Auswahl der wissenschaftlichen Literatur zum Thema „Atomic Layer Etching“
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Zeitschriftenartikel zum Thema "Atomic Layer Etching"
AOYAGI, Yoshinobu, und Takashi MEGURO. „Atomic Layer Etching.“ Nihon Kessho Gakkaishi 33, Nr. 3 (1991): 169–74. http://dx.doi.org/10.5940/jcrsj.33.169.
Der volle Inhalt der QuelleEliceiri, Matthew, Yoonsoo Rho, Runxuan Li und Costas P. Grigoropoulos. „Pulsed laser induced atomic layer etching of silicon“. Journal of Vacuum Science & Technology A 41, Nr. 2 (März 2023): 022602. http://dx.doi.org/10.1116/6.0002399.
Der volle Inhalt der QuelleHatch, Kevin A., Daniel C. Messina und Robert J. Nemanich. „Plasma enhanced atomic layer deposition and atomic layer etching of gallium oxide using trimethylgallium“. Journal of Vacuum Science & Technology A 40, Nr. 4 (Juli 2022): 042603. http://dx.doi.org/10.1116/6.0001871.
Der volle Inhalt der QuelleOh, Chang-Kwon, Sang-Duk Park und Geun-Young Yeom. „Atomic Layer Etching of Silicon Using a Ar Neutral Beam of Low Energy“. Korean Journal of Materials Research 16, Nr. 4 (27.04.2006): 213–17. http://dx.doi.org/10.3740/mrsk.2006.16.4.213.
Der volle Inhalt der QuelleGeorge, Steven M. „(Tutorial) Thermal Atomic Layer Etching“. ECS Meeting Abstracts MA2021-02, Nr. 29 (19.10.2021): 847. http://dx.doi.org/10.1149/ma2021-0229847mtgabs.
Der volle Inhalt der QuelleIkeda, Keiji, Shigeru Imai und Masakiyo Matsumura. „Atomic layer etching of germanium“. Applied Surface Science 112 (März 1997): 87–91. http://dx.doi.org/10.1016/s0169-4332(96)00995-6.
Der volle Inhalt der QuelleNieminen, Heta-Elisa, Mykhailo Chundak, Mikko J. Heikkilä, Paloma Ruiz Kärkkäinen, Marko Vehkamäki, Matti Putkonen und Mikko Ritala. „In vacuo cluster tool for studying reaction mechanisms in atomic layer deposition and atomic layer etching processes“. Journal of Vacuum Science & Technology A 41, Nr. 2 (März 2023): 022401. http://dx.doi.org/10.1116/6.0002312.
Der volle Inhalt der QuelleYao, Yong Zhao, Yukari Ishikawa, Yoshihiro Sugawara und Koji Sato. „Removal of Mechanical-Polishing-Induced Surface Damages on 4H-SiC Wafers by Using Chemical Etching with Molten KCl+KOH“. Materials Science Forum 778-780 (Februar 2014): 746–49. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.746.
Der volle Inhalt der QuelleReif, Johanna, Martin Knaut, Sebastian Killge, Matthias Albert, Thomas Mikolajick und Johann W. Bartha. „In situ studies on atomic layer etching of aluminum oxide using sequential reactions with trimethylaluminum and hydrogen fluoride“. Journal of Vacuum Science & Technology A 40, Nr. 3 (Mai 2022): 032602. http://dx.doi.org/10.1116/6.0001630.
Der volle Inhalt der QuelleHirano, Tomoki, Kenya Nishio, Takashi Fukatani, Suguru Saito, Yoshiya Hagimoto und Hayato Iwamoto. „Characterization of Wet Chemical Atomic Layer Etching of InGaAs“. Solid State Phenomena 314 (Februar 2021): 95–98. http://dx.doi.org/10.4028/www.scientific.net/ssp.314.95.
Der volle Inhalt der QuelleDissertationen zum Thema "Atomic Layer Etching"
Gong, Yukun. „Electrochemical Atomic Layer Etching of Copper and Ruthenium“. Case Western Reserve University School of Graduate Studies / OhioLINK, 2021. http://rave.ohiolink.edu/etdc/view?acc_num=case1625783128128316.
