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Thematische Bibliographien / Arsenid inditý / Dissertationen

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Dissertationen zum Thema „Arsenid inditý“

Autor: Grafiati

Veröffentlicht am 28. Juni 2021

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1

Stanislav, Silvestr. „Příprava nízkodimenzionálních III-V polovodičů“. Master's thesis, Vysoké učení technické v Brně. Fakulta strojního inženýrství, 2021. http://www.nusl.cz/ntk/nusl-443735.

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Tato diplomová práce se zabývá přípravou nanostruktur z indium arsenidu (InAs) pomocí metody molekulární svazkové epitaxe (MBE). Důraz je kladen na výrobu struktur ve formě nanodrátů na křemíkovém substrátu. V úvodní části práce je popsána motivace pro studium III-V polovodičů a konkrétně InAs. Následující kapitoly vysvětlují dva základní princpy tvorby nanodrátů. Experimentální část práce diskutuje možnost přípravy indiového katalyzátoru pro samokatalyzovaný růst InAs nanodrátů v konkrétní aparatuře MBE. Následuje prezentace výsledků růstu InAs nanodrátů mechanismem selektivní epitaxe (SAE). Nanodráty byly vyrobeny na substrátu s termálně dekomponovaným oxidem a rovněž na substrátech s litograficky připravenou oxidovou maskou.

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2

Johns, Steven 1964. „Room-temperature carrier lifetimes and optical nonlinearities of gallium-indium-arsenide/aluminum-indium-arsenide and gallium-aluminum-indium-arsenide/aluminum-indium-arsenide MQW devices at 1.3μm“. Thesis, The University of Arizona, 1991. http://hdl.handle.net/10150/277949.

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The room-temperature nonlinear absorption spectra of a GaInAs/AlInAs and a GaAlInAs/AlInAs multiple quantum well (MQW) were measured near 1.3 μm using a pump-probe technique. Saturation carrier densities at the heavy-hole exciton peak were determined to be 1.2 x 10¹⁸ and 1.0 x 10¹⁸ cm⁻³ with carrier lifetimes of ≃ 2.3 ns and ≃ 750 ps for the two samples, respectively. Fabry-Perot etalons with integrated mirrors grown by molecular beam epitaxy (MBE) with GaInAs/AlInAs MQWs as spacer layers were also fabricated as optical switching devices. A 175 ps recovery time was measured for the etalon at room temperature.

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3

Shah, Syed Hassan. „Study of nonlinear optical properties of indium arsenide/gallium arsenide and indium gallium arsenide/gallium arsenide self-assembled quantum dots“. Access to citation, abstract and download form provided by ProQuest Information and Learning Company; downloadable PDF file, 97 p, 2008. http://proquest.umi.com/pqdweb?did=1460350251&sid=5&Fmt=2&clientId=8331&RQT=309&VName=PQD.

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4

Guo, Wei. „Growth of highly ordered indium arsenide/gallium arsenide and indium gallium arsenide/gallium arsenide quantum dots on nano-patterned substrates by MBE“. View abstract/electronic edition; access limited to Brown University users, 2008. http://gateway.proquest.com/openurl?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&res_dat=xri:pqdiss&rft_dat=xri:pqdiss:3318323.

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5

Noori, Atif M. „Metamorphic materials for indium arsenide transistors“. Diss., Restricted to subscribing institutions, 2006. http://proquest.umi.com/pqdweb?did=1276402841&sid=1&Fmt=2&clientId=1564&RQT=309&VName=PQD.

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6

Pon, Russell Michael. „Optical properties of gallium arsenide/aluminum gallium arsenide and gallium aluminum indium arsenide/indium aluminum arsenide multiple quantum well and superlattice structures grown by molecular beam epitaxy“. Diss., The University of Arizona, 1991. http://hdl.handle.net/10150/185370.

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Gain spectra are characterized as a function of the well-width in GaAs multiple quantum wells with AlGaAs barriers by nanosecond pump-probe spectroscopy. The gain bandwidth is larger for the same peak gain in wider well-width multiple quantum wells and is explained qualitatively. The Iinewidth broadening factor is calculated from the gain spectra and studied as a material parameter. It is shown that the linewidth broadening factor increases with wavelength and decreases with carrier density. MBE-grown integrated-mirror etalons made from GaAs/AlGaAs. in the 800 nm wavelength region. and GaAllnAs/InAlAs. in the 1.3 μm wavelength region. exhibit lasing by optical pumping. Below threshold. the 800 nm integrated-mirror etalon is used for nonlinear switching which. in the architecture presented. is capable of extracting a single 10 ps pulse from a pair of pulses spaced 40 ps apart. Nonlinear optical properties of type II GaAs/AlAs short-period superlattices are presented and show an apparent high energy shift of the absorption band edge at 10K and no shift at 77 K as the absorption is saturated. Type I multiple quantum well structures of similar dimensions show similar high energy band edge shifts for both temperatures. 10K and 77 K due to phase-space filling. In contrast. electrons in type II structures reside in the barrier and do not contribute to the chemical potential. Transitions in GaAs/AlGaAs coupled-well superlattices show transitions that are a function of the center barrier thickness and reveal shorter carrier lifetimes than a GaAs quantum well of equal thickness without a center barrier.

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7

Pancholi, Anup. „(Indium,gallium)arsenide quantum dot materials for solar cell applications effect of strain-reducing and strain-compensated barriers on quantum dot structural and optical properties /“. Access to citation, abstract and download form provided by ProQuest Information and Learning Company; downloadable PDF file, 172 p, 2009. http://proquest.umi.com/pqdweb?did=1654501701&sid=2&Fmt=2&clientId=8331&RQT=309&VName=PQD.

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Thesis (Ph.D.)--University of Delaware, 2008.
Principal faculty advisors: Valeria Gabriela Stoleru, Dept. of Materials Science & Engineering; and S. Ismat Shah, Dept. of Materials Science. Includes bibliographical references.

