Auswahl der wissenschaftlichen Literatur zum Thema „Diode à avalanche à photon unique“
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Zeitschriftenartikel zum Thema "Diode à avalanche à photon unique"
Finkelstein, H., M. J. Hsu und S. C. Esener. „Dual-junction single-photon avalanche diode“. Electronics Letters 43, Nr. 22 (2007): 1228. http://dx.doi.org/10.1049/el:20072355.
Der volle Inhalt der QuelleKodet, Jan, Ivan Prochazka, Josef Blazej, Xiaoli Sun und John Cavanaugh. „Single photon avalanche diode radiation tests“. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 695 (Dezember 2012): 309–12. http://dx.doi.org/10.1016/j.nima.2011.11.001.
Der volle Inhalt der QuelleLee, Changhyuk, Ben Johnson und Alyosha Molnar. „Angle sensitive single photon avalanche diode“. Applied Physics Letters 106, Nr. 23 (08.06.2015): 231105. http://dx.doi.org/10.1063/1.4922526.
Der volle Inhalt der QuelleZappa, F., A. Gulinatti, P. Maccagnani, S. Tisa und S. Cova. „SPADA: single-photon avalanche diode arrays“. IEEE Photonics Technology Letters 17, Nr. 3 (März 2005): 657–59. http://dx.doi.org/10.1109/lpt.2004.840920.
Der volle Inhalt der QuelleChen, Zhen, Bo Liu, Guangmeng Guo, Kangjian Hua und Weiqiang Han. „Photon Counting Heterodyne With a Single Photon Avalanche Diode“. IEEE Photonics Technology Letters 33, Nr. 17 (01.09.2021): 931–34. http://dx.doi.org/10.1109/lpt.2021.3098553.
Der volle Inhalt der QuelleTisa, S., F. Zappa, A. Tosi und S. Cova. „Electronics for single photon avalanche diode arrays“. Sensors and Actuators A: Physical 140, Nr. 1 (Oktober 2007): 113–22. http://dx.doi.org/10.1016/j.sna.2007.06.022.
Der volle Inhalt der QuelleLi, Yichen, Majid Safari, Robert Henderson und Harald Haas. „Optical OFDM With Single-Photon Avalanche Diode“. IEEE Photonics Technology Letters 27, Nr. 9 (01.05.2015): 943–46. http://dx.doi.org/10.1109/lpt.2015.2402151.
Der volle Inhalt der QuelleLi, Li‐Qiang, und Lloyd M. Davis. „Single photon avalanche diode for single molecule detection“. Review of Scientific Instruments 64, Nr. 6 (Juni 1993): 1524–29. http://dx.doi.org/10.1063/1.1144463.
Der volle Inhalt der QuelleDalla Mora, Alberto, Alberto Tosi, Simone Tisa und Franco Zappa. „Single-Photon Avalanche Diode Model for Circuit Simulations“. IEEE Photonics Technology Letters 19, Nr. 23 (Dezember 2007): 1922–24. http://dx.doi.org/10.1109/lpt.2007.908768.
Der volle Inhalt der QuelleLacaita, A., M. Ghioni und S. Cova. „Double epitaxy improves single-photon avalanche diode performance“. Electronics Letters 25, Nr. 13 (1989): 841. http://dx.doi.org/10.1049/el:19890567.
Der volle Inhalt der QuelleDissertationen zum Thema "Diode à avalanche à photon unique"
B??rub??, Beno??t-Louis. „Conception de matrices de diodes avalanche ?? photon unique sur circuits int??gr??s CMOS 3D“. Thèse, Universit?? de Sherbrooke, 2014. http://savoirs.usherbrooke.ca/handle/11143/92.
Der volle Inhalt der QuelleBérubé, Benoît-Louis. „Conception de matrices de diodes avalanche à photon unique sur circuits intégrés CMOS 3D“. Thèse, Université de Sherbrooke, 2014. http://savoirs.usherbrooke.ca/handle/11143/92.
