Auswahl der wissenschaftlichen Literatur zum Thema „Bipolar model“
Geben Sie eine Quelle nach APA, MLA, Chicago, Harvard und anderen Zitierweisen an
Inhaltsverzeichnis
Machen Sie sich mit den Listen der aktuellen Artikel, Bücher, Dissertationen, Berichten und anderer wissenschaftlichen Quellen zum Thema "Bipolar model" bekannt.
Neben jedem Werk im Literaturverzeichnis ist die Option "Zur Bibliographie hinzufügen" verfügbar. Nutzen Sie sie, wird Ihre bibliographische Angabe des gewählten Werkes nach der nötigen Zitierweise (APA, MLA, Harvard, Chicago, Vancouver usw.) automatisch gestaltet.
Sie können auch den vollen Text der wissenschaftlichen Publikation im PDF-Format herunterladen und eine Online-Annotation der Arbeit lesen, wenn die relevanten Parameter in den Metadaten verfügbar sind.
Zeitschriftenartikel zum Thema "Bipolar model"
CHEN, Jun-Liang, Chang-Chun WANG und Chao CHEN. „Extended Bipolar Argumentation Model“. Journal of Software 23, Nr. 6 (29.08.2012): 1444–57. http://dx.doi.org/10.3724/sp.j.1001.2012.04067.
Der volle Inhalt der QuelleSulastri, Heni, Asifa Asri und Azrul Azwar. „Analogi Mekanik Model Gangguan Jiwa Bipolar“. PRISMA FISIKA 9, Nr. 1 (12.04.2021): 30. http://dx.doi.org/10.26418/pf.v9i1.45235.
Der volle Inhalt der QuelleGranstrom, Kjell, und Dan Stiwne. „A Bipolar Model of Groupthink“. Small Group Research 29, Nr. 1 (Februar 1998): 32–56. http://dx.doi.org/10.1177/1046496498291002.
Der volle Inhalt der QuelleMoradzadeh, Arash, Michael Joel Brenner, Elizabeth Whitlock, Janina Paula Delpilar Luciano, Terence Michael Myckatyn, Hunter Daniel, Alice Tong und Susan E. Mackinnon. „R416 – Bipolar Cautery: Sunderland Third Degree Nerve Injury Model“. Otolaryngology–Head and Neck Surgery 139, Nr. 2_suppl (August 2008): P182—P183. http://dx.doi.org/10.1016/j.otohns.2008.05.570.
Der volle Inhalt der QuelleSaputra, Eko, Iwan Budiwan Anwar, Rifky Ismail, J. Jamari und Emile van der Heide. „Study of Unipolar and Bipolar Hip Prostheses Using Finite Element Simulation: Contact Stress Analysis“. Key Engineering Materials 739 (Juni 2017): 96–102. http://dx.doi.org/10.4028/www.scientific.net/kem.739.96.
Der volle Inhalt der QuelleFilipowicz, Katarzyna, Tomasz Misiak und Tomasz Tokarski. „Bipolar growth model with investment flows“. Economics and Business Review 2 (16), Nr. 3 (30.09.2016): 32–56. http://dx.doi.org/10.18559/ebr.2016.3.4.
Der volle Inhalt der QuelleNajm, F. „VBIC95: an improved bipolar transistor model“. IEEE Circuits and Devices Magazine 12, Nr. 2 (März 1996): 11–15. http://dx.doi.org/10.1109/101.485907.
Der volle Inhalt der QuelleChen, Xiu Qing, und Li Chen. „The bipolar quantum drift-diffusion model“. Acta Mathematica Sinica, English Series 25, Nr. 4 (25.03.2009): 617–38. http://dx.doi.org/10.1007/s10114-009-7171-2.
Der volle Inhalt der QuelleLi, Zhi-Yun, und Frank H. Shu. „A Quantitative Model for Bipolar Molecular Outflows“. International Astronomical Union Colloquium 163 (1997): 757. http://dx.doi.org/10.1017/s0252921100043815.
Der volle Inhalt der QuelleAgustin Widyowati, Katmini und Predito Prihantoro. „Application the Cognitive-Behavioral Model of Relapse in Preventing Bipolar Relapse at RSI. Madinah Tulungagung“. Journal Of Nursing Practice 7, Nr. 2 (29.04.2024): 241–51. http://dx.doi.org/10.30994/jnp.v7i2.392.