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8

Martinez, Marino Juan. „Evaluation of gallium arsenic(x) antimony(1-x)/indium(y) aluminum(1-y) arsenicp-channel HIGFETs for complementary technologies“. Diss., The University of Arizona, 1993. http://hdl.handle.net/10150/186496.

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This work shows the viability of p-channel GaAsₓSb₁₋ₓ/In(y)Al(1-y)As HIGFETs for III-V compound-based complementary technologies to compete with silicon CMOS for specialized applications. Monte Carlo simulation was used to establish that even for the most extreme cases of alloy scattering GaAsₓSb₁₋ₓ on InP has a higher bulk hole mobility than GaAs. Process development demonstrated that H₂O:H₂O₂:H₃PO₄:L-tartaric acid-based etchant solutions provide a reliable etchant with a selectivity of approximately 2:1 of GaAsₓSb₁₋ₓ over In(y)Al(1-y)As. Process development also showed that Ti/Au was the most reliable gate metal for contact to In(y)Al(1-y)As and that care must be taken to avoid letting some common chemical solutions come into contact with GaAsₓSb₁₋ₓ. Experimental devices established that lattice-matched GaAsₓSb₁₋ₓ channel layers had low gate leakage currents, but had otherwise poor performance. However, experimental devices with strained GaSb-rich GaAsₓSb₁₋ₓ channels had the lowest recorded gate leakage current for a heterostructure FET yielding a gate turn-on voltage of -3 V and also had transconductance and current drive comparable to the best p-channel HIGFETs of any material systems to date. Finally, SPICE simulations showed that if integrated with n-channel HIGFETs with comparable gate leakage and moderate performance, modestly improved p-channel devices make possible technology with approximately half the delay time of similar CMOS circuits. Although silicon CMOS has enormous advantages over complementary HFETs in terms of robustness and yield which allow very high densities of integration, this work clearly establishes that this infant technology has the capability to challenge the more established CMOS on the basis of speed and power consumption.

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9

Hsu, Chia Chen. „The nonlinear optical properties of KTP, 4BCMU, and gallium indium arsenide/aluminum indium arsenide multiple quantum well“. Diss., The University of Arizona, 1991. http://hdl.handle.net/10150/185611.

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In this dissertation different nonlinear materials for applications in frequency generation and nonlinear optical switching devices are investigated. The important aspects for efficient frequency generation in a three-wave mixing interaction are introduced. Blue laser light generation by sum frequency mixing in a KTP crystal and the production of tunable infrared in a LiIO₃ crystal by difference frequency mixing are demonstrated. The third-order optical nonlinear susceptibities of single-crystaline and spin-coated amorphous P-4BCMU thin films are measured by third harmonic generation. The effects of polymer orientation and multiphoton enhancement are discussed. A novel investigation of the room-temperature optical nonlinearities and recovery time of GaInAs/AlInAs and GaAlInAs/AlInAs MQWs at 1.3 μm are presented. Fabry-Perot etalons with integrated mirrors grown by molecular beam epitaxy with GaInAs/AlInAs MQWs as spacer layers are fabricated as optical logic gate devices. The recovery time of the etalon switching device is measured.

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10

Krol, Mark Francis. „Ultrafast carrier dynamics and enhanced electroabsorption in (gallium,indium)arsenide/(aluminum,indium)arsenide asymmetric double quantum well structures“. Diss., The University of Arizona, 1995. http://hdl.handle.net/10150/187240.

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An experimental study, utilizing a novel nondegenerate transmission pump/probe technique, of ultrafast electron and hole tunneling in (Ga,In)As/Al,In)As asymmetric double quantum wells (ADQWs) is presented. A single time constant is observed at low carrier densities indicating the holes tunnel from the narrow well (NW) to the wide well (WW) at least as fast as electrons. At high carrier densities a two component decay is observed, consistent with phase-space filling and space-charge effects blocking tunneling carriers. The fast transfer of electrons was confirmed to be a LO-phonon assisted process. A detailed theoretical study of ultrafast hole tunneling at low carrier densities indicates that in ternary materials alloy disorder is responsible for fast hole transfer between the wells. Enhanced electroabsorption in selectively doped (Ga,In)As/(Al,In)As ADQWs by the use of real space electron transfer is demonstrated. The electron concentration in both the WW and NW is investigated by field-dependent absorption and photoluminescence spectroscopy. The results are compared to absorption changes in an undoped ADQW structure which utilizes the quantum confined Stark effect. The doped modulator exhibits a significantly larger red-shift with applied field than the undoped structure.

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11

Affentauschegg, Cedric M. „Properties of indium arsenide surfaces and heterostructures /“. Diss., Connect to a 24 p. preview or request complete full text in PDF format. Access restricted to UC campuses, 1999. http://wwwlib.umi.com/cr/ucsd/fullcit?p9952651.

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12

Shi, Yushan. „X-ray structural studies of heteroepitaxy of gallium-indium arsenide on gallium arsenide“. Thesis, McGill University, 1992. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=39367.

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This thesis presents the techniques and results of our x-ray structural studies of strained Ga$ sb{1-x}$In$ sb{x}$As epilayers grown on GaAs (001) by metallorganic chemical vapor deposition.
By combining conventional x-ray techniques with newly developed glancing incidence and reflectivity measurements, we study both the out-of-plane and the in-plane structure. We also obtain direct information on the mechanisms of the structural relaxation which occurs in these systems. The techniques we have used are based on using a conventional x-ray source and could be widely used to characterize and study growth processes and sample quality.
Using the conventional characterization of the positions, widths, and intensities of Bragg peaks lattice parameters, domain sizes and strains have been evaluated. Studying the shape of the Bragg peak shows that the simple theoretical models based on the existence of a critical thickness due to dislocation can not be used to explain the structural relaxation observed. Our results based on thin (500 $ pm$ 12A, $x=0.19 pm 0.003$) and thick (40000 $ pm$ 1000A, $x=0.16 pm 0.01$) epilayers require a complicated microstructure in a transition region between the substrate and the surface of the epilayers.