Der volle Inhalt der QuelleSicre, Mathieu. „Study of the noise aging mechanisms in single-photon avalanche photodiode for time-of-flight imaging“. Electronic Thesis or Diss., Lyon, INSA, 2023. http://www.theses.fr/2023ISAL0104.
Der volle Inhalt der QuelleSingle-Photon Avalanche Diode (SPAD) are used for Time-of-Flight (ToF) sensors to determine distance from a target by measuring the travel time of an emitted pulsed signal. These photodetectors work by triggering an avalanche of charge carriers upon photon absorption, resulting in a substantial amplification which can be detected. However, they are subject to spurious triggering by parasitic generated charge carriers, quantified as Dark Count Rate (DCR), which can compromise the accuracy of the measured distance. Therefore, it is crucial to identify and eliminate the potential source of DCR. To tackle this issue, a simulation methodology has been implemented to assess the DCR. This is achieved by simulating the avalanche breakdown probability, integrated with the carrier generation rate from defects. The breakdown probability can be simulated either in a deterministically, based on electric-field streamlines, or stochastically, by means of drift-diffusion simulation of the random carrier path. This methodology allows for the identification of the potential sources of pre-stress DCR by comparing simulation results to experimental data over a wide range of voltage and temperature. To ensure the accuracy of distance range measurements over time, it is necessary to predict the DCR level under various operating conditions. The aforementioned simulation methodology is used to identify the potential sources of post-stress DCR by comparing simulation results to stress experiments that evaluate the principal stress factors, namely temperature, voltage and irradiance. Furthermore, a Monte-Carlo study has been conducted to examine the device-to-device variation along stress duration. For an accurate Hot-Carrier Degradation (HCD) kinetics model, it is essential to consider not only the carrier energy distribution function but also the distribution of Si−H bond dissociation energy distribution at the Si/SiO2 interface. The number of available hot carriers is estimated from the carrier current density according to the carrier energy distribution simulated by means of a full-band Monte-Carlo method. The impact-ionization dissociation probability is employed to model the defect creation process, which exhibits sub-linear time dependence due to the gradual exhaustion of defect precursors. Accurate distance ranging requires distinguishing the signal from ambient noise and the DCR floor, and ensuring the target’s accumulated photon signal dominates over other random noise sources. An analytical formula allows to estimate the maximum distance ranging using the maximum signal strength, ambient noise level, and confidence levels. The impact of DCR can be estimated by considering the target’s reflectance and the ambient light conditions. In a nutshell, this work makes use of a in-depth characterization and simulation methodology to predict DCR in SPAD devices along stress duration, thereby allowing the assessment of its impact on distance range measurements
Panglosse, Aymeric. „Modélisation pour la simulation et la prédiction des performances des photodiodes à avalanche en mode Geiger pour Lidars spatiaux“. Thesis, Toulouse, ISAE, 2019. http://www.theses.fr/2019ESAE0046.
Der volle Inhalt der QuelleThis work focuses on modelling for simulation and prediction purposes ofCMOS SPADs performance parameters used in spaceborne Lidars. The innovative side ofthis work lies in a new methodology based on physical models for semiconductor devices,measurements performed on the targeted CMOS process and commercial simulation tools topredict CMOS SPADs performances. This method allows to get as close as possible to theprocess reality and to improve predictions. A set of SPAD has been designed and fabricated,and is used for measurements and model validation. SPAD design has been done with respectto CNES and Airbus Defence Space Lidar specification, in order to produce devices that willimprove our knowledge in terms of understanding of the involved physical mechanisms, SPADsdesign and test method, for a possible integration within their future spaceborne Lidars
Rumbley, Sarah (Sarah E. ). „Photon-efficient computational imaging with single-photon avalanche diode (SPAD) arrays“. Thesis, Massachusetts Institute of Technology, 2015. http://hdl.handle.net/1721.1/106005.
