Auswahl der wissenschaftlichen Literatur zum Thema „Dioxide de niobium“
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Zeitschriftenartikel zum Thema "Dioxide de niobium"
Sheppard, L. R., A. J. Atanacio, T. Bak, J. Nowotny, M. K. Nowotny und K. E. Prince. „Niobium diffusion in niobium-doped titanium dioxide“. Journal of Solid State Electrochemistry 13, Nr. 7 (06.11.2008): 1115–21. http://dx.doi.org/10.1007/s10008-008-0717-x.
Der volle Inhalt der QuelleAtanacio, Armand J., Tadeusz Bak und Janusz Nowotny. „Niobium Segregation in Niobium-Doped Titanium Dioxide (Rutile)“. Journal of Physical Chemistry C 118, Nr. 21 (19.05.2014): 11174–85. http://dx.doi.org/10.1021/jp4110536.
Der volle Inhalt der QuelleSheppard, L. R. „Niobium Surface Segregation in Polycrystalline Niobium-Doped Titanium Dioxide“. Journal of Physical Chemistry C 117, Nr. 7 (07.02.2013): 3407–13. http://dx.doi.org/10.1021/jp311392d.
Der volle Inhalt der QuelleSong, Li, Alexander Eychmueller, R. J. St. Pierre und M. A. El-Sayed. „Reaction of carbon dioxide with gaseous niobium and niobium oxide clusters“. Journal of Physical Chemistry 93, Nr. 6 (März 1989): 2485–90. http://dx.doi.org/10.1021/j100343a050.
Der volle Inhalt der QuelleNico, C., M. R. N. Soares, M. Matos, R. Monteiro, M. P. F. Graça, T. Monteiro, F. M. Costa und M. A. Valente. „Exotic Manganese Dioxide Structures in Niobium Oxides Capacitors“. Microscopy and Microanalysis 18, S5 (August 2012): 99–100. http://dx.doi.org/10.1017/s1431927612013153.
Der volle Inhalt der QuelleSievers, M. R., und P. B. Armentrout. „Gas phase activation of carbon dioxide by niobium and niobium monoxide cations“. International Journal of Mass Spectrometry 179-180 (November 1998): 103–15. http://dx.doi.org/10.1016/s1387-3806(98)14064-2.
Der volle Inhalt der QuelleCho, Yong Hoon, Soon Ki Jeong und Yang Soo Kim. „Electrochemical Properties of Chemically Etched-NbO2 as a Negative Electrode Material for Lithium Ion Batteries“. Advanced Materials Research 1120-1121 (Juli 2015): 115–18. http://dx.doi.org/10.4028/www.scientific.net/amr.1120-1121.115.
Der volle Inhalt der QuelleMuhammad Hussian, Hasan Mahmood, Muhammad Abdullah, Sikandar Raza,. „Computing Topological Indices for Niobium Dioxide and Metal-Organic Frameworks via M-Polynomials“. Power System Technology 48, Nr. 1 (08.04.2024): 211–27. http://dx.doi.org/10.52783/pst.268.
Der volle Inhalt der QuelleGautam, Subodh K., Arkaprava Das, S. Ojha, D. K. Shukla, D. M. Phase und Fouran Singh. „Electronic structure modification and Fermi level shifting in niobium-doped anatase titanium dioxide thin films: a comparative study of NEXAFS, work function and stiffening of phonons“. Physical Chemistry Chemical Physics 18, Nr. 5 (2016): 3618–27. http://dx.doi.org/10.1039/c5cp07287e.
Der volle Inhalt der QuelleAlharthi, F. A., F. Cheng, E. Verrelli, N. T. Kemp, A. F. Lee, M. A. Isaacs, M. O’Neill und S. M. Kelly. „Solution-processable, niobium-doped titanium oxide nanorods for application in low-voltage, large-area electronic devices“. Journal of Materials Chemistry C 6, Nr. 5 (2018): 1038–47. http://dx.doi.org/10.1039/c7tc04197g.
Der volle Inhalt der QuelleDissertationen zum Thema "Dioxide de niobium"
Fakih, Ali. „Current controlled negative differential resistance in niobium dioxide“. Electronic Thesis or Diss., Sorbonne université, 2019. http://www.theses.fr/2019SORUS099.
