

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Veröffentlicht am 7. Juli 2024

Zuletzt aktualisiert am 7. Juli 2024

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1

Magno, R., J. B. Boos, P. M. Campbell, B. R. Bennett, E. R. Glaser, B. P. Tinkham, M. G. Ancona, K. D. Hobart, D. Park und N. A. Papanicolaou. „InAlAsSb∕InGaSb double heterojunction bipolar transistor“. Electronics Letters 41, Nr. 6 (2005): 370. http://dx.doi.org/10.1049/el:20058107.

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2

Yan, B. P., C. C. Hsu, X. Q. Wang und E. S. Yang. „InGaP∕GaAs0.94Sb0.06∕GaAs double heterojunction bipolar transistor“. Electronics Letters 38, Nr. 6 (2002): 289. http://dx.doi.org/10.1049/el:20020201.

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3

LIU, QINGMIN, SURAJIT SUTAR und ALAN SEABAUGH. „TUNNEL DIODE/TRANSISTOR DIFFERENTIAL COMPARATOR“. International Journal of High Speed Electronics and Systems 14, Nr. 03 (September 2004): 640–45. http://dx.doi.org/10.1142/s0129156404002600.

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A new tunnel diode/transistor circuit topology is reported, which both increases speed and reduces power in differential comparators. This circuit topology is of special interest for use in direct digital synthesis applications. The circuit topology can be extended to provide performance improvements in high speed logic and signal processing applications. The circuits are designed based on InP/GaAsSb double heterojunction bipolar transistors and AlAs/InGaAs/AlAs resonant tunneling diodes. A self-aligned and scalable fabrication approach using nitride sidewalls and chemical mechanical polishing is outlined.

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4

Chang, P. C., A. G. Baca, N. Y. Li, X. M. Xie, H. Q. Hou und E. Armour. „InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor“. Applied Physics Letters 76, Nr. 16 (17.04.2000): 2262–64. http://dx.doi.org/10.1063/1.126315.

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5

Coquillat, D., V. Nodjiadjim, S. Blin, A. Konczykowska, N. Dyakonova, C. Consejo, P. Nouvel et al. „High-Speed Room Temperature Terahertz Detectors Based on InP Double Heterojunction Bipolar Transistors“. International Journal of High Speed Electronics and Systems 25, Nr. 03n04 (September 2016): 1640011. http://dx.doi.org/10.1142/s0129156416400115.

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Compact and fast detectors, for imaging and wireless communication applications, require efficient rectification of electromagnetic radiation with frequencies approaching 1 THz and modulation bandwidth up to a few tens of GHz. This can be obtained only by using a mature technology allowing monolithic integration of detectors with low-noise amplifiers. One of the best candidates is indium phosphide bipolar transistor (InP HBT) technology. In this work, we report on room temperature high sensitivity terahertz detection by InP double-heterojunction bipolar transistors (DHBTs) operating in a large frequency range (0.25–3.1 THz). The performances of the DHBTs as terahertz sensors for communications were evaluated showing the modulation bandwidth of investigated DHBTs close to 10 GHz.

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6

Pelouard, J.-L., P. Hesto und R. Castagné. „Monte-Carlo study of the double heterojunction bipolar transistor“. Solid-State Electronics 31, Nr. 3-4 (März 1988): 333–36. http://dx.doi.org/10.1016/0038-1101(88)90289-4.

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7

Lew, K. L., und S. F. Yoon. „Model for InGaP/GaAs/InGaP double heterojunction bipolar transistor“. Journal of Applied Physics 89, Nr. 6 (15.03.2001): 3464–68. http://dx.doi.org/10.1063/1.1343888.

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8

Prinz, E. J., X. Xiao, P. V. Schwartz und J. C. Sturm. „A novel double-base heterojunction bipolar transistor for low-temperature bipolar logic“. IEEE Transactions on Electron Devices 39, Nr. 11 (1992): 2636–37. http://dx.doi.org/10.1109/16.163484.

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9

Yamina, Berrichi, und Ghaffour Kherreddine. „Modelling Electronic Characteristic of InP/InGaAs Double Heterojunction Bipolar Transistor“. International Journal of Electrical and Computer Engineering (IJECE) 5, Nr. 3 (01.06.2015): 525. http://dx.doi.org/10.11591/ijece.v5i3.pp525-530.