Der volle Inhalt der QuelleThis electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.
Cataloged from student-submitted PDF version of thesis.
Includes bibliographical references (pages 77-78).
Single-photon avalanche diodes (SPADs) are highly sensitive photodetectors that enable LIDAR imaging at extremely low photon flux levels. While conventional image formation methods require hundreds or thousands of photon detections per pixel to suppress noise, a recent computational approach achieves comparable results when forming reflectivity and depth images from on the order of 1 photon detection per pixel. This method uses the statistics underlying photon detections, along with the assumption that depth and reflectivity are spatially correlated in natural scenes, to perform noise censoring and regularized maximum-likelihood estimation. We expand on this research by adapting the method for use with SPAD arrays, accounting for the spatial non-uniformity of imaging parameters and the effects of crosstalk. We develop statistical models that incorporate these non-idealities, and present a statistical method for censoring crosstalk detections. We show results that demonstrate the performance of our method on simulated data with a range of imaging parameters.
by Sarah Rumbley.
M. Eng.
Neri, Lorenzo. „Time Resolved Single Photon Imaging Device with Single Photon Avalanche Diode“. Thesis, Università degli Studi di Catania, 2011. http://hdl.handle.net/10761/183.
Der volle Inhalt der QuelleAbbiamo studiato un nuovo sensore ottico caratterizzato da prestazioni che estenderanno le funzionalita' di molte nuove tecniche di indagine fisica. Il nostro dispositivo si basa su una matrice bidimensionale di Single Photon Avalanche Diode (SPAD), in grado di fornire il tempo di arrivo di ogni singolo fotone con una precisione del decimo di nanosecondo. Il nostro apparato e' in grado di acquisire là ¢ arrivo dei fotoni con continuita', senza interruzioni dovute al processo di lettura, ed e' inoltre resistente a fonti di luce eccessiva che costituiscono una limitazione per i normali dispositivi a singolo fotone. La soluzione proposta costituisce un passo in avanti per tutte le analisi basate sulla correlazione temporale a singolo fotone, come la Fluorescence Lifetime Imaging Microscopy, Dynamic Light Scattering, 3D Camera, Particle Imaging Velocimetry e Adaptive Optics. Grazie allo studio delle caratteristiche elettriche del singolo SPAD e' stato possibile individuare varie strategie di lettura. Il modello elettrico sviluppato e' stato inoltre utilizzato per simulare diverse configurazioni elettriche della matrici bidimensionali di sensori. Abbiamo studiato le caratteristiche funzionali del singolo SPAD ponendo l'attenzione sui fenomeni che alterano la linearita' di ri-sposta, siamo stati cosi' in grado di estendere di quattro ordini di grandezza il suo intervallo di utilizzo, e di utilizzare la saturazione come una funzione di compressione dei dati prodotti dal sensore. Le equazioni presentate estendono la correzione degli effetti del tempo morto, gia' presenti in letteratura, dallà ¢ analisi del caso stazionario a quello delle sorgenti variabili nel tempo, e sono inoltre estendibili a qualunque configurazione di tempo morto. La produzione di un prototipo funzionante ha compreso inoltre la realizzazione dell'elettronica di acquisizione, dell'algoritmo di calibrazione del sensore e di ricostruzione delle immagini. Il dispositivo e' stato testato realizzando diversi esperimenti, che hanno permesso di valutare le caratteristiche e i limiti delle soluzioni tecnologiche adottate.
Fisher, Edward Michael Dennis. „Parallel reconfigurable single photon avalanche diode array for optical communications“. Thesis, University of Edinburgh, 2015. http://hdl.handle.net/1842/11690.
Der volle Inhalt der QuelleWebster, Eric Alexander Garner. „Single-Photon Avalanche Diode theory, simulation, and high performance CMOS integration“. Thesis, University of Edinburgh, 2013. http://hdl.handle.net/1842/17987.