Der volle Inhalt der QuelleNiobium dioxide (NbO2) has been recently gaining a lot of interest in the fields of solid state physics and technological nano-devices. On one hand, NbO2 undergoes a structural distortion accompanied by an electronic phase transition where the material changes from an insulating state at room temperature into a metallic state at temperatures above ∼ 1080 K. On the other hand, NbO2 exhibits a negative differential resistance phase under the application of electric current, a phenomenon known as current-controlled negative differential resistance CC-NDR. In this thesis, we have fabricated thin films of NbO2 by RF-mangentron sputtering technique on amorphous and crystalline substrates (glass and silicon). The deposited films were always amorphous, and annealing treatment of the as-deposited films was necessary to achieve crystallinity. . Upon performing electronic studies on NbO2, we witnessed CC-NDR with a hysteresis in the V(I) curves. We showed that hysteresis in CC-NDR is due to temperature inhomogeneity. Simultaneous electronic transport and Raman measurements show that CC-NDR is not associated to a phase transition. Moreover, we showed that there is a similar temperature driven change in conductivity in both the amorphous and the crystalline samples, however, the amorphous sample is a better electronic and thermal conductor. Finally, we proved that the CC-NDR may be simplyexplained by the creation of carriers by temperature in a semiconductor, without the need for invoking more complicated transport mechanisms
Song, Inho. „Defect structure and DC electrical conductivity of titanium dioxide-niobium dioxide solid solution“. Case Western Reserve University School of Graduate Studies / OhioLINK, 1990. http://rave.ohiolink.edu/etdc/view?acc_num=case1054571769.
Der volle Inhalt der QuelleSnook, M. W. G. „The preparation and optical properties of niobium dioxide films“. Thesis, University of Bradford, 1986. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.374936.
Der volle Inhalt der QuelleSanghera, J. S. „Electrical properties of aluminosilicate glazes containing niobium doped titanium dioxide“. Thesis, Imperial College London, 1985. http://hdl.handle.net/10044/1/37846.
Der volle Inhalt der QuelleSirjita, Eduard-Nicolae. „Elaboration and correlation of structure/optical and electrical properties of phase transition oxide materials (VO2, W-doped VO2 and NbO2)“. Electronic Thesis or Diss., Limoges, 2024. https://aurore.unilim.fr/theses/nxfile/default/cfd27744-856a-4645-a183-cbf2ff31ef34/blobholder:0/2024LIMO0005.pdf.
Der volle Inhalt der QuelleThis thesis aims at the realization and structural, optical, and electrical characterization of thin films of oxide materials with insulator-to-metal transition (MIT) properties, more specifically vanadium oxides (VO2 and W-doped VO2) and niobium dioxide (NbO2). The deposition of these thin films was performed using reactive magnetron sputtering in an Ar/ O2 atmosphere. During the optimization process of the thin films, valuable insights were gained into the effects the fabrication process has over the structural, optical and electrical characteristics. Furthermore, the films were integrated into various devices such as thermally/ electrically activated THz modulators, optically reconfigurable metacanvases and oscillating devices. The information provided in this manuscript is of high interest for the integration of VO2 and W-doped VO2 films into devices that can operate in various fields. This work also deepens our understanding of NbO2 films, an area with comparatively less research but of particular interest for applications requiring higher temperature stability
Duncan, Morris. „Surface and sensor studies of doped titanium dioxide“. Thesis, University of Oxford, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.365772.
Der volle Inhalt der QuelleModingwane, Boitshoko Goitseone. „Investigation of Pt supported on carbon, ZrO2, Ta2O5 and Nb2O5 as electrocatalysts for the electro–oxidation of SO2 / Boitshoko Goitseone Modingwane“. Thesis, North-West University, 2011. http://hdl.handle.net/10394/5557.
Der volle Inhalt der QuelleThesis (M.Sc. (Chemistry))--North-West University, Potchefstroom Campus, 2011.