Der volle Inhalt der QuelleDissertationen zum Thema "Bipolar model"
Atkinson, Juan Pablo. „Cost model for bipolar plate manufacture“. Thesis, Stellenbosch : Stellenbosch University, 2012. http://hdl.handle.net/10019.1/71625.
Der volle Inhalt der QuelleENGLISH ABSTRACT: This thesis gives a cost model for the manufacture of bipolar plates in South Africa. The methods for the manufacture considered are machining, using a micro-milling machine, and compression moulding. The focus of this thesis is on compression moulding. Details of the work done towards developing and validating the models are described, and then the cost models are discussed in detail. The results of the analysis done using the cost model is given with attention paid to the effect of changing design parameters, such as channel size and flow field area, and of the cost of production for both methods over various production volumes. The thesis concludes that compression moulding becomes the better option for production volumes greater than 324 bipolar plates, with a cost that eventually reaches close to R140 per plate for high enough production volumes (over 5000). The cost to produce 1000 plates using compression moulding is estimated at R294 per plate. An increase of the channel size gives a small reduction in the total cost, while the increase in cost with an increase in flow field area is large.
AFRIKAANSE OPSOMMING: Hierdie tesis gee 'n koste-model vir die vervaardiging van bipolêre plate in Suid- Afrika. Die vervaardigingsmetodes wat oorweeg word, is masjinering deur 'n mikro-freesmasjien en persvorming. Die fokus van hierdie tesis is op persvorming. Die besonderhede van die ontwikkeling en validering van die modelle word beskryf, en daarna word die modelle in besonderhede beskryf. Die resultate van 'n analise wat met die koste-model gedoen is, word daarna gegee, met die oorweging van die verandering van ontwerp-parameters soos die vloeikanaalgrootte en vloeiveld-area, en van die koste van vervaardiging vir beide metodes vir verskeie produksievolumes. Die tesis kom tot die slotsom dat persvorming die voorkeurproses is vir produksievolumes groter as 324 bipolêre plate, met 'n koste wat tot naastenby R140 per plaat daal vir hoë produksievolumes (meer as 5000). Die koste om 1000 plate met persvorming te maak, word op R294 per plaat beraam. 'n Toename in kanaalgrootte gee 'n klein vermindering in die totale koste, terwyl die toename in koste groot is wanneer die vloeiveld-area toeneem.
Lamontagne, Maurice. „Development of a statistical model for NPN bipolar transistor mismatch“. Link to electronic thesis, 2007. http://www.wpi.edu/Pubs/ETD/Available/etd-053007-105648/.
Der volle Inhalt der QuelleIyer, Indira G. „Implementation of bipolar transistor model in a waveform relaxation simulator“. Ohio : Ohio University, 1989. http://www.ohiolink.edu/etd/view.cgi?ohiou1182437646.
Der volle Inhalt der QuelleArreguit, Xavier. „Compatible lateral bipolar transistors in CMOS technology : model and applications /“. [S.l.] : [s.n.], 1989. http://library.epfl.ch/theses/?nr=817.
Der volle Inhalt der QuelleGhosh, Sudip. „Electronical model evaluation and development of compact model including aging for InP heterojunction bipolar transistors (HBTs)“. Thesis, Bordeaux 1, 2011. http://www.theses.fr/2011BOR14451/document.
Der volle Inhalt der QuelleModern InP Heterojunction Bipolar Transistors (HBT) technology has shown its efficiency for making large signal ICs working above 100 Gbits/s for Ethernet optical transport network. To full-fill this expectation, a good reliability has to be assured. Accelerated aging tests under thermal and electro-thermal stress conditions are performed and analyzed with Sentaurus TCAD device simulation tools to achieve the physical aging laws. The physics based advanced bipolar compact model HICUM Level 2 is used for precise modeling of the devices before aging. The HICUM parameters are extracted to fit the intermediate characterizations during aging. The evolution of the model parameters is described with suitable equations to achieve a physics based compact electrical aging model. The aging laws and the parameter evolution equations with stress time are implemented in compact electrical aging model in Verilog-A languages which allows us to simulate the impact of device failure mechanisms on the circuit in operating conditions
Carroll, James M. „The psychometrics of a bipolar valence activation model of self-reported affect“. Thesis, National Library of Canada = Bibliothèque nationale du Canada, 2000. http://www.collectionscanada.ca/obj/s4/f2/dsk2/ftp03/NQ56520.pdf.
Der volle Inhalt der QuelleEssmann, Erich C. „A cost model for the manufacture of bipolar plates using micro milling“. Thesis, Stellenbosch : Stellenbosch University, 2012. http://hdl.handle.net/10019.1/20319.