Der volle Inhalt der QuelleDallorto, Stefano [Verfasser], Ivo W. [Akademischer Betreuer] Rangelow, Adam Gutachter] Schwartzberg und Steffen [Gutachter] [Strehle. „Enabling control of matter at the atomic level: atomic layer deposition and fluorocarbon-based atomic layer etching / Stefano Dallorto ; Gutachter: Adam Schwartzberg, Steffen Strehle ; Betreuer: Ivo W. Rangelow“. Ilmenau : TU Ilmenau, 2020. http://nbn-resolving.de/urn:nbn:de:gbv:ilm1-2019000480.
Der volle Inhalt der QuelleDallorto, Stefano [Verfasser], Ivo W. [Akademischer Betreuer] Rangelow, Adam [Gutachter] Schwartzberg und Steffen [Gutachter] Strehle. „Enabling control of matter at the atomic level: atomic layer deposition and fluorocarbon-based atomic layer etching / Stefano Dallorto ; Gutachter: Adam Schwartzberg, Steffen Strehle ; Betreuer: Ivo W. Rangelow“. Ilmenau : TU Ilmenau, 2020. http://d-nb.info/120306683X/34.
Der volle Inhalt der QuellePezeril, Maxime. „Développement d'un procédé de gravure par plasma pour les transistors de puissance à base de matériaux III-V“. Electronic Thesis or Diss., Université Grenoble Alpes, 2024. http://www.theses.fr/2024GRALT049.
Der volle Inhalt der QuelleIn power electronics industry, Gallium Nitride (GaN) is a promising material by his properties, especially the wide gap and high voltage working. The devices, called HEMT (High Electron Mobility Transistors), are based on AlGaN/GaN heterostructure property : the Two-dimensional electron gas (2DEG). The manufacturing of power devices inlcudes several critical steps when the GaN is degraded. This thesis works focused on the plasma induced damages and present several processes to reduce these degradations.We first studied the impact of mask used for patterning with a Cl-based Reactive Ion Etching (RIE) process followed by Atomic Layer Etching (ALE). XPS, AFM and SEM gate profile analysis highlighted degradation mechanisms involving the masks. The comparison between resist mask and dielectric masks, called hard masks, have shown 2 types of passivation. The first one is a polymer deposition on the sidewalls of the gate during resist mask etching. The second one is thin layer deposition on the sidewalls and the bottom of the gate during silicon oxide mask etching. This passivation, slowing the ALE down, has been avoided by ion bombardment energy modification.Considering the first results, we tried several alternative plasma etching processes. The nature of the species used has been clearly identified as a strong factor of degradation, especially HBr. Furthermore, the modification of the bias voltage for the Cl-based process confirms that ion bombardment energy is the main factor of GaN degradation. The use of bias-pulsed processes shows promising results.Finally, the last works focused on MOS (GaN/Al2O3/Ni/Au capacity performances analysis following plasma etching conditions. The Capacity-Voltage C(V) characterizations put emphasis on the add of clean steps between GaN plasma etching and alumine Atomic Layer Deposition (ALD) : in situ O2 dry strip (without bias voltage) and HCL wet strip before furnace loading
Fecko, Peter. „Mikrostruktury mimikující povrch tlapky gekona“. Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2019. http://www.nusl.cz/ntk/nusl-400722.
Der volle Inhalt der QuelleChen, Kuan-Chao, und 陳冠超. „Device Fabrications of 2D Material Transistors: Material Growth and Atomic Layer Etching“. Thesis, 2018. http://ndltd.ncl.edu.tw/handle/3pz445.
Der volle Inhalt der Quelle國立臺灣大學
電子工程學研究所
106
In this thesis, we have demonstrated that by using the growth technique of sulfurizing pre-deposited transition metals, large-area transition metal disulfides such as MoS2 and WS2 can be grown on sapphire substrates. Good layer number controllability can be achieved for MoS2 down to single layer by controlling the Mo sputtering times. With sequential transition metal deposition and following sulfurization procedures, a WS2/MoS2/WS2 double hetero-structure can be established in 3-layer 2D crystal thickness. By using the low-power oxygen plasma treatment, a significant increase in field-effect mobility in the fabricated MoS2 transistors was observed. By using the same low-power oxygen plasma treatment, atomic layer etching of MoS2 can be achieved. After the low-power oxygen plasma treatment, the topmost MoS2 layer of multi-layer MoS2 film will be fully oxidized. The weaker adhesion of Mo oxides with MoS2 surfaces would lead to the de-attachment of the topmost oxidized MoS2 layer from the underlying MoS2 films. With the re-sulfurization procedure after the etching process, the partially oxidized MoS2 film remained on the substrate can be recovered back to a complete MoS2 film. Both optical and electrical characteristics of the MoS2 films can be maintained after the ALE procedure. By repeating the same ALE procedures, the equivalent selective etching of TMD hetero-structures is demonstrated.