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13

Haysom, Joan E. „Quantum well intermixing of indium gallium arsenide(phosphorus)/indium phosphorus heterostructures“. Thesis, University of Ottawa (Canada), 2001. http://hdl.handle.net/10393/9400.

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This thesis studies several aspects of the interdiffusion of InGaAs(P)/InP quantum well (QW) heterostructures, from the fundamental defect mechanisms, through optimization of processing parameters, to novel device applications. Conclusions from each of these areas have been drawn which further the scientific understanding and the manufacturability of the technique. The thermal stability of a series of different wafers is studied to highlight how poor quality of growth can cause increased interdiffusion, and to review the requirements for achieving repeatable annealing. Purposeful and controlled interdiffusion is accomplished through the introduction of excess defects into layers above the QWs, which during a subsequent anneal, diffuse through the QWs and enhance interdiffusion of atoms of the QWs with atoms of the barriers. These excess defects are introduced using two different techniques, via growth at low temperatures (LT) using chemical beam epitaxy (CBE), and via implantation of phosphorus ions. The CBE LT growth technique is new, and reported for the first time in this thesis. Characterization of the as-grown layers leads us to believe that they have an excess of phosphorus. The diffusion rate of the mobile defects which cause the intermixing is also measured, and the interdiffusion is shown to occur predominantly on the group-V sublattice. Due to many similarities between this and the results of the implantation technique, it is proposed that these mobile defects are the same for both intermixing approaches, and that the behaviour can be explained by a phosphorus interstitial mechanism. Annealing recipes for the implantation-induced technique are optimized, and the sample-to-sample reproducibility of the blueshift for this method was found to be quite good (standard deviations of ∼6 meV on blueshifts of ∼70 meV). The lateral selectivity and refractive index changes are characterized, and used in combination to create novel buried waveguide devices.

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14

Boyle, Jonathan. „Bandstructure engineering of indium arsenide quantum dots in gallium arsenide antimonide barriers for photovoltaic applications“. Access to citation, abstract and download form provided by ProQuest Information and Learning Company; downloadable PDF file, 92 p, 2008. http://proquest.umi.com/pqdweb?did=1605158181&sid=2&Fmt=2&clientId=8331&RQT=309&VName=PQD.

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15

Unal, Ozer. „Interface studies in silicon nitride/silicon carbide and gallium indium arsenide/gallium arsenide systems“. Case Western Reserve University School of Graduate Studies / OhioLINK, 1991. http://rave.ohiolink.edu/etdc/view?acc_num=case1059501714.

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16

Kerr, William. „Structural and optical studies of indium gallium arsenide/gallium arsenide quantum dot molecules for terahertz applications“. Access to citation, abstract and download form provided by ProQuest Information and Learning Company; downloadable PDF file, 80 p, 2006. http://proquest.umi.com/pqdweb?did=1203586781&sid=5&Fmt=2&clientId=8331&RQT=309&VName=PQD.

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17

Bergman, Joshua. „Development of Indium Arsenide Quantum Well Electronic Circuits“. Diss., Georgia Institute of Technology, 2004. http://hdl.handle.net/1853/5033.

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This dissertation focuses on the development of integrated circuits that employ InAs quantum well electronic devices. There are two InAs quantum well electronic devices studied in this work, the first being the pseudomorphic InAs/In₀.₅₃Ga₀.₄₇As/AlAs resonant tunneling diode (RTD) grown on an InP substrate, and the second being the InAs/AlSb HEMT. Because of there is no semi-insulating substrate near the InAs lattice constant of 6.06 Å this work develops monolithic and hybrid integration methods to realize integrated circuits. For the case of hybrid RTD circuits, a thin-film integration method was developed to integrate InAs/In₀.₅₃Ga₀.₄₇As/AlAs RTDs to prefabricated CMOS circuits, and this technique was employed to demonstrate a novel RTD-CMOS comparator. To achieve higher speed circuit operation, a next-generation RTD fabrication process was developed to minimize the parasitic capacitance associated with the thin-film hybridization process. This improved fabrication process is detailed and yield and uniformity analysis is included. Similar InP-based tunnel diodes can be integrated with InP-based HEMTs in monolithic RTD-HEMT integrated circuits, and in this work elementary microwave circuit components were characterized that co-integrate InP-based tunnel diodes with HEMTs. In the case of the InAs/AlSb HEMT, the monolithic approach grows the HEMT on a metamorphic buffer on a GaAs substrate. The semiconductor material and process development of the InAs/AlSb HEMT MMIC technology is described. The remarkable microwave and RF noise properties of the InAs/AlSb HEMT were characterized and analyzed, with special attention given to the strong effects of impact ionization in the narrow bandgap InAs channel. Results showed the extent to which impact ionization affects the small-signal gain and noise figure of the HEMT, and that these effects become less prevalent as the frequency of operation increases.

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18

Hoffmann, Eric A. 1982. „The thermoelectric efficiency of quantum dots in indium arsenide/indium phosphide nanowires“. Thesis, University of Oregon, 2009. http://hdl.handle.net/1794/10552.