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In this paper, we are interested in studying InP/InGaAs heterojunction bipolar transistor NPN type. First and for most we should describe the structure of our simulation, then, we ploted at room temperature: Energy band diagram, Gummel plot, I<sub>C-</sub>V<sub>C</sub> characteristic and conduction bands for different values of V<sub>BE</sub>. The simulation of this structure has demonstrated the validity of our model and the method of the simulation.

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10

Lee, Geonyeop, Stephen J. Pearton, Fan Ren und Jihyun Kim. „Heterojunction Bipolar Transistor: 2D Material-Based Vertical Double Heterojunction Bipolar Transistors with High Current Amplification (Adv. Electron. Mater. 3/2019)“. Advanced Electronic Materials 5, Nr. 3 (März 2019): 1970015. http://dx.doi.org/10.1002/aelm.201970015.

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11

Ikossi-Anastasiou, K., A. Ezis, K. R. Evans und C. E. Stutz. „Double heterojunction bipolar transistor in AlxGa1−xAs/GaAs1−ySby system“. Electronics Letters 27, Nr. 2 (1991): 142. http://dx.doi.org/10.1049/el:19910093.

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12

Cheng, Shiou-Ying, Hsi-Jen Pan, Shun-Ching Feng, Kuo-Hui Yu, Jung-Hui Tsai und Wen-Chau Liu. „A new wide voltage operation regime double heterojunction bipolar transistor“. Solid-State Electronics 44, Nr. 4 (April 2000): 581–85. http://dx.doi.org/10.1016/s0038-1101(99)00301-9.

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13

Wang, W.-C., S.-Y. Cheng, W.-L. Chang, H.-J. Pan, Y.-H. Shie und W.-C. Liu. „Investigation of InGaP/GaAs double-delta-doped heterojunction bipolar transistor“. Semiconductor Science and Technology 13, Nr. 6 (01.06.1998): 630–33. http://dx.doi.org/10.1088/0268-1242/13/6/015.

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14

Pelouard, J. L., P. Hesto, J. P. Praseuth und L. Goldstein. „Double-heterojunction GaAlInAs/GaInAs bipolar transistor grown by molecular beam epitaxy“. IEEE Electron Device Letters 7, Nr. 9 (September 1986): 516–18. http://dx.doi.org/10.1109/edl.1986.26457.

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15

Lin, Y. S. „Breakdown characteristics of InP/InGaAs composite-collector double heterojunction bipolar transistor“. Applied Physics Letters 83, Nr. 26 (29.12.2003): 5545–47. http://dx.doi.org/10.1063/1.1637147.

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16

Berger, Paul R., Naresh Chand und Niloy K. Dutta. „An AlGaAs double‐heterojunction bipolar transistor grown by molecular‐beam epitaxy“. Applied Physics Letters 59, Nr. 9 (26.08.1991): 1099–101. http://dx.doi.org/10.1063/1.106356.

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17

Taira, K., H. Kawai und K. Kaneko. „Nonequilibrium electron transport in an AlGaAs/GaAs double‐heterojunction bipolar transistor“. Journal of Applied Physics 64, Nr. 5 (September 1988): 2767–69. http://dx.doi.org/10.1063/1.341625.

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18

Sugiyama, Hiroki, Yasuhiro Oda, Takashi Kobayashi, Masahiro Uchida und Noriyuki Watanabe. „Photoreflectance characterization of InP∕GaAsSb double-heterojunction bipolar transistor epitaxial wafers“. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 23, Nr. 3 (2005): 1004. http://dx.doi.org/10.1116/1.1924423.

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19

Kurishima, K., H. Nakajima, T. Kobayashi, Y. Matsuoka und T. Ishibashi. „InP/InGaAs double-heterojunction bipolar transistor with step-graded InGaAsP collector“. Electronics Letters 29, Nr. 3 (1993): 258. http://dx.doi.org/10.1049/el:19930177.

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20

Yuxiong, Cao, Jin Zhi, Ge Ji, Su Yongbo und Liu Xinyu. „A symbolically defined InP double heterojunction bipolar transistor large-signal model“. Journal of Semiconductors 30, Nr. 12 (Dezember 2009): 124006. http://dx.doi.org/10.1088/1674-4926/30/12/124006.

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21

Pekarik, John J. „An AlSb–InAs–AlSb double-heterojunction P-n-P bipolar transistor“. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 10, Nr. 2 (März 1992): 1032. http://dx.doi.org/10.1116/1.586407.