Chu, Tung-Wei, und 屈統威. „The Growth of Large-Area Transition Metal Dichalcogenide Hetero-Structures and the Development of the Atomic Layer Etching“. Thesis, 2017. http://ndltd.ncl.edu.tw/handle/75bnb4.
Der volle Inhalt der Quelle國立臺灣大學
光電工程學研究所
105
In this thesis, we have demonstrated that large-area molybdenum disulfide (MoS2) can be prepared by sulfurizing the pre-deposited transition metal films. Good layer number controllability up to 10 layers of the MoS2 film is also achieved by controlling the sputtering times of the pre-deposited transition metal films. For the sample with thicker Mo films, although MoS2 films with the layer number larger than 10 can be obtained, clusters of multi-layer 2D crystals covering Mo oxides are obtained for the sample. The results suggest that two growth mechanisms of planar MoS2 formation and Mo oxide segregation would take place simultaneously during the sulfurization procedure. After sequential transition metal deposition and sulfurization procedures of Mo and tungsten (W), MoS2/WS2 2D crystal hetero-structures can be established. After transferring the hetero-structure film to a 300 nm SiO2/Si substrate, a bottom-gate transistor with enhanced field-effect mobility is obtained. The results have revealed that the establishment of different hetero-structures is a promising approach to overcome the limit of individual 2D crystals and still maintain their advantage. The atomic layer etchings of MoS2 and WS2 are demonstrated in this paper. By repeated oxygen plasma etchings and a final re-sulfurization procedure, multi-layer WS2 can be selectively etched off from the WS2/MoS2 hetero-structure. A WS2/MoS2 hetero-structure transistor is fabricated with source/drain electrodes contacted directly to the MoS2 channel by using the repeated atomic layer etching technique. The results have revealed that the equivalent selective etching effect for two-dimensional crystal hetero-structures can be achieved by repeating the atomic layer etching procedure, which is an important step for the device fabrication of 2D crystal hetero-structures.
Bücher zum Thema "Atomic Layer Etching"
Lill, Thorsten. Atomic Layer Processing: Semiconductor Dry Etching Technology. Wiley & Sons, Limited, John, 2021.
Den vollen Inhalt der Quelle findenLill, Thorsten. Atomic Layer Processing: Semiconductor Dry Etching Technology. Wiley & Sons, Incorporated, John, 2021.
Den vollen Inhalt der Quelle findenLill, Thorsten. Atomic Layer Processing: Semiconductor Dry Etching Technology. Wiley & Sons, Incorporated, John, 2021.
Den vollen Inhalt der Quelle findenLill, Thorsten. Atomic Layer Processing: Semiconductor Dry Etching Technology. Wiley & Sons, Incorporated, John, 2021.
Den vollen Inhalt der Quelle findenBuchteile zum Thema "Atomic Layer Etching"
Hossain, Samiha, Oktay H. Gokce und N. M. Ravindra. „Atomic Layer Deposition and Atomic Layer Etching—An Overview of Selective Processes“. In TMS 2021 150th Annual Meeting & Exhibition Supplemental Proceedings, 219–29. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-65261-6_20.
Der volle Inhalt der QuelleYue, Zhihao, Honglie Shen, Ye Jiang und Yahui Teng. „Antireflective Silicon Nanostructures Fabricated by Cheap Chemical Etchant and Coated by Atomic Layer Deposited Al2O3Layer“. In EPD Congress 2013, 243–50. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2013. http://dx.doi.org/10.1002/9781118658468.ch28.
Der volle Inhalt der Quelle„Atomic Layer Etching“. In Encyclopedia of Plasma Technology, 128–32. CRC Press, 2016. http://dx.doi.org/10.1081/e-eplt-120049598.
Der volle Inhalt der Quelle„Atomic Layer Etching: Directional“. In Encyclopedia of Plasma Technology, 133–42. CRC Press, 2016. http://dx.doi.org/10.1081/e-eplt-120053939.