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xi, 193 p. : ill. (some col.) A print copy of this thesis is available through the UO Libraries. Search the library catalog for the location and call number.
State of the art semiconductor materials engineering provides the possibility to fabricate devices on the lower end of the mesoscopic scale and confine only a handful of electrons to a region of space. When the thermal energy is reduced below the energetic quantum level spacing, the confined electrons assume energy levels akin to the core-shell structure of natural atoms. Such "artificial atoms", also known as quantum dots, can be loaded with electrons, one-by-one, and subsequently unloaded using source and drain electrical contacts. As such, quantum dots are uniquely tunable platforms for performing quantum transport and quantum control experiments. Voltage-biased electron transport through quantum dots has been studied extensively. Far less attention has been given to thermoelectric effects in quantum dots, that is, electron transport induced by a temperature gradient. This dissertation focuses on the efficiency of direct thermal-to-electric energy conversion in InAs/InP quantum dots embedded in nanowires. The efficiency of thermoelectric heat engines is bounded by the same maximum efficiency as cyclic heat engines; namely, by Carnot efficiency. The efficiency of bulk thermoelectric materials suffers from their inability to transport charge carriers selectively based on energy. Owing to their three-dimensional momentum quantization, quantum dots operate as electron energy filters--a property which can be harnessed to minimize entropy production and therefore maximize efficiency. This research was motivated by the possibility to realize experimentally a thermodynamic heat engine operating with near-Carnot efficiency using the unique behavior of quantum dots. To this end, a microscopic heating scheme for the application of a temperature difference across a quantum dot was developed in conjunction with a novel quantum-dot thermometry technique used for quantifying the magnitude of the applied temperature difference. While pursuing high-efficiency thermoelectric performance, many mesoscopic thermoelectric effects were observed and studied, including Coulomb-blockade thermovoltage oscillations, thermoelectric power generation, and strong nonlinear behavior. In the end, a quantum-dot-based thermoelectric heat engine was achieved and demonstrated an electronic efficiency of up to 95% Carnot efficiency.
Committee in charge: Stephen Kevan, Chairperson, Physics; Heiner Linke, Member, Physics; Roger Haydock, Member, Physics; Stephen Hsu, Member, Physics; David Johnson, Outside Member, Chemistry

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19

Singh, David. „AB initio calculations of the properties of indium antimonide and indium arsenide“. Thesis, University of Ottawa (Canada), 1985. http://hdl.handle.net/10393/5016.

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20

Sourribes, M. J. L. „Electronic transport in indium arsenide nanowires grown on silicon“. Thesis, University College London (University of London), 2014. http://discovery.ucl.ac.uk/1435415/.

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Indium arsenide (InAs) nanowires are attracting a growing interest in the semiconductor industry as their remarkable properties make them ideal candidates for future applications in a wide variety of electronic, photonic and sensing devices. In the present work, InAs nanowires are grown via solid-source molecular beam epitaxy on Si (111) substrates without the use of heterocatalytic nanoparticle seeds. The native oxide layer forming easily on InAs nanowires must be removed prior to metallisation to achieve highly transparent contacts. We present a systematic comparative study of the contact resistance between InAs nanowires and metals following the use of (a) a wet etching in an ammonium polysulfide solution or (b) an argon milling process. Nanowires treated by the argon milling process with in situ deposition of metallic contacts exhibit a contact resistance which is more than one order of magnitude lower than that of nanowires treated with ammonium polysulfide. From fourpoint measurements, an upper bound of 1.4×10−7 .cm2 is extracted for the contact resistivity of metallic contacts on nanowires treated by the argon milling process. While the growth of semiconductor nanowires on silicon allows their direct integration with the established CMOS technology, the absence of a heterocatalyst usually results in a pronounced polytypism in the nanowires, proved to be detrimental to their optical and electrical properties. To solve this issue, InAs1−xSbx nanowires (0 _ x _ 0.15) were grown on silicon substrate via a catalyst-free MBE process. We observed a sharp decrease of stacking fault density in the InAs1−xSbx nanowire crystal structure with increasing antimony content. InAs0.85Sb0.15 nanowires exhibit a mobility three times larger than InAs nanowires. Finally both magnetic-field-dependent and gate-voltage-dependent measurements of universal conductance fluctuations and of localisation effects were performed on InAs and InAs1−xSbx nanowires at low temperature. From the analysis of the fluctuation amplitude and the correlation field, a phase-coherence length in the hundred nanometre range is observed for all nanowires below 10 K.

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21

MacPherson, Glyn. „Distribution and control of misfit dislocations in indium gallium arsenide layers grown on gallium arsenide substrates“. Thesis, University of Liverpool, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.318239.

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22

Chatterjee, Suvabrata. „Groundwater management in the Arsenic belt of India“. Thesis, Queen's University Belfast, 2008. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.486050.

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The high arsenic content of the groundwater in the Holocene aquifer of the Bengal delta plain is unique and elusive in the extent of its exposure causing a threat to the lives of millions of people in the region. The thesis presents a general review on the arsenic contamination of the aquifer in the region with special emphasis on the mobilisation and mitigation issues and stresses the need for the holistic approach for sustainable development of the groundwater resource. A contingent valuation study ( CVM) was conducted to survey the residents of a arsenic affected village about their willingness to pay for arsenic free water in place of arsenic laden water they were getting for drinking and cooking purpose. CVM uses surveys of expressed preferences to evaluate the willingness to pay for non-market, environmental goods. Assured, affordable and sustainable safe water resources are vital for all community to combat an arsenic disaster. Competent water resource management could playa key role to solve the arsenic contamination problem. The study conducted focused on the role of the cooperative and non cooperative extraction of groundwater on sustainable exploitation of a jointly used groundwater resources Water scarcity and its contamination are biggest challenge to the scientific community. The rising cost of generating new supplies and the scarcity of safe and uncontaminated water resource has led to increased emphasis on the better management of the existing water resources. An analysis of deficit irrigation in three quite different situation using five crops viz potato, wheat, maize, onion and sesame was conducted to better understand the potential benefits and risks associated with the irrigation strategy. Crop yield function and crop function were developed and is used to estimate the level applied water that would produce maximum net income in each situation

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23

Swaminathan, Krishna. „Room-temperature aluminum gallium arsenic antimonide/indium gallium arsenic antimonide heterojunction phototransistors for the 2 micron region“. Access to citation, abstract and download form provided by ProQuest Information and Learning Company; downloadable PDF file, 83 p, 2009. http://proquest.umi.com/pqdweb?did=1654487611&sid=7&Fmt=2&clientId=8331&RQT=309&VName=PQD.