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22

Zhang, Q. M., K. Lee, G. L. Tan und J. M. Xu. „Analysis of the emitter-down configuration of double-heterojunction bipolar transistor“. IEEE Transactions on Electron Devices 39, Nr. 10 (1992): 2220–28. http://dx.doi.org/10.1109/16.158791.

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23

Gao, G. B., M. S. Ünlü, J. Chen, B. Mazhari, K. Adomi, G. X. Liu, Z. F. Fan und H. Morkoç. „Double-layer collector for heterojunction bipolar transistors“. Solid-State Electronics 35, Nr. 1 (Januar 1992): 57–60. http://dx.doi.org/10.1016/0038-1101(92)90304-u.

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24

Jahan, M. M., und A. F. M. Anwar. „Early voltage in double heterojunction bipolar transistors“. IEEE Transactions on Electron Devices 42, Nr. 11 (1995): 2028–29. http://dx.doi.org/10.1109/16.469414.

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25

Lin, Y. S., J. H. Huang und C. H. Ho. „Improved InP-based double heterojunction bipolar transistors“. physica status solidi (c) 4, Nr. 5 (April 2007): 1680–84. http://dx.doi.org/10.1002/pssc.200674254.

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26

McKinnon, W. R., S. P. McAlister, Z. Abid, E. E. Guzzo und S. Laframboise. „A comparison of the dc and rf characteristics of single and double InP/InGaAs heterojunction bipolar transistors“. Canadian Journal of Physics 74, S1 (01.12.1996): 239–42. http://dx.doi.org/10.1139/p96-866.

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The dc and rf characteristics for InP/InGaAs heterojunction bipolar transistors having a single heterojunction design were measured and compared with those for double heterojunction devices that employ a composite collector. Although the composite-collector design improves the breakdown characteristics of our devices the rf performance was not as good. This we partially attribute to the collector heterojunction, which causes "current blocking".

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27

Levi, A. F. J., J. R. Hayes, A. C. Gossard und J. H. English. „Electroluminescence from the base of a GaAs/AlGaAs double heterojunction bipolar transistor“. Applied Physics Letters 50, Nr. 2 (12.01.1987): 98–100. http://dx.doi.org/10.1063/1.97831.

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28

Liu, W., E. Beam und A. Khatibzadeh. „1.5-W CW S-band GaInP/GaAs/GaInP double heterojunction bipolar transistor“. IEEE Electron Device Letters 15, Nr. 6 (Juni 1994): 215–17. http://dx.doi.org/10.1109/55.286696.

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29

Coquillat, D., V. Nodjiadjim, A. Konczykowska, N. Dyakonova, C. Consejo, S. Ruffenach, F. Teppe et al. „InP Double Heterojunction Bipolar Transistor for broadband terahertz detection and imaging systems“. Journal of Physics: Conference Series 647 (13.10.2015): 012036. http://dx.doi.org/10.1088/1742-6596/647/1/012036.

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30

Liu, W. C., S. Y. Cheng, H. J. Pan, J. Y. Chen, W. C. Wang, S. C. Feng und K. H. Yu. „A new In0.5Ga0.5P/GaAs double heterojunction bipolar transistor (DHBT) prepared by MOCVD“. Le Journal de Physique IV 09, PR8 (September 1999): Pr8–1155—Pr8–1161. http://dx.doi.org/10.1051/jp4:19998144.

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31

Poh, Z. S., H. K. Yow, P. A. Houston, A. B. Krysa und D. S. Ong. „GaInP∕GaAs double heterojunction bipolar transistor with GaAs∕Al0.11Ga0.89As∕GaInP composite collector“. Journal of Applied Physics 100, Nr. 2 (15.07.2006): 026105. http://dx.doi.org/10.1063/1.2218027.

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32

Squartecchia, Michele, Tom K. Johansen, Jean-Yves Dupuy, Virginio Midili, Virginie Nodjiadjim, Muriel Riet und Agnieszka Konczykowska. „Optimization of InP DHBT stacked-transistors for millimeter-wave power amplifiers“. International Journal of Microwave and Wireless Technologies 10, Nr. 9 (07.08.2018): 999–1010. http://dx.doi.org/10.1017/s1759078718001137.