Der volle Inhalt der QuelleENGLISH ABSTRACT: In a move towards cleaner and more sustainable energy systems, hydrogen as an energy carrier and hydrogen fuel cells as energy converters are receiving increasing global attention. Considering the vital role that platinum plays in the operation of hydrogen fuels cells, South Africa stands to gain enormously as the world’s leading platinum group metals supplier. Therefore, in order to benefit across the whole value chain, it is imperative to develop the capability to manufacture hydrogen fuel cell stacks locally. This project addresses this imperative, in part, by building a framework to evaluate the manufacturing performance of one of the more costly components of the hydrogen fuel cell stack. More specifically, this project builds a cost evaluation model (or cost model) for the manufacture of bipolar plates using micro milling. In essence, the model characterises manufacturing cost (and time) as a function of relevant inputs. The model endeavours to be flexible in accommodating relevant contributing cost drivers such as tool life and manufacturing time. Moreover, the model lays the groundwork, from a micro milling perspective, for a comparison of different manufacturing methods for bipolar plates. The approach taken in building the cost model is a fundamental one, owing to the lack of historical cost data for this particular process. As such, manufacturing knowledge and experimentation are used to build the cost model in a structured way. The process followed in building the cost model begins with the formulation of the cost components by reviewing relevant examples from literature. Thereafter, two main cost drivers are comprehensively addressed. Tool life is characterised experimentally as a function of cutting parameters and manufacturing time is characterised as a function of relevant inputs. The work is then synthesized into a coherent cost model. Following the completion of the cost model, analysis is done to find the near-optimal combination of machine cutting parameters. Further, analysis is done to quantify the sensitivity of manufacturing cost to design changes and production volumes. This attempts to demonstrate how typical managerial issues can be addressed using the cost model format. The value of this work must be seen in terms of its practical contribution. That is, its contribution to the development of the capability to manufacture hydrogen fuel cells locally. By understanding the effect of relevant input factors on manufacturing cost, ‘upstream’ design and development activities can be integrated with ‘downstream’ manufacturing activities. Therefore, this project supports the development of manufacturing capability by providing a mechanism to control cost throughout the process.
AFRIKAANSE OPSOMMING: In die soeke na skoner, meer volhoubare energie bronne word die fokus op waterstof, as energie draer, en waterstof brandstofselle, as energie omskakelaars, al meer verskerp. Deur die sleutelrol van platinum in die werking van waterstof brandstofselle in ag te neem, word Suid-Afrika, as die wêreld se grootste platinum verskaffer, in `n uitstekende posisie geplaas om voordeel te trek uit hierdie geleentheid. Om dus as land voordeel te trek uit die proses in geheel, is dit van kardinale belang om die vermoë te ontwikkel om waterstof brandstofsel stapels op eie bodem te vervaardig. Hierdie projek adresseer gedeeltelik hierdie noodsaaklikheid, deur `n raamwerk te bou wat die vervaardigingsoptrede van een van die meer duursame komponente van die waterstof brandstofsel stapel evalueer. Meer spesifiek, bou hierdie projek `n koste evaluerings model (of koste model) vir die vervaardiging van bipolêre plate deur die gebruik van mikro-masjienering. In wese kenmerk hierdie model vervaardigings kostes (en tyd) as `n funksie van relevante insette. Hierdie model poog om buigsaam te wees met die in ag neming van relevante bydraende kostedrywers soos buitelleeftyd en vervaardigingstyd. Daarbenewens lê hierdie model die grondwerk, vanuit `n mikro masjienerings oogpunt, vir die vergelyking van verskillende vervaardingings metodes vir bipolêre plate. Die benadering wat gevolg word in die bou van die koste model is fundamenteel as gevolg van die gebrek van historiese data vir hierdie spesifieke proses. As sodanig word vervaardigings kennis en eksperimentering gebruik om die koste model in `n gestruktueerde wyse te bou. Die proses gevolg in die bou van die koste model begin met die formulering van die koste komponente deur die hersiening van relevante voorbeelde vanuit die literatuur. Daarna word twee hoof koste drywers deeglik geadresseer. Buitelleeftyd word ekperimenteel gekenmerk as funksie van masjieneringsparameters en vervaardigingstyd word gekenmerk as `n funksie van relevante insette. Die werk word dan gesintetiseer in `n samehangende koste model. Wat volg op die voltooiing van die koste model is `n analise om die optimale kombinasie masjieneringsparameters te vind. Daaropvolgens word analises gedoen om die sensitiwiteit van vervaardigingskoste onderworpe aan ontwerpsveranderings en produksie volumes te kwantisfiseer. Dit poog om te demostreer hoe tipiese bestuursproblem geadresseer kan word deur die koste model formaat te gebruik. Die waarde van hierdie werk moet in die lig van die praktiese bydrae daarvan gesien word, menende, die bydrae tot die ontwikkeling van die vermoë om waterstof brandstofselle in Suid-Afrika te vervaardig. Deur die effek van relevante inset faktore op vervaardigingskoste te verstaan, kan ‘stroom-op’ ontwerp en ontwikkelings aktiwiteite geïntegreer word met ‘stroom-af’ vervaardigings aktiwiteite. Dus, hierdie projek ondersteun die ontwikkeling van vervaardigingsvermoëns deur `n meganisme te voorsien om kostes oor die omvang van die proses te beheer.