Stöver, Julian. „Defect related transport mechanism in the resistive switching materials SrTiO3 and NbO2“. Doctoral thesis, Humboldt-Universität zu Berlin, 2021. http://dx.doi.org/10.18452/23122.
Der volle Inhalt der QuelleIn this work, the impact of crystal defects on the resistive switching materials SrTiO3 and NbO2 is investigated. The work is divided into two parts. In the first part, NbO2 (001) thin films are studied. So far, resistivities measured for NbO2 thin films in the insulating phase are by a factor of 200 lower than the 10 kΩ cm resistivity measured in NbO2 single crystals. To make this material applicable for resistive switching, the resistivity in the insulating phase has to be increased to effectively block the current in the high resistive state. Throughout the investigations presented in this work, the resistivity of NbO2 thin films is increased to 945 Ω cm. It is shown that conductive percolation paths along the grain boundaries are responsible for the decrease in resistivity. Temperature-dependent conductivity measurements identified defect states responsible for the reduction in resistivity from the theoretical value. In the second part of this work, the influence of the Ti anti-site defect on resistive switching in SrTiO3 thin films grown by metal-organic vapor phase epitaxy is studied. Both stoichiometric and strontium deficient thin films are studied. It is shown via temperature-dependent permittivity measurements that crystal defects harden the soft phonon mode and polar nano regions are formed in highly strontium deficient films, which was attributed to the formation of Ti antisite defects. In addition, highly strontium deficient SrTiO3 films are shown to exhibit stable resistive switching with an on-off ratio of 2e7 at 10 K, whereas stoichiometric thin-films do not show stable switching. A diode-like transport mechanism based on Schottky emission in the high-resistance state and dominated by defect-assisted tunneling current in the low-resistance state is identified. From this, a new model for resistive switching based on the Ti antisite defect and the induced ferroelectricity is developed.
Khair, Mira. „Oxydo-réduction et spéciation des produits de fission corrosifs dans les combustibles oxydes : évaluation des bénéfices d'un combustible tamponné en pO2“. Thesis, Bordeaux, 2019. http://www.theses.fr/2019BORD0360.
Der volle Inhalt der QuelleImprovement of nuclear fuel performances requires reducing the stability of corrosion fission gas, in particular the speciation of potentially corrosive fission products (Cs, I, Te). Doping uranium dioxide with an oxydo-redox buffer couple is the improvement axis considered in this work. It aims at improving redox buffer couple effect on pO2 (oxygen partial pressure) and their impact on properties of speciation of fission products in UO2. Actually, in typical nominal operation, the oxygen potential is quite close to that imposed by the (Mo/MoO2) buffer. The first objective of this work was to clarify the thermochemistry (solubility and speciation in UO2) of the (Mo/MoO2) couple. We studied the MoO2 ⇌ Mo transition in UO2 as a function of pO2 and temperature by X-ray Absorption Spectroscopy (XAS) in situ at the KARA synchrotron (Germany). We show that the oxidation reactions of molybdenum are always thermodynamically possible, whatever the temperature conditions but with a slow kinetics at 800°C. The oxidation rate increases with temperature. In addition, the solubility of Mo in UO2 was measured by SIMS (Secondary Ion Mass Spectrometry) and EPMA (Electron probe micro-analyzer). We found a solubility limit of the order of 10-4 mol Mo/mol U, i.e. 0.01 %weight of Mo/UO2.Then niobium, with its redox forms Nb2O5/NbO2, has been identified as a promising candidate due to different selection criteria (physico-chemical and neutronic properties). The first step was to prepare UO2 with this buffer. A specific manufacturing process of the buffered UO2 fuel, doped with the (Nb2O5/NbO2) couple has been developed in order to preserve both oxido-reducing forms of the oxygen buffer in the pellets while sintering. This process has been also validated