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AbstractIn this paper, we report the analysis, design, and implementation of stacked transistors for power amplifiers realized on InP Double Heterojunction Bipolar Transistors (DHBTs) technology. A theoretical analysis based on the interstage matching between all the single transistors has been developed starting from the small-signal equivalent circuit. The analysis has been extended by including large-signal effects and layout-related limitations. An evaluation of the maximum number of transistors for positive incremental power and gain is also carried out. To validate the analysis, E-band three- and four-stacked InP DHBT matched power cells have been realized for the first time as monolithic microwave integrated circuits (MMICs). For the three-stacked transistor, a small-signal gain of 8.3 dB, a saturated output power of 15 dBm, and a peak power added efficiency (PAE) of 5.2% have been obtained at 81 GHz. At the same frequency, the four-stacked transistor achieves a small-signal gain of 11.5 dB, a saturated output power of 14.9 dBm and a peak PAE of 3.8%. A four-way combined three-stacked MMIC power amplifier has been implemented as well. It exhibits a linear gain of 8.1 dB, a saturated output power higher than 18 dBm, and a PAE higher than 3% at 84 GHz.

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33

Chen, Chung‐Zen, Si‐Chen Lee und Hao‐Hsiung Lin. „Design ofn‐p‐nAlGaAs double‐heterojunction bipolar transistors“. Journal of Applied Physics 62, Nr. 9 (November 1987): 3976–79. http://dx.doi.org/10.1063/1.339196.

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34

Yee, Marcus, und Peter A. Houston. „High current effects in double heterojunction bipolar transistors“. Semiconductor Science and Technology 20, Nr. 5 (15.03.2005): 412–17. http://dx.doi.org/10.1088/0268-1242/20/5/015.

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35

Wai Lee und C. G. Fonstad. „In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As abrupt double-heterojunction bipolar transistors“. IEEE Electron Device Letters 7, Nr. 12 (Dezember 1986): 683–85. http://dx.doi.org/10.1109/edl.1986.26519.

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36

Yow, H. K., T. W. Lee, C. C. Button, P. A. Houston, J. S. Roberts und H. Y. Lee. „Double heterojunction bipolar transistors Using AlGaInP/GaAs/GaInP“. Electronics Letters 30, Nr. 2 (20.01.1994): 167–69. http://dx.doi.org/10.1049/el:19940092.

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37

Hidaka, Osamu, Kouhei Morizuka und Hiroshi Mochizuki. „Thermal Runaway Tolerance in Double-Heterojunction Bipolar Transistors“. Japanese Journal of Applied Physics 34, Part 1, No. 2B (28.02.1995): 886–88. http://dx.doi.org/10.1143/jjap.34.886.

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38

J. García-Loureiro, Antonio, und Juan M. López-González. „A model for abrupt double heterojunction bipolar transistors“. International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 17, Nr. 1 (Januar 2004): 29–42. http://dx.doi.org/10.1002/jnm.522.

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39

Laurent, S., J. C. Nallatamby, M. Prigent, M. Riet und V. Nodjiadjim. „Characterization and Modeling of DHBT in InP/GaAsSb Technology for the Design and Fabrication of a Ka Band MMIC Oscillator“. Active and Passive Electronic Components 2012 (2012): 1–15. http://dx.doi.org/10.1155/2012/796973.

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This paper presents the design of an MMIC oscillator operating at a 38 GHz frequency. This circuit was fabricated by the III–V Lab with the new InP/GaAsSb Double Heterojunction Bipolar Transistor (DHBT) submicronic technology (We=700 nm). The transistor used in the circuit has a 15 μm long two-finger emitter. This paper describes the complete nonlinear modeling of this DHBT, including the cyclostationary modeling of its low frequency (LF) noise sources. The specific interest of the methodology used to design this oscillator resides in being able to choose a nonlinear operating condition of the transistor from an analysis in amplifier mode. The oscillator simulation and measurement results are compared. A 38 GHz oscillation frequency with 8.6 dBm output power and a phase noise of −80 dBc/Hz at 100 KHz offset from carrier have been measured.

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40

Yee, M., P. A. Houston und J. P. R. David. „Measurement of electron saturation velocity in Ga0.52In0.48P in a double heterojunction bipolar transistor“. Journal of Applied Physics 91, Nr. 3 (Februar 2002): 1601–5. http://dx.doi.org/10.1063/1.1428100.

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41

Cheng, Shiou-Ying, Wei-Chou Wang, Wen-Lung Chang, Jing-Yuh Chen, His-Jen Pan und Wen-Chau Liu. „A new InGaP/GaAs double delta-doped heterojunction bipolar transistor (D 3 HBT)“. Thin Solid Films 345, Nr. 2 (Mai 1999): 270–72. http://dx.doi.org/10.1016/s0040-6090(98)01422-9.