Linder, Martin. „DC Parameter Extraction and Modeling of Bipolar Transistors“. Doctoral thesis, KTH, Microelectronics and Information Technology, IMIT, 2001. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-3172.
Der volle Inhalt der QuelleStein, Félix. „SPICE Modeling of TeraHertz Heterojunction bipolar transistors“. Thesis, Bordeaux, 2014. http://www.theses.fr/2014BORD0281/document.
Der volle Inhalt der QuelleThe aim of BiCMOS technology is to combine two different process technologies intoa single chip, reducing the number of external components and optimizing power consumptionfor RF, analog and digital parts in one single package. Given the respectivestrengths of HBT and CMOS devices, especially high speed applications benefit fromadvanced BiCMOS processes, that integrate two different technologies.For analog mixed-signal RF and microwave circuitry, the push towards lower powerand higher speed imposes requirements and presents challenges not faced by digitalcircuit designs. Accurate compact device models, predicting device behaviour undera variety of bias as well as ambient temperatures, are crucial for the development oflarge scale circuits and create advanced designs with first-pass success.As technology advances, these models have to cover an increasing number of physicaleffects and model equations have to be continuously re-evaluated and adapted. Likewiseprocess scaling has to be verified and reflected by scaling laws, which are closelyrelated to device physics.This thesis examines the suitability of the model formulation for applicability to production-ready SiGe HBT processes. A derivation of the most recent model formulationimplemented in HICUM version L2.3x, is followed by simulation studies, whichconfirm their agreement with electrical characteristics of high-speed devices. Thefundamental geometry scaling laws, as implemented in the custom-developed modellibrary, are described in detail with a strong link to the specific device architecture.In order to correctly determine the respective model parameters, newly developed andexisting extraction routines have been exercised with recent HBT technology generationsand benchmarked by means of numerical device simulation, where applicable.Especially the extraction of extrinsic elements such as series resistances and parasiticcapacitances were improved along with the substrate network.The extraction steps and methods required to obtain a fully scalable model library wereexercised and presented using measured data from a recent industry-leading 55nmSiGe BiCMOS process, reaching switching speeds in excess of 300GHz. Finally theextracted model card was verified for the respective technology
Sarkar, Manju. „Lambda Bipolar Transistor (LBT) in Static Random Access Memory Cell“. Thesis, Indian Institute of Science, 1995. https://etd.iisc.ac.in/handle/2005/124.
Der volle Inhalt der QuelleBücher zum Thema "Bipolar model"
Alioto, Massimo, und Gaetano Palumbo. Model and Design of Bipolar and MOS Current-Mode Logic. Boston, MA: Springer US, 2005. http://dx.doi.org/10.1007/1-4020-2888-1.
Der volle Inhalt der Quelle1958-, Young L. Trevor, und Joffe Russell T. 1954-, Hrsg. Bipolar disorder: Biological models and their clinical application. New York: M. Dekker, 1997.
Den vollen Inhalt der Quelle findenÇilingiroğlu, Uğur. Systematic analysis of bipolar and MOS transistors. Boston: Artech House, 1993.
Den vollen Inhalt der Quelle findenSchröter, Michael. Compact hierarchical bipolar transistor modeling with hicum. Singapore: World Scientific, 2010.
Den vollen Inhalt der Quelle findenKuttner, Kenneth N. Beyond bipolar: A three-dimensional assessment of monetary frameworks. Wien: Oesterreichische Nationalbank, 2001.