Der volle Inhalt der QuelleBihun, Roman, und Bohdan Koman. „NANOSCALE METAL FILM ELECTRONICS“. In Traditions and new scientific strategies in the context of global transformation of society. Publishing House “Baltija Publishing”, 2024. http://dx.doi.org/10.30525/978-9934-26-406-1-1.
Der volle Inhalt der QuelleKonferenzberichte zum Thema "Atomic Layer Etching"
Agarwal, A., und M. J. Kushner. „Plasma atomic layer etching“. In The 33rd IEEE International Conference on Plasma Science, 2006. ICOPS 2006. IEEE Conference Record - Abstracts. IEEE, 2006. http://dx.doi.org/10.1109/plasma.2006.1707342.
Der volle Inhalt der QuelleGhazaryan, Lilit, Ernst-Bernhard Kley, Andreas Tünnermann und Adriana Szeghalmi. „Nanoporous SiO2made by atomic layer deposition and atomic layer etching“. In SPIE Optical Systems Design, herausgegeben von Michel Lequime, H. Angus Macleod und Detlev Ristau. SPIE, 2015. http://dx.doi.org/10.1117/12.2192972.
Der volle Inhalt der QuelleAgarwal, Ankur, und Mark J. Kushner. „Recipes for Plasma Atomic Layer Etching“. In 2007 IEEE Pulsed Power Plasma Science Conference. IEEE, 2007. http://dx.doi.org/10.1109/ppps.2007.4345771.
Der volle Inhalt der QuelleRanjan, Alok, und Sonam D. Sherpa. „New frontiers of atomic layer etching“. In Advanced Etch Technology for Nanopatterning VII, herausgegeben von Sebastian U. Engelmann und Richard S. Wise. SPIE, 2018. http://dx.doi.org/10.1117/12.2284662.
Der volle Inhalt der QuelleLill, Thorsten, Keren J. Kanarik, Samantha Tan, Skip Berry, Andreas Fischer, Vahid Vahedi und Richard A. Gottscho. „Atomic Layer Etching: Benefits and Challenges“. In 2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM). IEEE, 2018. http://dx.doi.org/10.1109/edtm.2018.8421486.
Der volle Inhalt der QuelleHuffman, Craig, Eric A. Joseph und Satyavolu PapaRao. „Moving from thin films to atomic layers — Atomic layer etching“. In 2015 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA). IEEE, 2015. http://dx.doi.org/10.1109/vlsi-tsa.2015.7117594.
Der volle Inhalt der QuelleZhang, Y., J. Chong, C. Wang, Q. Xie und D. Li. „Quasi-Atomic Layer Etching Technology for High Uniformity Etching Applications“. In 2020 China Semiconductor Technology International Conference (CSTIC). IEEE, 2020. http://dx.doi.org/10.1109/cstic49141.2020.9282601.
Der volle Inhalt der QuelleGeorge, Steven M. „Thermal Atomic Layer Etching of Microelectronic Materials“. In 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). IEEE, 2021. http://dx.doi.org/10.1109/edtm50988.2021.9421056.
Der volle Inhalt der QuelleCooke, Mikeke. „Atomic Layer Etching: Introduction and First Uses“. In 60th Society of Vacuum Coaters Annual Technical Conference. Society of Vacuum Coaters, 2018. http://dx.doi.org/10.14332/svc17.proc.42800.
Der volle Inhalt der QuelleFischer, Andreas, Richard Janek, John Boniface, Thorsten Lill, K. J. Kanarik, Yang Pan, Vahid Vahedi und Richard A. Gottscho. „Plasma-assisted thermal atomic layer etching of Al2O3“. In SPIE Advanced Lithography, herausgegeben von Sebastian U. Engelmann und Rich S. Wise. SPIE, 2017. http://dx.doi.org/10.1117/12.2258129.
Der volle Inhalt der QuelleBerichte der Organisationen zum Thema "Atomic Layer Etching"
Economou, Demetre J., und Vincent M. Donnelly. Pulsed Plasma with Synchronous Boundary Voltage for Rapid Atomic Layer Etching. Office of Scientific and Technical Information (OSTI), Mai 2014. http://dx.doi.org/10.2172/1130983.
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