for UO2 doped with the (MoO2/Mo) couple. We have shown that the initially introduced (Nb2O5/NbO2) buffer was transformed during sintering into (UNb2O7/NbO2). The equilibrium of the latter couple is very close to that of the initial buffer and therefore it can fulfill its role of pO2 control in the targeted domain.Then, the final objective was the validation of the buffer effect related to the addition of (Nb2O5/NbO2) in UO2. So we first studied by means of High Resolution X-Ray diffraction at high temperature (HR HT XRD) and Neutron Diffraction (DN) the variation of the lattice parameter of the UO2 fluorite matrix in presence of the niobium pO2 buffer. The latter can act as a local buffer enforcing a stabilization of the pO2 within the system and therefore of the stoichiometry of the UO2+x matrix. We also show that the U-Nb-O system has many ternary phases including Nb4+ and Nb5+cations, all stable on a narrow domain of pO2. Thus, these different ternary phases participate to buffer systems, which make it possible to regulate the oxido-reducing disturbances imposed on the material without any notable modification of the pO2 (stabilization of the lattice parameter).Then, the UO2 pellets elaborated with the (Nb2O5/NbO2) buffer couple were implanted with cesium, iodine, molybdenum and tellurium ions in a thin surface layer (1 µm approximately). Speciation were characterized by X-Ray Absorption Spectroscopy, using synchrotron radiation (KARA)
LORENZI, ROBERTO. „Silica based functional materials: - Charge transport in nanostructured SnO2: SiO2 thin films. - Second harmonic generation in niobium potassium silicate glasses. - Tapered silica optical microfibres for gas sensors“. Doctoral thesis, Università degli Studi di Milano-Bicocca, 2010. http://hdl.handle.net/10281/10933.
Der volle Inhalt der QuelleBücher zum Thema "Dioxide de niobium"
Snook, Michael William George. The preparation and optical properties of niobium dioxide films: ... and comparison... with Nb02 singlecrystals and V02 films. Bradford, 1986.
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R., Deeksha, und Deepak Kumar. „Design of Supported Catalysts for Nitrogen Reduction Reaction: A Continuous Challenge“. In Advanced Materials and Nano Systems: Theory and Experiment (Part-1), 66–91. BENTHAM SCIENCE PUBLISHERS, 2022. http://dx.doi.org/10.2174/9789815050745122010007.
Der volle Inhalt der QuelleKonferenzberichte zum Thema "Dioxide de niobium"
Sheppard, L. R., A. Atanacio, T. Bak, J. Nowotny und K. E. Prince. „Effect of niobium segregation on surface properties of titanium dioxide“. In SPIE Optics + Photonics, herausgegeben von Lionel Vayssieres. SPIE, 2006. http://dx.doi.org/10.1117/12.674547.
Der volle Inhalt der QuelleVogel, Ralf, und Horst Weller. „Sensitization of titanium dioxide and niobium pentoxide electrodes by strongly quantized semiconductor particles“. In Optical Materials Technology for Energy Efficiency and Solar Energy, herausgegeben von Anne Hugot-Le Goff, Claes-Goeran Granqvist und Carl M. Lampert. SPIE, 1992. http://dx.doi.org/10.1117/12.130575.
Der volle Inhalt der QuelleRibeiro, Joana M. „Transparent Niobium-Doped Titanium Dioxide Thin Films with High Seebeck Coefficient for Thermoelectric Applications“. In 64th Society of Vacuum Coaters Annual Technical Conference. Society of Vacuum Coaters, 2021. http://dx.doi.org/10.14332/svc21.proc.0019.
Der volle Inhalt der QuelleKao, M. C., H. Z. Chen, S. L. Young, B. Ni Chuang, W. W. Jiang und J. S. Song. „The structure and optical properties of sol-gel derived transparent titanium dioxide thin films doped with niobium“. In 2011 IEEE 4th International Nanoelectronics Conference (INEC). IEEE, 2011. http://dx.doi.org/10.1109/inec.2011.5991730.
Der volle Inhalt der QuelleChen, Hsi-Chao, Yu-Hung Yen, Ya-Jun Zheng, Jhe-Ming Chang, Yu-Ren Zhao und Tan-Fu Liu. „Investigation of Optoelectronic and Band-gap of Niobium Doped Titanium Dioxide Film Deposited by Electron-beam Evaporation with Ion-beam Assisted“. In Novel Optical Materials and Applications. Washington, D.C.: OSA, 2020. http://dx.doi.org/10.1364/noma.2020.jtu4c.3.
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