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42

Lee, Si‐Chen, und Hao‐Hsiung Lin. „Transport theory of the double heterojunction bipolar transistor based on current balancing concept“. Journal of Applied Physics 59, Nr. 5 (März 1986): 1688–95. http://dx.doi.org/10.1063/1.336432.

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43

Welty, R. J., H. P. Xin, K. Mochizuki, C. W. Tu und P. M. Asbeck. „GaAs/Ga0.89In0.11N0.02As0.98/GaAs NpN double heterojunction bipolar transistor with low turn-on voltage“. Solid-State Electronics 46, Nr. 1 (Januar 2002): 1–5. http://dx.doi.org/10.1016/s0038-1101(01)00315-x.

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44

Schreiber, H. U. „High-speed double mesa Si/SiGe heterojunction bipolar transistor fabricated by selfalignment technology“. Electronics Letters 28, Nr. 5 (1992): 485. http://dx.doi.org/10.1049/el:19920306.

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45

Wang, Wei-Chou, Jing-Yuh Chen, Hsi-Jen Pan, Shun-Ching Feng, Kuo-Hui Yu und Wen-Chau Liu. „Study of In0.49Ga0.51P/GaAs/In0.49Ga0.51P doubleδ-doped heterojunction bipolar transistor“. Superlattices and Microstructures 26, Nr. 1 (Juli 1999): 23–33. http://dx.doi.org/10.1006/spmi.1999.0701.

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46

Shivan, T., E. Kaule, M. Hossain, R. Doerner, T. Johansen, D. Stoppel, S. Boppel, W. Heinrich, V. Krozer und M. Rudolph. „Design and modeling of an ultra-wideband low-noise distributed amplifier in InP DHBT technology“. International Journal of Microwave and Wireless Technologies 11, Nr. 7 (03.05.2019): 635–44. http://dx.doi.org/10.1017/s1759078719000515.

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AbstractThis paper reports on an ultra-wideband low-noise distributed amplifier (LNDA) in a transferred-substrate InP double heterojunction bipolar transistor (DHBT) technology which exhibits a uniform low-noise characteristic over a large frequency range. To obtain very high bandwidth, a distributed architecture has been chosen with cascode unit gain cells. Each unit cell consists of two cascode-connected transistors with 500 nm emitter length and ft/fmax of ~360/492 GHz, respectively. Due to optimum line-impedance matching, low common-base transistor capacitance, and low collector-current operation, the circuit exhibits a low-noise figure (NF) over a broad frequency range. A 3-dB bandwidth from 40 to 185 GHz is measured, with an NF of 8 dB within the frequency range between 75 and 105 GHz. Moreover, this circuit demonstrates the widest 3-dB bandwidth operation among all reported single-stage amplifiers with a cascode configuration. Additionally, this work has proposed that the noise sources of the InP DHBTs are largely uncorrelated. As a result, a reliable prediction can be done for the NF of ultra-wideband circuits beyond the frequency range of the measurement equipment.

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47

Makimoto, Toshiki, Kenji Kurishima, Takashi Kobayashi und Tadao Ishibashi. „InP/InGaAs Double Heterojunction Bipolar Transistors Grown on Si“. Japanese Journal of Applied Physics 30, Part 1, No. 12B (30.12.1991): 3815–17. http://dx.doi.org/10.1143/jjap.30.3815.

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48

Coquillat, Dominique, Alexandre Duhant, Meriam Triki, Virginie Nodjiadjim, Agnieszka Konczykowska, Muriel Riet, Nina Dyakonova, Olivier Strauss und Wojciech Knap. „InP double heterojunction bipolar transistors for terahertz computed tomography“. AIP Advances 8, Nr. 8 (August 2018): 085320. http://dx.doi.org/10.1063/1.5039331.

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49

Shyh-Chiang Shen, Yi-Che Lee, Hee-Jin Kim, Yun Zhang, Suk Choi, R. D. Dupuis und Jae-Hyun Ryou. „Surface Leakage in GaN/InGaN Double Heterojunction Bipolar Transistors“. IEEE Electron Device Letters 30, Nr. 11 (November 2009): 1119–21. http://dx.doi.org/10.1109/led.2009.2030373.

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50

Lo, C. F., F. Ren, C. Y. Chang, S. J. Pearton, S. H. Chen, C. M. Chang, S. Y. Wang, J. I. Chyi und I. I. Kravchenko. „Fabrication of InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors“. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 29, Nr. 3 (Mai 2011): 031205. http://dx.doi.org/10.1116/1.3589808.

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