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24

Eastridge, Emily. „ARSENIC HETEROGENEITY IN AQUIFER SEDIMENTS FROM WEST BENGAL, INDIA“. UKnowledge, 2011. http://uknowledge.uky.edu/ees_etds/3.

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Multiple studies in the Bengal basin have shown that elevated As in groundwater coincides with reduced, relatively dark sediments of Himalayan provenance. In West Bengal state (India), As concentrations > 10 μg/L tend to occur east of the River Bhagirathi-Hoogly, the main distributary of the Ganges. Associations among sediment chemistry and mineralogy for four cores from either side of the Bhagirathi-Hoogly (cores 1 and 2 to the east, 3 and 4 to the west) in Murshidabad district were investigated. Ten sediment samples were collected from each boring at various depths to a maximum of 38 to 43 m. Sediment chemistry was investigated using sequential extraction, digestion and analysis of As, Al, Ca, Fe, and Mn on an ICP-OES and GFAAS, and by total carbon analysis on a CNS analyzer. Organic carbon content was measured gravimetrically by HCl digestion. Sediment mineralogy was investigated using thin-section petrography and a microprobe EDS. Pyroxenes and phyllosilicates appear to be the primary sources of arsenic in the study area. Additionally, core 4 sediments are mineralogically similar to cores 1 and 2 despite differences in arsenic concentrations in the groundwater. We conclude that a 65-ft (20-m) silt layer overlying the aquifer sands in core 4 acts as a local aquitard and restricts arsenic mobilization locally.

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Krzyzewski, Tomaz Jan. „Surface processes, morphology and reconstruction in InAs/GaAs heteroepitaxy“. Thesis, Imperial College London, 2002. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.272384.

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26

Eassa, Nahswa Abo Alhassan Eassa. „Surface modifications of InAs: effect of chemical processing on electronic structure and photoluminescent properties“. Thesis, Nelson Mandela Metropolitan University, 2012. http://hdl.handle.net/10948/8714.

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In this thesis, the effects of various chemical treatments on the surface modification of bulk InAs are investigated. The study focuses on the chemical processes that occur upon the exposure of the surface to sulphur-, chlorine- and bromine-containing solutions and oxygen, and the resulting changes to the electronic structure of the surface, as deduced from photoluminescence (PL) measurements, X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), Raman scattering and scanning electron microscopy (SEM). Three processing treatments were evaluated: i) treatment with sulphur-based solutions (Na2S:9H2O, (NH4)2S + S, [(NH4)2S / (NH4)2SO4] + S); ii) etching in halogen-based solutions (bromine-methanol and HCl: H2O); and iii) thermal oxidation. A significant overall enhancement in PL response was observed after chemical treatment or thermal oxidation, which is associated with a reduction in surface band bending. These changes correlate with the removal of the native oxide, in addition to the formation of well-ordered layers of In-S (or In-As)O as a passivating layer, indicating that electronic passivation occurs at the surface. The passivating effect on sulphide treated surfaces is unstable, however, with an increase in band bending, due to reoxidation, observed over periods of a few days. The lowest re-oxidation rate was observed for ([(NH4)2S / (NH4)2SO4] + S). Etching in HCl:H2O and Br-methanol solutions of appropriate concentrations and for moderate times (1 min) resulted in smooth and defect-free InAs surfaces. Etching completely removed the native oxides from the surface and enhanced the PL response. The adsorption of bromine and chlorine onto the InAs surface led to the formation of As-Brx , In-Brx, As-Clx and In-Clxcompounds (x = 1, 2, 3), as inferred from changes in the In 3d3/2; 5/2 and As 3d core level binding energies. The etch rate was found to decrease because of strong anisotropic effects. The improvements in surface properties were reversed, however, if the concentrations of the etchants increased or the etch time was too long. In the worst cases, pit formation and inverted pyramids with {111} side facets were observed. Surface treatments or thermal oxidisation significantly enhanced the PL intensity relative to that of the as-received samples. This was due to a reduction in the surface state density upon de-oxidation, or in some cases, to the formation of a well ordered oxide layer on the surface. The overall increase in PL intensity after treatment is ascribed to a reduction in band bending near the surface. This allows several welldefined peaks not observed or reported previously for bulk InAs (with a carrier concentration n~2x1016 cm-3), to be studied. A combination of PL and XPS measurements before and after the various treatments was used to identify the chemical nature of the impurities giving rise to bound exciton recombination in InAs (111).

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27

Gotthold, David William. „Molecular beam epitaxy of gallium indium nitride arsenide for optoelectronic devices /“. Digital version accessible at:, 2000. http://wwwlib.umi.com/cr/utexas/main.

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28

Masaki, Michael Masakichi 1975. „Design, modeling, and optimization of indium arsenide diodes for microscale thermophotovoltaics“. Thesis, Massachusetts Institute of Technology, 2000. http://hdl.handle.net/1721.1/86606.

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Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, February 2001.
Includes bibliographical references (p. 86-88).
by Michael Masakichi Masaki.
S.M.

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Steinbrecher, Gregory R. „Indium arsenide quantum dots for single photons in the communications band“. Thesis, Massachusetts Institute of Technology, 2013. http://hdl.handle.net/1721.1/85227.

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Thesis: M. Eng., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2013.
This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.
Cataloged from student-submitted PDF version of thesis.
Includes bibliographical references (pages 75-78).
This thesis presents work towards engineering and characterizing epitaxial Indium Arsenide (InAs) quantum dots as single photon sources in the optical communications C-Band (Conventional Band; 1535 nm-1565 nm wavelength). First, the underlying theory of semiconductor quantum dots and the necessary tools from quantum optics are reviewed. Next, a detailed description is given of the experimental system design, along with an overview of the design and implementation process of a cryogenic scanning laser confocal microscope. Then, the quantum dot growth process is presented along with the results of measurements on early quantum dot samples, which suggested that the initial growth process needed to be refined. We present efforts towards improving the growth process and measurements of quantum dot samples resulting from this new process.
by Gregory R. Steinbrecher.
M. Eng.