Der volle Inhalt der QuelleChitnis, Danial. „Single photon avalanche diodes for optical communications“. Thesis, University of Oxford, 2013. http://ora.ox.ac.uk/objects/uuid:5fd582dd-8167-4fe4-88f8-871ba905ade1.
Der volle Inhalt der QuelleDevita, Marie. „Mesure et dangerosité des métaux nobles pour les photodétecteurs à avalanche à photon unique“. Thesis, Strasbourg, 2016. http://www.theses.fr/2016STRAD029/document.
Der volle Inhalt der QuelleNoble metals (Au, Ag, Pt, Ir, Pd and Ru) are used for the fabrication of microelectronics devices or can be brought by manufacturing tools (alloy components for example). It is well known that these impurities are detrimental to the efficiency of the devices. This implies a real and present need for control of their introduction in clean rooms to diagnose as soon as possible a contamination. Yet, there are no industrial technique for their follow-up at levels about 5.109 at.cm-2 - ITRS recommendations. The relevance of these recommendations according to the electronic device (SPAD in particular) could be questioned. At first, this study consisted in developing a physicochemical technique for the analysis of noble metals on Si wafers by VPD-DC-ICPMS. Then, their dangerousness towards tools and devices was established according to their behavior in temperature and the DCR generated on SPAD devices
Buchteile zum Thema "Diode à avalanche à photon unique"
Davis, Lloyd M., und Li-Qiang Li. „Ultrasensitive Sub-Nanosecond Time-Gated Detection Using a Single Photon Avalanche Diode“. In Applications of Photonic Technology, 483–88. Boston, MA: Springer US, 1995. http://dx.doi.org/10.1007/978-1-4757-9247-8_92.
Der volle Inhalt der QuelleNiclass, Cristiano, Maximilian Sergio und Edoardo Charbon. „A Single Photon Avalanche Diode Array Fabricated in Deep-Submicron CMOS Technology“. In Design, Automation, and Test in Europe, 401–13. Dordrecht: Springer Netherlands, 2008. http://dx.doi.org/10.1007/978-1-4020-6488-3_29.
Der volle Inhalt der QuelleChu, Tong, Guilan Feng, Tianqi Zhao und Chunlan Lin. „Research Progress of Single Photon Avalanche Diode with Low Dark Count Rate“. In Lecture Notes in Electrical Engineering, 1–9. Singapore: Springer Singapore, 2021. http://dx.doi.org/10.1007/978-981-33-4110-4_1.
Der volle Inhalt der QuelleZheng, Jiyuan, Shaoliang Yu, Jiamin Wu, Yuyan Wang, Chenchen Deng und Zhu Lin. „A Novel In-Sensor Computing Architecture Based on Single Photon Avalanche Diode and Dynamic Memristor“. In Artificial Intelligence, 489–500. Cham: Springer Nature Switzerland, 2022. http://dx.doi.org/10.1007/978-3-031-20503-3_39.
Der volle Inhalt der QuelleDurini, Daniel, Uwe Paschen, Werner Brockherde und Bedrich J. Hosticka. „Silicon based single-photon avalanche diode technology for low-light and high-speed applications“. In Photodetectors, 37–71. Elsevier, 2023. http://dx.doi.org/10.1016/b978-0-08-102795-0.00002-5.
Der volle Inhalt der QuelleDurini, Daniel, Uwe Paschen, Alexander Schwinger und Andreas Spickermann. „Silicon based single-photon avalanche diode (SPAD) technology for low-light and high-speed applications“. In Photodetectors, 345–71. Elsevier, 2016. http://dx.doi.org/10.1016/b978-1-78242-445-1.00011-7.