Den vollen Inhalt der Quelle findenKuttner, Kenneth N. Beyond bipolar: A three-dimensional assessment of monetary frameworks. Wien: Oesterreichische Nationalbank, 2001.
Den vollen Inhalt der Quelle findenPhysical InP-based HBT models for ultimate digital circuit optimization. Konstanz: Hartung-Gorre, 2006.
Den vollen Inhalt der Quelle findenInc, AeroVironment, und United States. National Aeronautics and Space Administration., Hrsg. Development of a woven-grid quasi-bipolar battery: Phase I final report. [Washington, DC: National Aeronautics and Space Administration, 1998.
Den vollen Inhalt der Quelle findenD, Cressler John, Hrsg. Measurement and modeling of silicon heterostructure devices. Boca Raton, FL: CRC Press, 2008.
Den vollen Inhalt der Quelle findenP, Soubrié, Hrsg. Anxiety, depression, and mania. Basel: Karger, 1991.
Den vollen Inhalt der Quelle findenBuchteile zum Thema "Bipolar model"
Schröter, Michael, und Bertrand Ardouin. „The HiCuM Bipolar Transistor Model“. In Compact Modeling, 231–67. Dordrecht: Springer Netherlands, 2010. http://dx.doi.org/10.1007/978-90-481-8614-3_8.
Der volle Inhalt der QuelleDykas, Paweł, Tomasz Tokarski und Rafał Wisła. „Bipolar growth models with investment flows“. In The Solow Model of Economic Growth, 126–66. London: Routledge, 2022. http://dx.doi.org/10.4324/9781003323792-7.
Der volle Inhalt der QuelleLefebvre, Vladimir A. „A Boolean Model of Bipolar Choice“. In Algebra of Conscience, 165–73. Dordrecht: Springer Netherlands, 2001. http://dx.doi.org/10.1007/978-94-017-0691-9_21.
Der volle Inhalt der QuellePavuluri, Mani N., und Soujanya Bogarapu. „Brain Model for Pediatric Bipolar Disorder“. In Biological Child Psychiatry, 39–52. Basel: KARGER, 2008. http://dx.doi.org/10.1159/000118515.
Der volle Inhalt der QuellePost, Robert M. „The Kindling/Sensitization Model and Early Life Stress“. In Bipolar Disorder: From Neuroscience to Treatment, 255–75. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/7854_2020_172.
Der volle Inhalt der QuelleTzeng, Gwo-Hshiung. „Hybrid Bipolar MRDM Model For Business Analytics“. In New Concepts and Trends of Hybrid Multiple Criteria Decision Making, 289–308. New York : CRC Press, 2017.: CRC Press, 2017. http://dx.doi.org/10.1201/9781315166650-20.
Der volle Inhalt der QuelleCabrit, Sylvie, und Claude Bertout. „A Model of Molecular Emission in Bipolar Flows“. In Circumstellar Matter, 89–92. Dordrecht: Springer Netherlands, 1987. http://dx.doi.org/10.1007/978-94-009-3887-8_19.
Der volle Inhalt der QuelleSmith, Michael D. „A Model for Bipolar Sources in Molecular Clouds“. In Light on Dark Matter, 319–20. Dordrecht: Springer Netherlands, 1986. http://dx.doi.org/10.1007/978-94-009-4672-9_71.
Der volle Inhalt der QuelleReznik, D. „Generalised Drift-Diffusion Model of Bipolar Transport in Semiconductors“. In Simulation of Semiconductor Devices and Processes, 254–57. Vienna: Springer Vienna, 1995. http://dx.doi.org/10.1007/978-3-7091-6619-2_61.
Der volle Inhalt der QuelleTang, Yongchuan, und Jonathan Lawry. „Bipolar Semantic Cells: An Interval Model for Linguistic Labels“. In Lecture Notes in Computer Science, 60–71. Berlin, Heidelberg: Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-24918-1_9.
Der volle Inhalt der QuelleKonferenzberichte zum Thema "Bipolar model"
Doyen, L., X. Federspiel und D. Ney. „Improved Bipolar Electromigration Model“. In 2006 IEEE International Reliability Physics Symposium Proceedings. IEEE, 2006. http://dx.doi.org/10.1109/relphy.2006.251323.
Der volle Inhalt der QuelleLiang, Lin und Petrosky. „A dynamic thermo-feedback model for bipolar transistor“. In Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting BIPOL-93. IEEE, 1993. http://dx.doi.org/10.1109/bipol.1993.617508.