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30

Benzaquen, Roberto. „Photoluminescence of heavily zinc-doped gallium arsenide and gallium indium arsenide grown by low-pressure metal organic vapour phase epitaxy“. Thesis, University of Ottawa (Canada), 1991. http://hdl.handle.net/10393/7891.

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Zn-doped, p-type, GaAs and $\rm Ga\sb{0.85}In\sb{0.15}As$ samples grown by low-pressure metal organic vapour phase epitaxy with free carrier concentrations in the range of n = 4.3 $\times$ 10$\sp {\rm cm}\sp{-3}$ (nominally undoped)--p = 1.95 x 10$\sp{20} {\rm cm}\sp{-3}$ at room temperature have been studied by temperature-dependent photoluminescence. At low doping levels, recombinations involving discrete impurity states and free excitons provided measurement of both the 5 K band gap ($E\sb{g}(5)=(1.296\pm0.003)$ eV) and the zinc acceptor binding energy $(E(Zn\sp0)=(0.025\pm0.003)$ eV) in the $\rm Ga\sb{0.85}In\sb{0.15}As$ alloy. At high concentrations, the discrete acceptor levels are replace by an impurity band which merges with the valence band above the Mott$\sp{\lbrack 1\rbrack}$ transition. This gives rise to a density of states band tail extending into the gap and containing both extended and localised states. In the presence of such a high density of impurities, potential fluctuations and interparticle interactions result in a band gap shrinkage $\vert \Delta E\sb{g}\vert$ which has been observed with photoluminescence experiments. A model based on the presence of Kane$\sp{\lbrack 2\rbrack}$ band tails and on the assumption of a constant matrix element for the relevant optical transitions has been fitted to the photoluminescence spectra of heavily doped layers of GaAs and $\rm Ga\sb{0.85}In\sb{0.15}As$ in the range of $p=1.6\times 10\sp $ cm$\sp{-3}-p=1.95\times 10\sp{20}$ cm$\sp{-3}.$ This model provided a good description of the experimental results. The 5 K band gap shrinkage has been found to be $\vert\Delta E\sb{g}\vert=2.7\times 10\sp{-8}p\sp{1/3}$ for GaAs and $\vert\Delta E\sb{g}\vert=1.4\times 10\sp{-8}p\sp{1/3}$ for $\rm Ga\sb{0.85}In\sb{0.15}As$ with $\vert\Delta E\sb{g}\vert$ in Ev and p in cm$\sp{-3}.$

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Chowdhury, Ahmedul Chemical Sciences &amp Engineering Faculty of Engineering UNSW. „Development of low-cost systems for safe drinking water in areas of Bangladesh and India affected by arsenic“. Publisher:University of New South Wales. Chemical Sciences & Engineering, 2009. http://handle.unsw.edu.au/1959.4/43340.

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Safe water options for five arsenic-affected villages (Sarupie, Manikganj; Daniapara, Shirajdekhan; Babutepara, Muradnagar; Iruaien, Laksham; Rahulllabad, Nabinagar) in central Bangladesh were studied in order to assist the local people and to obtain an indication of general solutions to the arsenic problem that is currently affecting ~100 million people on the Indian subcontinent. Arsenic concentrations were measured in all drinking waters believed to be safe and in a random sample of "red" (unsafe) tubewell waters. Depending on geography, history of safe water sources and availability of pond/river, the options of dugwells, deep tubewells and sand filters were recommended for core village areas, combined with sustainable output testing and a distribution system to maximise the benefits of sustainable water output. Very shallow tubewells were recommended for testing in villages where dugwells were successful. Rainwater harvesting was not recommended, due to expense, small storage capacity and summer dry periods. Two dugwells of optimised design were constructed in Iruaien and Daniapara, each serving 50-100 families. The knowledge gained in the villages was incorporated into the first draft of a "Safe Water Book" for dissemination of honest and accurate information about solutions to the arsenic problem. An air/iron treatment system was developed for removal of arsenic from tubewell water in locations where water treatment is the only option available. The system is based on the Bangladeshi "three kalshi" method, but optimised for efficient contact of water with air and iron. It can be constructed like a sand filter, and requires no chemical input, except for clean scrap iron. Spent scrap iron containing arsenic can be incorporated into concrete for safe disposal. A model air/iron system was constructed and run for two years to demonstrate the long-term viability of the device. A colorimetric method, using silver diethyldithiocarbamate, was developed for determination of arsenic in the villages of Bangladesh. The equipment was adapted for rugged field use, and performed successfully without electricity or running water in improvised laboratory space in villages, providing linear calibrations 0-500 ??g/L and a 2σ limit of detection of 5 ??g/L. The appropriate technologies that should be developed or optimised for the arsenic affected region are described and preliminary suggestions are given about means by which self-propagating solutions might be developed in villages to solve the arsenic problem.

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32

Cypranowski, Corinne. „Power recovery of radiation-damaged gallium arsenide and indium phosphide solar cells“. Thesis, Monterey, California. Naval Postgraduate School, 1989. http://hdl.handle.net/10945/27215.

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33

Wilkinson, Lucinda Clare. „Indium gallium arsenide multiple quantum well devices for optically interconnected smart pixels“. Thesis, Heriot-Watt University, 1998. http://hdl.handle.net/10399/640.

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34

Byrnes, Daniel P. „Scanning tunneling optical resonance microscopy applied to indium arsenide quantum dot structures /“. Online version of thesis, 2009. http://hdl.handle.net/1850/11200.

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35

Narendar, Harish. „A Simulation Study of Enhancement mode Indium Arsenide Nanowire Field Effect Transistor“. University of Cincinnati / OhioLINK, 2009. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1259080514.