Der volle Inhalt der QuelleKonferenzberichte zum Thema "Diode à avalanche à photon unique"
Louis, Thomas A. „Investigation of Picosecond Time-Resolved Photoluminescence in Gallium Arsenide with 3-μm Spatial Resolution“. In Picosecond Electronics and Optoelectronics. Washington, D.C.: Optica Publishing Group, 1989. http://dx.doi.org/10.1364/peo.1989.hsmt39.
Der volle Inhalt der QuelleZappa, Franco, Simone Tisa, Sergio Cova, Piera Maccagnani, Domenico Bonaccini Calia, Giovanni Bonanno, Massimiliano Belluso, Roberto Saletti und Roberto Roncella. „Pushing technologies: single-photon avalanche diode arrays“. In SPIE Astronomical Telescopes + Instrumentation. SPIE, 2004. http://dx.doi.org/10.1117/12.552940.
Der volle Inhalt der QuelleZang, Kai, Xun Ding, Xiao Jiang, Yijie Huo, Matthew Morea, Xiaochi Chen, Ching-Ying Lu et al. „Surface textured silicon single-photon avalanche diode“. In CLEO: Science and Innovations. Washington, D.C.: OSA, 2017. http://dx.doi.org/10.1364/cleo_si.2017.sm3k.2.
Der volle Inhalt der QuelleHuang, Dong, Rong-xia Zhu, Si-yang Liu, Wei-feng Sun, Jin Wu und De-jun Ma. „SPICE modeling for single photon avalanche diode“. In ISPDI 2013 - Fifth International Symposium on Photoelectronic Detection and Imaging, herausgegeben von Jun Ohta, Nanjian Wu und Binqiao Li. SPIE, 2013. http://dx.doi.org/10.1117/12.2032040.
Der volle Inhalt der QuelleHan, Song, Jian Zhang und Jie Song. „SSK Modulation with Single Photon Avalanche Diode“. In 2016 4th International Conference on Machinery, Materials and Information Technology Applications. Paris, France: Atlantis Press, 2016. http://dx.doi.org/10.2991/icmmita-16.2016.34.
Der volle Inhalt der QuelleNiclass, Cristiano, Marek Gersbach, Robert Henderson, Lindsay Grant und Edoardo Charbon. „A 130-nm CMOS single-photon avalanche diode“. In Optics East 2007, herausgegeben von Joachim Piprek und Jian J. Wang. SPIE, 2007. http://dx.doi.org/10.1117/12.728878.
Der volle Inhalt der QuelleRech, Ivan, Angelo Gulinatti, Franco Zappa, Massimo Ghioni und Sergio Cova. „High-performance silicon single-photon avalanche diode array“. In SPIE Defense, Security, and Sensing, herausgegeben von Mark A. Itzler und Joe C. Campbell. SPIE, 2009. http://dx.doi.org/10.1117/12.818516.
Der volle Inhalt der QuelleScandiuzzo, M., D. Stoppa, A. Simoni, L. Pancheri und G. F. Dalla Betta. „CMOS SINGLE PHOTON AVALANCHE DIODE FOR IMAGING APPLICATIONS“. In Proceedings of the 11th Italian Conference. WORLD SCIENTIFIC, 2008. http://dx.doi.org/10.1142/9789812793393_0046.
Der volle Inhalt der QuelleDhouib, Hatem, Amel Neifar, Abdessattar Bouzid und Mohamed Masmoudi. „Study of a Single-Photon Avalanche Diode Models“. In 2020 IEEE International Conference on Design & Test of Integrated Micro & Nano-Systems (DTS). IEEE, 2020. http://dx.doi.org/10.1109/dts48731.2020.9196074.
Der volle Inhalt der QuelleRink, S., V. Quenette, J. R. Manouvrier, A. Juge, G. Gouget, D. Rideau, R. A. Bianchi et al. „A self-sustaining Single Photon Avalanche Diode Model“. In ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC). IEEE, 2022. http://dx.doi.org/10.1109/essderc55479.2022.9947120.
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