Der volle Inhalt der QuelleHorak, Michal. „Double heterojunction bipolar phototransistor model“. In Photonics, Devices, and Systems II, herausgegeben von Miroslav Hrabovsky, Dagmar Senderakova und Pavel Tomanek. SPIE, 2003. http://dx.doi.org/10.1117/12.498453.
Der volle Inhalt der QuelleAshton, James P., Stephen J. Moxim, Ashton D. Purcell, Patrick M. Lenahan und Jason T. Ryan. „Model for the Bipolar Amplification Effect“. In 2021 IEEE International Integrated Reliability Workshop (IIRW). IEEE, 2021. http://dx.doi.org/10.1109/iirw53245.2021.9635616.
Der volle Inhalt der QuelleNakagawa, A., S. Nakamura und T. Shinohe. „Rapid Convergence Bipolar-MOS Composite Device Model - Tonadder- And Its Application To Bipolar-Mode MOSFETs(IGBT)“. In [1987] NASECODE V: Fifth International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits. IEEE, 1987. http://dx.doi.org/10.1109/nascod.1987.721195.
Der volle Inhalt der Quelle„Bayesian Prognostic Model for Genomic Discovery in Bipolar Disorder“. In International Conference on Bioinformatics Models, Methods and Algorithms. SCITEPRESS - Science and and Technology Publications, 2014. http://dx.doi.org/10.5220/0004642100910098.
Der volle Inhalt der QuelleLIOTTA, S. F., und G. MASCALI. „A HYDRODYNAMICAL MODEL FOR SILICON BIPOLAR DEVICES“. In Proceedings of the 13th Conference on WASCOM 2005. WORLD SCIENTIFIC, 2006. http://dx.doi.org/10.1142/9789812773616_0044.
Der volle Inhalt der QuelleNursuprianah, Indah, Nursanti Anggriani, Nuning Nuraini und Yudi Rosandi. „Dynamic analysis of bipolar disorder mathematical model“. In THE 7TH INTERNATIONAL CONFERENCE ON BASIC SCIENCES 2021 (ICBS 2021). AIP Publishing, 2023. http://dx.doi.org/10.1063/5.0112000.
Der volle Inhalt der QuelleScrobohaci, Joonwoo Nam und Ting-wei Tang. „A non-local hydrodynamic model for impact ionization in submicron silicon BJT's“. In Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting BIPOL-93. IEEE, 1993. http://dx.doi.org/10.1109/bipol.1993.617460.
Der volle Inhalt der QuelleReaz Shaheed und Maziar. „A plasma-induced bandgap renormalization model for accurate simulation of advanced bipolar transistors“. In Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting BIPOL-93. IEEE, 1993. http://dx.doi.org/10.1109/bipol.1993.617461.
Der volle Inhalt der QuelleBerichte der Organisationen zum Thema "Bipolar model"
Zimmerman, T. An approximate HSPICE model for orbit low noise analog bipolar NPN transistors. Office of Scientific and Technical Information (OSTI), Juli 1991. http://dx.doi.org/10.2172/5475545.
Der volle Inhalt der QuelleOvrebo, Gregory K. Simulation of Heating of an Oil-Cooled Insulated Gate Bipolar Transistors Converter Model. Fort Belvoir, VA: Defense Technical Information Center, Oktober 2004. http://dx.doi.org/10.21236/ada428067.
Der volle Inhalt der QuelleLiou, Chorng-Lii. An improved formulation of the temperature dependence of the Gummel-Poon bipolar transistor model equations. Portland State University Library, Januar 2000. http://dx.doi.org/10.15760/etd.6217.
Der volle Inhalt der QuelleWilk, Kacper, Ewelina Kowalewska, Maria Załuska und Michał Lew-Starowicz. The comparison of variuos models of community psychiatry – a systematic review. INPLASY - International Platform of Registered Systematic Review and Meta-analysis Protocols, Mai 2023. http://dx.doi.org/10.37766/inplasy2023.5.0094.
Der volle Inhalt der QuelleWampler, William R., und Samuel Maxwell Myers. Carrier tunneling in models of irradiated heterojunction bipolar transistors. Office of Scientific and Technical Information (OSTI), August 2014. http://dx.doi.org/10.2172/1171564.
Der volle Inhalt der QuelleCampbell, Phillip, und Steven Wix. Total dose and dose rate models for bipolar transistors in circuit simulation. Office of Scientific and Technical Information (OSTI), Mai 2013. http://dx.doi.org/10.2172/1088097.
Der volle Inhalt der Quelle