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36

Grenouilloux, Thomas. „Etude des mécanismes de diffusion dans les alliages HgCdTe pour la détection infrarouge“. Thesis, Strasbourg, 2017. http://www.theses.fr/2017STRAD020.

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Ces travaux de thèse ont développé l’ensemble des problématiques de diffusion liées à la fabrication de la technologie HgCdTe p/n, avec pour objectif l’obtention d’un modèle numérique permettant la simulation complète de la diode. Nous avons étudié le phénomène d’interdiffusion Hg/Cd, indispensable au processus de passivation du photodétecteur. Dans un milieu monocristallin le coefficient d’interdiffusion est calculé par la loi de Darken qui fait intervenir le facteur thermodynamique, dont nous avons déterminé la variation en température. L’exodiffusion de l’indium, le dopant n, et sa diffusion dans le HgCdTe ont aussi été étudiées. L’arsenic est utilisé comme dopant p et est donc activé en conditions riche-Hg. Nous avons tout d’abord étudié sa diffusion, tout d’abord dans des conditions classiques, puis après son incorporation dans le HgCdTe en présence de défauts hors-équilibre
This thesis work focuses on the modeling of the different diffusion phenomena that occur during the processing steps of the p/n HgCdTe technology. Hg/Cd interdiffusion is essential for the passivation of the HgCdTe and so was addressed. In a monocrystalline material, the interdiffusion coefficient is calculated with the Darken law. It includes the thermodynamic factor which temperature dependence was determined. Indium exodiffusion and diffusion in HgCdTe were also studied. Arsenic is used as a p dopant and so is activated in Hg-rich conditions. Its diffusion was studied firstly in classic conditions, and then after its incorporation in HgCdTe with the influence of out of equilibrium point defects

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37

Lidsky, David. „Design, Fabrication and Characterization of a GaAs/InxGa1-xAs/GaAs Heterojunction Bipolar Transistor“. Thesis, Virginia Tech, 2014. http://hdl.handle.net/10919/52591.

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Designs for PnP GaAs/InxGa1-xAs/GaAs heterojunction bipolar transistors (HBTs) are proposed and simulated with the aid of commercial software. Band diagrams, Gummel plots and common emitter characteristics are shown for the specific case of x=1, x=0.7, and x linearly graded from 0.75 to 0.7. Of the three designs, it is found that the linearly graded case has the lowest leakage current and the highest current gain. IV curves for all four possible classes of InAs/GaAs heterojunction (nN, nP, pN, pP) are calculated. A pN heterojunction is fabricated and characterized. In spite of the 7% lattice mismatch between InAs and GaAs, the diode has an ideality factor of 1.26 over three decades in the forward direction. In the reverse direction, the leakage current grows exponentially with the magnitude of the bias, and shows an effective ideality factor of 3.17, in stark disagreement with simulation. IV curves are taken over a temperature range of 105 K to 405 and activation energies are extracted. For benchmarking the device processing and the characterization apparatus, a conventional GaAs homojunction diode was fabricated and characterized, showing current rectification ratio of 109 between plus one volt and minus one volt. Because the PnP material for the optimal HBT design was not available, an Npn GaAs/InAs/InAs HBT structure was processed, characterized, and analyzed. The Npn device fails in both theory and in practice; however, by making a real structure, valuable lessons were learned for crystal growth, mask design, processing, and metal contacts.
Master of Science

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38

Lin, Yong. „Science and applications of III-V graded anion metamorphic buffers on INP substrates“. Columbus, Ohio : Ohio State University, 2007. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=osu1172852334.

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39

Bacher, Fred R. „A study of GaAs, InP and InGaAs grown by organometallic vapor phase epitaxy /“. Full text open access at:, 1987. http://content.ohsu.edu/u?/etd,139.

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40

凌志聰 und Chi-chung Francis Ling. „Positron annihilation spectroscopic studies of GAAS and INP related systems“. Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 1996. http://hub.hku.hk/bib/B31235062.

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41

Ling, Chi-chung Francis. „Positron annihilation spectroscopic studies of GAAS and INP related systems /“. Hong Kong : University of Hong Kong, 1996. http://sunzi.lib.hku.hk/hkuto/record.jsp?B17592513.

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42

Dean, Matthew Craig. „Single and entangled photon sources using self-assembled InAs quantum dots“. Thesis, University of Cambridge, 2014. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.648451.

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43

SRIVASTAVA, SHIVANI. „SIMULATION STUDY OF InP-BASED UNI-TRAVELING CARRIER PHOTODIODE“. University of Cincinnati / OhioLINK, 2003. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1068737126.

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44

Myers, Riggs Rhonda Renee. „Simulation and Design of InAs Nanowire Transistors Using Ballistic Transport“. University of Cincinnati / OhioLINK, 2005. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1192729325.

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45

Aurand, Alain. „Photoluminescence d'hétéostructures GaAs/Ga0. 51In0. 49P : étude des échanges arsenic/phosphore“. Clermont-Ferrand 2, 1999. http://www.theses.fr/1999CLF22101.

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CE MEMOIRE RAPPORTE UNE ETUDE EXPERIMENTALE ET THEORIQUE DES PROPRIETES OPTIQUES DE PUITS QUANTIQUES GaAs/Ga0. 51In0. 49P ELABORES SOUS JETS CHIMIQUES ET CONCERNE LES ECHANGES ARSENIC/PHOSPHORE SE PRODUISANT DURANT LA CROISSANCE. LES ETATS ELECTRONIQUES DES STRUCTURES ETUDIEES SONT ANALYSES A PARTIR D'EXPERIENCES DE PHOTOLUMINESCENCE EN FONCTION DE LA TEMPERATURE ET SOUS PRESSION HYDROSTATIQUE. TOUT D'ABORD, LES DIFFERENTS MOUVEMENTS D'ATOMES AFFECTANT LA STRUCTURE SONT PRESENTES : SEGREGATION D'INDIUM, ECHANGE ET INCORPORATION RESIDUELLE DES ELEMENTS V. CES PHENOMENES ABOUTISSENT A LA FORMATION DE MONOCOUCHES D'ALLIAGE (GA,IN)(AS,P), DONT LES PROPRIETES SONT MODELISEES AFIN D'EVALUER LE DECALAGE DE BANDE DE VALENCE ENTRE GAAS ET (GA,IN)(AS,P). LES ECHANGES ARSENIC/PHOSPHORE A LA PREMIERE INTERFACE DE PUITS GAAS/GAINP#2 SONT ENSUITE ETUDIES EN FONCTION DU TEMPS D'EXPOSITION DE LA SURFACE DE GAINP#2 A UN FLUX D'ARSENIC. DES EXPERIENCES DE PHOTOLUMINESCENCE EN FONCTION DE LA TEMPERATURE PERMETTENT DE DEDUIRE LES ENERGIES EXCITONIQUES ET DE S'AFFRANCHIR DU STOKES SHIFT ENTRE L'ENERGIE D'ABSORPTION ET L'ENERGIE D'EMISSION. LA QUANTITE D'ATOMES DE PHOSPHORES REMPLACES EST ESTIMEE EN AJUSTANT LES CALCULS THEORIQUES AUX RESULTATS EXPERIMENTAUX. IL APPARAIT QUE LA REACTION DE SUBSTITUTION AFFECTE SEULEMENT LES TROIS PREMIERES MONOCOUCHES DE LA SURFACE. LA DERNIERE PARTIE A TRAIT AUX ECHANGES PHOSPHORE/ARSENIC DUS A L'EXPOSITION DE LA SURFACE DE GAAS A UN FLUX DE PHOSPHORE. COMME PRECEDEMMENT, L'ENERGIE EXCITONIQUE DES PUITS EST DEDUITE D'EXPERIENCES DE LUMINESCENCE EN FONCTION DE LA TEMPERATURE. DES EXPERIENCES SOUS PRESSION HYDROSTATIQUE METTENT EN EVIDENCE LA FORMATION D'UNE ZONE RICHE EN GAP A LA SECONDE INTERFACE DES PUITS. L'AJUSTEMENT DES CALCULS AUX ENERGIES EXCITONIQUES EXPERIMENTALES MESUREES A LA PRESSION ATMOSPHERIQUE NE PEUT S'EFFECTUER SANS LA PRISE EN COMPTE D'UNE DIFFUSION DU PHOSPHORE DANS LE PUITS DE GAAS

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46

Boehme, Christopher M. „MBE growth of an Electronic-Photonic Integrated Circuit (EPIC) using the indium gallium aluminum arsenide/indium phosphide material system“. Ann Arbor, Mich. : ProQuest, 2007. http://gateway.proquest.com/openurl?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&res_dat=xri:pqdiss&rft_dat=xri:pqdiss:1447229.

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Thesis (M.S. in Electrical Engineering)--S.M.U., 2007.
Title from PDF title page (viewed Nov. 19, 2009). Source: Masters Abstracts International, Volume: 46-03, page: 1646. Adviser: Gary Evans. Includes bibliographical references.

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47

Demerdjiev, Penka. „Opto-electrical properties of indium gallium arsenic phosphide quaternary epilayers and multiple quantum wells lattice matched to indium phosphide“. Thesis, University of Ottawa (Canada), 1995. http://hdl.handle.net/10393/9722.

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$In\sb{1-{\rm x}}Ga\sb{\rm x}As\sb{\rm y}P\sb{1-{\rm y}}$ epilayers lattice matched to InP and $In\sb{1-{\rm x}}Ga\sb{\rm x}As\sb{\rm y}P\sb{1-{\rm y}}/InP$ Multiple Quantum Wells (MQWs) grown by Chemical-Beam Epitaxy (CBE) are being studied systematically using the Photovoltaic (PV) effect. At first, the Schottky barriers on the interfaces (metal-semiconductor, metal-insulator-semiconductor) are determined as an important factor for the electrical and optical properties of the samples. Samples with identical Schottky contact deposition but with an insulating layer on the front surface, have shown much smaller leakage current and yield enhanced barrier heights. The photovoltaic signal in the temperature interval 4-300K has maximum amplitude at about 150-180K for the MQW samples and at about 190K for the epilayer. An applied electric field changes the integrated intensity and spectrally shifts the allowed and forbidden transitions observed in bias dependent PV spectra of various InGaAsP/InP MQWs. The combined effect of two external factors, the thermal ionization and the electric field on the shape and magnitude of the 11H exciton peak, are discussed in terms of exciton binding energy and field ionization. The optically induced changes and energy shifting of the 11H/ exciton peak are observed, when excitation dependent double beam experiments are conducted on the $In\sb{0.72}Ga\sb{0.28}As\sb{0.68}P\sb{0.32}/InP$ MQWs. The photomodulation of the internal fields through carrier transport results in observing effective nonlinearities at milliwatt power levels. The experimentally measured transition energies for the MQWs show good agreement with the envelope wave function calculations. The observed Schottky barrier heights and band gap energies are consistent with the interpolation scheme estimations. (Abstract shortened by UMI.)

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48

Luo, Yilin, und 羅以琳. „High electric field current transport in semi-insulating GaAs and InP“. Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2000. http://hub.hku.hk/bib/B31242133.

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49

Wen, Yuan, und 文苑. „Theoretical and experimental studies of electronic states in InAs/GaAsself-assembled quantum dots“. Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2009. http://hub.hku.hk/bib/B43224003.

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50

Luo, Yilin. „High electric field current transport in semi-insulating GaAs and InP“. Hong Kong : University of Hong Kong, 2000. http://sunzi.lib.hku.hk/hkuto/record.jsp?

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